JP7170664B2 - 前面型撮像素子用基板および前記基板の製造方法 - Google Patents
前面型撮像素子用基板および前記基板の製造方法 Download PDFInfo
- Publication number
- JP7170664B2 JP7170664B2 JP2019557687A JP2019557687A JP7170664B2 JP 7170664 B2 JP7170664 B2 JP 7170664B2 JP 2019557687 A JP2019557687 A JP 2019557687A JP 2019557687 A JP2019557687 A JP 2019557687A JP 7170664 B2 JP7170664 B2 JP 7170664B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- silicon
- germanium
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 151
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 85
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 232
- 238000000407 epitaxy Methods 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Recrystallisation Techniques (AREA)
- Light Receiving Elements (AREA)
Description
- シリコンゲルマニウムのエピタキシャル成長に好適な半導体材料を含んでなるドナー基板を提供する工程;
- 支持基板を提供する工程;
- 支持基板上にドナー基板を結合させ、結合界面に電気絶縁層を位置させる工程;
- 支持基板上に半導体材料の層を転写させるために、ドナー基板を薄化させる工程;
- ゲルマニウム含量が10%未満、好ましくは8%以下であるシリコンゲルマニウム層の半導体材料の転写層上でのエピタキシャル成長を行う工程
を含んでなる。
- 一方では、近赤外の波長における最大の光子を取り込むのに十分大きな厚さと、
- 他方では、特に近赤外における活性層による光子の吸収能力を増加させるのに十分なゲルマニウム濃度と、
- シリコンゲルマニウムの緩和およびそれに起因する結晶欠陥(転位)の生成を避けるための限られた厚さ(濃度に依存)
との間の妥協の結果、決定される。
- 支持基板1との界面に位置する第1酸化シリコン層21と、
- 窒化チタン層22と、
- 活性層3との界面に位置する第2酸化シリコン層23
とを順次含んでなる。
- 厚さ400nmの第1酸化シリコン層21、
- 厚さ50nmの窒化チタン層22、および
- 厚さ20nmの第2酸化シリコン層23
の反射率を示している。
US 2016/0118431
WO 2005/043614
Claims (22)
- 半導体支持基板(1)と、電気絶縁層(2)と、半導体活性層(3)とを順次含んでなる前面型撮像素子用の基板であって、活性層(3)がシリコンゲルマニウムからなるエピタキシャル層であり、該活性層のゲルマニウム含量が10%未満であることを特徴とし、電気絶縁層が、誘電体層および/または金属層(21、22、23)の積層体から構成され、該積層体が、700nm~3μmの間に含まれる波長範囲にある該積層体の反射率が、該積層体の厚さと等しい厚さを有する酸化シリコン層の反射率を上回るように選択される、基板。
- 活性層(3)のゲルマニウム含量が8%以下である、請求項1に記載の基板。
- 活性層(3)の厚さが、これを超えるとシリコンゲルマニウムの緩和が生じる厚さと定義される、シリコンゲルマニウム層の臨界厚さ未満である、請求項1または2に記載の基板。
- 活性層の厚さが、1μm超、またはさらには2μm超である、請求項1~3のいずれか一項に記載の基板。
- 電気絶縁層(2)とシリコンゲルマニウム層(42)との間にシリコン層(42)をさらに含んでなる、請求項1~4のいずれか一項に記載の基板。
- 電気絶縁層(2)が酸化シリコンからなる、請求項1~5のいずれか一項に記載の基板。
- 電気絶縁層(2)の厚さが、10~200nmの間に含まれる、請求項1~6のいずれか一項に記載の基板。
- 電気絶縁層(2)が、支持基板(1)から活性層(3)にかけて、酸化シリコン層(21)と、窒化チタン層(22)と、酸化シリコン層(23)とを順次含んでなる、請求項1に記載の基板。
- 請求項1~8のいずれか一項に記載の基板と、該基板の活性層(3)中のフォトダイオードのマトリックスアレイとを含んでなることを特徴とする、前面型撮像素子。
- 以下の工程:
- シリコンゲルマニウムのエピタキシャル成長に好適な半導体材料を含んでなるドナー基板(30、40)を提供する工程;
- 支持基板(1)を提供する工程;
- 支持基板(1)上にドナー基板(30、40)を結合させ、結合界面に電気絶縁層(2)を位置させる工程;
- 支持基板(1)上に半導体材料の層(34、42)を転写させるために、ドナー基板(30、40)を薄化させる工程;
- シリコンゲルマニウム層(35、3)の半導体材料の転写層(34、42)上でのエピタキシャル成長を行い、前記シリコンゲルマニウム層のゲルマニウム含量を10%未満とする工程
を含んでなる、前面型撮像素子用基板を製造する方法であって、
電気絶縁層が、誘電体層および/または金属層(21、22、23)の積層体の支持基板(1)上への成膜により形成され、前記積層体が、700nm~3μmの間に含まれる波長範囲にある前記積層体の反射率が、前記積層体の厚さと等しい厚さを有する酸化シリコン層の反射率を上回るように選択される、方法。 - シリコンゲルマニウムのエピタキシャル成長に好適なドナー基板(30)の半導体材料が、シリコンゲルマニウムである、請求項10に記載の方法。
- 前記半導体材料(31)が、ベース基板(32)上にエピタクシーにより形成され、前記半導体材料およびベース基板が一緒になってドナー基板(30)を形成する、請求項11に記載の方法。
- シリコンゲルマニウムのエピタキシャル成長に好適なドナー基板(40)の半導体材料が、シリコンである、請求項10に記載の方法。
- 支持基板(1)上に転写されるシリコン層(42)の厚さが、400nm以下である、請求項13に記載の方法。
- シリコンゲルマニウムのエピタキシャル成長の最後に、シリコン層(42)が、電気絶縁層(2)とシリコンゲルマニウム層(3)との間に保護される、請求項13または14に記載の方法。
- シリコンゲルマニウムのエピタキシャル成長が行われているシリコン層(42)をシリコンゲルマニウム層へ変換させるために、活性層(3)のシリコンゲルマニウムを凝縮する工程をさらに含んでなる、請求項13または14に記載の方法。
- シリコンゲルマニウムのエピタキシャル成長に好適な半導体材料の層(34、42)の境界を定めるために、ドナー基板(30、40)における脆化域(33、41)を形成する工程を含んでなり、ドナー基板の薄化が、該脆化域(33、41)に沿った分離を含んでなる、請求項10~16のいずれか一項に記載の方法。
