JP2016219471A - 液充填方法 - Google Patents
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- JP2016219471A JP2016219471A JP2015099566A JP2015099566A JP2016219471A JP 2016219471 A JP2016219471 A JP 2016219471A JP 2015099566 A JP2015099566 A JP 2015099566A JP 2015099566 A JP2015099566 A JP 2015099566A JP 2016219471 A JP2016219471 A JP 2016219471A
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- 239000007788 liquid Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 188
- 239000000945 filler Substances 0.000 claims abstract description 144
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 abstract description 17
- 238000005429 filling process Methods 0.000 abstract description 5
- 239000011800 void material Substances 0.000 description 22
- 238000004140 cleaning Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
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Abstract
【解決手段】基板の上面上には、直立する多数のパターン要素が形成される。基板の上面に対する処理液による処理後に、当該上面上に充填材溶液を充填する液充填処理では、粘度が3センチポアズ以上である充填材溶液が、上面の中央部に付与される。そして、基板を毎分1000回以下の回転数にて回転することにより、上面の全体に付着する処理液が充填材溶液に置換されて所定の厚さの溶液層が形成される。このように、充填材溶液の粘度を比較的高くし、かつ、基板の回転時に作用する遠心力を比較的低くすることにより、充填材溶液を利用した充填材の充填においてパターン要素の変形を抑制することができる。
【選択図】図7
Description
81 溶液層
82 充填材層
91 上面
821 ボイド
910 パターン
911,911a パターン要素
912 ブリッジ
S11〜S15 ステップ
Claims (8)
- パターンが形成された基板の主面に対する処理液による処理後に、前記主面上に充填材溶液を充填する液充填方法であって、
a)基板の主面上において直立する多数のパターン要素が形成されており、粘度が3センチポアズ以上である充填材溶液を、前記主面の中央部に付与する工程と、
b)前記基板の半径をrミリメートルとし、(150/r)の平方根に1000を乗じて得た値をVとして、前記基板を毎分V回以下の回転数にて回転することにより、前記主面の全体に付着する処理液を前記充填材溶液に置換して所定の厚さの溶液層を形成する工程と、
を備えることを特徴とする液充填方法。 - 請求項1に記載の液充填方法であって、
前記充填材溶液が、溶媒として水を含むことを特徴とする液充填方法。 - 請求項1または2に記載の液充填方法であって、
前記充填材溶液が、表面張力低下剤を含むことを特徴とする液充填方法。 - 請求項3に記載の液充填方法であって、
前記表面張力低下剤がイソプロピルアルコールであることを特徴とする液充填方法。 - 請求項1ないし4のいずれかに記載の液充填方法であって、
前記充填材溶液の粘度が15センチポアズ以下であることを特徴とする液充填方法。 - 請求項1ないし5のいずれかに記載の液充填方法であって、
前記b)工程における前記基板の回転数が、毎分300回以上であることを特徴とする液充填方法。 - 請求項1ないし6のいずれかに記載の液充填方法であって、
前記多数のパターン要素において互いに隣接するパターン要素の先端が、前記主面に沿って伸びるブリッジにより連結されていることを特徴とする液充填方法。 - パターンが形成された基板の主面に対する処理液による処理後に、前記主面上に充填材溶液を充填する液充填方法であって、
a)基板の主面上において直立する多数のパターン要素が形成されており、充填材溶液を前記主面の中央部に付与する工程と、
b)前記基板を回転することにより、前記主面の全体に付着する処理液を前記充填材溶液に置換して所定の厚さの溶液層を形成する工程と、
を備え、
前記a)工程にて付与される前記充填材溶液の粘度、および、前記b)工程における前記基板の回転数が、固化した前記溶液層におけるボイドの発生を抑制する条件に設定されていることを特徴とする液充填方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015099566A JP6442359B2 (ja) | 2015-05-15 | 2015-05-15 | 液充填方法および充填材層形成方法 |
KR1020160053112A KR101827104B1 (ko) | 2015-05-15 | 2016-04-29 | 충전재층 형성 방법 |
US15/148,369 US9873141B2 (en) | 2015-05-15 | 2016-05-06 | Filler layer forming method |
TW105114392A TWI602219B (zh) | 2015-05-15 | 2016-05-10 | 液體填充方法 |
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JP2015099566A JP6442359B2 (ja) | 2015-05-15 | 2015-05-15 | 液充填方法および充填材層形成方法 |
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JP2016219471A true JP2016219471A (ja) | 2016-12-22 |
JP6442359B2 JP6442359B2 (ja) | 2018-12-19 |
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US (1) | US9873141B2 (ja) |
JP (1) | JP6442359B2 (ja) |
KR (1) | KR101827104B1 (ja) |
TW (1) | TWI602219B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020137646A1 (ja) * | 2018-12-28 | 2020-07-02 | 株式会社Screenホールディングス | 基板処理装置 |
JP2020198356A (ja) * | 2019-05-31 | 2020-12-10 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US11469117B2 (en) | 2018-10-17 | 2022-10-11 | SCREEN Holdings Co. Ltd. | Substrate processing apparatus, and substrate processing method |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10766054B2 (en) * | 2016-09-27 | 2020-09-08 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
JP6875104B2 (ja) * | 2016-11-15 | 2021-05-19 | 株式会社Screenホールディングス | 塗布方法 |
TWI741635B (zh) * | 2019-06-28 | 2021-10-01 | 日商斯庫林集團股份有限公司 | 基板處理方法及基板處理裝置 |
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- 2016-05-06 US US15/148,369 patent/US9873141B2/en active Active
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US20160336169A1 (en) | 2016-11-17 |
KR101827104B1 (ko) | 2018-02-07 |
JP6442359B2 (ja) | 2018-12-19 |
TWI602219B (zh) | 2017-10-11 |
KR20160134496A (ko) | 2016-11-23 |
US9873141B2 (en) | 2018-01-23 |
TW201705209A (zh) | 2017-02-01 |
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