JP6499778B1 - 高効率マイクロledモジュールの製造方法 - Google Patents
高効率マイクロledモジュールの製造方法 Download PDFInfo
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- JP6499778B1 JP6499778B1 JP2018015036A JP2018015036A JP6499778B1 JP 6499778 B1 JP6499778 B1 JP 6499778B1 JP 2018015036 A JP2018015036 A JP 2018015036A JP 2018015036 A JP2018015036 A JP 2018015036A JP 6499778 B1 JP6499778 B1 JP 6499778B1
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- semiconductor layer
- micro led
- led
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- 239000004065 semiconductor Substances 0.000 claims abstract description 108
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 63
- 239000010980 sapphire Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 35
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- 229910007637 SnAg Inorganic materials 0.000 description 4
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- 239000004593 Epoxy Substances 0.000 description 2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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Abstract
Description
研究中にあるマイクロLEDモジュールは、複数のLEDセルを含むマイクロLEDをサブマウント基板上にフリップチップボンディングして製造される。
半導体発光部は、エッチングによって形成されたn型半導体層露出領域を含み、n型半導体層露出領域上に複数のLEDセルがマトリックス状に配列されて形成される。
各LEDセルは、n型半導体層、活性層、及びp型導電型半導体層を含み、各LEDセルのp型半導体層にはp型電極パッドが形成される。
また、n型半導体層露出領域にはn型電極パッドが形成される。
一方、サブマウント基板は、マイクロLEDの各電極パッドに対応するように設けられた複数の電極を含む。
上記のようなマイクロLEDモジュールにおいては、複数のLEDセルの上部に成長基板であるサファイア基板が一体化されている。
サブマウント基板に形成された各電極及びマイクロLEDに備えられた電極パッドを介して複数のLEDセルに電源を印加すると、複数のLEDセルが発光する。
このとき、LEDセル、特に、LEDセル内の活性層で発生した光はサファイア基板を経た後で放出されなければならないが、これにより、サファイア基板による光の損失が多かった。
また、マイクロLEDモジュールが微細サイズを有するディスプレイ装置に適用される場合、LEDセルから出た光の進行方向がサファイア基板を経る間に大きく変わり、深刻な画像品質の低下を起こし得る。
しかし、マイクロLEDからサファイア基板を除去する場合、マイクロLEDが大きく反る変形が生じるという問題がある。
また、サファイア基板を除去する普遍的な方式は、レーザーを半導体層とサファイア基板との間の境界、より具体的には、アンドープ半導体層にレーザーのエネルギーを吸収させることによってサファイア基板を除去する方式であるが、複数のLEDセルがある場合、隣り合う各LEDセル間ではエピ層の厚さが約2μm程度と薄いので、レーザーによるエネルギーがサブマウント基板上の回路又はエピ層を損傷させるおそれが大きかった。
また、本発明が解決しようとする他の課題は、サブマウント基板と結合されているマイクロLEDからサファイア基板をレーザーリフトオフ工程で除去し、隣り合う各LEDセル間でレーザーによってマイクロLED又はサブマウント基板が損傷することを抑制できる高効率マイクロLEDモジュールの製造方法を提供することにある。
前記緩衝層を形成する段階は、前記複数のボンディング連結部を形成するためのソルダー(solder)が溶融及び硬化した後、液状又はゲル状の接着物質を前記マイクロLEDと前記サブマウント基板との間に充填して硬化させることが好ましい。
