JP5070166B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5070166B2 JP5070166B2 JP2008238910A JP2008238910A JP5070166B2 JP 5070166 B2 JP5070166 B2 JP 5070166B2 JP 2008238910 A JP2008238910 A JP 2008238910A JP 2008238910 A JP2008238910 A JP 2008238910A JP 5070166 B2 JP5070166 B2 JP 5070166B2
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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Description
た影響で半導体や絶縁体が劣化し、半導体素子が所期の特性を示さなくなることがある。したがって、静電気による放電が起こると、半導体素子が破壊される、または特性が劣化した影響で半導体素子を用いた集積回路自体が正常に動かなくなるおそれがある。
荷が濡れた面に拡散するので、剥離によって現れた面の電位が放電を生ずるほど高くなることを回避することができる。すなわち、本発明により、剥離帯電による放電をなくすことができる。
して形成した金属膜または合金膜の表面を酸化させる。酸化させる方法には、熱酸化する方法、酸素またはN2Oプラズマで表面を処理する方法、オゾン水等の酸化力の強い溶液で表面を処理する方法などがある。また別の方法としては、素子形成層11を形成したとき、素子形成層11と剥離層12の界面に酸化物が形成されるようにする方法がある。例えば、スパッタ法でシリコン酸化物を成膜すると、金属膜または合金膜表面にシリコン酸化物が堆積するとき、その表面を酸化することができる。なお、金属膜または合金膜を酸化する代わりに、プラズマ処理や熱処理によって窒化してもよい。
の可撓性基板19は必要に応じて設ければよい。以上の作製方法により、図7に示す素子形成層11を有する可撓性の半導体装置を形成することができる。
向の基板10の一辺の長さよりも長くし、液体保持手段21の端部が基板10上に載らないようにするのが望ましい。
タリング装置でタングステンターゲットを用いて、厚さ50nm形成した。N2Oのプラズマを発生させて、タングステン層101bの表面をプラズマ処理し、表面を酸化させて、タングステン酸化物を形成した。このプラズマ処理により、剥離層101と素子形成層102の界面であるタングステン酸化物で剥離が生じるようになる。また、剥離層101の下層の酸化窒化シリコン層101aは、タングステン層101bをスパッタ法で形成しているとき、基板100(例えば、ガラス基板)から不純物が拡散しないようにするためのバリア層である。バリア層には、酸化シリコンや窒化シリコンなど他の無機材料からなる絶縁膜を用いることができる。
方の表面に厚さ50ミクロンの熱硬化性の樹脂層が設けられている。熱硬化の樹脂層は、熱で硬化する前は粘着層として機能し、その表面はセパレートフィルム112で保護されている。加熱剥離フィルム111を、熱硬化性の樹脂層により素子形成層102に固定するために、図12に示すように、セパレートフィルム112の一部を除去した。そのためセパレートフィルム112にUVレーザー光を照射して、素子形成層102に形成した溝110と同様の切れ目を入れて、切れ目の内側のセパレートフィルム112を剥離した。
Cタグなどの最終製品も含むものである。
子形成層102の剥離した下面に、プラスチック製のピンセットを挿入し、図14に示すように剥離層101上面と素子形成層102の下面の間に隙間115を生じさせた。本実施例では、この工程は不要である。
うに、容器140の液体116の量を調節することが好ましい。これは、加熱剥離フィルム111が液体116に触れていると、ローラ118に加熱剥離フィルム111が貼り付きにくくなるからである。
産時期、使用時期、賞味期限、取扱説明、商品に関する知的財産情報等が記憶されている。
に入力される信号などを伝送するための配線であり、外部入力端子となるFPC(フレキシブルプリントサーキット)208が接続される。なお、本発明の液晶モジュールには、FPC208のみを取り付けた形態と、FPC208およびPWB(プリント配線基板)双方を取り付けた形態、双方を含む。
回路303に含まれる薄膜トランジスタ308と、画素部302に含まれる薄膜トランジスタ310のみ図示されている。画素部302は発光素子311を有し、発光素子311は、薄膜トランジスタ310と電気的に接続されている。
ン装置の操作は、筐体に組みこまれたスイッチ、または別体のリモコン操作機406により行うことが可能である。このリモコン装置にも出力する情報を表示する表示部407を設けることができる。
合で、それぞれ、引っ張り力を測定した。なお、純水の供給は、試料を試験機に取り付けた後、剥離部分にスポイトで純水を滴下することで行った。
11 素子形成層
12 剥離層
13 支持基材
14 支持基材
15 液体
17 剥離の先端部分
18 第1の可撓性基板
19 第2の可撓性基板
21 液体保持手段
22 ローラ
100 基板
101 剥離層
101a 酸化窒化シリコン層
101b タングステン層
102 素子形成層
103 絶縁膜
103a 酸化窒化シリコン層
103b 酸化窒化シリコン層
104 nチャネル型TFT
105 pチャネル型TFT
106 アンテナ
107 絶縁膜
108 樹脂層
110 溝
111 加熱剥離フィルム
112 セパレートフィルム
113 加熱剥離フィルム
