JP2018506853A - プラズマ処理システム用の高温チャック - Google Patents
プラズマ処理システム用の高温チャック Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 69
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000009832 plasma treatment Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 38
- 238000012546 transfer Methods 0.000 claims description 10
- 239000012777 electrically insulating material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000523 sample Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 8
- 239000012809 cooling fluid Substances 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000011810 insulating material Substances 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 115
- 210000002381 plasma Anatomy 0.000 description 61
- 150000002500 ions Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
Claims (15)
- パックの上面を画定する電気絶縁材料と、
前記電気絶縁材料内に埋め込まれたヒータ要素と、
前記電気絶縁材料内に埋め込まれ、かつ前記ヒータ要素と前記上面との間に配置された複数の電極と、
前記電気絶縁材料に近接して配置された導電性プレートと
を備えるパックと、
前記プレートに電気的に接続されている導電性シャフトハウジングと、
前記ヒータ要素用の電気コネクタ及び前記電極用の電気コネクタを含む、複数のコネクタと
を備えるシャフトと、
前記シャフトハウジングに電気的に接続されている導電性ベースハウジングと、
前記ベースハウジング内に配置された電気絶縁端子ブロックであって、前記複数のコネクタが前記端子ブロックを通過する、電気絶縁端子ブロックと
を備えるベースと
を備える、ウエハチャックアセンブリ。 - 前記端子ブロックがポリエーテルエーテルケトンを含む、請求項1に記載のウエハチャックアセンブリ。
- 前記コネクタが、熱電対又は抵抗温度検出器用の一又は複数のコネクタを更に備える、請求項1に記載のウエハチャックアセンブリ。
- 前記コネクタが、熱伝達ガスを供給するように構成された一又は複数の流体導管を更に備え、前記上面は、前記熱伝達ガスが前記上面とウエハの底面との間に広がるためのチャネルを画定する、請求項1に記載のウエハチャックアセンブリ。
- 前記複数の電極用の前記電気コネクタの各々が、内側導電体、前記内側導電体周囲の絶縁層、前記絶縁層周囲の接地チューブ、及び前記接地チューブ周囲のセラミックチューブを備える、請求項1に記載のウエハチャックアセンブリ。
- 前記ウエハチャックアセンブリが内部に配置されるウエハ処理システムを更に備え、前記ウエハ処理システムが、
一又は複数のチャンバ壁によって境界付けられた処理チャンバと、
一又は複数の電源と
を備え、
前記ウエハチャックアセンブリは、少なくとも前記パックが前記処理チャンバ内にあるように配置されており、
前記一又は複数の電源が、前記複数の電極及び前記一又は複数のチャンバ壁の少なくとも1つと接続し、
前記電極と前記一又は複数のチャンバ壁の前記少なくとも1つとの間にRF電圧を、
ウエハを前記上面に静電気的にクランプするため、前記電極にわたりDC電圧差を
提供する、請求項1に記載のウエハチャックアセンブリ。 - 前記パックの前記上面を貫通するDCプローブを更に備え、
前記コネクタが前記DCプローブ用のコネクタを更に含み、前記一又は複数の電源のうちの1つの電源が、前記DCプローブからの信号に応じて、前記電極のうちの少なくとも1つと前記一又は複数のチャンバ壁のうちの前記少なくとも1つとの間でDCオフセットを調節する、請求項6に記載のウエハチャックアセンブリ。 - 前記導電性プレートが、0.5ミリメートルから1.5ミリメートルまでの間隙によって前記電気絶縁材料から分離され、前記ウエハ処理システムが、前記間隙内で、ヘリウム及び水素のうちの1つであるパージガスを供給し、前記パージガスが、周囲の処理チャンバに対して前記間隙内に正圧を提供する、請求項6に記載のウエハチャックアセンブリ。
- 前記導電性ベースハウジングが、冷却流体用の一又は複数のチャネルを画定し、前記導電性シャフトハウジングが、前記導電性プレートから前記シャフトハウジングを通って前記ベースハウジングまでの熱除去のための、少なくとも1.5mm厚の金属を備える、請求項1に記載のウエハチャックアセンブリ。
- プラズマ処理の方法であって、
電気絶縁上面を有するチャックの上に被加工物をロードすることと、
前記電気絶縁上面内の2つの空間的に分離された電極にわたってDC電圧差を提供して、前記被加工物を前記チャックにクランプすることと、
前記チャックに埋め込まれたヒータ要素に電流を通すことによって、前記チャック及び前記被加工物を加熱することと、
前記チャックを囲むチャンバに処理ガスを供給することと、
前記チャックの下の伝導プレートと、前記チャンバの一又は複数の壁との間にRF電圧を供給して、前記処理ガスからプラズマを点火することと
を含む、プラズマ処理の方法。 - 熱伝達ガスを前記上面を通して前記上面によって画定されたチャネル内に流すことを更に含み、前記チャネルは、前記熱伝達ガスが前記上面と前記被加工物との間に広がることを可能にする、請求項10に記載のプラズマ処理の方法。
- 前記チャックを加熱することが、前記上面を400℃以上の温度まで加熱することを含む、請求項10に記載のプラズマ処理の方法。
- 前記上面を貫通するDCプローブからの信号に応じて、前記電極の少なくとも1つと前記チャンバの前記一又は複数の壁の少なくとも1つとの間でDCオフセットを調節することを更に含む、請求項10に記載のプラズマ処理の方法。
- 前記伝導プレートと前記上面との間の間隙を通してパージガスを流すことを更に含む、請求項10に記載のプラズマ処理の方法。
- 前記チャックを支持するシャフトのシャフトハウジングと機械的に連結されているベースを通して冷却流体を流すことを更に含み、前記シャフトは、前記冷却流体が、前記ベース、前記シャフトハウジング及び前記伝導プレートを冷却するように、前記伝導プレートと機械的に連結されている、請求項14に記載のプラズマ処理の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/612,472 | 2015-02-03 | ||
US14/612,472 US9728437B2 (en) | 2015-02-03 | 2015-02-03 | High temperature chuck for plasma processing systems |
PCT/US2016/014079 WO2016126422A1 (en) | 2015-02-03 | 2016-01-20 | High temperature chuck for plasma processing systems |
Publications (2)
Publication Number | Publication Date |
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JP2018506853A true JP2018506853A (ja) | 2018-03-08 |
JP6816004B2 JP6816004B2 (ja) | 2021-01-20 |
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JP2017540792A Active JP6816004B2 (ja) | 2015-02-03 | 2016-01-20 | プラズマ処理システム用の高温チャック |
Country Status (6)
Country | Link |
---|---|
US (2) | US9728437B2 (ja) |
JP (1) | JP6816004B2 (ja) |
KR (1) | KR102515038B1 (ja) |
CN (1) | CN107210250B (ja) |
TW (1) | TWI700776B (ja) |
WO (1) | WO2016126422A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2021002168A1 (ja) * | 2019-07-01 | 2021-01-07 | ||
JPWO2021024858A1 (ja) * | 2019-08-08 | 2021-02-11 | ||
JP2021519517A (ja) * | 2018-03-27 | 2021-08-10 | ラム リサーチ コーポレーションLam Research Corporation | 埋め込み温度センサを備えた基板支持体のためのコネクタ |
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US9728437B2 (en) | 2017-08-08 |
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US10468285B2 (en) | 2019-11-05 |
KR20170108152A (ko) | 2017-09-26 |
CN107210250B (zh) | 2021-08-13 |
TW201637124A (zh) | 2016-10-16 |
WO2016126422A1 (en) | 2016-08-11 |
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