JP7052322B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP7052322B2 JP7052322B2 JP2017228293A JP2017228293A JP7052322B2 JP 7052322 B2 JP7052322 B2 JP 7052322B2 JP 2017228293 A JP2017228293 A JP 2017228293A JP 2017228293 A JP2017228293 A JP 2017228293A JP 7052322 B2 JP7052322 B2 JP 7052322B2
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Description
図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す断面図である。実施の形態1では、炭化珪素半導体装置が、MOSFETの場合を示す。図1に示すように、実施の形態1にかかる炭化珪素半導体装置は、n+型炭化珪素半導体基板(第1導電型の半導体基板)1の第1主面(おもて面)、例えば(0001)面(Si面)、にn型境界層2、n-型ドリフト層(第1導電型の第1半導体層)3が堆積されている。
次に、実施の形態1にかかる炭化珪素半導体装置の製造方法について説明する。図5は、実施の形態1にかかる炭化珪素半導体装置の製造の一部を示すフローチャートである。図6~図8は、実施の形態1にかかる炭化珪素半導体装置の製造途中の状態を模式的に示す断面図である。図5では、本発明のプロトン照射に関する工程を詳しく記載している。
図9は、実施の形態2にかかる炭化珪素半導体装置の構造を示す断面図である。実施の形態2にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なる点は、n-型ドリフト層3にもプロトンが注入されていることである。
実施の形態2にかかる炭化珪素半導体装置は、実施の形態1にかかる炭化珪素半導体装置の製造方法において、炭化珪素半導体基体の第1主面側(p+型ベース領域4側)からn+型炭化珪素半導体基板1とn型境界層2との界面近傍にプロトンを照射する前、または、照射後、n-型ドリフト層3にもプロトンを照射することで製造される。
実施の形態3にかかる炭化珪素半導体装置の構造は、実施の形態1にかかる炭化珪素半導体装置の構造と同様であるために記載は省略する。実施の形態3にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なる点は、裏面からプロトンが注入されていることである。
図14は、実施の形態3にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。実施の形態3にかかる炭化珪素半導体装置は、実施の形態1にかかる炭化珪素半導体装置の製造方法において、n+型炭化珪素半導体基板1とn型境界層2との界面近傍にプロトンを照射する際に、図14の矢印Cのようにn+型炭化珪素半導体基板1の第2主面(裏面、すなわち炭化珪素半導体基体の裏面)から、プロトンを照射することで製造される。
図17は、実施の形態4にかかる炭化珪素半導体装置の構造を示す断面図である。実施の形態4にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なる点は、プロトンの代わりにヘリウム(He)が注入されていることである。
実施の形態4にかかる炭化珪素半導体装置は、実施の形態4にかかる炭化珪素半導体装置の製造方法において、炭化珪素半導体基体の第1主面側(p+型ベース領域4側)からn+型炭化珪素半導体基板1とn型境界層2との界面近傍にプロトンを照射する代わりに、ヘリウムを照射することで製造される。ヘリウムは、例えば、3.5MeVの加速電圧で照射する。
図20は、実施の形態5にかかる炭化珪素半導体装置の構造を示す断面図である。実施の形態5では、炭化珪素半導体装置が、IGBTの場合を示す。図20に示すように、p型炭化珪素半導体基板16が設けられ、p+型ベース領域4の内部には、基体第1主面側にn+型エミッタ領域17が選択的に設けられている。
実施の形態5にかかる炭化珪素半導体装置は、実施の形態1にかかる炭化珪素半導体装置の製造方法において、n+型炭化珪素半導体基板1とn型境界層2との界面近傍にプロトンを照射する前、または、照射した後に、n-型ドリフト層3とp+型ベース領域4との界面近傍にプロトンを照射することで製造される。
図24は、実施の形態6にかかる炭化珪素半導体装置の構造を示す断面図である。実施の形態6にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なる点は、ゲート絶縁膜5にもプロトンが注入されていることである。
