JP5227425B2 - ドープされた有機半導体層の製造方法 - Google Patents
ドープされた有機半導体層の製造方法 Download PDFInfo
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- JP5227425B2 JP5227425B2 JP2010547953A JP2010547953A JP5227425B2 JP 5227425 B2 JP5227425 B2 JP 5227425B2 JP 2010547953 A JP2010547953 A JP 2010547953A JP 2010547953 A JP2010547953 A JP 2010547953A JP 5227425 B2 JP5227425 B2 JP 5227425B2
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- dopant
- matrix material
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- metal
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (11)
- 次の方法工程:
A) マトリックス材料を準備する工程、
B) ドーパント錯体を準備する工程であって、前記ドーパント錯体はドーパントと少なくとも1つの配位子とを有し、前記ドーパントは金属及び/又は金属クラスターである工程、
及び
C) 前記マトリックス材料と、前記ドーパント錯体とを同時に基板上に蒸着させる工程を有し、
前記方法工程C)において前記ドーパント錯体は分解され、前記ドーパントが前記マトリックス材料内へ埋め込まれる、ドープされた有機半導体層の製造方法。 - 前記方法工程A)において、フェナントロリン誘導体、イミダゾール誘導体、トリアゾール誘導体、オキサジアゾール誘導体、フェニル含有化合物、縮合された芳香族を有する化合物、カルバゾール含有化合物、フルオレン誘導体、スピロフルオレン誘導体及びピリジン含有化合物を有するグループから選択されたマトリックス材料を準備する、請求項1記載の方法。
- 前記方法工程C)において、ドーパント錯体をドーパントと少なくとも1つの配位子とに分解する、請求項1又は2記載の方法。
- 前記金属及び/又は金属クラスターが、遷移金属、ランタノイド及び主族の金属を有するグループから選択される、請求項1記載の方法。
- 少なくとも1つの配位子は、カルボニル配位子、ホスフィン配位子、シクロペンタジエニル配位子及びアレーン配位子を有するグループから選択される、請求項3記載の方法。
- 方法工程C)において、前記ドーパント錯体を連続的に蒸発させかつ分解する、請求項1から5までのいずれか1項記載の方法。
- 方法工程C)において前記ドーパント錯体を、熱的加熱、電磁的照射、ラジオ波を用いた照射及びマイクロ波照射から選択される方法により分解する、請求項1から6までのいずれか1項記載の方法。
- 前記ドーパント錯体の分解を気相中で行う、請求項7記載の方法。
- 方法工程C)において、前記ドーパントを前記マトリックス材料中へ埋め込む際に、前記マトリックス材料と錯化させる、請求項1から8までのいずれか1項記載の方法。
- 前記ドーパントは前記マトリックス材料をn型にドープする、請求項1から9までのいずれか1項記載の方法。
- 基板と、
作動中に第1の電荷の電荷キャリアを提供する前記基板上の第1の電極と、
第1の電荷の電荷キャリアを輸送する第1の電荷輸送層と、
前記第1の電荷輸送層上の少なくとも1つの発光層と、
作動中に第2の電荷の電荷キャリアを提供する前記少なくとも1つの発光層上の第2の電極とを有し、
前記第1の電荷輸送層は、請求項1から10までのいずれか1項記載の方法により製造される、オプトエレクトロニクス装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008011185.6 | 2008-02-27 | ||
DE102008011185A DE102008011185A1 (de) | 2008-02-27 | 2008-02-27 | Verfahren zur Herstellung einer dotierten organischen halbleitenden Schicht |
PCT/DE2009/000280 WO2009106068A1 (de) | 2008-02-27 | 2009-02-25 | Verfahren zur herstellung einer dotierten organischen halbleitenden schicht |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011513902A JP2011513902A (ja) | 2011-04-28 |
JP2011513902A5 JP2011513902A5 (ja) | 2012-04-12 |
JP5227425B2 true JP5227425B2 (ja) | 2013-07-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010547953A Expired - Fee Related JP5227425B2 (ja) | 2008-02-27 | 2009-02-25 | ドープされた有機半導体層の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8841153B2 (ja) |
EP (1) | EP2248201A1 (ja) |
JP (1) | JP5227425B2 (ja) |
KR (1) | KR101541941B1 (ja) |
CN (1) | CN101965653B (ja) |
DE (1) | DE102008011185A1 (ja) |
WO (1) | WO2009106068A1 (ja) |
Families Citing this family (24)
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JP6168410B2 (ja) * | 2012-04-27 | 2017-07-26 | 株式会社Joled | 有機el素子、およびそれを備える有機elパネル、有機el発光装置、有機el表示装置 |
DE102012217587A1 (de) | 2012-09-27 | 2014-03-27 | Siemens Aktiengesellschaft | Salze des Cyclopentadiens als n-Dotierstoffe für die organische Elektronik |
