JP6522703B2 - 集積されたコイルを有する磁場センサのための方法及び装置 - Google Patents
集積されたコイルを有する磁場センサのための方法及び装置 Download PDFInfo
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- 230000004907 flux Effects 0.000 description 5
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- 238000013459 approach Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0035—Calibration of single magnetic sensors, e.g. integrated calibration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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Description
子、垂直ホール素子、及びCVH素子は、基板に平行な最大感度の軸を有する傾向があり、幾つかの種類のホール素子及びいくつかの半導体磁気抵抗センサは、平面基板に対して垂直な感度の軸を有する(すなわち、ダイの厚さを通じて感度を有する)傾向がある。
コイルの大きさ及び電流を低減することができる。さまざまな感知素子を特定の用途のニーズを満たすために使用できることが理解される。例示的な感知素子は、ホール素子、AMR、GMR、及びMTJ素子を含む。
402及びGMR素子403からの出力は、一緒に又は独立して処理することができる。
。
んでもよいが、より典型的には、約5mAから約50mAであってもよい。例えば、コイル電流が変調される場合、コイル電流のより大きなバースト又はパルスは、感知されるターゲット/鉄の物体がファーエアギャップ状態にあるか否か、例えば、3mmより大きいか否かを判断するために用いることができる。磁場は、典型的には、約0.5mmから約3mmのエアギャップで感知される。
)を含むことができ、これは、コイルが生成する磁束を改善するために軟磁性材料を含むことができることが理解される。
Claims (25)
- 磁場センサであって、
ダイと、
磁場を生成する、前記ダイに近接したコイルと、
前記磁場センサの外部の強磁性ターゲットの動きの結果として前記コイルによって生成される磁場の変化を検出する、前記ダイ上のホール磁場感知素子と、
前記ターゲットの動きによって引き起こされる、前記ホール磁場感知素子に対する前記コイルによって生成される磁場の整列の変化が、前記ホール磁場感知素子によって検出されるように、前記コイルに結合された定電流源と
を備え、
第1の位置への前記強磁性ターゲットの動きは、前記コイルによって生成される磁場のベクトルを前記ホール磁場感知素子に対して実質的に垂直に整列させ、前記ホール磁場感知素子によって観察される磁場を増加させ、第2の位置への前記強磁性ターゲットのさらなる動きは、前記ホール磁場感知素子によって観察される磁場を変化させ、
前記コイルに関連して配置されたGMR磁場感知素子を備え、
前記ホール磁場感知素子は第1のエアギャップ距離のために構成され、前記GMR磁場感知素子は前記第1のエアギャップ距離より大きい第2のエアギャップ距離のために構成される、磁場センサ。 - 前記コイルは前記ダイと一体化される請求項1に記載のセンサ。
- 前記コイルは実質的に平坦である請求項1に記載のセンサ。
- 前記コイルはソレノイドを含む請求項1に記載のセンサ。
- 前記ホール磁場感知素子の一部のみが前記コイルと重なる請求項1に記載のセンサ。
- 前記ホール磁場感知素子は、前記コイルと前記ダイとの間に少なくとも部分的に配置される請求項1に記載のセンサ。
- 前記コイルは、前記ホール磁場感知素子と前記ダイとの間に少なくとも部分的に配置される請求項1に記載のセンサ。
- 前記ホール磁場感知素子の面積の約半分が前記コイルと重なる請求項1に記載のセンサ。
- 前記ホール磁場感知素子の長さの約半分が前記コイルと重なる請求項1に記載のセンサ。
- さらなる磁場感知素子を含む請求項1に記載のセンサ。
- 前記ダイは前記ホール磁場センサからの情報を処理する回路を含む請求項1に記載のセンサ。
- 前記ホール磁場感知素子は、前記コイルに重なる少なくとも一部を有する請求項1に記載のセンサ。
- 磁場センサであって、
ダイと、
磁場を生成するための、前記ダイに近接する第1の手段であって、コイルを含む、第1の手段と、
前記磁場センサの外部の強磁性ターゲットの動きの結果として前記第1の手段によって生成される磁場の変化を検出する第2の手段であって、ホール磁場感知素子を含む、第2の手段と、
前記ターゲットの動きによって引き起こされる、前記ホール磁場感知素子に対する前記コイルによって生成される磁場の整列の変化が、前記ホール磁場感知素子によって検出されるように、前記第1の手段に結合された定電流源と
