JP6507308B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6507308B2 JP6507308B2 JP2018505125A JP2018505125A JP6507308B2 JP 6507308 B2 JP6507308 B2 JP 6507308B2 JP 2018505125 A JP2018505125 A JP 2018505125A JP 2018505125 A JP2018505125 A JP 2018505125A JP 6507308 B2 JP6507308 B2 JP 6507308B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial
- forming
- layer
- drift layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 239000000758 substrate Substances 0.000 claims description 218
- 239000010410 layer Substances 0.000 claims description 75
- 238000000227 grinding Methods 0.000 claims description 50
- 230000002093 peripheral effect Effects 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 9
- 239000000523 sample Substances 0.000 claims description 8
- 238000007689 inspection Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000005498 polishing Methods 0.000 description 9
- 108091006146 Channels Proteins 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005336 cracking Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
2 n+型エピタキシャル層 (ドレイン領域)
4 n-型エピタキシャル層 (ドリフト領域)
5 p型ウェル領域
6 n+型ソース領域
7 p+型ソース領域
8 ゲート絶縁膜
9 ゲート電極
10 ソース電極
11 層間絶縁膜
12 バルク基板
31 コレクタ電極
32 p+型エピタキシャル層 (コレクタ領域)
33 n型エピタキシャル層 (バッファ領域)
34 n+型エミッタ領域
35 p+型エミッタ領域
36 エミッタ電極
200 従来の一般的な製造プロセスにより作製されたエピタキシャル基板
201 面取り面に沿って屈曲若しくは湾曲したバルク基板/エピタキシャル層界面
202 バルク基板とエピタキシャル層が同時に存在する研削面
203 基板外周端部で本来の裏面構造とは異なる層が露出する研削面
210 第1の実施形態に係る製造プロセスにより作製されたエピタキシャル基板
211 全面において本来の裏面構造と同じ面が形成された研削面
220 第2の実施形態に係る製造プロセスにより作製されたエピタキシャル基板
221 テーパーラウンド形状に面取りした基板外周端部
301 U字型状の研削断面を有する砥石
S101 スライシング (インゴットの輪切り) 工程
S102 半導体基板の基板外周端部の面取り工程
S103 半導体基板の研削工程
S104 半導体基板の研磨工程
S105 半導体基板を用いたエピタキシャル成長工程
S201 本発明に係るエピタキシャル基板製造工程
S202 パワー半導体素子製造工程
S203 電気特性のプローブ検査および良品選別工程
S204 基板からチップをダイシングする工程
Claims (6)
- バルク基板とエピタキシャル層の界面が基板外周端部まで平坦に形成され、および基板外周端部のエッジが基板側面に対して傾斜面となっているエピタキシャル基板を準備する工程と、
前記エピタキシャル基板のエピタキシャル層のドリフト層中、およびドリフト層上に半導体素子構造を形成する工程と、
前記エピタキシャル基板を反転して、裏面のバルク基板を研削により除去する工程と、
前記バルク基板の除去により現れた前記エピタキシャル基板のエピタキシャル層に電極を形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記エピタキシャル基板を準備する工程に続けて、裏面のバルク基板を研削により除去する工程を先に実行し、
前記エピタキシャル基板のエピタキシャル層のドリフト層中、およびドリフト層上に半導体素子構造を形成する工程をその後に実行することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記エピタキシャル基板のエピタキシャル層のドリフト層中、およびドリフト層上に半導体素子構造を形成する工程が、
前記エピタキシャル層の第1導電型を有するドリフト層中に、第2導電型を有するウェル領域を形成する工程と、
前記ウェル領域内部に第1導電型を有するソース領域、および第2導電型を有するソース領域を形成する工程と、
前記第1導電型を有するソース領域、前記ウェル領域、および前記ドリフト層を被覆してゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜の真上を被覆してゲート電極を形成する工程と、
前記ゲート電極を覆って層間絶縁膜を形成した後、前記ソース領域、および前記ウェル領域を被覆してソース電極を形成する工程と、
を含むことを特徴とする請求項1、または請求項2に記載の半導体装置の製造方法。 - バルク基板とエピタキシャル層の界面が基板外周端部まで平坦に形成され、および基板外周端部のエッジが基板側面に対して傾斜面となっているエピタキシャル基板を準備する工程と、
前記エピタキシャル基板のエピタキシャル層のドリフト層中、およびドリフト層上に半導体素子構造を形成する工程と、
前記エピタキシャル基板を反転して、裏面のバルク基板を研削により除去する工程と、
前記バルク基板の除去により現れた前記エピタキシャル基板のエピタキシャル層に電極を形成する工程と
前記エピタキシャル基板の裏面の前記電極を全面導通させて、前記エピタキシャル基板の表面の各半導体素子の電極にプローブを当てて電気的特性検査を行う工程と、
前記エピタキシャル基板のチップダイシングを行う工程とを有することを特徴とする半導体装置の製造方法。 - 前記エピタキシャル基板を準備する工程に続けて、裏面のバルク基板を研削により除去する工程を先に実行し、
前記エピタキシャル基板のエピタキシャル層のドリフト層中、およびドリフト層上に半導体素子構造を形成する工程をその後に実行することを特徴とする請求項4に記載の半導体装置の製造方法。 - 前記エピタキシャル基板のエピタキシャル層のドリフト層中、およびドリフト層上に半導体素子構造を形成する工程が、
前記エピタキシャル層の第1導電型を有するドリフト層中に、第2導電型を有するウェル領域を形成する工程と、
前記ウェル領域内部に第1導電型を有するエミッタ領域、および第2導電型を有するエミッタ領域を形成する工程と、
前記第1導電型を有するエミッタ領域、前記ウェル領域、および前記ドリフト層を被覆してゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜の真上を被覆してゲート電極を形成する工程と、
前記ゲート電極を覆って層間絶縁膜を形成した後、前記エミッタ領域、および前記ウェル領域を被覆してエミッタ電極を形成する工程と、
