JP5465828B2 - 基板処理装置及び半導体デバイスの製造方法 - Google Patents
基板処理装置及び半導体デバイスの製造方法 Download PDFInfo
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- JP5465828B2 JP5465828B2 JP2007257768A JP2007257768A JP5465828B2 JP 5465828 B2 JP5465828 B2 JP 5465828B2 JP 2007257768 A JP2007257768 A JP 2007257768A JP 2007257768 A JP2007257768 A JP 2007257768A JP 5465828 B2 JP5465828 B2 JP 5465828B2
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- 239000000758 substrate Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000004065 semiconductor Substances 0.000 title description 15
- 238000010438 heat treatment Methods 0.000 claims description 63
- 239000011810 insulating material Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- 229910052736 halogen Inorganic materials 0.000 description 23
- 150000002367 halogens Chemical class 0.000 description 23
- 238000001816 cooling Methods 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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Description
又、本発明は以下の実施の態様を含む。
2 加熱部
4 発熱線
6 垂直端部
7 絶縁端子部
17 ランプ加熱ユニット
18 サセプタ
37 筒状電極
38 プラズマ生成領域
43 筒状磁石
55 反射ブロック
56 ランプ収納溝
57 空冷空間
58 冷却管
59 端部カバー
60 絶縁材
64 冷却空気吐出ノズル
Claims (3)
- 基板保持具を有する処理室と、前記基板保持具と対峙し、前記処理室の天井面に配された窓を介して設けられるランプ加熱ユニットとを有し、該ランプ加熱ユニットのランプが基板に対向する加熱部と該加熱部に連続する端部を具備し、該端部は該端部からの輻射熱を反射する端部カバーで覆われ、前記端部と前記端部カバー間の間隙は絶縁材によって封止される基板処理装置。
- 前記ランプ加熱ユニットは、前記処理室側にランプ収納溝が設けられた反射ブロックを有し、前記加熱部は前記ランプ収納溝に配され、前記端部は前記反射ブロックを貫通して該反射ブロックの上方に突出される請求項1の基板処理装置。
- 基板保持具を有する処理室に基板が搬送される工程と、前記基板保持具と対峙し、前記処理室の天井面に配された窓を介して設けられるランプ加熱ユニットであって、該ランプ加熱ユニットのランプが基板に対向する加熱部と該加熱部に連続する端部を具備し、該端部は該端部からの輻射熱を反射する端部カバーで覆われ、前記端部と前記端部カバー間の間隙が絶縁材によって封止される前記ランプ加熱ユニットによって基板が加熱される工程とを有する半導体デバイスの製造方法。
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JP2007257768A JP5465828B2 (ja) | 2007-10-01 | 2007-10-01 | 基板処理装置及び半導体デバイスの製造方法 |
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JP2007257768A JP5465828B2 (ja) | 2007-10-01 | 2007-10-01 | 基板処理装置及び半導体デバイスの製造方法 |
Publications (3)
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JP2009088348A JP2009088348A (ja) | 2009-04-23 |
JP2009088348A5 JP2009088348A5 (ja) | 2010-11-18 |
JP5465828B2 true JP5465828B2 (ja) | 2014-04-09 |
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JP2007257768A Active JP5465828B2 (ja) | 2007-10-01 | 2007-10-01 | 基板処理装置及び半導体デバイスの製造方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6012933B2 (ja) * | 2011-04-26 | 2016-10-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および基板処理方法 |
KR101331420B1 (ko) | 2011-03-04 | 2013-11-21 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
KR20210126092A (ko) * | 2019-03-20 | 2021-10-19 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 처리 용기, 반사체 및 반도체 장치의 제조 방법 |
KR102656121B1 (ko) * | 2021-12-24 | 2024-04-12 | (주)보부하이테크 | 용접 결함 및 크랙 발생을 개선한 히터 구조 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154618A (ja) * | 1985-12-26 | 1987-07-09 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
JPH0532956Y2 (ja) * | 1987-09-24 | 1993-08-23 | ||
JPH08292667A (ja) * | 1995-04-21 | 1996-11-05 | Tec Corp | 加熱定着装置 |
JP2000114196A (ja) * | 1998-08-06 | 2000-04-21 | Ushio Inc | 光照射式加熱装置の冷却構造 |
JP3733811B2 (ja) * | 1999-02-16 | 2006-01-11 | ウシオ電機株式会社 | 光照射式加熱処理装置 |
JP4004765B2 (ja) * | 2000-10-10 | 2007-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
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- 2007-10-01 JP JP2007257768A patent/JP5465828B2/ja active Active
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