JP2012514753A - 電磁放射センサおよび製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H01L27/144—Devices controlled by radiation
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Abstract
【選択図】図1
Description
上式でRsは懸垂脚108および110の各々の抵抗であり、Raは薄膜吸収体106の抵抗である。
[0047]脚108および110は大きい熱抵抗率を有するように設計されているため、センサ100の総電気抵抗は、懸垂脚108および110の電気抵抗に支配され(つまりRsはRaよりはるかに大きい)、したがって
Claims (22)
- 半導体センサを形成する方法であって、
基板を提供するステップと、
前記基板の上に反射層を形成するステップと、
前記反射層の上に犠牲層を形成するステップと、
前記犠牲層の上に厚さが約50nm未満の吸収体層を形成するステップと、
前記吸収体層の中に少なくとも1つの懸垂脚と一体の吸収体を形成するステップと、
前記犠牲層を除去するステップと
を含む方法。 - 前記犠牲層の中に少なくとも1つのチャネルを形成するステップと、
前記少なくとも1つのチャネル内に少なくとも1つの導電性ピラーを形成するステップであって、吸収体を形成するステップが、前記少なくとも1つの導電性ピラーの上に前記少なくとも1つの懸垂脚の少なくとも一部を形成するステップを含むステップと
をさらに含む、請求項1に記載の方法。 - 吸収体層を形成するステップが、前記犠牲層の上に約10nmの厚さの吸収体層を形成するステップを含む、請求項1に記載の方法。
- 吸収体層を形成するステップが、
前記犠牲層の表面を第1の自己終息反応物に露出するステップと、
前記犠牲層の前記表面を前記第1の自己終息反応物に露出した後に、前記犠牲層の前記表面を第2の自己終息反応物に露出するステップと
を含む、請求項1に記載の方法。 - 相補性金属酸化膜半導体(CMOS)基板と、
前記基板の上に形成された少なくとも1つの反射型コンポーネントと、
前記少なくとも1つの反射型コンポーネントから間隔を隔てて配置された少なくとも1つの吸収体であって、原子層堆積によって形成された少なくとも1つの吸収体と
を備えた相補性金属酸化膜半導体(CMOS)センサデバイス。 - 前記少なくとも1つの吸収体が50nm未満の最大厚さを有する、請求項5に記載のセンサデバイス。
- 前記少なくとも1つの吸収体が約10nmの最大厚さを有する、請求項6に記載のセンサデバイス。
- 前記少なくとも1つの吸収体が前記少なくとも1つの反射型コンポーネントから約2.5μmだけ間隔を隔てた、請求項6に記載のセンサデバイス。
- 前記CMOS基板から上に向かって延在している少なくとも1つの導電性ピラーと、
前記少なくとも1つのピラーによって支持された少なくとも1つの懸垂脚であって、前記少なくとも1つの吸収体を支持している少なくとも1つの懸垂脚と
をさらに備えた、請求項5に記載のセンサデバイス。 - 前記少なくとも1つの懸垂脚が原子層堆積によって形成される、請求項9に記載のセンサデバイス。
- 前記CMOS基板から上に向かって延在している少なくとも1つの懸垂脚であって、前記少なくとも1つの吸収体を支持している少なくとも1つの懸垂脚
をさらに備えた、請求項5に記載のセンサデバイス。 - 前記少なくとも1つの懸垂脚が原子層堆積によって形成される、請求項11に記載のセンサデバイス。
- 前記少なくとも1つの反射型コンポーネントが複数の反射型コンポーネントを備え、
前記少なくとも1つの吸収体が原子層堆積によって形成された複数の吸収体を備えた
請求項5に記載のセンサデバイス。 - 前記少なくとも1つの吸収体が、チタンおよび白金からなる金属およびそれらの合金のグループのうちの少なくとも1つから形成される、請求項5に記載のセンサデバイス。
- 相補性金属酸化膜半導体(CMOS)基板と、
前記基板の上に形成された少なくとも1つの反射型コンポーネントと、
前記少なくとも1つの反射型コンポーネントから間隔を隔てて配置された少なくとも1つの吸収体であって、最大厚さが50nm未満であり、良好な雑音等価温度差(NETD)を示す少なくとも1つの吸収体と
を備えた相補性金属酸化膜半導体(CMOS)センサデバイス。 - 前記少なくとも1つの吸収体が原子層堆積によって形成される、請求項15に記載のセンサデバイス。
- 前記少なくとも1つの吸収体が約10nmの最大厚さを有する、請求項16に記載のセンサデバイス。
- 前記少なくとも1つの吸収体が前記少なくとも1つの反射型コンポーネントから約2.5μmだけ間隔を隔てた、請求項15に記載のセンサデバイス。
- 前記少なくとも1つの反射型コンポーネントの上方で前記少なくとも1つの吸収体を支持している少なくとも1つの懸垂脚
をさらに備えた、請求項15に記載のセンサデバイス。 - 前記少なくとも1つの懸垂脚が原子層堆積によって形成される、請求項19に記載のセンサデバイス。
- 前記少なくとも1つの反射型コンポーネントが複数の反射型コンポーネントを備え、
前記少なくとも1つの吸収体が原子層堆積によって形成された複数の吸収体を備えた
請求項20に記載のセンサデバイス。 - 前記少なくとも1つの吸収体が、チタンおよび白金からなる金属およびそれらの合金のグループのうちの少なくとも1つから形成される、請求項15に記載のセンサデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/349,860 US7842533B2 (en) | 2009-01-07 | 2009-01-07 | Electromagnetic radiation sensor and method of manufacture |
