JP6625926B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP6625926B2 JP6625926B2 JP2016080348A JP2016080348A JP6625926B2 JP 6625926 B2 JP6625926 B2 JP 6625926B2 JP 2016080348 A JP2016080348 A JP 2016080348A JP 2016080348 A JP2016080348 A JP 2016080348A JP 6625926 B2 JP6625926 B2 JP 6625926B2
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- Prior art keywords
- wafer
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- 238000003672 processing method Methods 0.000 title claims description 17
- 235000012431 wafers Nutrition 0.000 claims description 83
- 238000003384 imaging method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 230000010287 polarization Effects 0.000 claims description 7
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000002390 adhesive tape Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000002679 ablation Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000003702 image correction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
波長 :1030nm
平均出力 :3W
繰り返し周波数 :50kHz
パルス幅 :10ps
スポット径 :φ1μm
集光レンズの開口数/ウエーハの屈折率 :0.05〜0.20
X方向加工送り速度 :500mm/秒
シールドトンネル寸法 :φ1μmの細孔、φ10μmの非晶質
波長 :1340nm
平均出力 :1W
繰り返し周波数 :50kHz
パルス幅 :1ns
スポット径 :φ1μm
開口数 :0.8
X方向加工送り速度 :100mm/秒
12:SAWデバイス
14:分割予定ライン
40:レーザー加工装置
41:基台
42:保持機構
43:移動手段
44:レーザー光線照射手段
44a:集光器
45:枠体
50:撮像手段
52:表示装置
54:撮像素子
56:結像レンズ
58:偏光板
58´:偏光ビームスプリッター
70:分割装置
Claims (4)
- 分割予定ラインによって区画され複数のデバイスが複屈折性を有する結晶構造からなる基板の表面に形成されたウエーハを個々のデバイスに分割するウエーハの加工方法であって、
該ウエーハの裏面から撮像手段によって表面に形成された分割予定ラインを検出する検出工程と、
該検出された分割予定ラインに対応する裏面からレーザー光線を照射して分割の起点を形成する分割起点形成工程と、
該ウエーハに外力を付与して個々のデバイスに分割する分割工程と、を含み、
該検出工程において、該撮像手段に備えられた撮像素子と結像レンズとを結ぶ光軸上に配設された偏光子が該基板内で複屈折して現れる異常光を遮断すると共に、通常光を該撮像素子に導くウエーハの加工方法。 - 該偏光子は、偏向板、又は偏光ビームスプリッターを含む請求項1に記載のウエーハの加工方法。
- 該基板は、リチウムナイオベート(LiNbO3)であり、該デバイスは、SAWデバイスである請求項1、又は2に記載のウエーハの加工方法。
- 該ウエーハに形成された結晶方位を示すオリエンテーションフラットに対して偏光面が直交する直線偏光が通常光である請求項3に記載のウエーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016080348A JP6625926B2 (ja) | 2016-04-13 | 2016-04-13 | ウエーハの加工方法 |
TW106107995A TWI712079B (zh) | 2016-04-13 | 2017-03-10 | 晶圓之加工方法 |
KR1020170043629A KR102232092B1 (ko) | 2016-04-13 | 2017-04-04 | 웨이퍼의 가공 방법 |
US15/483,120 US9887140B2 (en) | 2016-04-13 | 2017-04-10 | Wafer processing method |
CN201710235534.6A CN107301974B (zh) | 2016-04-13 | 2017-04-12 | 晶片的加工方法 |
DE102017206324.6A DE102017206324B4 (de) | 2016-04-13 | 2017-04-12 | Waferbearbeitungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016080348A JP6625926B2 (ja) | 2016-04-13 | 2016-04-13 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017191851A JP2017191851A (ja) | 2017-10-19 |
JP6625926B2 true JP6625926B2 (ja) | 2019-12-25 |
Family
ID=59980924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016080348A Active JP6625926B2 (ja) | 2016-04-13 | 2016-04-13 | ウエーハの加工方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9887140B2 (ja) |
JP (1) | JP6625926B2 (ja) |
KR (1) | KR102232092B1 (ja) |
CN (1) | CN107301974B (ja) |
DE (1) | DE102017206324B4 (ja) |
TW (1) | TWI712079B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
TWI623740B (zh) * | 2016-03-31 | 2018-05-11 | 松下知識產權經營股份有限公司 | 檢查方法、檢查系統及製造方法 |
JP6942244B2 (ja) * | 2018-03-30 | 2021-09-29 | 東京エレクトロン株式会社 | レーザー加工装置 |
JP7404009B2 (ja) * | 2019-09-19 | 2023-12-25 | キオクシア株式会社 | 加工情報管理システム及び加工情報管理方法 |
JP2022025566A (ja) * | 2020-07-29 | 2022-02-10 | 株式会社ディスコ | Si基板生成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10305420A (ja) * | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
JP2001004486A (ja) * | 1999-06-23 | 2001-01-12 | Fujikura Ltd | 光ファイバ母材の検査方法と連続検査装置 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP4494160B2 (ja) | 2004-10-14 | 2010-06-30 | 株式会社トプコン | 光画像計測装置 |
JP5307612B2 (ja) * | 2009-04-20 | 2013-10-02 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP2012096274A (ja) * | 2010-11-04 | 2012-05-24 | Disco Corp | レーザー加工装置 |
JP5912287B2 (ja) | 2011-05-19 | 2016-04-27 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP5882154B2 (ja) * | 2012-07-19 | 2016-03-09 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6148108B2 (ja) * | 2013-08-05 | 2017-06-14 | 株式会社ディスコ | レーザー加工装置 |
DE102013219468B4 (de) * | 2013-09-26 | 2015-04-23 | Siltronic Ag | Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück |
JP6336817B2 (ja) * | 2014-05-12 | 2018-06-06 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
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2016
- 2016-04-13 JP JP2016080348A patent/JP6625926B2/ja active Active
-
2017
- 2017-03-10 TW TW106107995A patent/TWI712079B/zh active
- 2017-04-04 KR KR1020170043629A patent/KR102232092B1/ko active IP Right Grant
- 2017-04-10 US US15/483,120 patent/US9887140B2/en active Active
- 2017-04-12 DE DE102017206324.6A patent/DE102017206324B4/de active Active
- 2017-04-12 CN CN201710235534.6A patent/CN107301974B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201738948A (zh) | 2017-11-01 |
US9887140B2 (en) | 2018-02-06 |
DE102017206324A1 (de) | 2017-10-19 |
DE102017206324B4 (de) | 2020-07-02 |
KR102232092B1 (ko) | 2021-03-24 |
TWI712079B (zh) | 2020-12-01 |
CN107301974B (zh) | 2021-02-19 |
US20170301592A1 (en) | 2017-10-19 |
JP2017191851A (ja) | 2017-10-19 |
KR20170117318A (ko) | 2017-10-23 |
CN107301974A (zh) | 2017-10-27 |
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