前記マイクロLEDを準備する段階は、前記個別電極パッド及び前記共通電極パッドを形成した後、前記個別電極パッドを露出させる第1パッド露出ホールと前記共通電極パッドを露出させる第2パッド露出ホールとを含む電気絶縁性セルカバー層を形成する段階をさらに含むことが好ましい。
前記サファイア基板から前記半導体層を分離する段階は、前記サファイア基板を通過して前記アンドープ半導体層に吸収される波長のレーザーを照射し、前記アンドープ半導体層と共に前記サファイア基板から前記半導体層を分離し、前記エピ層に残った前記アンドープ半導体層をエッチングして除去する段階を含むことが好ましい。
前記複数のボンディング連結部のそれぞれはソルダーを含み、前記マイクロLEDを前記サブマウント基板にマウンティングする段階は、前記マイクロLEDの上側から前記LEDセルを透過した後に前記個別電極パッドに到逹するレーザーで前記個別電極パッドを加熱し、前記個別電極パッドの温度上昇によって前記ソルダーを溶融させることが好ましい。
サブマウント基板200は、共通電極パッド140及び個別電極パッド150に対応するように形成されたパッド型電極(240、240’)を含む。
本明細書に記載の用語において、個別電極パッドは、一つのLEDセルに備えられたn型半導体層又はp型半導体層に個別的に接続された電極パッドを意味し、共通電極パッドは、複数のLEDセルのn型又はp型半導体層に共通的に接続される電極パッドを意味する。
また、マイクロLED100は、n型半導体層132の第2面に行列配列で配置されている複数のLEDセル130を含む。
複数のLEDセル130は、n型半導体層132から一方向に順次成長された活性層133及びp型半導体層134を含む。
第1面は、サファイア基板、及びその格子不整合の緩和のためにサファイア基板とn型半導体層132との間に形成されたバッファー層又はアンドープ半導体層(図示せず)が除去され、n型半導体層132が露出した面である。
n型外周領域及びn型溝は、n型半導体層132に形成されていた活性層133及びp型半導体層134が除去され、n型半導体層132が露出した部分である。
パッド露出ホールは、各LEDセル130のそれぞれのp型の個別電極パッド150を露出させる複数の第1パッド露出ホールと、n型の共通電極パッド140を露出させる一つ以上の第2パッド露出ホールとを含む。
また、サブマウント基板200側には電極(240、240’)を覆うように電気絶縁性の電極カバー層が形成され、電極カバー層は、電極(240、240’)を露出させる電極露出ホールを含む。
また、本実施形態に係るマイクロLEDモジュールは、サブマウント基板200側の各電極(240’、240)のそれぞれをマイクロLED100側の各電極パッド(140、150)に連結する複数のボンディング連結部(270、260)を含む。
本実施形態において、バンプ(270、260)のそれぞれは、Cuピラー(272、262)と、Cuピラー(272、262)の上端に形成されたソルダー(274、264)とを含む。
Cuピラーを含むバンプ(270、260)の代わりに、他の金属材料を含むバンプが用いられてもよい。
ソルダー(264、274)は、半溶融状態でパッド露出ホールに一部挿入された後で硬化されるので、滑ることなく正確な位置でCuピラー(262、272)と電極パッド(150、140)との間を堅固に固定する。
圧縮変形後に硬化されたソルダー(264、274)は、パッド露出ホール内に挿入され、パッド露出ホールの直径又は最大幅と同一の直径又は最大幅を有する内部ソルダー部と、パッド露出ホールの外側でパッド露出ホールの周辺のセルカバー層160の表面に接している外部ソルダー部とを含む。
緩衝層700は、例えば、エポキシ又はシリコーンなどのように接着力を有する絶縁性接着材料で形成されたものであって、少なくともマイクロLED100がサブマウント基板200にマウンティングされた後、レーザーリフトオフ工程によってマイクロLED100のn型半導体層132からサファイア基板を分離、除去しようとするとき、マイクロLED100とサブマウント基板200との間の結合力を強化させる一方、隣り合う各LEDセル130間でサブマウント基板200の回路が損傷し、マイクロLED100のLEDセルのないエピ層が損傷することを防止する。
また、緩衝層700は、エネルギーを吸収する役割と共に、上述したように、マイクロLED100とサブマウント基板200との間の結合力をさらに強化する。
レーザーリフトオフ工程時、マイクロLED100とサブマウント基板200との間に加えられる引張力を、緩衝層700によって補強されたサブマウント基板200とマイクロLED100との間の結合力より小さくすることによって、サファイア基板が安定的に分離される。
また、緩衝層700は内側部710及び外側部720を含み、内側部710は、個別電極パッド150と個別電極240との間を連結する各内側のボンディング連結部260の周囲を覆っており、外側部720は、共通電極パッド140があるn型半導体層露出領域で共通電極パッド140と共通電極240’との間を連結する外側のボンディング連結部270の周囲を覆っている。
