JP6431427B2 - パターン形成方法 - Google Patents
パターン形成方法 Download PDFInfo
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- JP6431427B2 JP6431427B2 JP2015073718A JP2015073718A JP6431427B2 JP 6431427 B2 JP6431427 B2 JP 6431427B2 JP 2015073718 A JP2015073718 A JP 2015073718A JP 2015073718 A JP2015073718 A JP 2015073718A JP 6431427 B2 JP6431427 B2 JP 6431427B2
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- 238000000034 method Methods 0.000 title claims description 36
- 230000007261 regionalization Effects 0.000 title description 11
- 239000011248 coating agent Substances 0.000 claims description 117
- 238000000576 coating method Methods 0.000 claims description 117
- 239000000758 substrate Substances 0.000 claims description 87
- 239000007788 liquid Substances 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 claims description 8
- 230000005660 hydrophilic surface Effects 0.000 claims 1
- 230000005661 hydrophobic surface Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 106
- 239000000243 solution Substances 0.000 description 35
- 239000010410 layer Substances 0.000 description 21
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical group CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Description
図1および図2は、第1実施形態のパターン形成方法を示す断面図である。
図7は、第2実施形態のパターン形成方法を示す断面図である。
図8および図9は、第3実施形態のパターン形成方法を示す断面図である。本実施形態では、塗布膜2およびフォトレジスト膜3の代わりに、第1および第2のフォトレジスト膜5、6が使用される。
図10は、第4実施形態のパターン形成方法を示す断面図である。本実施形態では、ポジ型のフォトレジスト膜3の代わりに、ネガ型のフォトレジスト膜3が使用される。そのため、露光部分のフォトレジスト膜3ではなく、非露光部分のフォトレジスト膜3が溶解除去される。
3:フォトレジスト膜、3a、3b:レジストパターン、4:空隙、
5:第1のフォトレジスト膜、5a:第1のレジストパターン、
6:第2のフォトレジスト膜、6a:第2のレジストパターン、
11:下地基板、12:絶縁層、13:配線層、14:第1のメモリ絶縁膜、
15:電荷蓄積層、16:第2のメモリ絶縁膜、17:チャネル半導体層、
18:絶縁膜、19:層間絶縁膜、20:プラグ配線
Claims (6)
- 凸部と凹部とを有する基板上に、第1粘度を有する第1塗布液を用いて、前記凸部の上端が露出するように第1膜を形成し、
前記第1膜上に、前記第1粘度よりも高い第2粘度を有する第2塗布液を用いて、前記凸部の上端を覆うように感光性の第2膜を形成し、
前記第2膜を露光し、
前記第2膜を現像液により現像して、前記第2膜の非露光領域または露光領域のいずれか一方に第2パターンを形成し、
前記第2パターンから露出した前記第1膜を、第1パターンに対して溶解性を有し、かつ、前記第2パターンに対して溶解性を有さない溶液により溶解除去して、前記第1膜から前記第1パターンを形成する、
ことを含むパターン形成方法。 - 前記第1膜の形成前に、前記基板の表面を親水化することを含む、請求項1に記載のパターン形成方法。
- 前記第2膜の形成前に、前記基板および前記第1膜の表面を疎水化することを含む、請求項1または2に記載のパターン形成方法。
- 前記第1膜は、非感光性である、請求項1から3のいずれか1項に記載のパターン形成方法。
- 前記溶液は、前記現像液である、請求項1から4のいずれか1項に記載のパターン形成方法。
- さらに、前記第1および第2パターンをマスクとして使用して、前記凹部の底部の前記基板内にイオンを注入することを含む、請求項1から5のいずれか1項に記載のパターン形成方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015073718A JP6431427B2 (ja) | 2015-03-31 | 2015-03-31 | パターン形成方法 |
US14/844,152 US9437477B1 (en) | 2015-03-31 | 2015-09-03 | Pattern forming method |
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---|---|---|---|
JP2015073718A JP6431427B2 (ja) | 2015-03-31 | 2015-03-31 | パターン形成方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016194560A JP2016194560A (ja) | 2016-11-17 |
JP6431427B2 true JP6431427B2 (ja) | 2018-11-28 |
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JP2015073718A Active JP6431427B2 (ja) | 2015-03-31 | 2015-03-31 | パターン形成方法 |
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US (1) | US9437477B1 (ja) |
JP (1) | JP6431427B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108919614A (zh) * | 2018-07-20 | 2018-11-30 | 湘能华磊光电股份有限公司 | 图形化衬底的方法 |
CN116643453B (zh) * | 2023-07-25 | 2023-11-10 | 捷捷微电(南通)科技有限公司 | 一种基于半导体器件的光刻方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05158245A (ja) | 1991-12-03 | 1993-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3824334B2 (ja) * | 1995-08-07 | 2006-09-20 | 東京応化工業株式会社 | シリカ系被膜形成用塗布液及び被膜形成方法 |
JP2003309172A (ja) * | 2002-04-17 | 2003-10-31 | Nec Electronics Corp | デュアルダマシンプロセスにおけるパターン形成方法 |
JP2008114195A (ja) | 2006-11-08 | 2008-05-22 | Tokyo Ohka Kogyo Co Ltd | 平坦化塗布方法 |
JP2008149283A (ja) | 2006-12-19 | 2008-07-03 | Tokyo Ohka Kogyo Co Ltd | 塗膜形成方法 |
JP2009283713A (ja) | 2008-05-22 | 2009-12-03 | Mitsumi Electric Co Ltd | レジスト塗布方法及び半導体装置の製造方法 |
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2015
- 2015-03-31 JP JP2015073718A patent/JP6431427B2/ja active Active
- 2015-09-03 US US14/844,152 patent/US9437477B1/en active Active
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JP2016194560A (ja) | 2016-11-17 |
US9437477B1 (en) | 2016-09-06 |
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