実施の形態6にかかる炭化珪素半導体装置は、実施の形態1にかかる炭化珪素半導体装置の製造方法において、炭化珪素半導体基体の第1主面側(p+型ベース領域4側)からn+型炭化珪素半導体基板1とn型境界層2との界面近傍にプロトンを照射する前、または、照射後、ゲート絶縁膜5にもプロトンを照射することで製造される。
図27は、実施例の炭化珪素半導体装置のプロトン濃度を示すグラフである。また、図28は、実施例の炭化珪素半導体装置のホール密度を示すグラフである。また、図29は、従来例の炭化珪素半導体装置のホール密度を示すグラフである。図27において、縦軸はプロトン濃度を示し、単位は/cm3である。また、横軸はn-型ドリフト層3の表面からの深さを示し、単位はμmである。図28、図29において、縦軸はホール密度を示し、単位は/cm3である。また、横軸はn-型ドリフト層3の表面からの深さを示し、単位はμmである。
2 n型境界層
3、103 n-型ドリフト層
4、104 p+型ベース領域
5、105 ゲート絶縁膜
6、106 ゲート電極
7、107 p+型コンタクト領域
8、108 n+型ソース領域
9、109 層間絶縁膜
10、110 ソース電極
15、115 トレンチ
16 p型炭化珪素半導体基板
17 n+型エミッタ領域
18 エミッタ電極
102 高濃度n型エピタキシャル層
111 基底面転位
112 積層欠陥
113 三角積層欠陥
114 帯状積層欠陥
Claims (7)
- 第1導電型の半導体基板と、
前記半導体基板上に設けられた、前記半導体基板よりも低不純物濃度の第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2半導体層の、前記第1半導体層に対して反対側の表面層に選択的に設けられた、前記半導体基板より高不純物濃度の第1導電型の第1半導体領域と、
前記第1半導体領域と前記第1半導体層とに挟まれた前記第2半導体層の表面上の少なくとも一部にゲート絶縁膜を介して設けられたゲート電極と、
前記第1半導体領域と前記第2半導体層の表面に設けられた第1電極と、
を備え、
前記半導体基板の、前記第1半導体層側の表面から2μm以上の第1領域、および、前記第1半導体層の、前記半導体基板側の表面から3μm以上の第2領域に、1×1013/cm3以上1×1015/cm3以下の濃度のプロトンが注入されていることを特徴とする炭化珪素半導体装置。 - 前記第1半導体層の、前記第2領域以外の領域に、1×1013/cm3未満の濃度のプロトンが注入されていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記ゲート絶縁膜に、プロトンが注入されていることを特徴とする請求項1または2に記載の炭化珪素半導体装置。
- 前記プロトンの代わりにヘリウムが注入されていることを特徴とする請求項1~3のいずれか一つに記載の炭化珪素半導体装置。
- 第1導電型の半導体基板上に、前記半導体基板よりも低不純物濃度の第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の、前記半導体基板側に対して反対側に第2導電型の第2半導体層を形成する第2工程と、
前記第2半導体層の、前記第1半導体層に対して反対側の表面層に選択的に、前記半導体基板より高不純物濃度の第1導電型の第1半導体領域を形成する第3工程と、
前記第1半導体領域と前記第1半導体層とに挟まれた前記第2半導体層の表面上の少なくとも一部にゲート絶縁膜を介してゲート電極を形成する第4工程と、
前記半導体基板の、前記第1半導体層側の表面から2μm以上の第1領域、および、前記第1半導体層の、前記半導体基板側の表面から3μm以上の第2領域に、プロトンを照射し、プロトンの濃度を1×10 13 /cm 3 以上1×10 15 /cm 3 以下とする第5工程と、
前記第1半導体領域と前記第2半導体層の表面に第1電極を形成する第6工程と、
を含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記第5工程では、前記半導体基板の前記第1電極側からプロトンを照射し、
前記第6工程の後、420℃以下で熱処理する第7工程を含むことを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。 - 前記第5工程では、前記半導体基板の前記第1電極と反対側からプロトンを照射し、
前記第6工程の後、420℃以下で熱処理する第7工程を含むことを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。
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