JP5975121B2 - 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法 - Google Patents
抵抗変化素子、半導体装置、および抵抗変化素子の形成方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/08—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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Description
以下に、本発明の実施形態を詳しく説明する。
本発明の実施形態に係る半導体装置について図面を用いて説明する。図1は、本実施形態の半導体装置の一構成例を模式的に示した断面図である。
本実施形態の抵抗変化素子の構成を説明する。図4は本実施形態の抵抗変化素子の一構成例を示す断面図である。
本実施形態は、本発明の抵抗変化素子を半導体装置の多層配線内部に形成した装置である。本実施形態に係る半導体装置について図面を用いて説明する。
本実施形態は、第3の実施形態で説明した半導体装置の製造方法の一例を示すものである。図6に示した半導体装置の製造方法を、図面を参照して説明する。図7Aから図10Bは、図6に示した半導体装置の製造方法を模式的に示す工程断面図である。
本発明の他の実施形態の抵抗変化素子は、第1の電極としてルテニウム(Ru)、抵抗変化層としてTiO2、バッファ層として本発明による絶縁膜、および、第2の電極としてRuが順に積層された構造である。本実施形態の抵抗変化素子の構成について説明する。なお、本実施形態の抵抗変化素子は、図3に示した構造の多孔質膜102を抵抗変化層に置き換え、変質層117をバッファ層に置き換えた構造であり、本実施形態の抵抗変化素子の断面を図に示すことを省略する。以下では、抵抗変化素子の形成方法を説明することで、図3に示した構造と異なる点を説明する。
102 多孔質膜
103、114 第2の電極
112 酸化チタン膜
113 イオン伝導層
500 メモリセルアレイ
530 メモリセル
531 抵抗変化素子
533、543 トランジスタ
Claims (11)
- 下部電極となる第1の電極および上部電極となる第2の電極と、
前記第1の電極および前記第2の電極の間に設けられた、少なくとも酸素および炭素を含むイオン伝導層と、
を有し、
前記第1の電極は前記イオン伝導層へ伝導可能な金属を含み、
前記イオン伝導層は、前記酸素および前記炭素の他に少なくともシリコンを元素として含む多孔質膜であり、
前記イオン伝導層は、6員環または8員環からなるシロキサン構造を含む膜であり、
前記イオン伝導層は、少なくとも不飽和炭化水素基を含む膜であり、
前記シロキサン構造は、以下に示す化学式
R1はビニル基であって、
R2が、水素、エチル基、プロピル基、およびイソプロピル基のうちいずれかである、抵抗変化素子。
- 前記イオン伝導層は、比誘電率が2.5以上3.5以下であり、単一ピークの空孔径分布を有する請求項1に記載の抵抗変化素子。
- 前記第1の電極の材料が銅であり、前記第2の電極の材料がルテニウムである請求項1または2に記載の抵抗変化素子。
- 前記第1の電極と前記イオン伝導層との間にバルブメタルの酸化物が設けられ、該バルブメタルは酸化物の標準自由エネルギーが前記第1の電極の材料に比べて負に大きい、請求項1から3のいずれか1項に記載の抵抗変化素子。
- 前記第1の電極は銅を主成分とし、前記バルブメタルはチタン、アルミニウム、タンタル、ニオブ、ハフニウム、ジルコニウム、亜鉛、タングステン、ビスマス、アンチモンのうち、少なくとも一つを含む、請求項4に記載の抵抗変化素子。
- 請求項1から5のいずれか1項に記載の抵抗変化素子を有する半導体装置。
- 半導体基板上の多層配線層の内部に前記抵抗変化素子が設けられ、
前記多層配線層は、少なくとも、前記下部電極を兼ねる配線と、前記上部電極と電気的に接続されたプラグと、を備え、
前記下部電極を兼ねる配線が前記イオン伝導層へイオン伝導可能な金属を含むことを特徴とする請求項6に記載の半導体装置。 - 第1の電極を形成する工程と、
前記第1の電極上に、少なくともシリコンおよび酸素を骨格とした有機シリカ化合物の蒸気を不活性ガスで希釈した蒸気を用いて、プラズマCVD法により絶縁膜を形成する工程と、
前記絶縁膜上に第2の電極を形成する工程と、
を有し、
前記第1の電極を形成する工程において、前記絶縁膜へ伝導可能な金属を用いて該第1の電極を形成し、
前記有機シリカ化合物は、シリコンおよび酸素を骨格とし、側鎖に少なくとも一つの不飽和炭化水素基が結合された環状有機シリカ化合物であり、
前記有機シリカ化合物は、以下に示す化学式
R1はビニル基であって、R2が、水素、エチル基、プロピル基、およびイソプロピル基のうちいずれかである、抵抗変化素子の形成方法。
- 前記絶縁膜を形成する工程において、酸化ガスを用いないで前記絶縁膜を形成することを特徴とする請求項8に記載の抵抗変化素子の形成方法。
- 前記第1の電極の材料が銅であり、前記第2の電極の材料がルテニウムであることを特徴とする請求項8に記載の抵抗変化素子の形成方法。
- 前記絶縁膜を形成する工程と前記第2の電極を形成する工程との間に、不活性ガスプラズマを該絶縁膜の表面に照射させる工程をさらに有する請求項8から10のいずれか1項に記載の抵抗変化素子の形成方法。
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