CN102924524B (zh) * | 2012-10-29 | 2015-02-04 | 安徽大学 | 一种具有活体细胞显影功能的锰配合物双光子吸收材料及其合成方法 |
US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
ES2673573T3 (es) | 2013-12-23 | 2018-06-22 | Novaled Gmbh | Material semiconductor con dopaje N que comprende una matriz de óxido de fosfina y un metal dopante |
US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
US10490475B2 (en) | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
EP3109915B1 (en) | 2015-06-23 | 2021-07-21 | Novaled GmbH | Organic light emitting device comprising polar matrix and metal dopant |
EP3109916B1 (en) | 2015-06-23 | 2021-08-25 | Novaled GmbH | Organic light emitting device comprising polar matrix, metal dopant and silver cathode |
JP2018527740A (ja) | 2015-06-23 | 2018-09-20 | ノヴァレッド ゲーエムベーハー | 極性マトリクスおよび金属ドーパントを含んでいる有機発光デバイス |
EP3109919B1 (en) | 2015-06-23 | 2021-06-23 | Novaled GmbH | N-doped semiconducting material comprising polar matrix and metal dopant |
DE102015116389A1 (de) * | 2015-09-28 | 2017-03-30 | Osram Oled Gmbh | Organisches elektronisches Bauteil mit Ladungsträgergenerationsschicht und Verwendung eines Zinkkomplexes als p-Dotierstoff in Ladungsträgergenerationsschichten |
EP3168894B8 (en) * | 2015-11-10 | 2023-07-26 | Novaled GmbH | N-doped semiconducting material comprising two metal dopants |
CN107464884B (zh) * | 2016-06-06 | 2019-07-12 | 清华大学 | 一种叠层有机电致发光器件 |
CN107464885B (zh) * | 2016-06-06 | 2019-01-18 | 清华大学 | 一种有机电致发光器件 |
CN106521423A (zh) | 2016-11-28 | 2017-03-22 | 上海天马有机发光显示技术有限公司 | 一种真空蒸镀装置、方法及有机发光显示面板 |
CN108269931B (zh) * | 2016-12-30 | 2020-01-24 | 昆山国显光电有限公司 | 一种有机电致发光器件及其制备方法 |
CN108269936B (zh) * | 2016-12-30 | 2020-02-11 | 昆山国显光电有限公司 | 一种电极及其制备方法和应用 |
CN109994651B (zh) * | 2017-12-29 | 2020-12-25 | 昆山国显光电有限公司 | 一种有机电致发光器件及其制备方法 |
CN109524571B (zh) * | 2018-09-28 | 2021-05-14 | 清华大学 | 基于惰性金属实现电子传输材料n型掺杂的方法及其应用 |
KR102350862B1 (ko) | 2020-08-26 | 2022-01-14 | 동국대학교 산학협력단 | 공액 고분자 전해질이 도핑된 유기 반도체 및 이의 제조 방법 |
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-
2008
- 2008-02-27 DE DE102008011185A patent/DE102008011185A1/de active Pending
-
2009
- 2009-02-25 US US12/919,989 patent/US8841153B2/en active Active
- 2009-02-25 JP JP2010547953A patent/JP5227425B2/ja not_active Expired - Fee Related
- 2009-02-25 EP EP09715308A patent/EP2248201A1/de not_active Ceased
- 2009-02-25 CN CN200980106931.7A patent/CN101965653B/zh active Active
- 2009-02-25 WO PCT/DE2009/000280 patent/WO2009106068A1/de active Application Filing
- 2009-02-25 KR KR1020107021471A patent/KR101541941B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20100118148A (ko) | 2010-11-04 |
EP2248201A1 (de) | 2010-11-10 |
WO2009106068A1 (de) | 2009-09-03 |
US8841153B2 (en) | 2014-09-23 |
KR101541941B1 (ko) | 2015-08-05 |
CN101965653B (zh) | 2017-04-05 |
CN101965653A (zh) | 2011-02-02 |
JP2011513902A (ja) | 2011-04-28 |
US20110124141A1 (en) | 2011-05-26 |
DE102008011185A1 (de) | 2009-09-03 |
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