JP6004635B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6004635B2 JP6004635B2 JP2011261009A JP2011261009A JP6004635B2 JP 6004635 B2 JP6004635 B2 JP 6004635B2 JP 2011261009 A JP2011261009 A JP 2011261009A JP 2011261009 A JP2011261009 A JP 2011261009A JP 6004635 B2 JP6004635 B2 JP 6004635B2
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000012535 impurity Substances 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000002834 transmittance Methods 0.000 claims description 15
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 30
- 238000005468 ion implantation Methods 0.000 description 29
- 238000003384 imaging method Methods 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Claims (10)
- 半導体基板の上に互いに異なる膜厚を有する複数の領域を含むマスクパターンを形成し、
前記マスクパターンの膜厚が互いに異なる前記複数の領域を通して前記半導体基板に第1導電型の不純物イオンを注入して、前記半導体基板の表面から不純物濃度のピーク位置までの深さが互いに異なる第1導電型の複数の不純物領域を形成し、
前記複数の不純物領域のうちの第1導電型の第1不純物領域の不純物濃度のピーク位置と前記表面との間に位置する第2導電型の第1不純物領域、および、前記複数の不純物領域のうちの第1導電型の第2不純物領域の不純物濃度のピーク位置と前記表面との間に位置し、トランジスタを構成する第2導電型の第2不純物領域を形成し、
前記複数の不純物領域のうちの第1導電型の第3不純物領域を、前記半導体基板のアクティブ領域を分離するための分離領域を通して形成することを特徴とする製造方法。 - 前記第1導電型の第1不純物領域および前記第2導電型の第1不純物領域はフォトダイオードを構成することを特徴とする請求項1項に記載の製造方法。
- 前記表面と前記第2導電型の第1不純物領域との間に位置する第1導電型の不純物層を形成することを特徴とする請求項1または2に記載の製造方法。
- 前記複数の不純物領域のうちの第1導電型の第4不純物領域の不純物濃度のピーク位置と前記表面との間に、前記第2導電型の第2不純物領域で構成された前記トランジスタとは閾値の異なるトランジスタを構成する第2導電型の第3不純物領域を形成することを特徴とする請求項1乃至3の何れか1項に記載の半導体装置の製造方法。
- 前記分離領域は前記フォトダイオードと前記トランジスタとの間に位置することを特徴とする請求項2に記載の製造方法。
- 光透過率が互いに異なる複数の領域を含むフォトマスクを用いて、前記半導体基板の上の無機材料からなる膜の上に塗布されたフォトレジストを露光し、
前記フォトレジストを現像して、前記フォトレジストの露光量に依存した互いに異なる膜厚を有する複数の領域を含むレジストパターンを形成し、
前記レジストパターンをマスクとして前記無機材料のエッチングを行い、前記無機材料からなる膜から、異なる膜厚を有する前記複数の領域を含む前記マスクパターンを形成することを特徴とする請求項1乃至5の何れか1項に記載の製造方法。 - 前記マスクパターンは、酸化シリコン又は窒化シリコンからなる請求項1乃至6の何れか1項に記載の製造方法。
- 前記複数の不純物領域の形成において、前記膜厚が互いに異なる複数の領域を通して同時に不純物イオンを注入し、
前記半導体基板に注入された前記第1導電型の不純物イオンを熱拡散することを特徴とする請求項1乃至7の何れか1項に記載の製造方法。 - 前記複数の不純物領域の形成において、前記不純物イオンの注入は少なくとも、第1エネルギーで行われる第1注入と、前記第1エネルギーよりも低いエネルギーで行われる第2注入とを有することを特徴とする請求項1乃至8の何れか1項に記載の製造方法。
- 前記第1注入におけるドーズ量と、前記第2注入におけるドーズ量とは互いに異なることを特徴とする請求項9に記載の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011261009A JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
US13/349,062 US8476153B2 (en) | 2011-02-01 | 2012-01-12 | Method of manufacturing a semiconductor device |
CN201210020142.5A CN102629554B (zh) | 2011-02-01 | 2012-01-29 | 半导体器件的制造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2011020088 | 2011-02-01 | ||
JP2011020088 | 2011-02-01 | ||
JP2011261009A JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2012178543A JP2012178543A (ja) | 2012-09-13 |
JP2012178543A5 JP2012178543A5 (ja) | 2015-01-22 |
JP6004635B2 true JP6004635B2 (ja) | 2016-10-12 |
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JP2011261009A Expired - Fee Related JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
Country Status (3)
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US (1) | US8476153B2 (ja) |
JP (1) | JP6004635B2 (ja) |
