JP6893549B2 - 高次元変数選択モデルを使用した重要なパラメータの決定システム - Google Patents
高次元変数選択モデルを使用した重要なパラメータの決定システム Download PDFInfo
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- 230000000694 effects Effects 0.000 claims description 6
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- 230000003287 optical effect Effects 0.000 claims description 2
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- 238000000034 method Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 238000012356 Product development Methods 0.000 description 3
- 238000003070 Statistical process control Methods 0.000 description 3
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- 230000002596 correlated effect Effects 0.000 description 3
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- 238000005498 polishing Methods 0.000 description 3
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- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000013179 statistical model Methods 0.000 description 1
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Description
本出願は、2014年12月3日に出願され、米国特許出願第62/087,187号を付与された仮特許出願、および2015年6月22日に出願され、米国特許出願第62/183,101号を付与された仮特許出願の優先権を主張し、これらの特許出願の開示を本願に引用して援用する。
(min(Y−BX))2+λ(||X||+||X||2) (式1)
min(Y−ΣBiXi)2 (式2)
Xi=ΓZ+λi(||Γ||+||Γ||2) (式3)
Claims (12)
- 半導体製造ツールから複数のセンサデータおよびパラメトリックツール測定値を受け取るように構成された入力ユニットと、
前記複数のセンサデータおよびパラメトリックツール測定値から重要なパラメータのリストを決定するように構成された、前記入力ユニットと電気的に通信する高次元の変数選択ユニットと、
前記重要なパラメータを通信するように構成された、前記高次元の変数選択ユニットと電気的に通信する出力ユニットと、
を備え、
前記高次元の変数選択ユニットが、高次元変数選択モデルを用いて、前記複数のセンサデータおよびパラメトリックツール測定値を回帰分析するように構成され、
前記重要なパラメータは、オペレータまたは前記高次元の変数選択ユニットにより用途に応じて設定されたしきい値を超える効果を有するパラメータである
システム。 - 請求項1に記載のシステムであって、
前記半導体製造ツールが半導体検査ツールであるシステム。 - 請求項1に記載のシステムであって、
前記半導体製造ツールが、ステージ、光源、画像プロセッサ、および前記入力ユニットに接続された光学部品を備えるシステム。 - 請求項1に記載のシステムであって、
前記出力ユニットに接続され、前記重要なパラメータを表示するように構成されたディスプレイをさらに備えるシステム。 - 請求項1に記載のシステムであって、
前記高次元変数選択モデルが、式(min(Y−BX))2+λ(||X||+||X||2)を含み、ただし、Yは、前記半導体製造ツールの性能測定値であり、Xは、入力パラメータのベクトルであり、Bは、推定すべき係数のベクトルであり、λは、パラメータ係数がペナルティを科せられる程度を制御するシステム。 - 請求項1に記載のシステムであって、
前記高次元の変数選択ユニットが、前記高次元変数選択モデルを階層的に再パラメータ化するようにさらに構成されたシステム。 - 請求項1に記載のシステムであって、
前記出力ユニットが、前記半導体製造ツールに関する前記重要なパラメータの少なくとも1つに対する設定を変更し、前記半導体製造ツールを正常な状態に戻すようにさらに構成されたシステム。 - 請求項7に記載のシステムであって、
前記半導体製造ツールが、半導体検査ツールであるシステム。 - 請求項1に記載のシステムであって、
前記出力ユニットが、前記半導体製造ツールに関する前記重要なパラメータの少なくとも1つに対する設定を変更し、前記半導体製造ツールの結果を別の半導体製造ツールの結果と整合させるシステム。 - 請求項9に記載のシステムであって、
前記半導体製造ツールが、半導体検査ツールであるシステム。 - 請求項1に記載のシステムであって、
前記出力ユニットが、前記重要なパラメータのリストに基づいて前記半導体製造ツールについての仕様書を策定するようにさらに構成されたシステム。 - 請求項11に記載のシステムであって、
前記半導体製造ツールが、半導体検査ツールであるシステム。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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US201462087187P | 2014-12-03 | 2014-12-03 | |
US62/087,187 | 2014-12-03 | ||
US201562183101P | 2015-06-22 | 2015-06-22 | |
US62/183,101 | 2015-06-22 | ||
US14/955,752 US10361105B2 (en) | 2014-12-03 | 2015-12-01 | Determining critical parameters using a high-dimensional variable selection model |
US14/955,752 | 2015-12-01 | ||
JP2017529680A JP6641372B2 (ja) | 2014-12-03 | 2015-12-02 | 高次元変数選択モデルを使用した重要なパラメータの決定 |
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CN109901058B (zh) * | 2019-03-29 | 2021-04-02 | 上海华力集成电路制造有限公司 | 一种半导体器件的分析方法 |
JP2020181959A (ja) | 2019-04-26 | 2020-11-05 | 東京エレクトロン株式会社 | 学習方法、管理装置および管理プログラム |
CN110377941B (zh) * | 2019-06-10 | 2020-04-24 | 中国人民解放军军事科学院国防科技创新研究院 | 建立卫星温度场的罚盲似然克里金代理模型的方法 |
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JPH06168863A (ja) | 1991-03-01 | 1994-06-14 | Texas Instr Inc <Ti> | 半導体製造装置の監視および制御を実行する装置と方法 |
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