- 脆化域(33、41)の形成が、ドナー基板(30、40)における原子種の埋め込みを含んでなる、請求項17に記載の方法。
- 犠牲酸化物層(5)が、原子種の埋め込み前にドナー基板(40)上に形成され、原子種の埋め込みが、前記犠牲層(5)を介して実施され、前記犠牲酸化物層(5)が、支持基板(1)上でのドナー基板(30、40)の結合前に除去される、請求項18と組み合わせた請求項10に記載の方法。
- 活性層(3)の厚さが、1μm超、またはさらには2μm超である、請求項10~19のいずれか一項に記載の方法。
- 活性層(3)の厚さが、これを超えるとシリコンゲルマニウムの緩和が生じる厚さと定義される、シリコンゲルマニウム層の臨界厚さ未満である、請求項10~20のいずれか一項に記載の方法。
- 活性層(3)のゲルマニウム含量が8%以下である、請求項10~21のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1750237 | 2017-01-11 | ||
FR1750237A FR3061803B1 (fr) | 2017-01-11 | 2017-01-11 | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
PCT/FR2018/050053 WO2018130780A1 (fr) | 2017-01-11 | 2018-01-10 | Substrat pour capteur d'image de type face avant et procédé de fabrication d'un tel substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020504462A JP2020504462A (ja) | 2020-02-06 |
JP7170664B2 true JP7170664B2 (ja) | 2022-11-14 |
Family
ID=59070743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019557687A Active JP7170664B2 (ja) | 2017-01-11 | 2018-01-10 | 前面型撮像素子用基板および前記基板の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11127775B2 (ja) |
EP (1) | EP3568868B1 (ja) |
JP (1) | JP7170664B2 (ja) |
KR (1) | KR102572859B1 (ja) |
CN (1) | CN110168700B (ja) |
FR (1) | FR3061803B1 (ja) |
TW (1) | TWI761422B (ja) |
WO (1) | WO2018130780A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110223995B (zh) * | 2019-06-14 | 2021-11-02 | 芯盟科技有限公司 | 一种图像传感器的形成方法、图像传感器及电子设备 |
CN110797305A (zh) * | 2019-10-22 | 2020-02-14 | 广东美的白色家电技术创新中心有限公司 | 一种半导体器件及其制备方法、电器设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001036054A (ja) | 1999-07-19 | 2001-02-09 | Mitsubishi Electric Corp | Soi基板の製造方法 |
JP2001345436A (ja) | 2000-05-30 | 2001-12-14 | Sharp Corp | 回路内蔵受光素子 |
JP2007511068A (ja) | 2003-11-03 | 2007-04-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 絶縁体上SiGe(SGOI)基板及び絶縁体上Ge(GOI)基板の製造方法、半導体ウェハ、並びに半導体構造 |
JP2008305994A (ja) | 2007-06-07 | 2008-12-18 | Panasonic Corp | 固体撮像装置およびその製造方法 |
JP2010040931A (ja) | 2008-08-07 | 2010-02-18 | Sumco Corp | 半導体基板の製造方法及び半導体基板 |
JP2013030773A (ja) | 2011-07-28 | 2013-02-07 | Soytec | 単結晶の半導体層を支持基板上に転写する方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2789517B1 (fr) | 1999-02-10 | 2001-03-09 | Commissariat Energie Atomique | Procede de formation sur un support d'une couche de silicium a usage optique et mise en oeuvre du procede pour la realisation de composants optiques |
US6524935B1 (en) * | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
US6515335B1 (en) * | 2002-01-04 | 2003-02-04 | International Business Machines Corporation | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same |
US7026249B2 (en) * | 2003-05-30 | 2006-04-11 | International Business Machines Corporation | SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth |
US7550370B2 (en) * | 2004-01-16 | 2009-06-23 | International Business Machines Corporation | Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density |
US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
CN102947953A (zh) * | 2010-03-24 | 2013-02-27 | 西奥尼克斯公司 | 具有增强的电磁辐射探测的器件和相关方法 |
CN104201108B (zh) * | 2014-08-27 | 2017-11-07 | 上海集成电路研发中心有限公司 | SiGe源/漏区的制造方法 |
