JP2017507492A - オプトエレクトロニクス部品 - Google Patents
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract
Description
2 出射方向
10 オプトエレクトロニクス半導体チップ
11 出射面
12 下面
13 オプトエレクトロニクス半導体チップの上のコンタクトパッド
20 ハウジング
30 変換粒子に入射する光線
31 変換された光線
40 散乱粒子に入射する光線
41 散乱された光線
42 散乱粒子に入射するさらなる光線
50 側壁に入射する光線
51 側壁に入射する光線
52 反射光線
53 変換粒子に入射する反射光線
60 直接出射される光線
70 接触要素
100 キャビティ
101 側壁
102 経年変化した側壁
105 キャビティの底部
106 キャビティの底部のコンタクトパッド
110 ポッティング材料
120 変換粒子
130 単一成分散乱粒子
131 経年変化した単一成分散乱粒子
140 多成分散乱粒子
141 経年変化した多成分散乱粒子
142 触媒
145 封止部
146 経年変化した封止部
Claims (14)
- 光線(30,40,42,50,51,60)を出射するための出射面(11)を有するオプトエレクトロニクス半導体チップ(10)および透明ポッティング材料(110)が配置されたキャビティ(100)を有するハウジング(20)を備え、
前記キャビティ(100)は、少なくとも1つの側壁(101)を備え、前記側壁(101)は前記側壁(101)に入射する光線(50,51)を少なくとも部分的に反射し、また、前記側壁(101)の反射性は動作期間の増加につれて低下し、
変換粒子(120)が前記ポッティング材料(110)に埋め込まれており、前記変換粒子は、前記変換粒子(120)に入射する第1の波長の光線(30,53)を第2の波長の光線(31)に変換し、
散乱粒子(130,140)が前記ポッティング材料(110)に埋め込まれており、前記散乱粒子は、前記散乱粒子(130,140)に入射する光線(40,42)を散乱し、また、前記散乱粒子の散乱能は前記動作期間の増加につれて向上する、
オプトエレクトロニクス部品(1)。 - 前記変換粒子(120)は、相対的に短波長の入射光線(30,53)を相対的に長波長の光線(31)に変換するように構成されている、請求項1に記載のオプトエレクトロニクス部品(1)。
- 前記散乱粒子(130,140)は、前記散乱能の経時的向上が前記散乱粒子(130,140)に対する短波電磁放射(特にUV放射)および/または熱および/または水分によって現れる影響に依存するように構成されている、請求項1または2に記載のオプトエレクトロニクス部品(1)。
- 前記散乱粒子(130,140)は、前記動作期間が増加するにつれて、前記散乱能を向上させる空洞、特に微小クラックを生じるように構成されている、請求項1〜3のいずれか一項に記載のオプトエレクトロニクス部品(1)。
- 前記散乱粒子(130,140)は、シリコーン、好ましくはフェニルシリコーンを含む、請求項1〜4のいずれか一項に記載のオプトエレクトロニクス部品(1)。
- 前記ポッティング材料(110)は、シリコーン、好ましくはメチルシリコーンを含む、請求項1〜4のいずれか一項に記載のオプトエレクトロニクス部品(1)。
- 前記ポッティング材料(110)は、シリコーン、好ましくはメチルシリコーンを含み、前記シリコーンの屈折率は、前記散乱粒子(130,140)の前記シリコーンの屈折率よりも低い、請求項5に記載のオプトエレクトロニクス部品(1)。
- 前記散乱粒子(130,140)は、ポリマー、好ましくはPMMAを含む、請求項1〜7のいずれか一項に記載のオプトエレクトロニクス部品(1)。
- 前記散乱粒子(140)は、多成分構成であり、かつ、
触媒(142)および透明封止部(145)を含み、
前記封止部(145)は、前記触媒(142)を少なくとも部分的に包囲し、
前記触媒(142)は、短波電磁放射、特にUV放射、および/または熱および/または水分の影響下での前記封止部(145)の分解を支援するように構成されている、請求項1〜8のいずれか一項に記載のオプトエレクトロニクス部品(1)。 - 前記触媒(142)は、TiO2を含む、請求項9に記載のオプトエレクトロニクス部品(1)。
- 前記封止部(145)は、ポリマーを含む、請求項9または10に記載のオプトエレクトロニクス部品(1)。
- 前記散乱粒子(130,140)の大きさは、1nm〜100μmである、請求項1〜11のいずれか一項に記載のオプトエレクトロニクス部品(1)。
- 前記ポッティング材料(110)の中の前記散乱粒子(130,140)の濃度は、前記オプトエレクトロニクス部品(1)の前記動作期間の増加につれて、前記側壁(101)の前記反射性の前記低下による前記ポッティング材料(110)の中での光子の平均経路長の変化の影響が、前記散乱粒子(130,140)の前記散乱能が同時に向上することによって減殺されるように選択され、
前記オプトエレクトロニクス部品(1)によって出射される放射の色位置の、前記オプトエレクトロニクス部品(1)の寿命の間の変化が最大でも5%である、請求項1〜12のいずれか一項に記載のオプトエレクトロニクス部品(1)。 - 前記ハウジング(20)は、プラスチック、好ましくはポリフタラミドまたはPCTを含む、請求項1〜13のいずれか一項に記載のオプトエレクトロニクス部品(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014102258.0 | 2014-02-21 | ||
DE102014102258.0A DE102014102258B4 (de) | 2014-02-21 | 2014-02-21 | Optoelektronisches Bauelement |
PCT/EP2015/053408 WO2015124621A1 (de) | 2014-02-21 | 2015-02-18 | Optoelektronisches bauelement |
Publications (2)
Publication Number | Publication Date |
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JP2017507492A true JP2017507492A (ja) | 2017-03-16 |
JP6225272B2 JP6225272B2 (ja) | 2017-11-01 |
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JP2016553408A Active JP6225272B2 (ja) | 2014-02-21 | 2015-02-18 | オプトエレクトロニクス部品 |
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US (1) | US9741910B1 (ja) |
JP (1) | JP6225272B2 (ja) |
CN (1) | CN105981187A (ja) |
DE (1) | DE102014102258B4 (ja) |
WO (1) | WO2015124621A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE102014114618A1 (de) * | 2014-10-08 | 2016-04-14 | Osram Opto Semiconductors Gmbh | Laserbauelement und Verfahren zu seiner Herstellung |
DE102015122641A1 (de) * | 2015-12-22 | 2017-06-22 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
JP6887109B2 (ja) * | 2017-02-02 | 2021-06-16 | パナソニックIpマネジメント株式会社 | 埋込形器具 |
WO2018145745A1 (en) * | 2017-02-09 | 2018-08-16 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
JP6912728B2 (ja) * | 2018-03-06 | 2021-08-04 | 日亜化学工業株式会社 | 発光装置及び光源装置 |
CN109407409B (zh) * | 2019-01-08 | 2023-10-13 | 京东方科技集团股份有限公司 | 背光模组及其制作方法、显示装置 |
DE102019134904A1 (de) * | 2019-12-18 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zum betreiben eines optoelektronischen halbleiterbauelements |
CN111613653B (zh) * | 2020-05-20 | 2023-08-22 | 深圳市华星光电半导体显示技术有限公司 | 显示面板与显示设备 |
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