JP4420908B2 - 電子素子搭載構造 - Google Patents
電子素子搭載構造 Download PDFInfo
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- JP4420908B2 JP4420908B2 JP2006108050A JP2006108050A JP4420908B2 JP 4420908 B2 JP4420908 B2 JP 4420908B2 JP 2006108050 A JP2006108050 A JP 2006108050A JP 2006108050 A JP2006108050 A JP 2006108050A JP 4420908 B2 JP4420908 B2 JP 4420908B2
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- 239000010410 layer Substances 0.000 claims description 75
- 239000012790 adhesive layer Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229920003235 aromatic polyamide Polymers 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 2
- 241000531908 Aramides Species 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 2
- -1 Poly (tetra-fluoroethylene) Polymers 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Details Of Resistors (AREA)
- Wire Bonding (AREA)
Description
Array;FCBGA)パッケージを完成させている。
また、本発明は、好ましい電気的性能を得られるように、異なる電子素子を同時に搭載構造に固着する電子素子搭載構造を提供することを課題とする。
少なくとも1つの開口が設けられた少なくとも1つの第1、第2の支持板と、
前記第1、第2の支持板の間に形成された少なくとも1つの接着層と、
作用面と非作用面を有し、前記第1、第2の支持板の開口に設けられた少なくとも1つの電子素子と、
を備え、
前記接着層は、前記電子素子が前記第1、第2の支持板の開口に固着されるように、一部が前記第1、第2の支持板の開口と前記電子素子との隙間に充填され、
前記搭載構造および電子素子面に回路層追加層構造が形成され、
前記電子素子の電極パッドに電気的に接続されるように前記回路層追加層構造に複数の導電構造が形成され、
前記回路層追加層構造の表面に接続パッドが形成されている。
[第一の実施形態]
本実施形態の電子素子搭載構造では、少なくとも1つの開口が設けられた少なくとも1つの支持板と、
作用面と非作用面を有し、前記支持板の開口に設けられた少なくとも1つの電子素子と、
前記支持板の表面に形成された少なくとも1つの接着層と、
を備え、
前記接着層は、前記電子素子が前記支持板の開口に固着されるように、一部が前記開口と前記電子素子との隙間に充填されている。
するための複数の開口651が形成されている。
[第二の実施形態]
本実施形態の電子素子搭載構造では、少なくとも1つの開口が設けられた少なくとも1つの第1、第2の支持板と、前記第1、第2の支持板の間に形成された少なくとも1つの接着層と、作用面と非作用面を有し、前記第1、第2の支持板の開口に設けられた少なくとも1つの電子素子と、
を備え、
前記接着層は、前記電子素子が前記第1、第2の支持板の開口に固着されるように、一部が前記第1、第2の支持板の開口と前記電子素子との隙間に充填されている。
積層構造であってよく、例えば金属材料、セラミックス材料、回路構造を有する回路板またはその他の誘電材料などである支持板を介して、接着層である有機樹脂材のホットプレスを行うことにより、別途に接着材の注入は必要とせず、電子素子を効果的に搭載構造に固着することができる。
[第3の実施形態]
図4−Aから図4−Cは、本発明に係る電子素子搭載構造のもう一つ実施形態を模式的に示している。前記実施形態と同一または近似の素子には同一または近似の素子番号を付与し、また、本案の特徴がより明確になるように、詳しい説明を省略し、異なる点のみを説明する。
支持板25には少なくとも1つの開口251が設けられ、搭載構造2は、図面において支持板25と接着層27とを有する2層構造を例に示しているが、これに限定されるものではない。
接着層27は、電子素子23が支持板25の開口251に固着されるように、一部が開口251と電子素子23との隙間に充填されている。一部が開口251に充填された接着層27は、支持板25の表面における接着層27がホットプレスされることによって生じたものである。
[第4の実施形態]
図5−Aは、本発明に係る電子素子搭載構造のもう一つの実施形態を模式的に示している。電子素子搭載構造3では、第1、第2の支持板35、36の間に接着層37が介在されている3層式構造であり、第1、第2の支持板35、36には、電子素子33が収容されるための開口351、361がそれぞれ設けられている。
子搭載構造3では、第1、第2の支持板35、36の間に接着層37が介在されている3層式構造であり、第1、第2の支持板35、36には、電子素子33が収容されるための開口351、361がそれぞれ設けられ、電子素子33の作用面が搭載構造3の底面に突出している。
101 電極パッド
11 金属バンプ
12 回路板
121 電気接続パッド
122、62 回路層
123 絶縁層
125、63 導電構造
13、65 ソルダーレジスト層
14 半田ボール
2、3 搭載構造
21、251、351、361、651 開口
23、33 電子素子
231 電極パッド
25 支持板
27、37 接着層
35 第1の支持板
36 第2の支持板
6 回路層追加層構造
61 誘電層
64 接続パッド
66 導電素子
Claims (13)
- 電子素子搭載構造において、
少なくとも1つの開口が設けられた少なくとも1つの第1、第2の支持板と、
前記第1、第2の支持板の間に形成された少なくとも1つの接着層と、
作用面と非作用面を有し、前記第1、第2の支持板の開口に設けられた少なくとも1つの電子素子と、
を備え、
前記接着層は、前記電子素子が前記第1、第2の支持板の開口に固着されるように、一部が前記第1、第2の支持板の開口と前記電子素子との隙間に充填され、
前記搭載構造および電子素子面に回路層追加層構造が形成され、
前記電子素子の電極パッドに電気的に接続されるように前記回路層追加層構造に複数の導電構造が形成され、
前記回路層追加層構造の表面に接続パッドが形成されていることを特徴とする電子素子搭載構造。 - 前記接着層は、有機薄膜誘電材料、液体有機樹脂材料及びプリプレグ(prepreg)からなる組合せのうちの一つであることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記第1の支持板は、金属材、セラミックス材、回路構造を有する回路板またはその他の誘電材料のいずれか1つであることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記第2の支持板は、金属材、セラミックス材、回路構造を有する回路板またはその他の誘電材料のいずれか1つであることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記電子素子は、パッシブ素子、アクティブ素子、光電素子及び半導体チップからなる組合せのうちの一つであることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記電子素子の作用面は、前記搭載構造の頂面に一致していることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記電子素子の作用面は、前記搭載構造の頂面に突出していることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記電子素子の非作用面は、前記搭載構造の底面に一致していることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記電子素子の非作用面は、前記搭載構造の底面に突出していることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記回路層追加層構造は、誘電層と、前記誘電層上に積層された回路層と、前記誘電層の中に形成されている導電構造とを備えることを特徴とする請求項1に記載の電子素子搭載構造。
- 前記回路層追加層構造の表面にソルダーレジスト層が形成され、
前記ソルダーレジスト層の表面に前記回路層追加層構造の接続パッドを露出するための複数の開口が形成されていることを特徴とする請求項1に記載の電子素子搭載構造。 - 前記ソルダーレジスト層の開口には、前記接続パッドに電気的に接続される導電素子が形成されていることを特徴とする請求項11に記載の電子素子搭載構造。
- 前記導電素子は、半田ボール、針状金属または導電接着材のいずれか1つであることを特徴とする請求項12に記載の電子素子搭載構造。
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