そして、緩衝層700は、サブマウント基板200の外周の空の領域上でマイクロLED100全体の外周の側面を覆う最外周部730をさらに含むことが好ましい。
緩衝層700の最外周部730は、n型半導体層132からサファイア基板が分離、除去されると、分離面を越えない高さでn型半導体層132の側面を覆っている。
以下、図2a〜図2eを参照してマイクロLEDを製造する工程に対して説明する。
まず、図2aに示すように、熱膨張係数が約7.6μmm−1Kである成長基板であるサファイア基板131の主面上にバッファー層(又はアンドープ半導体層)131a、n型半導体層132、活性層133、及びp型半導体層134を含むエピ層が順次形成する。
そして、n型半導体層132と活性層133との間、活性層133とp型半導体層134との間、及びp型半導体層134の露出表面上には任意の各機能を行う他の半導体層が介在し得る。
p型個別電極パッド150とn型共通電極パッド140の厚さを異ならせることによって、p型半導体層134とn型半導体層132との高さの差を補償し、これによって、p型個別電極パッド150の端部の表面とn型共通電極パッド140の端部の表面とを同一の平面上に一致させる。
第1パッド露出ホール162及び第2パッド露出ホール164は、マスクパターンを用いたエッチングによって形成され得る。
本実施形態において、電気絶縁性セルカバー層160は、各LEDセル130の断面プロファイルに沿ってほぼ一定の厚さで形成し、隣り合うLEDセル130間の谷101の幅及び深さを減少させるが、その谷をそのまま維持させることが分かる。
しかし、電気絶縁性セルカバー層160が谷101を完全に埋めるように形成してもよい。
まず、図3を参照すると、ピラーバンプ形成段階前に、約15,000μm×10,000μmのサイズを有し、各LEDセルに対応する各CMOSセルが形成されたSi基盤のサブマウント基板200を準備する。
サブマウント基板200は、Si基盤の基板母材201上に行列状に配列されて形成され、各CMOSセルと連結される複数の電極(240、240’)と、各電極(240、240’)を覆うように形成された絶縁性電極カバー層250とを含み、この絶縁性電極カバー層250には各個別電極240を露出させる各電極露出ホール252を形成する。
サブマウント基板200は、CMOS工程によってCMOSセルが形成された基板母材201にAl又はCu材料によって形成されたパッド型電極240と、電極240の一領域を露出させる電極露出ホール252を備えた状態で基板母材201に形成された電極カバー層250とを含む。
本実施形態において、UBM261は、Ti/Cu積層構造で形成されるものであって、該当の金属のスパッタリングによって形成され得る。
ここで、UBM261は、広い意味で電極240の一部であり得るという点に留意する。
次に、フォトリソグラフィ段階の遂行中に発生したスカム(scum)を除去するスカム除去段階が行われる。
本明細書において、Cuは、Cu又はCuを含むCu合金であり得ることに留意する。
次に、残留物を除去する第2洗浄段階が行う。
UBMエッチング段階後、サブマウント基板200の電極240上のUBM261上にCuピラー262及びソルダー264が順次積層されたバンプ260が形成される。
このとき、急速熱処理(Rapid Thermal Processing:RTP)が有用に利用可能である。
次に、リフロー段階後に再び残留物を除去する第3洗浄段階を行う。
Cuピラーを含むバンプ260の間隔が5μmを超えると、Cuピラーを含むバンプ260の直径及びそれに相応するLEDセルのサイズも大きくなるべきであるので、マイクロLEDを含むディスプレイ装置の精密度を低下させるようになる。
図5に示すように、2.6μmm−1Kの熱膨張係数を有するSi基板母材を基盤とするサブマウント基板200と、Si基板母材の熱膨張係数の約2.5倍に至る7.6μmm−1Kの熱膨張係数を有するサファイア基板131を基盤としたマイクロLED100との間でフリップチップボンディングを行う。
マイクロLED100とサブマウント基板200との間のソルダー264、より具体的には、マイクロLED100の各LEDセル130に形成された電極パッド150とサブマウント基板200との間に介在するバンプ260のソルダー264が加熱され、マイクロLED100とサブマウント基板200とをフリップチップボンディングする。
次に、図7に示すように、マイクロLED100とサブマウント基板200との間に緩衝層700を形成する。
緩衝層700は、複数のボンディング連結部を形成するためのソルダーが溶融及び硬化された後、エポキシ又はシリコーン接着剤のように接着性を有する液状又はゲル状の接着物質をマイクロLED100とサブマウント基板200との間に充填した後、硬化させて形成する。
さらに、緩衝層700は、レーザーリフトオフ工程によってマイクロLED100のn型半導体層132からサファイア基板及びバッファー層(又はアンドープ半導体層)131aを分離、除去しようとするとき、マイクロLED100とサブマウント基板200との間の結合力を強化させる結合力強化層としての役割もすることができる。