FR3027731B1 (fr) | 2014-10-24 | 2018-01-05 | Stmicroelectronics Sa | Capteur d'image face avant a courant d'obscurite reduit sur substrat soi |
US10515991B2 (en) * | 2015-04-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US10707260B2 (en) * | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
US11848227B2 (en) * | 2016-03-07 | 2023-12-19 | Globalwafers Co., Ltd. | Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment |
-
2017
- 2017-01-11 FR FR1750237A patent/FR3061803B1/fr active Active
-
2018
- 2018-01-10 US US16/477,374 patent/US11127775B2/en active Active
- 2018-01-10 EP EP18702752.9A patent/EP3568868B1/fr active Active
- 2018-01-10 CN CN201880006335.0A patent/CN110168700B/zh active Active
- 2018-01-10 JP JP2019557687A patent/JP7170664B2/ja active Active
- 2018-01-10 WO PCT/FR2018/050053 patent/WO2018130780A1/fr unknown
- 2018-01-10 KR KR1020197023394A patent/KR102572859B1/ko active IP Right Grant
- 2018-01-11 TW TW107101072A patent/TWI761422B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001036054A (ja) | 1999-07-19 | 2001-02-09 | Mitsubishi Electric Corp | Soi基板の製造方法 |
JP2001345436A (ja) | 2000-05-30 | 2001-12-14 | Sharp Corp | 回路内蔵受光素子 |
JP2007511068A (ja) | 2003-11-03 | 2007-04-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 絶縁体上SiGe(SGOI)基板及び絶縁体上Ge(GOI)基板の製造方法、半導体ウェハ、並びに半導体構造 |
JP2008305994A (ja) | 2007-06-07 | 2008-12-18 | Panasonic Corp | 固体撮像装置およびその製造方法 |
JP2010040931A (ja) | 2008-08-07 | 2010-02-18 | Sumco Corp | 半導体基板の製造方法及び半導体基板 |
JP2013030773A (ja) | 2011-07-28 | 2013-02-07 | Soytec | 単結晶の半導体層を支持基板上に転写する方法 |
Also Published As
Publication number | Publication date |
---|---|
FR3061803A1 (fr) | 2018-07-13 |
TW201832354A (zh) | 2018-09-01 |
FR3061803B1 (fr) | 2019-08-16 |
WO2018130780A1 (fr) | 2018-07-19 |
EP3568868B1 (fr) | 2023-06-21 |
JP2020504462A (ja) | 2020-02-06 |
US11127775B2 (en) | 2021-09-21 |
US20190348462A1 (en) | 2019-11-14 |
EP3568868A1 (fr) | 2019-11-20 |
KR20190100405A (ko) | 2019-08-28 |
CN110168700B (zh) | 2023-06-27 |
KR102572859B1 (ko) | 2023-08-30 |
CN110168700A (zh) | 2019-08-23 |
TWI761422B (zh) | 2022-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20220157882A1 (en) | Substrate for a front-side-type image sensor and method for producing such a substrate | |
JP7170664B2 (ja) | 前面型撮像素子用基板および前記基板の製造方法 | |
US8524522B2 (en) | Microelectronic device, in particular back side illuminated image sensor, and production process | |
US20210366763A1 (en) | Semiconductor on insulator structure for a front side type imager | |
US10903263B2 (en) | Front-side type image sensor and method for manufacturing such a sensor | |
JP7467805B2 (ja) | 前面撮像素子及びそのような撮像素子を製造するための方法 | |
US20090065819A1 (en) | Apparatus and method of manufacture for an imager starting material | |
IL284308B1 (en) | Process for manufacturing a substrate for a front image sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220506 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220704 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221007 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7170664 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |