JP7048596B2 - 高圧アニーリング及び湿式エッチング速度の低下 - Google Patents
高圧アニーリング及び湿式エッチング速度の低下 Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
本出願は、「高圧アニーリング及び湿式エッチング速度の低下」と題する2016年11月1日出願の米国仮特許出願第62/415,757号、及び「高圧アニーリング及び湿式エッチング速度の低減」と題する2016年11月23日出願の米国非仮出願第15/360,016号の利益を主張する。第62/415,757及び第15/360,016の開示は、あらゆる目的のためにその全体を参照することによって本明細書に組み込まれる。
Claims (15)
- パターン形成された基板の上で間隙充填誘電体を処理する方法であって、
前記パターン形成された基板の上の間隙に、ポアを含むがそれ以外は前記パターン形成された基板の上の前記間隙を充填する間隙充填誘電体を形成することと、
前記パターン形成された基板を基板処理チャンバの基板処理領域内に配置することと、
湿式エッチング速度が熱酸化ケイ素の湿式エッチング速度の2倍以下である高密度化された間隙充填誘電体を形成するために、前記間隙充填誘電体を145psiから864psiの分圧で、前記基板の温度が300℃から700℃の間で、気相H2Oに曝露することによって、前記間隙充填誘電体を高密度化することと、
を含む方法。 - 前記間隙充填誘電体が、ケイ素及び水素を含む、請求項1に記載の方法。
- 前記間隙充填誘電体を高密度化する前に、前記間隙充填誘電体をUV光に曝露することを更に含む、請求項1に記載の方法。
- 前記間隙充填誘電体をHF又は緩衝酸化物エッチング溶液でエッチングすることを更に含む、請求項1に記載の方法。
- 前記基板処理領域内の露出面の最低温度が180℃を上回る、請求項1に記載の方法。
- 前記間隙充填誘電体を高密度化した後に、前記パターン形成された基板を前記基板処理領域から取り外すことを更に含む、請求項1に記載の方法。
- 前記間隙充填誘電体を形成することが、前記間隙充填誘電体が前記パターン形成された基板の上の他の場所に最初に堆積された後に、前記間隙に材料を流入させることを含む、請求項1に記載の方法。
- 前記間隙充填誘電体を形成することが、液相前駆体から前記パターン形成された基板の上に材料を流動させることを含む、請求項1に記載の方法。
- 前記間隙充填誘電体が、前記間隙充填誘電体を形成した後に、ケイ素、炭素、窒素、水素及び酸素以外の元素を包含しない、請求項1に記載の方法。
- 前記基板処理領域内での電子温度は、0.5eV未満である、請求項1に記載の方法。
- パターン形成された基板のトレンチを充填する方法であって、
前記パターン形成された基板の上に誘電体膜を形成することであって、誘電体材料を、前記パターン形成された基板の上の他の場所に最初に堆積した後に、前記トレンチに流入させることを含む、誘電体膜を形成することと、
前記パターン形成された基板を基板処理チャンバの基板処理領域内に配置することと、
湿式エッチング速度が熱酸化ケイ素の湿式エッチング速度の2倍以下である高密度化された間隙充填誘電体を形成するために、145psiから864psiのH2O分圧で、前記基板の温度が300℃から700℃の間で、前記誘電体材料を気相H2O曝露することによって、前記トレンチの中の前記誘電体材料を高密度化することと、
を含む方法。 - 前記基板処理領域内で露出される最も冷たい表面の温度が180℃から275℃の間である、請求項11に記載の方法。
- プロセス圧力(psiでの)が(14.7/760)*10(a-b/(T+c))未満であり、ここでa=7.96681、b=1668.21、c=228であり、かつTは前記基板処理領域内の任意の露出面の最低温度であり、Tが100°Cから374°Cの間である、請求項11に記載の方法。
- 前記誘電体材料を高密度化している間、前記基板処理領域内に結露が形成されない、請求項11に記載の方法。
- 前記基板処理領域内での電子温度は、0.5eV未満である、請求項11に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201662415757P | 2016-11-01 | 2016-11-01 | |
US62/415,757 | 2016-11-01 | ||
US15/360,016 US10062561B2 (en) | 2016-11-01 | 2016-11-23 | High-pressure annealing and reducing wet etch rates |
US15/360,016 | 2016-11-23 | ||
PCT/US2017/057911 WO2018085072A1 (en) | 2016-11-01 | 2017-10-23 | High-pressure annealing and reducing wet etch rates |
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JP2019534566A JP2019534566A (ja) | 2019-11-28 |
JP7048596B2 true JP7048596B2 (ja) | 2022-04-05 |
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US11037781B2 (en) * | 2018-06-29 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and method for high pressure anneal |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001189275A (ja) | 1999-12-27 | 2001-07-10 | Sony Corp | 半導体膜形成方法及び薄膜半導体装置の製造方法 |
JP2003068757A (ja) | 2001-08-30 | 2003-03-07 | Sony Corp | アクティブマトリクス基板及びその製造方法 |
JP2005229028A (ja) | 2004-02-16 | 2005-08-25 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体装置の製造方法 |
JP2009117404A (ja) | 2007-11-01 | 2009-05-28 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板及びその製造方法 |
