JP3609544B2 - Receiver - Google Patents

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Publication number
JP3609544B2
JP3609544B2 JP19498596A JP19498596A JP3609544B2 JP 3609544 B2 JP3609544 B2 JP 3609544B2 JP 19498596 A JP19498596 A JP 19498596A JP 19498596 A JP19498596 A JP 19498596A JP 3609544 B2 JP3609544 B2 JP 3609544B2
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Japan
Prior art keywords
light receiving
receiving element
light
type high
concentration layer
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Expired - Fee Related
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JP19498596A
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Japanese (ja)
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JPH1041537A (en
JP3609544B6 (en
Inventor
晋 西村
隆司 油本
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Sanyo Electric Co Ltd
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Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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Priority to JP1996194985A priority Critical patent/JP3609544B6/en
Priority claimed from JP1996194985A external-priority patent/JP3609544B6/en
Publication of JPH1041537A publication Critical patent/JPH1041537A/en
Publication of JP3609544B2 publication Critical patent/JP3609544B2/en
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Publication of JP3609544B6 publication Critical patent/JP3609544B6/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は光センサーに好適な受光装置に関する。
【０００２】
【従来の技術】
従来より赤外線リモコンや短距離光通信の受信部を構成する光センサーに用いられる受光装置においては、例えば実公平５−３６１８１号公報に示されるように、電磁ノイズの影響を受けやすい。そこで受光素子の前方に、金属メッシュや導電性フィルムを配置してグランド電位に接続し、あるいは受光素子の表面に透明電極等で電磁シールドを施して、金属ケースに収納したり樹脂モールドを行っていた。
【０００３】
一方、受光素子部分と受光信号処理回路をモノリシック素子として組み込む場合、特公平７−１２０７６１号公報などに示されるように、受光信号処理回路のゲートやソースを形成するときに、同時に受光素子部分の表面に高濃度層を形成し、この高濃度層で配線と同時にシールドをさせようとするものがある。
【０００４】
【発明が解決しようとする課題】
しかしながら、受光素子組立て体の中に電磁シールドを埋め込むものはメッシュやフィルムの位置ずれ防止や配線などが煩雑で、生産歩留まりが低くなる。また素子表面に透明電極等を設けると、そのシールド用電極と素子表面の間でコンデンサーを形成してしまい、電気容量の増大となって、受信感度が低下し、光通信にあっては通信可能到達距離が著しく短くなるという不都合がある。
【０００５】
一方、受光素子部分と受光信号処理回路をモノリシックに組み込む場合、受光素子に求められる光電気特性に対応する層の深さや不純物濃度と、回路部分に求められるドーパントや不純物濃度が異なり、あるいはこれら受光素子部分と回路部分の間のマッチングが取れなくなる。従って、シールド層を配線等に利用することは可能であるが、光信号の減衰やＳ／Ｎ比低下を生じることとなった。更にこのような回路付モノリシック受光素子は、製造プロセスが回路部分に制約されるので、受光素子としての高速応答性が得られず、特にＰｉＮホトダイオードは製造できなかった。
【０００６】
【課題を解決するための手段】
本発明は上述の点を考慮して、受光特性の良好なＰｉＮホトダイオードを得るものである。本発明は、 半導体基板の表面に設けられたＰ型高濃度層からなる受光面を有した受光素子と、その受光素子の載置部近傍に受光素子の側面と対向するような導電性壁を有したフレームと、該フレームの載置部に前記受光素子の底面を固着する絶縁性の接着剤と、前記フレームとＰ型高濃度層とをグランド電位に接続する配線手段を具備したものである。
【０００７】
より好ましくは、半導体基板は受光領域（Ｐ型高濃度層）に接する領域が低不純物濃度となるものを用い、Ｐ型高濃度層の周囲にそれを包囲するようなＮ型高濃度層を設ける。
【０００８】
【発明の実施の形態】
図１は、本発明実施例の受光装置の側面断面図ａと平面図ｂである。図において、１は半導体基板で、例えば光吸収層を成すように不純物濃度が４×１０１２ｃｍ−３以下の低不純物濃度のＮ型シリコン基板を用いる。特に赤外光に感度を高くし、高速応答を得るためには、空乏層の広がりも考慮して、基板は５００Ω／ｃｍ以上である事が好ましい。また半導体基板１の導電型は、受光素子の出力を得る集積回路と同じフレームを用いる為に裏面の導電型と電流印加手段に制限を受けるが、他方基板自体がノイズを拾い易いか否かの特性、表面に有効な電磁シールド層を設け易いかどうかで定める。
【０００９】
２は、その半導体基板１の表面に設けられたＰ型高濃度層（Ｐ＋層）で、受光面を構成している。このＰ型高濃度層（Ｐ＋層）は、例えば深さ１乃至２μｍにホウ素（Ｂ）を拡散してシート抵抗２０Ω／□として構成している。光感度を得るためには、このＰ型高濃度層の表面積は広い方がよく、シート抵抗値は１０ｋΩ／□以下がよい。そしてこのＰ型高濃度層（Ｐ＋層）を電磁シールド層として用いるために、この層は５０Ω／ｃｍ以下であることが最も好ましい。３は、そのＰ型高濃度層２を周囲に設けられたＮ型高濃度層（Ｎ＋層）で、電気的に高ゲインを有する層であり、半導体基板１の表面にＰ型高濃度層２を包囲するように設けられる。従ってこのＮ型高濃度層３は、表面から観察した形状はロ字状を成し、深さ１乃至２μｍに燐（Ｐ）を不純物濃度１×１０２０ｃｍ−３程度に拡散して構成している。このＮ型高濃度層３は、不所望の光に対する感度を低減するとともに、ｎ型の電極を取り出すために設けたものである。
【００１０】
この半導体の表面には、表面保護と反射防止のために二酸化ケイ素（ＳｉＯ２）等からなる絶縁被膜７が設けられている。そして、この絶縁膜７の上にはアルミニウムからなる電極８１、８２が設けられ、絶縁膜７に設けられた透孔を介して各層とオーミック接触が取られている。なお、Ｐ型高濃度層２に接続されている電極８２は、素子表面の外周に沿って、Ｎ型高濃度層３の表面上方を覆う様に、略ロ字状に設けられている。
【００１１】
以上の説明が受光素子に関する部分であり、ＰｉＮホトダイオードを構成している。受光素子とその受光素子の信号を受ける集積回路素子９０は、フレームに載置され、配線手段９１、９２で配線される。
【００１２】
４は銅、鉄、アルミニウム若しくはこれらの合金からなるフレームで、必要に応じて錫メッキなどが施されており、受光素子の載置部には凹部４１を有している。この例では受光素子の載置部近傍に受光素子の側面と対向するような導電性壁を有する様に、凹部４１の深さを受光素子の高さとほぼ同じに設けてある。５は、フレーム４の載置部に受光素子の底面を固着する絶縁性の接着剤である。Ｐ型高濃度層（Ｐ＋層）２をシールド層とし、受光素子をシールドで覆う様に構成するため、両者をワイヤボンド線などの配線手段９２で接続する。
【００１３】
このように構成することによって、製造においては金属ネットなどは必要とせず、組立て容易であり、表面電極により不所望に要領の大きいコンデンサは形成されず、到達距離と雑音発生距離を測定した結果、良好な結果が得られた。ここに到達距離とは、一定の光出力のリモコンを用い、準備した受光装置をユニットにしてセットしたテレビ装置が、リモコンの信号を受け付けて正常に動作する最大離隔距離のことで、１０ｃｍ単位で測定した。また雑音発生距離とは、準備した受光装置に電源を与えて出力をモニターできる状態のユニットとし、テレビ装置とインバータ螢光灯のノイズを発生する家庭用機器に順次近接させ、出力に雑音成分が現れたときの機器と受光素子ユニットの距離をいう。
【００１４】
光特性について具体的に説明する。受光素子ユニットは、受光素子の上に金属ネットを配置したいわゆる従来の受光素子ユニットＡと、上述した実施例のうちフレーム４に凹部を持たないで受光素子側面がフレームから露出した受光素子ユニットＢと、上述した実施例通りの受光素子ユニットＣで比較した。１ロット５０個のテレビ用リモコンセットの受光素子ユニット５ロットずつにおいて、到達距離と雑音発生距離を測定した。到達距離は、従来のＡが最も遠く、最大のもので９ｍであり、Ｂ、Ｃはほとんど同じで、５ロット平均は５．４ｍ、５．６ｍであった。それに対して、雑音発生距離は、従来のＡと本発明実施例のＣが共に０ｍｍであり、Ｂは４〜２５ｍｍであった。従って、ユニットＢを従来と比較すると組立て工程・歩留まりが良好な上実用上問題がなく、本発明実施例のユニットＣにおいては、製造上も有利なだけでなく、光特性上もきわめて優れたものと言える。
【００１５】
更にＰ型高濃度層２は受光面を形成するものであるが、Ｐ型高濃度層以外からの生成キャリアが拡散により光電流として寄与してしまい、応答性が悪くなる。例えば矩形波の光信号が入射した場合、受光部で生成したキャリアによる光電流波形は光信号に追従した形となるが、受光部以外で生成されたキャリアは、拡散により光電流として寄与するため、拡散速度分、入射光信号に対して遅れることとなる。従って受光素子の出力としては、入射光信号の立ち上がりに対しては追従するものの、立ち下がりに対しては波形なまりが生じる。さらに受光面の周辺の遮光性電極との境界では遮光できない部分が広がり、漏れ電流が発生することがあった。
【００１６】
そこで図２ａに示すように、先の例と同程度の不純物濃度の低いＮ型の半導体基板１の表面にＰ型高濃度層２を設けるとともに、裏面に基板と同導電型の高濃度層１１を形成する。そしてＰ型高濃度層（Ｐ＋層）２の周辺にＰ型高濃度層２と離れて別のＰ型高濃度層（Ｐ＋層）６を設ける。さらに、その周囲に設けたＰ型高濃度層６の上方を、遮光性の電極８３で覆う。保護膜７は先の実施例と同様であるが、フレーム４には導電性の接着剤５１を用いる。そして、半導体基板１の裏面と受光部であるＰ型高濃度層２の間に所定の電圧を印加し、さらに半導体基板１のの裏面と周辺のＰ型高濃度層６の間に同じ電圧を印加する。これらの電圧印加は、受光部であるＰ型高濃度層２の電圧印加は光出力を得るためのものであるから、別途Ｐ型高濃度層６にバイアス印加するのが好ましい。
【００１７】
このようにすることで、例えば矩形波の光信号が入射した場合、受光素子の出力としては、入射光信号の立ち上がりに対しては追従し、立ち下がりに対しても波形なまりがきわめて少なくなった。また、図２ｂに示すように、受光素子の表面位置において、遮光電極の下側における感度がシャープとなり、従来破線のように広がっていた相対感度が、実線で示す特性のように受光領域で鋭敏となり、応答特性も光入力の強さによく追従した。また受光素子の載置部近傍に受光素子の側面と対向するように設けられたフレーム４の導電性壁は低くてもよい。
【００１８】
【発明の効果】
以上の如く、受光面を電磁シールドとし、側面を金属フレームで覆ったので、生産性がよく、ノイズに強く、高速で高光感度の受光素子が得られた。
【図面の簡単な説明】
【図１】本発明実施例の受光素子の側面断面図ａと平面図ｂである。
【図２】他の実施例の受光素子の側面断面図ａと特性図ｂである。
【符号の説明】
１ 半導体基板
２ Ｐ型高濃度層（Ｐ＋層）
３ Ｎ型高濃度層
４ フレーム
５ 接着剤[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light receiving device suitable for an optical sensor.
[0002]
[Prior art]
Conventionally, a light receiving device used for an optical sensor constituting an infrared remote controller or a short-distance optical communication receiver is easily affected by electromagnetic noise as disclosed in, for example, Japanese Utility Model Publication No. 5-36181. Therefore, a metal mesh or conductive film is placed in front of the light-receiving element and connected to the ground potential, or the surface of the light-receiving element is electromagnetically shielded with a transparent electrode or the like, and is housed in a metal case or resin molded. It was.
[0003]
On the other hand, when the light receiving element portion and the light receiving signal processing circuit are incorporated as a monolithic element, as shown in Japanese Patent Publication No. 7-120761, the gate and source of the light receiving signal processing circuit are formed at the same time. There is a type in which a high concentration layer is formed on the surface and the high concentration layer is used to shield simultaneously with the wiring.
[0004]
[Problems to be solved by the invention]
However, in the case where an electromagnetic shield is embedded in the light receiving element assembly, mesh and film misalignment prevention and wiring are complicated, and the production yield is lowered. If a transparent electrode or the like is provided on the element surface, a capacitor is formed between the shielding electrode and the element surface, resulting in an increase in electric capacity, a decrease in reception sensitivity, and communication possible in optical communication. There is an inconvenience that the reach is significantly shortened.
[0005]
On the other hand, when the light receiving element portion and the light receiving signal processing circuit are monolithically incorporated, the depth and impurity concentration of the layer corresponding to the photoelectric characteristics required for the light receiving element and the dopant and impurity concentration required for the circuit portion are different, or these light receiving elements. Matching between the element portion and the circuit portion cannot be obtained. Therefore, the shield layer can be used for wiring or the like, but the optical signal is attenuated and the S / N ratio is reduced. Furthermore, since such a monolithic light-receiving element with a circuit has a manufacturing process restricted to a circuit portion, high-speed response as a light-receiving element cannot be obtained, and in particular, a PiN photodiode cannot be manufactured.
[0006]
[Means for Solving the Problems]
In consideration of the above points, the present invention provides a PiN photodiode having good light receiving characteristics. The present invention provides a light receiving element having a light receiving surface made of a P-type high concentration layer provided on the surface of a semiconductor substrate, and a conductive wall that faces the side surface of the light receiving element in the vicinity of the mounting portion of the light receiving element. And an insulating adhesive for fixing the bottom surface of the light receiving element to the mounting portion of the frame, and wiring means for connecting the frame and the P-type high concentration layer to a ground potential. .
[0007]
More preferably, a semiconductor substrate having a low impurity concentration in a region in contact with the light receiving region (P-type high-concentration layer) is provided, and an N-type high-concentration layer surrounding the P-type high-concentration layer is provided. .
[0008]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a side sectional view a and a plan view b of a light receiving device according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a semiconductor substrate. For example, an N-type silicon substrate having an impurity concentration of 4 × 10 12 cm −3 or less is used so as to form a light absorption layer. In particular, in order to increase sensitivity to infrared light and obtain a high-speed response, the substrate is preferably 500 Ω / cm or more in consideration of the spread of the depletion layer. The conductivity type of the semiconductor substrate 1 is limited by the conductivity type on the back surface and the current application means because it uses the same frame as the integrated circuit that obtains the output of the light receiving element, but whether the other substrate itself easily picks up noise or not. It is determined by characteristics and whether it is easy to provide an effective electromagnetic shield layer on the surface.
[0009]
Reference numeral 2 denotes a P-type high-concentration layer (P + layer) provided on the surface of the semiconductor substrate 1 and constitutes a light receiving surface. The P-type high concentration layer (P + layer) is configured to have a sheet resistance of 20Ω / □ by diffusing boron (B) to a depth of 1 to 2 μm, for example. In order to obtain photosensitivity, the P-type high concentration layer should have a large surface area, and the sheet resistance value should be 10 kΩ / □ or less. In order to use this P-type high concentration layer (P + layer) as an electromagnetic shield layer, this layer is most preferably 50 Ω / cm or less. Reference numeral 3 denotes an N-type high-concentration layer (N + layer) provided around the P-type high-concentration layer 2 and has a high electrical gain. The P-type high-concentration layer 2 is formed on the surface of the semiconductor substrate 1. Is provided so as to surround. Therefore, the N-type high concentration layer 3 is formed in a square shape when observed from the surface, and phosphorus (P) is diffused to a depth of 1 to 2 μm to an impurity concentration of about 1 × 10 20 cm −3. ing. The N-type high concentration layer 3 is provided to reduce sensitivity to undesired light and to take out an n-type electrode.
[0010]
An insulating coating 7 made of silicon dioxide (SiO 2 ) or the like is provided on the surface of the semiconductor to protect the surface and prevent reflection. Then, electrodes 81 and 82 made of aluminum are provided on the insulating film 7 and are in ohmic contact with each layer through a through hole provided in the insulating film 7. The electrode 82 connected to the P-type high concentration layer 2 is provided in a substantially square shape so as to cover the upper surface of the N-type high concentration layer 3 along the outer periphery of the element surface.
[0011]
The above description relates to the light receiving element and constitutes a PiN photodiode. The light receiving element and the integrated circuit element 90 that receives the signal from the light receiving element are placed on a frame and wired by wiring means 91 and 92.
[0012]
Reference numeral 4 denotes a frame made of copper, iron, aluminum, or an alloy thereof, which is plated with tin as necessary, and has a recess 41 in the mounting portion of the light receiving element. In this example, the depth of the concave portion 41 is provided substantially the same as the height of the light receiving element so as to have a conductive wall facing the side surface of the light receiving element in the vicinity of the mounting portion of the light receiving element. Reference numeral 5 denotes an insulating adhesive that fixes the bottom surface of the light receiving element to the mounting portion of the frame 4. In order to configure the P-type high concentration layer (P + layer) 2 as a shield layer and cover the light receiving element with the shield, both are connected by a wiring means 92 such as a wire bond line.
[0013]
By configuring in this way, a metal net or the like is not required in manufacturing, and it is easy to assemble, and a capacitor having an undesirably large size is not formed by the surface electrode, and as a result of measuring the reach distance and the noise generation distance, Good results were obtained. Here, the reach distance is the maximum separation distance at which a television set using a remote controller with a constant light output and the prepared light receiving device as a unit accepts signals from the remote controller and operates normally, in units of 10 cm. It was measured. The noise generation distance refers to a unit that can supply power to the prepared light receiving device and monitor the output, and is placed in close proximity to the household equipment that generates noise from the television and the inverter fluorescent lamp, and the output has noise components. The distance between the device and the light receiving element unit when it appears.
[0014]
The optical characteristics will be specifically described. The light receiving element unit includes a so-called conventional light receiving element unit A in which a metal net is arranged on the light receiving element, and a light receiving element unit B in which the side surface of the light receiving element is exposed from the frame without having a recess in the frame 4 in the above-described embodiment. And the light receiving element unit C as in the above-described embodiment. The reach distance and the noise generation distance were measured in 5 lots of light receiving element units of 50 TV remote control sets per lot. The distance reached by the conventional A was the longest and the maximum was 9 m, B and C were almost the same, and the average of 5 lots was 5.4 m and 5.6 m. On the other hand, the noise generation distance was 0 mm for both conventional A and C for the embodiment of the present invention, and B was 4 to 25 mm. Therefore, compared with the conventional unit B, the assembly process / yield is good and there is no practical problem. The unit C according to the embodiment of the present invention is not only advantageous in terms of manufacturing but also extremely excellent in optical characteristics. It can be said.
[0015]
Further, although the P-type high concentration layer 2 forms a light receiving surface, the generated carriers from other than the P-type high concentration layer contribute to the photocurrent due to diffusion, resulting in poor responsiveness. For example, when a rectangular wave optical signal is incident, the photocurrent waveform generated by the carrier generated by the light receiving unit follows the optical signal, but the carrier generated outside the light receiving unit contributes to the photocurrent by diffusion. , The diffusion speed is delayed with respect to the incident light signal. Accordingly, the output of the light receiving element follows the rising of the incident light signal, but the waveform is rounded for the falling. Further, a portion that cannot be shielded from light spreads at the boundary with the light shielding electrode around the light receiving surface, and a leakage current may occur.
[0016]
Therefore, as shown in FIG. 2a, a P-type high-concentration layer 2 is provided on the surface of an N-type semiconductor substrate 1 having a low impurity concentration similar to the previous example, and a high-concentration layer 11 having the same conductivity type as that of the substrate is provided on the back surface. Form. Then, another P-type high concentration layer (P + layer) 6 is provided around the P-type high concentration layer (P + layer) 2 apart from the P-type high concentration layer 2. Further, the light shielding electrode 83 covers the upper part of the P-type high-concentration layer 6 provided around the periphery. The protective film 7 is the same as in the previous embodiment, but a conductive adhesive 51 is used for the frame 4. Then, a predetermined voltage is applied between the back surface of the semiconductor substrate 1 and the P-type high concentration layer 2 as the light receiving portion, and the same voltage is applied between the back surface of the semiconductor substrate 1 and the surrounding P-type high concentration layer 6. Apply. These voltage applications are for applying a voltage to the P-type high concentration layer 6 separately because the voltage application of the P-type high concentration layer 2 as a light receiving portion is for obtaining a light output.
[0017]
By doing so, for example, when an optical signal of a rectangular wave is incident, the output of the light receiving element follows the rising of the incident optical signal, and the waveform rounding is extremely reduced for the falling. . Further, as shown in FIG. 2b, the sensitivity at the lower side of the light shielding electrode becomes sharp at the surface position of the light receiving element, and the relative sensitivity, which has spread as shown by the broken line in the related art, is sharp in the light receiving region as shown by the solid line. Thus, the response characteristics closely follow the intensity of light input. Further, the conductive wall of the frame 4 provided in the vicinity of the mounting portion of the light receiving element so as to face the side surface of the light receiving element may be low.
[0018]
【The invention's effect】
As described above, since the light receiving surface is an electromagnetic shield and the side surface is covered with a metal frame, a light receiving element with high productivity, noise resistance, high speed and high photosensitivity can be obtained.
[Brief description of the drawings]
FIG. 1 is a side sectional view a and a plan view b of a light receiving element according to an embodiment of the present invention.
FIG. 2 is a side sectional view a and a characteristic diagram b of a light receiving element of another embodiment.
[Explanation of symbols]
1 Semiconductor substrate 2 P-type high concentration layer (P + layer)
3 N-type high concentration layer 4 Frame 5 Adhesive

Claims (1)

半導体基板の表面に設けられたＰ型高濃度層からなる受光面を有した受光素子と、その受光素子の載置部近傍に受光素子の側面と対向するような導電性壁を有したフレームと、該フレームの載置部に前記受光素子の底面を固着する絶縁性の接着剤と、前記フレームとＰ型高濃度層とをグランド電位に接続する配線手段を具備したことを特徴とする受光装置。A light-receiving element having a light-receiving surface made of a P-type high-concentration layer provided on the surface of the semiconductor substrate, and a frame having a conductive wall in the vicinity of the mounting portion of the light-receiving element so as to face the side surface of the light-receiving element; A light receiving device comprising: an insulating adhesive for fixing the bottom surface of the light receiving element to the mounting portion of the frame; and wiring means for connecting the frame and the P-type high concentration layer to a ground potential. .
JP1996194985A 1996-07-24 Receiver Expired - Fee Related JP3609544B6 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1996194985A JP3609544B6 (en) 1996-07-24 Receiver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1996194985A JP3609544B6 (en) 1996-07-24 Receiver

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004181473A Division JP2004260227A (en) 2004-06-18 2004-06-18 Light receiving element and light receiving device

Publications (3)

Publication Number Publication Date
JPH1041537A JPH1041537A (en) 1998-02-13
JP3609544B2 true JP3609544B2 (en) 2005-01-12
JP3609544B6 JP3609544B6 (en) 2008-09-10

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Also Published As

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