JP2021022707A - 基板処理装置、及び基板処理方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims description 8
- 239000007788 liquid Substances 0.000 claims abstract description 291
- 238000010438 heat treatment Methods 0.000 claims abstract description 106
- 230000007246 mechanism Effects 0.000 claims abstract description 75
- 238000009826 distribution Methods 0.000 claims description 81
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 229910002601 GaN Inorganic materials 0.000 description 1
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- 238000007792 addition Methods 0.000 description 1
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- 239000003960 organic solvent Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
複数枚の基板が浸漬される処理液を貯留する処理槽と、
前記処理槽の槽内に前記処理液を供給する供給路、及び前記供給路の途中にて前記処理液を加熱する加熱機構を含む、複数の液供給部と、
前記処理槽の槽内の複数個所で前記処理液の温度を測定する複数の槽内温度センサと、
を有する、基板処理装置。
2 基板
5 処理槽
6 液供給部
61 供給路
63 加熱機構
81 槽内温度センサ
Claims (15)
- 複数枚の基板が浸漬される処理液を貯留する処理槽と、
前記処理槽の槽内に前記処理液を供給する供給路、及び前記供給路の途中にて前記処理液を加熱する加熱機構を含む、複数の液供給部と、
前記処理槽の槽内の複数個所で前記処理液の温度を測定する複数の槽内温度センサと、
を有する、基板処理装置。 - 前記処理槽の槽内は水平方向に複数のゾーンに区分けされ、当該ゾーン毎に異なる前記液供給部が前記処理液を吐出するように、複数の前記液供給部が配置され、
水平方向に並ぶ複数の前記ゾーンのそれぞれに、1つ以上の前記槽内温度センサが配置される、請求項1に記載の基板処理装置。 - 水平方向に並ぶ複数の前記ゾーンのうちの少なくとも1つに、複数の前記槽内温度センサが鉛直方向に離間して配置される、請求項2に記載の基板処理装置。
- 複数の前記槽内温度センサの測定値に基づき前記処理槽の槽内温度の分布を求め、求めた分布に基づき前記加熱機構による前記処理液の加熱温度の目標値を設定する加熱温度設定部と、
前記加熱温度の目標値に基づき前記加熱機構の出力を制御する加熱制御部と、
を有する、請求項1〜3のいずれか1項に記載の基板処理装置。 - 前記加熱温度設定部は、前記液供給部毎に、前記加熱温度の目標値を設定する、請求項4に記載の基板処理装置。
- 複数の前記液供給部は、それぞれ、前記加熱機構の下流にて前記処理液の温度を測定する加熱温度センサを有し、
前記加熱制御部は、前記加熱温度の目標値と前記加熱温度センサの測定値との偏差に基づき、前記加熱機構の出力を制御する、請求項4又は5に記載の基板処理装置。 - 前記液供給部の前記供給路は、前記処理槽の槽内から取り出した前記処理液を、前記処理槽の槽内に戻す循環路である、請求項1〜6のいずれか1項に記載の基板処理装置。
- 前記液供給部は、前記供給路にて前記処理液を送る送液機構を有し、
前記送液機構の出力を制御する送液制御部を更に有する、請求項1〜7のいずれか1項に記載の基板処理装置。 - 複数の前記槽内温度センサの測定値に基づき前記処理槽の槽内温度の分布を求め、求めた分布に基づき前記送液機構による前記処理液の流量の目標値を設定する流量設定部を有し、
前記送液制御部は、前記流量の目標値に基づき前記送液機構の出力を制御する、請求項8に記載の基板処理装置。 - 前記処理槽の槽内は鉛直方向に複数のゾーンに区分けされ、当該ゾーン毎に異なる前記液供給部が前記処理液を吐出するように、複数の前記液供給部が配置され、
鉛直方向に並ぶ複数の前記ゾーンのそれぞれに、1つ以上の前記槽内温度センサが配置される、請求項1〜9のいずれか1項に記載の基板処理装置。 - 複数枚の基板が浸漬される処理液を処理槽に貯留することと、
前記処理槽の槽内の複数個所で前記処理液の温度を測定し、槽内温度の分布を求めることと、
を有する、基板処理方法。 - 求めた前記分布とその目標分布との偏差をゼロにするように、前記処理槽の槽内の複数個所で供給される前記処理液の加熱温度を別々に調整することを有する、請求項11に記載の基板処理方法。
- 求めた前記分布とその目標分布との偏差をゼロにするように前記処理液の加熱温度の目標値を補正し、補正した目標値と測定値との偏差をゼロにするように前記処理液を加熱する加熱機構の出力を制御する、請求項12に記載の基板処理方法。
- 求めた前記分布とその目標分布との偏差をゼロにするように、前記処理槽の槽内の複数個所で供給される前記処理液の流量を別々に調整することを有する、請求項11〜13のいずれか1項に記載の基板処理方法。
- 求めた前記分布とその目標分布との偏差をゼロにするように前記処理液の流量の目標値を補正し、補正した目標値と測定値との偏差をゼロにするように前記処理液を送る送液機構の出力を制御する、請求項14に記載の基板処理方法。
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CN202010714691.7A CN112309905A (zh) | 2019-07-30 | 2020-07-23 | 基板处理装置和基板处理方法 |
KR1020200093098A KR20210014583A (ko) | 2019-07-30 | 2020-07-27 | 기판 처리 장치 및 기판 처리 방법 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04357835A (ja) * | 1991-06-04 | 1992-12-10 | Matsushita Electric Ind Co Ltd | ウエット処理装置 |
JPH11243074A (ja) * | 1997-12-25 | 1999-09-07 | Tokyo Electron Ltd | 洗浄処理方法及び洗浄処理装置 |
JP2012216778A (ja) * | 2011-03-25 | 2012-11-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置及び基板処理方法 |
JP2018133558A (ja) * | 2017-02-15 | 2018-08-23 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP2018163978A (ja) * | 2017-03-24 | 2018-10-18 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2019125692A (ja) * | 2018-01-16 | 2019-07-25 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04357835A (ja) * | 1991-06-04 | 1992-12-10 | Matsushita Electric Ind Co Ltd | ウエット処理装置 |
JPH11243074A (ja) * | 1997-12-25 | 1999-09-07 | Tokyo Electron Ltd | 洗浄処理方法及び洗浄処理装置 |
JP2012216778A (ja) * | 2011-03-25 | 2012-11-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置及び基板処理方法 |
JP2018133558A (ja) * | 2017-02-15 | 2018-08-23 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP2018163978A (ja) * | 2017-03-24 | 2018-10-18 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2019125692A (ja) * | 2018-01-16 | 2019-07-25 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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KR20210014583A (ko) | 2021-02-09 |
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