緩衝層700は、マイクロLED100とサブマウント基板200との間に全体的に充填され、電極パッド(150、140)と電極(240、240’)とを連結する各ボンディング連結部(260、270)のそれぞれの側面を全体的に覆う。
また、緩衝層700は、内側部710及び外側部720を含み、内側部710は、個別電極パッド150と個別電極240との間を連結する各内側のボンディング連結部260の周囲を覆っており、外側部720は、共通電極パッド140があるn型半導体層露出領域で共通電極パッド140と共通電極240’との間を連結する外側のボンディング連結部270の周囲を覆う。
そして、緩衝層700は、サブマウント基板200の外周の空の領域上でマイクロLED100の外周の側面、より具体的には、n型半導体層132の外周の側面を部分的に覆う。
緩衝層700の最外周部730は、n型半導体層132とサファイア基板131との間の境界を越えない高さでn型半導体層132の側面を覆っている。
緩衝層700の一部がサファイア基板131と接する場合は、サファイア基板131の分離が難しくなる可能性があるので、緩衝層700の高さはサファイア基板131と接しない高さに定められるべきである。
緩衝層700の最外周部730は、複数のLEDセル130の周辺でLEDセル無しで存在するn型領域のエピ層がレーザーによって損傷したり、又はそのn型領域のエピ層を透過したレーザーがサブマウント基板上の回路を加熱することによってサブマウント基板が損傷することを防止する。
サブマウント基板200上にマイクロLED100がマウンティングされ、このマイクロLED100とサブマウント基板200との間に緩衝層700が介在した状態で、サファイア基板131とn型半導体層132との間にあるバッファー層(又はアンドープ半導体層)131aにレーザーを吸収させ、サファイア基板131を分離、除去するレーザーリフト工程を行う。
レーザーは、サファイア基板131を介して(例えば、GaN)バッファー層(又はアンドープ半導体層)131aに照射される。レーザーは、(GaN)バッファー層又はアンドープ(GaN)層131aに吸収されるが、サファイア基板131には吸収されない。
(GaN)バッファー層又はアンドープ(GaN)層131aに吸収されたレーザーによって(GaN)バッファー層又はアンドープ(GaN)層131aが液体−GaとN2とに分解され、これによって、サファイア基板131をマイクロLED100から分離することができる。
レーザーリフトオフ工程時、マイクロLED100とサブマウント基板200との間に加えられる引張力を、緩衝層700によって補強されたサブマウント基板200とマイクロLED100との間の結合力より小さくすることによって、サファイア基板を安定的に分離させることができる。
図8は、本発明の他の実施形態に係るマイクロLEDモジュールを説明するための断面図であって、これを参照すると、サファイア基板131の除去により、バッファー層又はアンドープ半導体層131aの一部が除去され、バッファー層又はアンドープ半導体層131aの一部はn型半導体層132に残っている。
すなわち、上述した実施形態においては、サファイア基板131の除去によってn型半導体層132が露出するが、本実施形態では、サファイア基板131の除去によってバッファー層又はアンドープ半導体層131aが露出する。
代案的には、レーザーにより、バッファー層又はアンドープ半導体層と共にサファイア基板を除去し、エピ層に残ったバッファー層又はアンドープ半導体層をエッチングして除去してもよい。
130 LEDセル
131 サファイア基板
131a バッファー層(又はアンドープ半導体層)
132 n型半導体層
133 活性層
134 p型半導体層
140 n型共通電極パッド
150 p型個別電極パッド
160 電気絶縁性セルカバー層
162、164 (第1、第2)パッド露出ホール
200 サブマウント基板
201 基板母材
240 個別電極
240’ 共通電極
250 絶縁性電極カバー層
252 電極露出ホール
260、270 ボンディング連結部(バンプ)
261 UBM(Under Bump Metallurgy)
262、272 Cuピラー
264、274 ソルダー
300 フォトレジスト
302 電極露出ホール
700 緩衝層
710 内側部
720 外側部
730 最外周部
Claims (7)
- サファイア基板上に半導体層を形成し、前記半導体層に複数のLEDセルを形成し、一つのLEDセルごとに一つの個別電極パッドが割り当てられるように複数の個別電極パッドを形成し、前記複数のLEDセル全体の外周を取り囲む外周領域に共通電極パッドを形成することによってマイクロLEDを準備する段階と、
前記複数の個別電極パッドと1対1で対応する複数の個別電極と前記共通電極パッドに対応する共通電極を含むサブマウント基板を準備する段階と、