114 ローラ
115 隙間
116 液体
117 スポイト
118 ローラ
119 部分
121 ラミネートフィルム
122 ラミネートフィルム
123 フィルム
130 噴霧手段
140 容器
160 ラベル台紙
161 IDラベル
162 インレット
163 ボックス
165 IDタグ
166 IDカード
167 無記名債券
190 素子形成層
200 第1の可撓性基板
201 信号線駆動回路
202 画素部
203 走査線駆動回路
204 第2の可撓性基板
205 シール材
208 フレキシブルプリントサーキット
209 下地膜
210 配線
211 nチャネル型薄膜トランジスタ
212 pチャネル型薄膜トランジスタ
213 スイッチング用薄膜トランジスタ
214 容量素子
221 層間絶縁膜
222 画素電極
223 保護膜
224 配向膜
230 第2の可撓性基板
231 カラーフィルタ
232 ブラックマトリクス(BM)
233 対向電極
234 配向膜
240 液晶
300 素子形成層
301 第1の可撓性基板
302 画素部
303 信号線駆動回路
304 走査線駆動回路
305 シール材
306 第2の可撓性基板
307 充填材
308 薄膜トランジスタ
310 薄膜トランジスタ
311 発光素子
314 引き回し配線
315a 引き回し配線
315b 引き回し配線
316 接続端子
318 フレキシブルプリントサーキット(FPC)
319 異方性導電膜
401 筐体
402 液晶モジュール
403 主画面
404 モデム
405 受信機
406 リモコン操作機
407 表示部
408 サブ画面
409 スピーカー部
410 筐体
411 表示部
412 キーボード部
413 スピーカー部
421 本体
422 表示部
424 記憶媒体
425 操作スイッチ
426 アンテナ
500 ガラス基板
501 酸化窒化シリコン膜
502 タングステン膜
503 酸化窒化シリコン膜
504 酸化窒化シリコン膜
505 酸化窒化シリコン膜
506 非晶質シリコン膜
507 酸化窒化シリコン膜
508 酸化窒化シリコン膜
510 溝
Claims (12)
- 基板上に剥離層を形成し、
前記剥離層上に、半導体素子を含む素子形成層を形成し、
前記素子形成層上に支持基材を設け、
前記剥離層と前記素子形成層との界面、前記基板と前記剥離層との界面、または前記剥離層の内部の少なくともいずれか一つで剥離を生じさせ、
前記剥離によって生じた隙間に液体保持手段を挿入し、
前記液体保持手段に含ませた液体がローラによって押し出されることによって、前記剥離によって現れた前記素子形成層側の面を前記液体で濡らし、
前記素子形成層と前記支持基材とを前記ローラを用いて巻き取ることにより、前記基板から前記素子形成層を分離することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記剥離によって生じた隙間に前記液体を含ませた前記液体保持手段を挿入することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記液体保持手段を前記隙間に挿入した後に、前記液体保持手段に前記液体を含ませることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記素子形成層から前記支持基材を分離することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記支持基材は、前記支持基材の一部に設けられたフィルムと前記素子形成層とが前記基板と前記支持基材とに挟まれ、且つ、前記フィルムと前記素子形成層とが重ならないように、前記素子形成層上に設けられ、
前記基板から前記素子形成層を分離した後、前記フィルムと前記支持基材とを、前記素子形成層から分離することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項5のいずれか一項において、
前記素子形成層の分離の後、前記素子形成層に可撓性基板を固定することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一項において、
前記液体は極性液体であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一項において、
前記液体は純水であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一項において、
前記剥離層は金属を含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一項において、
前記支持基材はプラスチックを含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項10のいずれか一項において、
前記支持基材は可撓性フィルムであることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項11のいずれか一項において、
前記半導体素子により集積回路を形成することを特徴とする半導体装置の作製方法。
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US9526129B2 (en) | 2011-01-14 | 2016-12-20 | 3Sae Technologies, Inc. | Thermal mechanical diffusion system and method |
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