JP6475997B2 - フラットパネルディスプレイ用配線膜、およびAl合金スパッタリングターゲット - Google Patents
フラットパネルディスプレイ用配線膜、およびAl合金スパッタリングターゲット Download PDFInfo
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- 229910000838 Al alloy Inorganic materials 0.000 title claims description 42
- 238000005477 sputtering target Methods 0.000 title claims description 23
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 34
- 239000003870 refractory metal Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 149
- 239000010408 film Substances 0.000 description 54
- 238000010438 heat treatment Methods 0.000 description 33
- 229910045601 alloy Inorganic materials 0.000 description 29
- 239000000956 alloy Substances 0.000 description 29
- 239000010409 thin film Substances 0.000 description 23
- 229910052759 nickel Inorganic materials 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 238000005324 grain boundary diffusion Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000003917 TEM image Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910018518 Al—Ni—La Inorganic materials 0.000 description 1
- 229910000858 La alloy Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Description
希土類元素、Ni、およびCoは、いずれもAlの耐熱性向上に寄与する元素であり、後記するように第一層と積層することによって更に400以上500℃以下の高温域での耐熱性向上に寄与する。
ガラス基板上に、基板側から順に、Moからなる膜厚70nmの第一層、表1に示す組成を有する膜厚300nmのAl−Ni−La合金からなる第二層、Moからなる膜厚70nmの第一層(以下、「第三層」という)を順次、スパッタリング法を用いて積層した。なお、No.2〜No.4の第二層は、膜に対応した組成を有するスパッタリングターゲットを用いて蒸着させた。この際、第二層が表1に示す組成となるようにDCパワーの比率を制御した。またNo.1の第二層は純Alスパッタリングターゲットを用いて膜厚300nmの純Al膜を成膜した。第二層の組成は、ICP発光分光分析装置を用い、定量分析して確認した。なお、表中、at%は原子%を意味する。
DCマグネトロンスパッタ装置
ターゲットサイズ:4インチφ×5mmt
Arガス圧:2mTorr
DCパワー:250W
極間距離:100mm
基板温度:室温
幅100μm、長さ10のラインアンドスペースパターンを形成した以外は、上記実験1と同様にして各試料を作製した。なお、本実施例では極間距離を通常の55mmではなく、100mmに設定したスパッタ装置を用いた。そのため、本実施例では55mmの極間距離で成膜した場合と比べて膜中に取り込まれるスパッタチャンバー内に残留する主として酸素、窒素、水分などのガス成分が多くなり、電気抵抗率が2割程度高くなる傾向を示した。
詳細には、第二層に純Alを用いたNo.1(図中、◆)の電気抵抗率は、加熱温度が高くなると増加する傾向を示したが、その程度は非常に低いものであった。
また第二層に本発明の要件を満足するAl合金で構成されたNo.2、3(図中、■、▲)の電気抵抗率も加熱温度が高くなると増加する傾向を示したが、合格基準の電気抵抗率の範囲内に抑えることができた。その増加率は、純Alに比べて高いものであった。
これに対し、No.4(図中、●)は、第二層であるAl合金膜に含まれる合金元素の合計含有量が0.22原子%と多い例であり、電気抵抗率が上昇した。
No.5、6はガラス基板上に、基板側から順に、Moからなる膜厚70nmの第一層、膜厚1000nmの第二層、Moからなる膜厚70nmの第三層を順次、スパッタリング法を用いて積層した。なお、No.5の第二層は純Al膜であり、No.6の第二層はAl−0.02at%Ni−0.04at%La合金膜である。夫々の膜に対応した組成を有するスパッタリングターゲットを用いて蒸着させた。スパッタリング条件は実験1と同じである。また第二層の組成は実験1と同様にして確認した。
2 反応層
3 第一層
4 第二層
5 第三層
6 Mo反応層
7 Mo拡散層
Claims (8)
- 基板上に形成されるフラットパネルディスプレイ用の配線膜であって、
前記配線膜は、Mo、Ti、Cr、W、およびTaよりなる群から選択される少なくとも一種以上の高融点金属を含む第一層と;
希土類元素及びCoをそれぞれ0.01原子%以上含み、かつ前記希土類元素及びCoの合計の含有量が0.055原子%以下であるAl合金からなる第二層とが積層された積層構造からなることを特徴とするフラットパネルディスプレイ用配線膜。 - 前記第一層と前記第二層との界面に、前記高融点金属の少なくとも1種とAlとを含む反応層を有するものである請求項1に記載のフラットパネルディスプレイ用配線膜。
- 前記反応層は、400℃以上、500℃以下の熱履歴によって形成されるものである請求項2に記載のフラットパネルディスプレイ用配線膜。
- 前記希土類元素は、Nd、La、Gd、Dy、Y、およびCeよりなる群から選択される少なくとも一種以上である請求項1〜3のいずれかに記載のフラットパネルディスプレイ用配線膜。
- 前記反応層は、AlとMoの化合物を含むものである請求項2又は3に記載のフラットパネルディスプレイ用配線膜。
- 基板側から順に、前記第一層および前記第二層の積層構造の配線膜がこの順序で形成されているか、または、前記第二層および前記第一層の積層構造の配線膜がこの順序で形成されている請求項1〜5のいずれかに記載のフラットパネルディスプレイ用配線膜。
- 基板側から順に、前記第一層、前記第二層、および前記第一層の積層構造の配線膜がこの順序で形成されており、前記第一層と前記第二層との界面には、いずれも、前記反応層が形成されている請求項2、3又は5のいずれかに記載のフラットパネルディスプレイ用配線膜。
- 請求項1に記載のフラットパネルディスプレイ用配線膜の形成に用いられるスパッタリングターゲットであって、
前記スパッタリングターゲットは、希土類元素及びCoをそれぞれ0.01原子%以上含み、前記希土類元素及びCoの合計の含有量が0.055原子%以下であって、残部:Alおよび不可避不純物であるAl合金スパッタリングターゲット。
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