JP6082653B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP6082653B2 JP6082653B2 JP2013103651A JP2013103651A JP6082653B2 JP 6082653 B2 JP6082653 B2 JP 6082653B2 JP 2013103651 A JP2013103651 A JP 2013103651A JP 2013103651 A JP2013103651 A JP 2013103651A JP 6082653 B2 JP6082653 B2 JP 6082653B2
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 239000000463 material Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 265
- 239000000758 substrate Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 20
- 230000004313 glare Effects 0.000 description 16
- 238000005566 electron beam evaporation Methods 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 238000001017 electron-beam sputter deposition Methods 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 230000012447 hatching Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
2 n型GaN層
3 発光層
4 p型GaN層
5 p側半導体層上電極層
6 フリンジ層
7 p側高反射層
8 p側拡散防止層
9 p側高反射キャップ層
10 絶縁キャップ層
11 n側ビア電極
12 絶縁フロート層
13 n側高反射層
14 導電層
14n 素子n側接続電極層(n側キャップ層)
14p 素子p側接続電極層
21 支持基板
22 絶縁層
23 融着層
23n、23np、23p 電極層
23no、23po ボンディング用開口
24 グレア光吸収層
25 全面保護膜
26 裏面金属層
31A、31B 半導体発光素子
41 パッケージ基板
42 接合材
43p、43n ワイヤー
44p、44n 給電用パッド
45 蛍光体層
CH コンタクトホール
CV 凹部
En、EnA、EnB n側電極
Ep、EpA、EpB p側電極
ES 給電部
HL 穴
IS pn電極間絶縁層
Claims (6)
- 第1導電型の第1半導体層と、前記第1半導体層上に形成された発光層と、前記発光層上に形成され、前記第1導電型と逆の第2導電型を有する第2半導体層と、前記第1半導体層と電気的に接続された第1電極と、前記第2半導体層と電気的に接続された第2電極とを備える半導体発光素子と、
前記半導体発光素子を覆う蛍光体層と、
前記蛍光体層に覆われた領域内に配置され、前記第1電極または前記第2電極と電気的に接続された給電部と
を有し、
前記給電部は、
第1材料で形成され、前記第1電極または前記第2電極と電気的に接続される第1材料層と、
前記蛍光体層の発する蛍光を、前記第1材料より吸収する第2材料で、前記第1材料層上の一部に形成される第2材料層と
を備える半導体発光装置。 - 前記第2材料は、前記半導体発光素子の発光する色の光を、前記第1材料より吸収する請求項1に記載の半導体発光装置。
- 前記第2材料は、Ti、Cr、Ni、またはTiNである請求項1または2に記載の半導体発光装置。
- 前記給電部において、前記第2材料層は、ワイヤーボンディングを行う位置以外の位置において、前記第1材料層を覆っている請求項1〜3のいずれか1項に記載の半導体発光装置。
- 前記給電部の、前記半導体発光素子側の端部領域は、平面視上、前記半導体発光素子の端部領域と重なっている請求項1〜4のいずれか1項に記載の半導体発光装置。
- 前記半導体発光素子は、
前記第2半導体層側から、前記発光層を貫通して前記第1半導体層を露出するように形成された凹部と、
前記凹部の底面で前記第1半導体層と電気的に接続し、前記第2半導体層の上面上方に延在して形成された前記第1電極と、
前記第2半導体層の上面で前記第2半導体層と電気的に接続し、平面視上前記凹部を囲む穴であって、該穴を介して前記第1電極が前記凹部内から前記第2半導体層の上方に延在する穴が形成された前記第2電極と、
前記第2半導体層の上方で、前記第1電極と前記第2電極との間に配置された絶縁層と
を有し、
前記第2電極は、前記発光層側から入射した光を反射させる光反射電極であり、
前記第1電極は、平面視上、前記穴を覆うように形成され、前記発光層側から入射した光を反射する光反射電極層を含み、
前記第1電極の光反射電極層の縁領域は、平面視上、前記第2電極の穴を画定する縁領域と重なるように形成されている請求項1〜5のいずれか1項に記載の半導体発光装置。
Priority Applications (1)
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---|---|---|---|
JP2013103651A JP6082653B2 (ja) | 2013-05-16 | 2013-05-16 | 半導体発光装置 |
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---|---|---|---|
JP2013103651A JP6082653B2 (ja) | 2013-05-16 | 2013-05-16 | 半導体発光装置 |
Publications (2)
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JP2014225541A JP2014225541A (ja) | 2014-12-04 |
JP6082653B2 true JP6082653B2 (ja) | 2017-02-15 |
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JP (1) | JP6082653B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7071648B2 (ja) | 2019-05-16 | 2022-05-19 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3322300B2 (ja) * | 1997-11-14 | 2002-09-09 | 日亜化学工業株式会社 | 窒化ガリウム系半導体発光素子と受光素子 |
US20040188696A1 (en) * | 2003-03-28 | 2004-09-30 | Gelcore, Llc | LED power package |
JP4632697B2 (ja) * | 2004-06-18 | 2011-02-16 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
WO2012002580A1 (ja) * | 2010-07-01 | 2012-01-05 | シチズンホールディングス株式会社 | Led光源装置及びその製造方法 |
US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN203300702U (zh) * | 2010-10-29 | 2013-11-20 | 东芝照明技术株式会社 | 发光模块以及照明设备 |
JP2012216602A (ja) * | 2011-03-31 | 2012-11-08 | Rohm Co Ltd | Led光源基板およびledランプ |
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