JP2012204777A (ja) | 2011-03-28 | 2012-10-22 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2013065885A (ja) | 2007-10-22 | 2013-04-11 | Applied Materials Inc | トレンチ内に誘電層を形成する方法 |
WO2013065771A1 (ja) | 2011-11-01 | 2013-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、半導体装置の製造装置及び記録媒体 |
JP2015115369A (ja) | 2013-12-09 | 2015-06-22 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE418158T1 (de) * | 1999-08-17 | 2009-01-15 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung |
US20070212850A1 (en) * | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
US7867923B2 (en) * | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
JP4823248B2 (ja) * | 2008-02-15 | 2011-11-24 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US8329587B2 (en) * | 2009-10-05 | 2012-12-11 | Applied Materials, Inc. | Post-planarization densification |
US8476142B2 (en) * | 2010-04-12 | 2013-07-02 | Applied Materials, Inc. | Preferential dielectric gapfill |
US8846536B2 (en) | 2012-03-05 | 2014-09-30 | Novellus Systems, Inc. | Flowable oxide film with tunable wet etch rate |
US8871656B2 (en) * | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9343293B2 (en) | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
US20140329027A1 (en) | 2013-05-02 | 2014-11-06 | Applied Materials, Inc. | Low temperature flowable curing for stress accommodation |
US9847222B2 (en) | 2013-10-25 | 2017-12-19 | Lam Research Corporation | Treatment for flowable dielectric deposition on substrate surfaces |
US20150118863A1 (en) | 2013-10-25 | 2015-04-30 | Lam Research Corporation | Methods and apparatus for forming flowable dielectric films having low porosity |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US10049921B2 (en) | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
-
2016
- 2016-11-23 US US15/360,016 patent/US10062561B2/en active Active
-
2017
- 2017-10-23 CN CN201780066416.5A patent/CN109923660B/zh active Active
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001189275A (ja) | 1999-12-27 | 2001-07-10 | Sony Corp | 半導体膜形成方法及び薄膜半導体装置の製造方法 |
JP2003068757A (ja) | 2001-08-30 | 2003-03-07 | Sony Corp | アクティブマトリクス基板及びその製造方法 |
JP2005229028A (ja) | 2004-02-16 | 2005-08-25 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体装置の製造方法 |
JP2013065885A (ja) | 2007-10-22 | 2013-04-11 | Applied Materials Inc | トレンチ内に誘電層を形成する方法 |
JP2009117404A (ja) | 2007-11-01 | 2009-05-28 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板及びその製造方法 |
JP2012204777A (ja) | 2011-03-28 | 2012-10-22 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
WO2013065771A1 (ja) | 2011-11-01 | 2013-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、半導体装置の製造装置及び記録媒体 |
JP2015115369A (ja) | 2013-12-09 | 2015-06-22 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 |
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US10062561B2 (en) | 2018-08-28 |
JP2019534566A (ja) | 2019-11-28 |
TW201829821A (zh) | 2018-08-16 |
CN109923660B (zh) | 2023-05-05 |
US20180122630A1 (en) | 2018-05-03 |
TWI743242B (zh) | 2021-10-21 |
CN109923660A (zh) | 2019-06-21 |
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