JP6866952B1 - 窒化物半導体ウェーハおよび窒化物半導体ウェーハの製造方法 - Google Patents
窒化物半導体ウェーハおよび窒化物半導体ウェーハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims abstract description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- 239000013078 crystal Substances 0.000 claims abstract description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- 239000001301 oxygen Substances 0.000 claims abstract description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 44
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Abstract
Description
CZ法により製造された、直径150mm、軸方位<111>のシリコン単結晶基板であって、抵抗率が1000Ω・cm以上、酸素濃度が5.0×1016〜2.0×1017atoms/cm3(JEIDA)の、窒素をドーピングした高抵抗低酸素CZシリコン基板を3枚準備した。ドーピングした窒素の濃度は、1.0×1015atoms/cm3であった。MOVPE炉を用いて、準備した高抵抗低酸素CZシリコン基板上に窒化物半導体のエピタキシャル成長を行った。成長温度は1200℃とし、総膜厚2.8μmのエピタキシャル層を成長した。
窒素をドーピングしていないことを除けば実施例と同じ高抵抗低酸素CZシリコン基板を3枚準備し、実施例と同様に窒化物半導体のエピタキシャル成長を行った。
12…シリコン単結晶基板、
14…中間層、
16…デバイス層(窒化物半導体薄膜)、
17…GaN層、
18…AlGaN層(電子供給層)。
Claims (4)
- シリコン単結晶基板の上に窒化物半導体からなるデバイス層を有する窒化物半導体ウェーハであって、
前記シリコン単結晶基板は、CZシリコン単結晶基板であり、抵抗率が1000Ω・cm以上であり、酸素濃度が5.0×1016atoms/cm3(JEIDA)以上、2.0×1017atoms/cm3(JEIDA)以下であり、窒素濃度が5.0×1014atoms/cm3以上であることを特徴とする窒化物半導体ウェーハ。 - 前記シリコン単結晶基板上に窒化物半導体又は金属からなる中間層を有し、該中間層の上に前記窒化物半導体からなるデバイス層を有することを特徴とする請求項1に記載の窒化物半導体ウェーハ。
- シリコン単結晶基板の上に窒化物半導体薄膜をエピタキシャル成長させる窒化物半導体ウェーハの製造方法であって、
前記シリコン単結晶基板として、CZ法により製造されたシリコン単結晶基板であり、抵抗率が1000Ω・cm以上であり、酸素濃度が5.0×1016atoms/cm3(JEIDA)以上、2.0×1017atoms/cm3(JEIDA)以下であり、窒素濃度が5.0×1014atoms/cm3以上のシリコン単結晶基板を用い、該シリコン単結晶基板の上に窒化物半導体薄膜をエピタキシャル成長させることを特徴とする窒化物半導体ウェーハの製造方法。 - 前記シリコン単結晶基板上に窒化物半導体又は金属からなる中間層を形成し、該中間層の上に前記窒化物半導体薄膜を成長させることを特徴とする請求項3に記載の窒化物半導体ウェーハの製造方法。
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JP2020128377A JP6866952B1 (ja) | 2020-07-29 | 2020-07-29 | 窒化物半導体ウェーハおよび窒化物半導体ウェーハの製造方法 |
US18/013,618 US20230290835A1 (en) | 2020-07-29 | 2021-07-12 | Nitride semiconductor wafer and method for producing nitride semiconductor wafer |
PCT/JP2021/026066 WO2022024729A1 (ja) | 2020-07-29 | 2021-07-12 | 窒化物半導体ウェーハおよび窒化物半導体ウェーハの製造方法 |
EP21850368.8A EP4191639A1 (en) | 2020-07-29 | 2021-07-12 | Nitride semiconductor wafer and method for producing nitride semiconductor wafer |
CN202180045965.0A CN115997271A (zh) | 2020-07-29 | 2021-07-12 | 氮化物半导体晶圆及氮化物半导体晶圆的制造方法 |
TW110126343A TW202206656A (zh) | 2020-07-29 | 2021-07-19 | 氮化物半導體晶圓及氮化物半導體晶圓的製造方法 |
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Citations (4)
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JP2011103380A (ja) * | 2009-11-11 | 2011-05-26 | Covalent Materials Corp | 化合物半導体基板 |
JP2012079952A (ja) * | 2010-09-08 | 2012-04-19 | Covalent Materials Corp | 窒化ガリウム系化合物半導体基板とその製造方法 |
JP2014094851A (ja) * | 2012-11-08 | 2014-05-22 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法、シリコン単結晶ウェーハの製造方法、及びシリコン単結晶ウェーハ |
JP2020098839A (ja) * | 2018-12-17 | 2020-06-25 | 信越半導体株式会社 | 窒化物半導体ウェーハの製造方法および窒化物半導体ウェーハ |
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JP2011103380A (ja) * | 2009-11-11 | 2011-05-26 | Covalent Materials Corp | 化合物半導体基板 |
JP2012079952A (ja) * | 2010-09-08 | 2012-04-19 | Covalent Materials Corp | 窒化ガリウム系化合物半導体基板とその製造方法 |
JP2014094851A (ja) * | 2012-11-08 | 2014-05-22 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法、シリコン単結晶ウェーハの製造方法、及びシリコン単結晶ウェーハ |
JP2020098839A (ja) * | 2018-12-17 | 2020-06-25 | 信越半導体株式会社 | 窒化物半導体ウェーハの製造方法および窒化物半導体ウェーハ |
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WO2023100540A1 (ja) | 2021-11-30 | 2023-06-08 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JP2023080538A (ja) * | 2021-11-30 | 2023-06-09 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JP7487726B2 (ja) | 2021-11-30 | 2024-05-21 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
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TW202206656A (zh) | 2022-02-16 |
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