JP5673523B2 - 基板処理方法、基板処理装置及び記憶媒体 - Google Patents

基板処理方法、基板処理装置及び記憶媒体 Download PDF

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Publication number: JP5673523B2
Authority: JP; Japan
Prior art keywords: substrate; solvent; resist pattern; wafer; processing
Prior art date: 2011-12-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2011289721A

Other languages

English (en)

Japanese (ja)

Other versions

JP2013140833A (ja

Inventor

小林　真二

真二小林

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-12-28

Filing date

2011-12-28

Publication date

2015-02-18

2011-12-28 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2011-12-28 Priority to JP2011289721A priority Critical patent/JP5673523B2/ja

2012-12-27 Priority to KR1020120154364A priority patent/KR101853141B1/ko

2013-07-18 Publication of JP2013140833A publication Critical patent/JP2013140833A/ja

2015-02-18 Application granted granted Critical

2015-02-18 Publication of JP5673523B2 publication Critical patent/JP5673523B2/ja

Status Active legal-status Critical Current

2031-12-28 Anticipated expiration legal-status Critical

Links

238000012545 processing Methods 0.000 title claims description 140
239000000758 substrate Substances 0.000 title claims description 94
238000003672 processing method Methods 0.000 title claims description 15
238000003860 storage Methods 0.000 title claims description 7
239000002904 solvent Substances 0.000 claims description 78
238000001816 cooling Methods 0.000 claims description 61
238000010438 heat treatment Methods 0.000 claims description 50
238000012546 transfer Methods 0.000 claims description 29
230000008961 swelling Effects 0.000 claims description 11
230000003028 elevating effect Effects 0.000 claims description 10
238000005192 partition Methods 0.000 claims description 6
238000004590 computer program Methods 0.000 claims description 4
230000003746 surface roughness Effects 0.000 claims description 4
238000000034 method Methods 0.000 description 80
230000008569 process Effects 0.000 description 69
230000007246 mechanism Effects 0.000 description 20
LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 20
238000004891 communication Methods 0.000 description 12
230000000694 effects Effects 0.000 description 11
238000009499 grossing Methods 0.000 description 10
230000009471 action Effects 0.000 description 9
238000004381 surface treatment Methods 0.000 description 9
IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
239000003960 organic solvent Substances 0.000 description 4
238000010926 purge Methods 0.000 description 4
RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
230000004048 modification Effects 0.000 description 3
238000012986 modification Methods 0.000 description 3
239000002344 surface layer Substances 0.000 description 3
ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
230000006872 improvement Effects 0.000 description 2
RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
230000008859 change Effects 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000004090 dissolution Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
229940116333 ethyl lactate Drugs 0.000 description 1
FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
239000012466 permeate Substances 0.000 description 1
UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
239000010453 quartz Substances 0.000 description 1
238000003303 reheating Methods 0.000 description 1
239000013557 residual solvent Substances 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
-1 γ-butyllactone Chemical compound 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking

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Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)

JP2011289721A 2011-12-28 2011-12-28 基板処理方法、基板処理装置及び記憶媒体 Active JP5673523B2 (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP2011289721A JP5673523B2 (ja)	2011-12-28	2011-12-28	基板処理方法、基板処理装置及び記憶媒体
KR1020120154364A KR101853141B1 (ko)	2011-12-28	2012-12-27	기판 처리 방법, 기판 처리 장치 및 기억 매체

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2011289721A JP5673523B2 (ja)	2011-12-28	2011-12-28	基板処理方法、基板処理装置及び記憶媒体

Publications (2)

Publication Number	Publication Date
JP2013140833A JP2013140833A (ja)	2013-07-18
JP5673523B2 true JP5673523B2 (ja)	2015-02-18

Family

ID=48990235

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2011289721A Active JP5673523B2 (ja)	2011-12-28	2011-12-28	基板処理方法、基板処理装置及び記憶媒体

Country Status (2)

Country	Link
JP (1)	JP5673523B2 (ko)
KR (1)	KR101853141B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI697974B (zh)	2015-04-29	2020-07-01	美商應用材料股份有限公司	用於校正基板變形的方法與設備
WO2016176566A1 (en) *	2015-04-29	2016-11-03	Applied Materials, Inc.	Methods and apparatus for correcting substrate deformity
US10325790B2 (en)	2016-04-29	2019-06-18	Applied Materials, Inc.	Methods and apparatus for correcting substrate deformity
CN106054541B (zh) *	2016-08-12	2019-09-20	武汉华星光电技术有限公司	预烘烤设备
JP6987507B2 (ja) *	2017-02-14	2022-01-05	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法及びその装置
KR102041318B1 (ko) *	2017-10-17	2019-11-06	세메스 주식회사	기판 처리 방법 및 장치

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3598462B2 (ja) *	2000-05-09	2004-12-08	東京エレクトロン株式会社	乾燥方法及び乾燥装置
JP4328667B2 (ja) *	2003-06-06	2009-09-09	東京エレクトロン株式会社	基板の処理膜の表面荒れを改善する方法及び基板の処理装置
JP4967004B2 (ja) *	2009-09-14	2012-07-04	東京エレクトロン株式会社	レジスト塗布現像装置およびレジスト塗布現像方法

2011
- 2011-12-28 JP JP2011289721A patent/JP5673523B2/ja active Active
2012
- 2012-12-27 KR KR1020120154364A patent/KR101853141B1/ko active IP Right Grant

Also Published As

Publication number	Publication date
KR20130076753A (ko)	2013-07-08
JP2013140833A (ja)	2013-07-18
KR101853141B1 (ko)	2018-04-27

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2014-12-02	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141202
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