を備え、
第1の位置への前記強磁性ターゲットの動きは、前記コイルによって生成される磁場のベクトルを前記ホール磁場感知素子に対して実質的に垂直に整列させ、前記ホール磁場感知素子によって観察される磁場を増加させ、第2の位置への前記強磁性ターゲットのさらなる動きは、前記ホール磁場感知素子によって観察される磁場を変化させ、
前記コイルに関連して配置されたGMR磁場感知素子を備え、
前記ホール磁場感知素子は第1のエアギャップ距離のために構成され、前記GMR磁場感知素子は前記第1のエアギャップ距離より大きい第2のエアギャップ距離のために構成される、磁場センサ。 - 前記第1の手段は前記ダイと一体化される請求項13に記載のセンサ。
- 磁場センサ内にダイを提供するステップと、
磁場を生成する、前記ダイに近接したコイルを提供するステップと、
前記磁場センサの外部の強磁性ターゲットの動きの結果として前記コイルによって生成される磁場の変化を検出する、ホール磁場感知素子を提供するステップと、
前記ターゲットの動きによって引き起こされる、前記ホール磁場感知素子に対する前記コイルによって生成される磁場の整列の変化が、前記ホール磁場感知素子によって検出されるように、前記コイルに定電流源を結合するステップと
を含み、
第1の位置への前記強磁性ターゲットの動きは、前記コイルによって生成される磁場のベクトルを前記ホール磁場感知素子に対して実質的に垂直に整列させ、前記ホール磁場感知素子によって観察される磁場を増加させ、第2の位置への前記強磁性ターゲットのさらなる動きは、前記ホール磁場感知素子によって観察される磁場を変化させ、
前記コイルに関連して配置されたGMR磁場感知素子を提供するステップを含み、
前記ホール磁場感知素子は第1のエアギャップ距離のために構成され、前記GMR磁場感知素子は前記第1のエアギャップ距離より大きい第2のエアギャップ距離のために構成される、方法。 - 前記コイルは前記ダイ上に集積される請求項15に記載の方法。
- 前記GMR磁場感知素子は、前記コイルと前記ダイとの間に少なくとも部分的に配置される請求項15に記載の方法。
- 前記コイルは、前記GMR磁場感知素子と前記ダイとの間に少なくとも部分的に配置される請求項15に記載の方法。
- 前記GMR磁場感知素子は、前記コイルに重なる少なくとも一部を有する請求項15に記載の方法。
- 前記GMR磁場感知素子は半導体デバイスを含む請求項1に記載のセンサ。
- 磁場センサであって、
ダイと、
磁場を生成する、前記ダイに近接したコイルであって、前記ダイと一体化される、コイルと、
前記磁場センサの外部の強磁性ターゲットの動きの結果として前記コイルによって生成される磁場の変化を検出する、前記ダイ上のGMR磁場感知素子であって、前記ダイは前記GMR磁場感知素子からの情報を処理する回路を含む、GMR磁場感知素子と、
前記ターゲットの動きによって引き起こされる、前記GMR磁場感知素子に対する前記コイルによって生成される磁場の整列の変化が、前記GMR磁場感知素子によって検出されるように、前記コイルに結合された定電流源と
を備え、
前記強磁性ターゲットの動きは、前記コイルによって生成される磁場のベクトルを前記GMR磁場感知素子に対して実質的に平行に整列させ、
前記コイルに関連して配置されたホール磁場感知素子を備え、
前記ホール磁場感知素子は第1のエアギャップ距離のために構成され、前記GMR磁場感知素子は前記第1のエアギャップ距離より大きい第2のエアギャップ距離のために構成される、磁場センサ。 - 前記GMR磁場感知素子の一部のみが前記コイルと重なる請求項21に記載のセンサ。
- 前記GMR磁場感知素子は、前記コイルと前記ダイとの間に少なくとも部分的に配置される請求項21に記載のセンサ。
- 前記コイルは、前記GMR磁場感知素子と前記ダイとの間に少なくとも部分的に配置される請求項21に記載のセンサ。
- 磁場センサであって、
ダイと、
磁場を生成する、前記ダイに近接したコイルと、
前記磁場センサの外部の強磁性ターゲットの動きの結果として前記コイルによって生成される磁場の変化を検出する、前記ダイ上のGMR磁場感知素子と、
前記ターゲットの動きによって引き起こされる、前記GMR磁場感知素子に対する前記コイルによって生成される磁場の整列の変化が、前記GMR磁場感知素子によって検出されるように、前記コイルに結合された定電流源と
を備え、
第1の位置への前記強磁性ターゲットの動きは、前記コイルによって生成される磁場のベクトルを前記GMR磁場感知素子に対して実質的に平行に整列させ、前記GMR磁場感知素子によって観察される磁場を増加させ、第2の位置への前記強磁性ターゲットのさらなる動きは、前記GMR磁場感知素子によって観察される磁場を変化させ、
前記コイルに関連して配置されたホール磁場感知素子を備え、
前記ホール磁場感知素子は第1のエアギャップ距離のために構成され、前記GMR磁場感知素子は前記第1のエアギャップ距離より大きい第2のエアギャップ距離のために構成される、磁場センサ。
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