JP4545433B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP4545433B2 JP4545433B2 JP2003434860A JP2003434860A JP4545433B2 JP 4545433 B2 JP4545433 B2 JP 4545433B2 JP 2003434860 A JP2003434860 A JP 2003434860A JP 2003434860 A JP2003434860 A JP 2003434860A JP 4545433 B2 JP4545433 B2 JP 4545433B2
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- wafer
- tin film
- film forming
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- 238000000151 deposition Methods 0.000 title description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 166
- 238000000034 method Methods 0.000 claims description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 147
- 239000007789 gas Substances 0.000 description 105
- 239000010936 titanium Substances 0.000 description 32
- 238000012546 transfer Methods 0.000 description 30
- 230000008030 elimination Effects 0.000 description 20
- 238000003379 elimination reaction Methods 0.000 description 20
- 230000003068 static effect Effects 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000010410 layer Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1073—Barrier, adhesion or liner layers
- H01L2221/1078—Multiple stacked thin films not being formed in openings in dielectrics
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (1)
- 四塩化チタンとアンモニアを反応させることにより、被処理基板上に窒化チタン膜を成膜する成膜方法であって、
前記四塩化チタンと前記アンモニアを供給律速領域において反応させることにより、前記被処理基板上に第1の窒化チタン層を形成する第1のステップと、
前記第1の窒化チタン層を、窒素ガス又は水素ガスでアニールする第2のステップと、
前記四塩化チタンと前記アンモニアを反応律速領域において反応させることにより、アニールされた前記第1の窒化チタン層上に第2の窒化チタン層を形成する第3のステップと、
前記第2の窒化チタン層を、窒素ガス又は水素ガスでアニールする第4のステップと
を備え、
前記第1のステップにおける、前記アンモニアに対する前記四塩化チタンの分圧比は、前記第3のステップにおける当該分圧比より低く、
前記第1のステップにおける、前記被処理基板の温度は、前記第3のステップにおける前記被処理基板の温度より低い
ことを特徴とする成膜方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003434860A JP4545433B2 (ja) | 2003-12-26 | 2003-12-26 | 成膜方法 |
KR1020067012635A KR100885834B1 (ko) | 2003-12-26 | 2004-12-27 | 질화티타늄막의 성막 |
US10/584,642 US20080057344A1 (en) | 2003-12-26 | 2004-12-27 | Formation of Titanium Nitride Film |
EP04807927A EP1715079A4 (en) | 2003-12-26 | 2004-12-27 | Deposition of Titanium Titanium Film |
CN2004800389828A CN1898410B (zh) | 2003-12-26 | 2004-12-27 | 氮化钛膜的成膜 |
PCT/JP2004/019572 WO2005064041A1 (ja) | 2003-12-26 | 2004-12-27 | 窒化チタン膜の成膜 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003434860A JP4545433B2 (ja) | 2003-12-26 | 2003-12-26 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005194540A JP2005194540A (ja) | 2005-07-21 |
JP4545433B2 true JP4545433B2 (ja) | 2010-09-15 |
Family
ID=34736576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003434860A Expired - Fee Related JP4545433B2 (ja) | 2003-12-26 | 2003-12-26 | 成膜方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080057344A1 (ja) |
EP (1) | EP1715079A4 (ja) |
JP (1) | JP4545433B2 (ja) |
KR (1) | KR100885834B1 (ja) |
CN (1) | CN1898410B (ja) |
WO (1) | WO2005064041A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060128127A1 (en) * | 2004-12-13 | 2006-06-15 | Jung-Hun Seo | Method of depositing a metal compound layer and apparatus for depositing a metal compound layer |
US20060234502A1 (en) * | 2005-04-13 | 2006-10-19 | Vishwanath Bhat | Method of forming titanium nitride layers |
WO2007105432A1 (ja) * | 2006-02-24 | 2007-09-20 | Tokyo Electron Limited | Ti系膜の成膜方法および記憶媒体 |
JP5476269B2 (ja) * | 2010-09-29 | 2014-04-23 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
BR112013008352A2 (pt) * | 2010-10-07 | 2017-03-01 | W Dassel Mark | métodos e sistemas de reator mecanicamente fluidificados, apropriados para a produção de silício |
JP5617708B2 (ja) * | 2011-03-16 | 2014-11-05 | 東京エレクトロン株式会社 | 蓋体開閉装置 |
US8927059B2 (en) * | 2011-11-08 | 2015-01-06 | Applied Materials, Inc. | Deposition of metal films using alane-based precursors |
CN102766845B (zh) * | 2012-07-09 | 2015-02-25 | 珠海承鸥卫浴用品有限公司 | 一种金属表面pvd装饰性镀膜方法 |
WO2014056031A1 (en) * | 2012-10-12 | 2014-04-17 | Callidus Process Solutions Pty Ltd | Method of producing a hard facing material |
FR2997420B1 (fr) | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
FR2997557B1 (fr) | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
CN103165439A (zh) * | 2013-03-15 | 2013-06-19 | 上海华力微电子有限公司 | 接触孔中的阻隔层及其制造方法 |
CN109755244B (zh) * | 2017-11-06 | 2021-03-23 | 联华电子股份有限公司 | 一种制作动态随机存储器的埋入式字符线的方法 |
CN109132995A (zh) * | 2018-08-20 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | 应用于MEMS器件的TiN薄膜刻蚀方法 |
KR102563925B1 (ko) * | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | 반도체 제조 장치 |
JP2021022597A (ja) * | 2019-07-24 | 2021-02-18 | 東京エレクトロン株式会社 | キャパシタ形成システム及びキャパシタ形成方法 |
CN112779516B (zh) * | 2020-12-22 | 2024-03-08 | 苏州恒之清生物科技有限公司 | 具有硬质涂层保护的晶硅微针及其制备方法 |
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US6893963B2 (en) * | 2003-04-04 | 2005-05-17 | Powerchip Semiconductor Corp. | Method for forming a titanium nitride layer |
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2003
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2004
- 2004-12-27 US US10/584,642 patent/US20080057344A1/en not_active Abandoned
- 2004-12-27 EP EP04807927A patent/EP1715079A4/en not_active Withdrawn
- 2004-12-27 WO PCT/JP2004/019572 patent/WO2005064041A1/ja active Application Filing
- 2004-12-27 KR KR1020067012635A patent/KR100885834B1/ko not_active IP Right Cessation
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JP2001291682A (ja) * | 2000-02-01 | 2001-10-19 | Applied Materials Inc | 化学気相堆積により形成された窒化チタン膜のプラズマ処理 |
JP2002217133A (ja) * | 2000-12-25 | 2002-08-02 | Applied Materials Inc | バリアメタル膜の形成方法 |
JP2003221671A (ja) * | 2002-01-30 | 2003-08-08 | Tokyo Electron Ltd | ガス処理方法 |
JP2004149892A (ja) * | 2002-10-31 | 2004-05-27 | Applied Materials Inc | 窒化チタン膜の形成方法 |
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JP2005194540A (ja) | 2005-07-21 |
CN1898410A (zh) | 2007-01-17 |
KR20060107818A (ko) | 2006-10-16 |
KR100885834B1 (ko) | 2009-02-26 |
CN1898410B (zh) | 2010-09-29 |
EP1715079A4 (en) | 2008-03-05 |
US20080057344A1 (en) | 2008-03-06 |
WO2005064041A1 (ja) | 2005-07-14 |
EP1715079A1 (en) | 2006-10-25 |
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