JP6098044B2 - 多結晶ダイヤモンド砥粒の製造方法 - Google Patents
多結晶ダイヤモンド砥粒の製造方法 Download PDFInfo
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- JP6098044B2 JP6098044B2 JP2012118606A JP2012118606A JP6098044B2 JP 6098044 B2 JP6098044 B2 JP 6098044B2 JP 2012118606 A JP2012118606 A JP 2012118606A JP 2012118606 A JP2012118606 A JP 2012118606A JP 6098044 B2 JP6098044 B2 JP 6098044B2
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- polycrystalline diamond
- abrasive grains
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- 229910003460 diamond Inorganic materials 0.000 title claims description 181
- 239000010432 diamond Substances 0.000 title claims description 181
- 239000006061 abrasive grain Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000013078 crystal Substances 0.000 claims description 51
- 239000011163 secondary particle Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 31
- 239000003575 carbonaceous material Substances 0.000 claims description 16
- 239000011230 binding agent Substances 0.000 claims description 11
- 238000001308 synthesis method Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 31
- 239000010439 graphite Substances 0.000 description 30
- 229910002804 graphite Inorganic materials 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 239000002245 particle Substances 0.000 description 22
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 239000002002 slurry Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- -1 sintering aids Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Description
Claims (2)
- 炭素材料を、12GPa以上の圧力、1500℃以上の温度で結合剤を用いずに焼結してダイヤモンドに直接的に変換し、1μm未満の結晶粒径を有する多結晶ダイヤモンドを得る工程と、
前記多結晶ダイヤモンドを、平均二次粒子径が1μm以上200μm以下となるよう加工する工程とを備え、
前記炭素材料は、気相合成法によって準備され、
前記炭素材料の不可避不純物濃度は、0.01質量%以下である、多結晶ダイヤモンド砥粒の製造方法。 - 前記多結晶ダイヤモンドを加工する工程において、
金属、セラミック、またはそれらの複合体を前記多結晶ダイヤモンドに衝突させることで、前記多結晶ダイヤモンドを粉砕する、請求項1に記載の多結晶ダイヤモンド砥粒の製造方法。
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JP2012118606A JP6098044B2 (ja) | 2012-05-24 | 2012-05-24 | 多結晶ダイヤモンド砥粒の製造方法 |
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JP2012118606A JP6098044B2 (ja) | 2012-05-24 | 2012-05-24 | 多結晶ダイヤモンド砥粒の製造方法 |
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JP2013245126A JP2013245126A (ja) | 2013-12-09 |
JP6098044B2 true JP6098044B2 (ja) | 2017-03-22 |
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Cited By (1)
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CN110936284A (zh) * | 2018-09-21 | 2020-03-31 | 邵丙璜 | 一种半导体晶片的研磨方法 |
Families Citing this family (5)
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CN105856078B (zh) * | 2016-04-19 | 2017-11-07 | 南京航空航天大学 | 一种自锐性烧结磨料制备方法和用途 |
CN107866740B (zh) * | 2016-09-26 | 2019-08-27 | 江信有限公司 | 硅聚晶烧结物及其制造方法 |
CN108437244B (zh) * | 2018-03-22 | 2019-09-24 | 山东大学 | 光伏多晶硅电池片的游离-固结磨粒复合线锯切割方法 |
CN109701447B (zh) * | 2019-03-07 | 2021-05-07 | 吉林大学 | 一种无触媒的低压制备纳米聚晶金刚石的方法 |
CN112678817A (zh) * | 2021-01-08 | 2021-04-20 | 南方科技大学 | 一种毫米多晶金刚石的制备方法 |
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JPH0393694A (ja) * | 1989-09-06 | 1991-04-18 | Sumitomo Electric Ind Ltd | 砥粒の製造方法 |
JPH0693995B2 (ja) * | 1990-07-24 | 1994-11-24 | 住友石炭鉱業株式会社 | ダイヤモンド砥粒の製造方法 |
JPH08323604A (ja) * | 1995-05-31 | 1996-12-10 | Canon Inc | SiCの研磨方法および光学素子の製造方法 |
JP2002274825A (ja) * | 2001-03-19 | 2002-09-25 | Matsushita Electric Ind Co Ltd | グラファイト粉体の製造方法 |
JP4203900B2 (ja) * | 2002-10-11 | 2009-01-07 | 住友電気工業株式会社 | ダイヤモンド多結晶体およびその製造方法 |
JP2004174680A (ja) * | 2002-11-28 | 2004-06-24 | Kanai Hiroaki | 固定砥粒式ソーワイヤ及び砥粒固着方法 |
US20090285744A1 (en) * | 2005-06-29 | 2009-11-19 | Nippon Kayaku Kabushiki Kaisha | Process For Producing Fine Diamond and Fine Diamond |
JP5070688B2 (ja) * | 2005-08-22 | 2012-11-14 | 住友電気工業株式会社 | 高硬度ダイヤモンド多結晶体及びその製造方法 |
JP2009067610A (ja) * | 2007-09-11 | 2009-04-02 | Sumitomo Electric Ind Ltd | 高硬度ダイヤモンド多結晶体およびその製造方法 |
JP2009067609A (ja) * | 2007-09-11 | 2009-04-02 | Sumitomo Electric Ind Ltd | 高純度ダイヤモンド多結晶体およびその製造方法 |
JP2009007248A (ja) * | 2008-08-15 | 2009-01-15 | Sumitomo Electric Ind Ltd | ダイヤモンド多結晶体 |
JP4590513B2 (ja) * | 2008-12-04 | 2010-12-01 | 国立大学法人秋田大学 | ソーワイヤおよびその製造方法 |
JP2011040427A (ja) * | 2009-08-06 | 2011-02-24 | Yamaguchi Seiken Kogyo Kk | 研磨剤組成物 |
JP2011150865A (ja) * | 2010-01-21 | 2011-08-04 | Hitachi Maxell Energy Ltd | リチウム二次電池用負極材料、その製造方法およびリチウム二次電池 |
JP5674009B2 (ja) * | 2010-09-27 | 2015-02-18 | 住友電気工業株式会社 | 高硬度導電性ダイヤモンド多結晶体およびその製造方法 |
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CN110936284A (zh) * | 2018-09-21 | 2020-03-31 | 邵丙璜 | 一种半导体晶片的研磨方法 |
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