JP5072208B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number: JP5072208B2
Authority: JP; Japan
Prior art keywords: layer; thin film; substrate; integrated circuit; semiconductor device
Prior art date: 2004-09-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2005275070A

Other languages

English (en)

Japanese (ja)

Other versions

JP2006121060A (ja

JP2006121060A5 (fr

Inventor

舜平山崎

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-09-24

Filing date

2005-09-22

Publication date

2012-11-14

2005-09-22 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

2005-09-22 Priority to JP2005275070A priority Critical patent/JP5072208B2/ja

2006-05-11 Publication of JP2006121060A publication Critical patent/JP2006121060A/ja

2008-11-06 Publication of JP2006121060A5 publication Critical patent/JP2006121060A5/ja

2012-11-14 Application granted granted Critical

2012-11-14 Publication of JP5072208B2 publication Critical patent/JP5072208B2/ja

Status Expired - Fee Related legal-status Critical Current

2025-09-22 Anticipated expiration legal-status Critical

Links

Images

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Solid State Image Pick-Up Elements (AREA)
Thin Film Transistor (AREA)

JP2005275070A 2004-09-24 2005-09-22 半導体装置の作製方法 Expired - Fee Related JP5072208B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2005275070A JP5072208B2 (ja)	2004-09-24	2005-09-22	半導体装置の作製方法

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2004278548		2004-09-24
JP2004278548		2004-09-24
JP2005275070A JP5072208B2 (ja)	2004-09-24	2005-09-22	半導体装置の作製方法

Publications (3)

Publication Number	Publication Date
JP2006121060A JP2006121060A (ja)	2006-05-11
JP2006121060A5 JP2006121060A5 (fr)	2008-11-06
JP5072208B2 true JP5072208B2 (ja)	2012-11-14

Family

ID=36538601

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2005275070A Expired - Fee Related JP5072208B2 (ja)	2004-09-24	2005-09-22	半導体装置の作製方法

Country Status (1)

Country	Link
JP (1)	JP5072208B2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN101385039B (zh) *	2006-03-15	2012-03-21	株式会社半导体能源研究所	半导体器件
JP5052079B2 (ja) *	2006-09-08	2012-10-17	株式会社半導体エネルギー研究所	センサ装置及びそれを有する容器類
JP5210613B2 (ja)	2006-12-27	2013-06-12	株式会社半導体エネルギー研究所	半導体装置
JP5179858B2 (ja)	2007-01-06	2013-04-10	株式会社半導体エネルギー研究所	半導体装置
US8816484B2 (en)	2007-02-09	2014-08-26	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP2008217776A (ja) *	2007-02-09	2008-09-18	Semiconductor Energy Lab Co Ltd	半導体装置
EP1970951A3 (fr) *	2007-03-13	2009-05-06	Semiconductor Energy Laboratory Co., Ltd.	Dispositif de semi-conducteurs et son procédé de fabrication
US7960262B2 (en) *	2007-05-18	2011-06-14	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device by applying laser beam to single-crystal semiconductor layer and non-single-crystal semiconductor layer through cap film
EP2001047A1 (fr) *	2007-06-07	2008-12-10	Semiconductor Energy Laboratory Co, Ltd.	Dispositif semi-conducteur
JP5072709B2 (ja) *	2008-05-20	2012-11-14	京セラドキュメントソリューションズ株式会社	画像形成装置及び消耗品ユニット
JP5586920B2 (ja) *	2008-11-20	2014-09-10	株式会社半導体エネルギー研究所	フレキシブル半導体装置の作製方法
JP6580863B2 (ja)	2014-05-22	2019-09-25	株式会社半導体エネルギー研究所	半導体装置、健康管理システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4748859B2 (ja) *	2000-01-17	2011-08-17	株式会社半導体エネルギー研究所	発光装置の作製方法
JP2002353235A (ja) *	2001-05-23	2002-12-06	Matsushita Electric Ind Co Ltd	アクティブマトリクス基板とそれを用いた表示装置およびその製造方法
JP4244120B2 (ja) *	2001-06-20	2009-03-25	株式会社半導体エネルギー研究所	発光装置及びその作製方法
JP3972825B2 (ja) *	2003-01-28	2007-09-05	セイコーエプソン株式会社	アクティブマトリクス型表示装置の製造方法

2005
- 2005-09-22 JP JP2005275070A patent/JP5072208B2/ja not_active Expired - Fee Related

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Publication number	Publication date
JP2006121060A (ja)	2006-05-11

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Publication	Publication Date	Title
JP5072208B2 (ja)	2012-11-14	半導体装置の作製方法
US7368318B2 (en)	2008-05-06	Semiconductor device and method for manufacturing the same, and electric appliance
US11317806B2 (en)	2022-05-03	Wireless sensor device
JP4942998B2 (ja)	2012-05-30	半導体装置及び半導体装置の作製方法
TWI411062B (zh)	2013-10-01	半導體裝置製造方法以及半導體裝置和電子裝置
US7482248B2 (en)	2009-01-27	Manufacturing method of semiconductor device
US8716834B2 (en)	2014-05-06	Semiconductor device including antenna
KR101416876B1 (ko)	2014-07-08	반도체 장치 및 반도체 장치의 제조방법
JP5523593B2 (ja)	2014-06-18	半導体装置
US20080076974A1 (en)	2008-03-27	Biological information detection sensor device
US20110291816A1 (en)	2011-12-01	Semiconductor device
JP5296360B2 (ja)	2013-09-25	半導体装置およびその作製方法
JP5072217B2 (ja)	2012-11-14	半導体装置の作製方法
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JP4749102B2 (ja)	2011-08-17	半導体装置の作製方法
JP4912586B2 (ja)	2012-04-11	薄膜集積回路装置の作製方法