前記複数の個別電極パッドと前記複数の個別電極との間が、複数の個別ボンディング連結部によって1対1で連結するように、そして前記共通電極パッドと前記共通電極との間が共通ボンディング連結部によって連結するように前記マイクロLEDを前記サブマウント基板にマウンティングする段階と、
前記マイクロLEDと前記サブマウント基板との間に緩衝層を形成する段階と、
前記サファイア基板と前記半導体層との間にレーザーを照射し、前記サファイア基板から前記半導体層を分離する段階と、を有し、
前記緩衝層は、前記レーザーによって発生したエネルギーを少なくとも隣り合う各LEDセル間で吸収し、
前記マイクロLEDを準備する段階は、前記半導体層の一部分として、バッファー層としてのアンドープ半導体層、n型半導体層、活性層、及びp型半導体層を形成し、前記半導体層を所定の深さだけエッチングし、複数のLEDセルを分離するn型溝、及び前記複数のLEDセル全体の外周を取り囲むn型外周領域を形成する段階と、
前記複数のLEDセルのそれぞれのp型半導体層上に前記個別電極パッドを形成し、前記n型外周領域に前記共通電極パッドを形成する段階と、を含み、
前記緩衝層は、前記複数の個別電極パッドと前記複数の個別電極との間を連結する内側ボンディング連結部の周囲を覆う内側部と、
前記共通電極パッドと前記共通電極との間を連結する外側ボンディング連結部の周囲を覆う外側部と、を含み、
前記緩衝層を形成する段階は、前記緩衝層が前記n型半導体層と前記サファイア基板との間の境界を越えない高さで前記n型半導体層の側面を覆うように前記緩衝層を形成することを特徴とする高効率マイクロLEDモジュールの製造方法。 - 前記緩衝層は、前記マイクロLEDの外周の側面を覆う最外周部を含むことを特徴とする請求項1に記載の高効率マイクロLEDモジュールの製造方法。
- 前記緩衝層を形成する段階は、前記複数のボンディング連結部を形成するためのソルダー(solder)が溶融及び硬化した後、液状又はゲル状の接着物質を前記マイクロLEDと前記サブマウント基板との間に充填して硬化させることを特徴とする請求項1に記載の高効率マイクロLEDモジュールの製造方法。
- 前記マイクロLEDを準備する段階は、前記個別電極パッドの端部の表面と前記共通電極パッドの端部の表面とが同一の平面上にあるように前記個別電極パッドと前記共通電極パッドを異なる厚さで形成する段階を含むことを特徴とする請求項1に記載の高効率マイクロLEDモジュールの製造方法。
- 前記マイクロLEDを準備する段階は、前記個別電極パッド及び前記共通電極パッドを形成した後、前記個別電極パッドを露出させる第1パッド露出ホールと前記共通電極パッドを露出させる第2パッド露出ホールとを含む電気絶縁性セルカバー層を形成する段階をさらに含むことを特徴とする請求項1に記載の高効率マイクロLEDモジュールの製造方法。
- 前記サファイア基板から前記半導体層を分離する段階は、前記サファイア基板を通過して前記アンドープ半導体層に吸収される波長のレーザーを照射し、前記アンドープ半導体層と共に前記サファイア基板から前記半導体層を分離し、エピ層に残った前記アンドープ半導体層をエッチングして除去する段階を含むことを特徴とする請求項1に記載の高効率マイクロLEDモジュールの製造方法。
- 前記複数のボンディング連結部のそれぞれはソルダーを含み、
前記マイクロLEDを前記サブマウント基板にマウンティングする段階は、前記マイクロLEDの上側から前記LEDセルを透過した後に前記個別電極パッドに到逹するレーザーで前記個別電極パッドを加熱し、前記個別電極パッドの温度上昇によって前記ソルダーを溶融させることを特徴とする請求項1に記載の高効率マイクロLEDモジュールの製造方法。
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US10910350B2 (en) * | 2014-05-24 | 2021-02-02 | Hiphoton Co., Ltd. | Structure of a semiconductor array |
US10714464B2 (en) * | 2016-02-16 | 2020-07-14 | Glo Ab | Method of selectively transferring LED die to a backplane using height controlled bonding structures |
KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
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CN111864031A (zh) * | 2019-05-06 | 2020-10-30 | 上海集耀电子有限公司 | 一种led点光源 |
CN114141914A (zh) * | 2021-12-01 | 2022-03-04 | 东莞市中麒光电技术有限公司 | 衬底剥离方法 |
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