US12/349,860 | 2009-01-07 | ||
PCT/US2010/020237 WO2010080815A1 (en) | 2009-01-07 | 2010-01-06 | Electromagnetic radiation sensor and method of manufacture |
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JP2012514753A true JP2012514753A (ja) | 2012-06-28 |
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JP2011545406A Pending JP2012514753A (ja) | 2009-01-07 | 2010-01-06 | 電磁放射センサおよび製造方法 |
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US (1) | US7842533B2 (ja) |
EP (1) | EP2386116B1 (ja) |
JP (1) | JP2012514753A (ja) |
KR (1) | KR101698218B1 (ja) |
CN (1) | CN102326255B (ja) |
BR (1) | BRPI1006124B1 (ja) |
CA (1) | CA2748969C (ja) |
MX (1) | MX2011007280A (ja) |
WO (1) | WO2010080815A1 (ja) |
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JP2015531868A (ja) * | 2012-08-22 | 2015-11-05 | ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングRobert Bosch Gmbh | Cmosボロメータ |
CN106989828A (zh) * | 2016-01-20 | 2017-07-28 | 优利斯公司 | 制造具有微囊的电磁辐射探测器的方法 |
KR102057714B1 (ko) | 2017-05-02 | 2019-12-19 | 꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스 | 박층의 이동에 의해 캡슐화된 전자기 방사선 검출기 및 전자기 방사선 검출기의 적어도 하나의 감응 소자를 캡슐화하는 방법 |
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US10006810B2 (en) | 2014-10-10 | 2018-06-26 | Robert Bosch Gmbh | Method to modulate the sensitivity of a bolometer via negative interference |
US10171919B2 (en) * | 2016-05-16 | 2019-01-01 | The Regents Of The University Of Colorado, A Body Corporate | Thermal and thermoacoustic nanodevices and methods of making and using same |
CN108458789A (zh) * | 2018-04-20 | 2018-08-28 | 国家纳米科学中心 | 一种基于硫化钽薄膜的测辐射热计及其制备方法和用途 |
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KR102057714B1 (ko) | 2017-05-02 | 2019-12-19 | 꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스 | 박층의 이동에 의해 캡슐화된 전자기 방사선 검출기 및 전자기 방사선 검출기의 적어도 하나의 감응 소자를 캡슐화하는 방법 |
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KR20110107366A (ko) | 2011-09-30 |
US7842533B2 (en) | 2010-11-30 |
US20100171190A1 (en) | 2010-07-08 |
MX2011007280A (es) | 2011-09-01 |
BRPI1006124A2 (pt) | 2016-06-28 |
WO2010080815A1 (en) | 2010-07-15 |
EP2386116A1 (en) | 2011-11-16 |
EP2386116B1 (en) | 2017-08-30 |
BRPI1006124B1 (pt) | 2020-03-10 |
CN102326255A (zh) | 2012-01-18 |
CA2748969C (en) | 2018-04-03 |
CN102326255B (zh) | 2015-11-25 |
CA2748969A1 (en) | 2010-07-15 |
KR101698218B1 (ko) | 2017-01-19 |
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