を含むことを特徴とする請求項1、2、4、または請求項5のいずれか1項に記載の半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/058239 WO2017158747A1 (ja) | 2016-03-16 | 2016-03-16 | エピタキシャル基板の製造方法および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017158747A1 JPWO2017158747A1 (ja) | 2018-06-28 |
JP6507308B2 true JP6507308B2 (ja) | 2019-04-24 |
Family
ID=59851165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018505125A Active JP6507308B2 (ja) | 2016-03-16 | 2016-03-16 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6507308B2 (ja) |
WO (1) | WO2017158747A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2023058492A1 (ja) * | 2021-10-05 | 2023-04-13 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01201922A (ja) * | 1988-02-05 | 1989-08-14 | Nec Corp | ウェハーの製造方法 |
JP2002025873A (ja) * | 2000-07-07 | 2002-01-25 | Hitachi Cable Ltd | 半導体ウエハ及びその表面、裏面判別方法 |
JP2006024840A (ja) * | 2004-07-09 | 2006-01-26 | Sumitomo Metal Mining Co Ltd | 燐化ガリウムウェーハのベベリング方法 |
JP5125098B2 (ja) * | 2006-12-26 | 2013-01-23 | 信越半導体株式会社 | 窒化物半導体自立基板の製造方法 |
US8866150B2 (en) * | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
JP5584146B2 (ja) * | 2011-01-20 | 2014-09-03 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2012195539A (ja) * | 2011-03-18 | 2012-10-11 | Toshiba Corp | 半導体装置の製造方法および補強板 |
JP5921089B2 (ja) * | 2011-06-01 | 2016-05-24 | 三菱電機株式会社 | エピタキシャルウエハの製造方法及び半導体装置の製造方法 |
JP6071611B2 (ja) * | 2013-02-13 | 2017-02-01 | Mipox株式会社 | オリエンテーションフラット等切り欠き部を有する、結晶材料から成るウエハの周縁を、研磨テープを使用して研磨することにより円形ウエハを製造する方法 |
JP6268298B2 (ja) * | 2014-08-26 | 2018-01-24 | 株式会社日立製作所 | 4h−SiC絶縁ゲートバイポーラトランジスタおよびその製造方法 |
-
2016
- 2016-03-16 JP JP2018505125A patent/JP6507308B2/ja active Active
- 2016-03-16 WO PCT/JP2016/058239 patent/WO2017158747A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2017158747A1 (ja) | 2017-09-21 |
JPWO2017158747A1 (ja) | 2018-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US12027591B2 (en) | Method for forming a semiconductor device and a semiconductor device | |
US7977210B2 (en) | Semiconductor substrate and semiconductor device | |
US9711463B2 (en) | Dicing method for power transistors | |
US9543395B2 (en) | Normally-off power JFET and manufacturing method thereof | |
US9263525B2 (en) | Silicon carbide semiconductor device and manufacturing method thereof | |
US10468358B2 (en) | Semiconductor device with metal layer along a step portion | |
US11031238B2 (en) | Silicon carbide stacked substrate and manufacturing method thereof | |
US20160372609A1 (en) | Schottky barrier diode | |
US9728606B2 (en) | Silicon carbide semiconductor element and fabrication method thereof | |
WO2014192411A1 (ja) | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 | |
JP2015146406A (ja) | 縦型電子デバイスの製造方法および縦型電子デバイス | |
JP2011035322A (ja) | 半導体装置およびその製造方法 | |
JP5735077B2 (ja) | 半導体装置の製造方法 | |
JP2014236153A (ja) | 半導体装置及びその製造方法 | |
JP5687422B2 (ja) | 半導体装置 | |
CN110521004B (zh) | 半导体装置 | |
JP7163575B2 (ja) | 炭化珪素半導体基板および炭化珪素半導体基板の製造方法 | |
JP2004063860A (ja) | 半導体装置およびその製造方法 | |
JP6507308B2 (ja) | 半導体装置の製造方法 | |
JP7013685B2 (ja) | 炭化珪素半導体装置の選別方法 | |
JP2019201205A (ja) | ワイドバンドギャップ半導体ウェハを処理する方法、複数の薄膜ワイドバンドギャップ半導体ウェハを形成する方法およびワイドバンドギャップ半導体ウェハ | |
US10636708B2 (en) | Method of manufacturing semiconductor device | |
JP6036603B2 (ja) | 炭化珪素半導体装置の製造方法 | |
US20220302309A1 (en) | Strain Enhanced SiC Power Semiconductor Device and Method of Manufacturing | |
JP2022139453A (ja) | 炭化珪素半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181211 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190401 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6507308 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |