JP2021529430A - ダイオードアレイを備えた光電子デバイス - Google Patents
ダイオードアレイを備えた光電子デバイス Download PDFInfo
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
Abstract
Description
第1の領域を、前記アレイのピッチ分、互いに分離するように基板上に形成し、
各第1の領域上にアクティブ領域を形成し、
各アクティブ領域上に第2の領域を形成する。
Claims (20)
- アキシャルダイオード(100) のアレイ(200) を備えており、
各アキシャルダイオードは、定常電磁波が形成される共振空胴を形成し、実質的に電磁波の極値(110) のレベルに配置されたアクティブ領域(104) を有し、
前記アレイは、前記アレイのアキシャルダイオードによって与えられる電磁放射線の強度を最大化するように構成されたフォトニック結晶を形成していることを特徴とする光電子デバイス。 - 前記アレイ(200) は、前記アキシャルダイオード(100) が載置されている支持体(105, 310)を有し、
各アキシャルダイオードは、前記支持体に載置された第1の半導体領域(102) 、前記第1の半導体領域と接する前記アクティブ領域(104) 、及び前記アクティブ領域と接する第2の半導体領域(106) の積層体を有していることを特徴とする請求項1に記載の光電子デバイス。 - 前記支持体(105, 310)と前記アキシャルダイオードの第1の半導体領域(102) との間に反射層(107, 308)を更に備えていることを特徴とする請求項2に記載の光電子デバイス。
- 前記反射層(107, 308)は金属で形成されていることを特徴とする請求項3に記載の光電子デバイス。
- 前記アキシャルダイオードの第2の半導体領域(106) は、前記アキシャルダイオードによって放射される放射線を少なくとも部分的に通す導電層(312) で覆われていることを特徴とする請求項3又は4に記載の光電子デバイス。
- 前記アキシャルダイオード(100) の少なくとも1つの高さ(h) は実質的にkλ/2nに比例し、
λは前記アキシャルダイオードによって放射される放射線の波長であり、kは正の整数であり、nは、対象とする光学モードでの前記アキシャルダイオードの有効屈折率と実質的に等しいことを特徴とする請求項1〜5のいずれか1つに記載の光電子デバイス。 - 前記アキシャルダイオード(100) は、電気絶縁性材料(202, 306)によって分離されていることを特徴とする請求項1〜6のいずれか1つに記載の光電子デバイス。
- 前記アレイは、少なくとも第1及び第2のダイオード組立体(604, 606, 608) を有しており、
第1のダイオード組立体のアキシャルダイオードは同一の第1の高さを有し、第2のダイオード組立体のアキシャルダイオードは同一の第2の高さを有し、前記第1の高さ及び前記第2の高さは異なることを特徴とする請求項1〜7のいずれか1つに記載の光電子デバイス。 - 前記アキシャルダイオードの少なくとも1つに関して、前記アキシャルダイオードの第2の半導体領域はエッチング停止層(502, 602a, 602b, 602c) によって分離された少なくとも2つの部分(106a, 106b)を有していることを特徴とする請求項2に記載の光電子デバイス。
- 前記エッチング停止層(502, 602a, 602b, 602c) の厚さは1〜200 nmの範囲内であることを特徴とする請求項9に記載の光電子デバイス。
- 前記アレイのピッチ対与えられる電磁放射線の波長の比率は、略0.4 〜略0.92の範囲内であることを特徴とする請求項1〜10のいずれか1つに記載の光電子デバイス。
- 前記アキシャルダイオードは発光ダイオード又はフォトダイオードであることを特徴とする請求項1〜11のいずれか1つに記載の光電子デバイス。
- アキシャルダイオード(100) のアレイ(200) を備えた光電子デバイスを製造する方法であって、
各アキシャルダイオードは、定常電磁波が形成される共振空胴を形成し、
各アキシャルダイオードのアクティブ領域(104) を、実質的に電磁波の極値(110) のレベルに配置し、
前記アレイは、前記アレイのアキシャルダイオードによって与えられる電磁放射線の強度を最大化するように構成されたフォトニック結晶を形成することを特徴とする方法。 - 前記アレイのアキシャルダイオードを形成する際に、
第1の半導体領域(106) を、前記アレイのピッチ分、互いに分離するように基板(304) 上に形成し、
各第1の半導体領域上にアクティブ領域(104) を形成し、
各アクティブ領域上に第2の半導体領域(102) を形成することを特徴とする請求項13に記載の方法。 - 全ての第2の半導体領域の高さが同一であるように、全ての第2の半導体領域をエッチングする第1のエッチング工程を有することを特徴とする請求項14に記載の方法。
- 前記アクティブ領域が電磁波の極値のレベルに配置されることを可能にする高さを全ての第1の半導体領域が有するように、全ての第1の半導体領域をエッチングする第2のエッチング工程を有することを特徴とする請求項14又は15に記載の方法。
- 前記アクティブ領域を形成する前に前記第2のエッチング工程を行うことを特徴とする請求項16に記載の方法。
- 前記基板を除去する工程の後、前記第2のエッチング工程を、前記基板に最も近かったアキシャルダイオードの端部から行うことを特徴とする請求項16に記載の方法。
- 前記第2のエッチング工程の停止層として使用され得る少なくとも1つの層を、前記アキシャルダイオードの少なくとも1つの第1の半導体領域に形成することを特徴とする請求項14〜18のいずれか1つに記載の方法。
- 前記アキシャルダイオードは発光ダイオード又はフォトダイオードであることを特徴とする請求項13〜19のいずれか1つに記載の方法。
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JP2023175251A JP2023175971A (ja) | 2018-06-20 | 2023-10-10 | ダイオードアレイを備えた光電子デバイス |
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FR1855450 | 2018-06-20 | ||
FR1855450A FR3083002B1 (fr) | 2018-06-20 | 2018-06-20 | Dispositif optoelectronique comprenant une matrice de diodes |
PCT/FR2019/051507 WO2019243746A1 (fr) | 2018-06-20 | 2019-06-19 | Dispositif optoelectronique comprenant une matrice de diodes |
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FR3118292A1 (fr) * | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
FR3118289A1 (fr) * | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
FR3118291B1 (fr) * | 2020-12-17 | 2023-04-14 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
FR3118290A1 (fr) * | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
FR3136863A1 (fr) * | 2022-06-20 | 2023-12-22 | Aledia | Elément émetteur de lumière à générateur d’onde stationnaire et dispositif optoélectronique associé |
FR3137497A1 (fr) * | 2022-06-30 | 2024-01-05 | Aledia | Dispositif optoélectronique à réflecteur |
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FR3083002B1 (fr) | 2020-07-31 |
JP2023175971A (ja) | 2023-12-12 |
US20210273132A1 (en) | 2021-09-02 |
EP3811418A1 (fr) | 2021-04-28 |
KR20210022087A (ko) | 2021-03-02 |
WO2019243746A1 (fr) | 2019-12-26 |
FR3083002A1 (fr) | 2019-12-27 |
KR102658970B1 (ko) | 2024-04-18 |
JP7366071B2 (ja) | 2023-10-20 |
TW202015255A (zh) | 2020-04-16 |
US20220140182A9 (en) | 2022-05-05 |
EP3811418B1 (fr) | 2023-08-02 |
EP4235822A2 (fr) | 2023-08-30 |
CN112292764A (zh) | 2021-01-29 |
EP4235822A3 (fr) | 2023-09-20 |
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