JP6030041B2 - 研磨装置および研磨方法 - Google Patents
研磨装置および研磨方法 Download PDFInfo
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- JP6030041B2 JP6030041B2 JP2013228240A JP2013228240A JP6030041B2 JP 6030041 B2 JP6030041 B2 JP 6030041B2 JP 2013228240 A JP2013228240 A JP 2013228240A JP 2013228240 A JP2013228240 A JP 2013228240A JP 6030041 B2 JP6030041 B2 JP 6030041B2
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- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 39
- 238000012806 monitoring device Methods 0.000 claims description 23
- 238000012544 monitoring process Methods 0.000 claims description 12
- 230000010355 oscillation Effects 0.000 claims description 10
- 239000010408 film Substances 0.000 description 60
- 238000001514 detection method Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 14
- 230000001360 synchronised effect Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
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- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
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- 229910003460 diamond Inorganic materials 0.000 description 2
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- 239000002245 particle Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
上述した参考例によれば、トップリングの揺動に起因する振動成分がテーブルモータの出力電流信号から除去される。したがって、研磨監視装置は、振動成分を含まない出力電流信号に基づいて基板研磨の進捗を正確に監視することができる。
上述した参考例によれば、基板の構造に起因する振動成分が渦電流センサの膜厚信号から除去される。したがって、研磨監視装置は、振動成分を含まない膜厚信号に基づいて基板研磨の進捗を正確に監視することができる。
2 研磨テーブル
3 トップリング
4 研磨液供給ノズル
5 テーブル軸
6 テーブルモータ
7 トップリングシャフト
8 トップリングアーム
9 トップリング旋回軸
24 ドレッシング装置
26 ドレッサ
27 ドレッサアーム
28 ドレッサ旋回軸
30 動作制御部
32 電流計
35 フィルター装置
40 研磨監視装置
50 渦電流センサ
102 センサコイル
103 交流電源
105 同期検波部
111 ボビン
112 励磁コイル
113 検出コイル
114 バランスコイル
120 バンドパスフィルタ
121 ブリッジ回路
123 高周波アンプ
124 位相シフト回路
125 cos同期検波回路
126 sin同期検波回路
127,128 ローパスフィルタ
130 ベクトル演算回路
131 θ処理回路
Claims (4)
- 研磨パッドを支持する研磨テーブルと、
前記研磨テーブルを回転させるテーブルモータと、
基板を前記研磨パッドに押し付けて該基板を研磨するトップリングと、
前記基板の研磨中に前記研磨パッド上を揺動しながら前記研磨パッドをドレッシングするドレッサと、
前記ドレッサの動作を制御する動作制御部と、
前記研磨テーブルを回転させているときの前記テーブルモータに流れる電流を示す出力電流信号を取得し、前記ドレッサの揺動周期を前記動作制御部から取得し、前記揺動周期に相当する周波数を持つ振動成分を、前記テーブルモータの前記出力電流信号から除去するフィルター装置と、
前記振動成分が除去された前記出力電流信号に基づいて前記基板の研磨の進捗を監視する研磨監視装置とを備えたことを特徴とする研磨装置。 - 前記フィルター装置は、前記ドレッサの揺動周期に相当する周波数を公式f[Hz]=1/T[s]を用いて算出することを特徴とする請求項1に記載の研磨装置。
- ドレッサの動作を制御する動作制御部から該ドレッサの揺動周期を取得し、
研磨テーブルをテーブルモータにより回転させ、
基板を前記研磨テーブル上の研磨パッドに押し付けて該基板を研磨し、
前記基板の研磨中に、ドレッサを前記研磨パッド上で揺動させて前記研磨パッドをドレッシングし、
前記研磨テーブルを回転させているときの前記テーブルモータに流れる電流を示す出力電流信号を取得し、
前記ドレッサの揺動周期に相当する周波数を持つ振動成分を、前記テーブルモータの前記出力電流信号から除去し、
前記振動成分が除去された前記出力電流信号に基づいて前記基板の研磨の進捗を監視することを特徴とする研磨方法。 - 前記ドレッサの揺動周期に相当する周波数を公式f[Hz]=1/T[s]を用いて算出する工程をさらに含むことを特徴とする請求項3に記載の研磨方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013228240A JP6030041B2 (ja) | 2013-11-01 | 2013-11-01 | 研磨装置および研磨方法 |
KR1020140147073A KR101711259B1 (ko) | 2013-11-01 | 2014-10-28 | 연마 장치 및 연마 방법 |
TW103137162A TWI568539B (zh) | 2013-11-01 | 2014-10-28 | 研磨裝置及研磨方法 |
SG10201407062PA SG10201407062PA (en) | 2013-11-01 | 2014-10-29 | Polishing apparatus and polishing method |
US14/527,714 US9272389B2 (en) | 2013-11-01 | 2014-10-29 | Polishing apparatus and polishing method |
CN201410605525.8A CN104608055B (zh) | 2013-11-01 | 2014-10-31 | 研磨装置及研磨方法 |
KR1020170010910A KR101901508B1 (ko) | 2013-11-01 | 2017-01-24 | 연마 장치 및 연마 방법 |
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JP2013228240A JP6030041B2 (ja) | 2013-11-01 | 2013-11-01 | 研磨装置および研磨方法 |
Publications (3)
Publication Number | Publication Date |
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JP2015085487A JP2015085487A (ja) | 2015-05-07 |
JP2015085487A5 JP2015085487A5 (ja) | 2016-04-21 |
JP6030041B2 true JP6030041B2 (ja) | 2016-11-24 |
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Country Status (6)
Country | Link |
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US (1) | US9272389B2 (ja) |
JP (1) | JP6030041B2 (ja) |
KR (2) | KR101711259B1 (ja) |
CN (1) | CN104608055B (ja) |
SG (1) | SG10201407062PA (ja) |
TW (1) | TWI568539B (ja) |
Cited By (1)
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2013
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US20200016720A1 (en) * | 2018-07-13 | 2020-01-16 | Ebara Corporation | Polishing apparatus and polishing method |
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US9272389B2 (en) | 2016-03-01 |
CN104608055B (zh) | 2017-09-22 |
JP2015085487A (ja) | 2015-05-07 |
TW201527045A (zh) | 2015-07-16 |
KR20150051150A (ko) | 2015-05-11 |
US20150125971A1 (en) | 2015-05-07 |
KR101901508B1 (ko) | 2018-09-21 |
TWI568539B (zh) | 2017-02-01 |
CN104608055A (zh) | 2015-05-13 |
KR101711259B1 (ko) | 2017-02-28 |
SG10201407062PA (en) | 2015-06-29 |
KR20170015406A (ko) | 2017-02-08 |
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