CN (1) | CN102629554B (ja) |
Families Citing this family (9)
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CN102881571B (zh) | 2012-09-28 | 2014-11-26 | 京东方科技集团股份有限公司 | 有源层离子注入方法及薄膜晶体管有源层离子注入方法 |
US9012244B2 (en) * | 2012-11-12 | 2015-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to form multiple trenches utilizing a grayscale mask |
KR102170761B1 (ko) * | 2013-07-22 | 2020-10-27 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
KR102255954B1 (ko) * | 2013-10-22 | 2021-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 포토레지스트 두께에 따라 라이팅 빔들의 전달 도즈를 변화시키기 위한 프로세서들을 이용하는 패턴 생성기들, 및 관련 방법들 |
CN103700632B (zh) * | 2013-12-26 | 2016-04-06 | 京东方科技集团股份有限公司 | Cmos晶体管及其制作方法、显示面板和显示装置 |
US10043541B1 (en) | 2015-12-12 | 2018-08-07 | Magnecomp Corporation | Disk drive head stack assembly having height-controlled suspension circuit tail tack |
JP2018107358A (ja) * | 2016-12-27 | 2018-07-05 | キヤノン株式会社 | 撮像装置の製造方法および撮像システム |
CN109411411A (zh) * | 2018-12-07 | 2019-03-01 | 深圳市华星光电半导体显示技术有限公司 | Goa阵列基板的制作方法及液晶显示器 |
CN111524903B (zh) * | 2020-04-23 | 2023-03-28 | 深圳市华星光电半导体显示技术有限公司 | Goa阵列基板及制备方法 |
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JP3341514B2 (ja) * | 1995-02-02 | 2002-11-05 | ソニー株式会社 | 半導体装置の製造方法 |
KR0161389B1 (ko) * | 1995-02-16 | 1999-01-15 | 윤종용 | 마스크 및 이를 사용한 패턴형성방법 |
JPH1126392A (ja) * | 1997-07-01 | 1999-01-29 | Nippon Steel Corp | 半導体装置の製造方法 |
JP2001127168A (ja) * | 1999-10-22 | 2001-05-11 | Nec Corp | 半導体装置及びその製造方法 |
JP2001237326A (ja) * | 2000-02-25 | 2001-08-31 | Dainippon Printing Co Ltd | Mosトランジスターのしきい値電圧制御用のイオン注入方法 |
JP2002231924A (ja) | 2001-01-30 | 2002-08-16 | Sony Corp | 固体撮像素子及びその製造方法 |
JP3754378B2 (ja) * | 2002-02-14 | 2006-03-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP4565799B2 (ja) * | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置 |
WO2005109512A1 (en) * | 2004-05-06 | 2005-11-17 | Canon Kabushiki Kaisha | Photoelectric conversion device and manufacturing method thereof |
JP2006165161A (ja) | 2004-12-06 | 2006-06-22 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2006165143A (ja) | 2004-12-06 | 2006-06-22 | Sony Corp | 固体撮像装置及びその製造方法 |
JP4810831B2 (ja) | 2005-01-14 | 2011-11-09 | ソニー株式会社 | 半導体装置及びその製造方法 |
US7759186B2 (en) * | 2008-09-03 | 2010-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices |
JP5522980B2 (ja) | 2009-06-18 | 2014-06-18 | キヤノン株式会社 | 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法 |
-
2011
- 2011-11-29 JP JP2011261009A patent/JP6004635B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-12 US US13/349,062 patent/US8476153B2/en not_active Expired - Fee Related
- 2012-01-29 CN CN201210020142.5A patent/CN102629554B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN102629554A (zh) | 2012-08-08 |
US8476153B2 (en) | 2013-07-02 |
CN102629554B (zh) | 2015-04-08 |
JP2012178543A (ja) | 2012-09-13 |
US20120196429A1 (en) | 2012-08-02 |
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