JP2012203064A - 表示装置 - Google Patents
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- JP2012203064A JP2012203064A JP2011065272A JP2011065272A JP2012203064A JP 2012203064 A JP2012203064 A JP 2012203064A JP 2011065272 A JP2011065272 A JP 2011065272A JP 2011065272 A JP2011065272 A JP 2011065272A JP 2012203064 A JP2012203064 A JP 2012203064A
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000010408 film Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 20
- 238000005401 electroluminescence Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 14
- 238000007599 discharging Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 230000003068 static effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- -1 for example Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
【解決手段】
一実施形態による表示装置は、絶縁性の基板と、前記基板の一主面に設けられ、複数のゲート線、複数の信号線、複数の電源線、マトリクス状に配置された複数の画素を有する表示領域と、表示領域上に設けられた有機EL層と、を備え、前記画素は、駆動トランジスタと、抵抗体とを有し、前記抵抗体の一端は前記駆動トランジスタのゲート電極と接続されており、他端は少なくとも前記ゲート線、前記信号線、前記電源線のいずれかと接続されている。
【選択図】図3
Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。表示装置としては、アクティブマトリクス型有機EL表示装置を用いる。
第1の実施形態に係る表示装置について説明する。
図4は、第2の実施形態に係るアクティブマトリクス型表示装置の画素構成を示す図である。第2の実施形態では、放電用抵抗体50として放電用ダイオード51を用いる。放電用ダイオード51のアノードは駆動トランジスタ12のゲート電極と接続されており、カソードは電源線と接続されている。表示装置の駆動時は、電源線の電位は信号電位よりも高くなるため、前記ダイオードは保持特性を低下させない。このような構成においても、第1の実施形態と同様に、プロセス中の静電気によって駆動トランジスタ12の特性が変化するのを防止することができる。
図5は、第3の実施形態に係るアクティブマトリクス型表示装置の画素構成を示す図である。第3の実施形態では、放電用ダイオード51として放電用トランジスタ52を用いている。放電用トランジスタ52のゲート電極およびドレイン電極は駆動トランジスタ12のゲート電極に接続されており、放電用トランジスタ52のゲート電極およびドレイン電極は導通している。また、放電用トランジスタ52のソース電極は電源線に接続されている。
本実施形態においては、基板110として可塑性の基板を用いる。基板110は可塑性であるため、表示装置を製造する際には、支持基板130上の接着層131に基板110が仮接着され、この状態で基板110上に薄膜トランジスタ10などのアレイや表示素子が形成される。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
その他、本発明の思想の範疇において、当業者であれば、各種の変更例及び修正例に想到し得るものであり、それら変更例及び修正例についても本発明の範囲に属するものと了解される。
Claims (7)
- 絶縁性の基板と、
前記基板の一主面に設けられ、複数のゲート線、複数の信号線、複数の電源線、マトリクス状に配置された複数の画素を有する表示領域と、
表示領域上に設けられた有機EL層と、を備え、
前記画素は、駆動トランジスタと、抵抗体とを有し、
前記抵抗体の一端は前記駆動トランジスタのゲート電極と接続されており、他端は少なくとも前記ゲート線、前記信号線、前記電源線のいずれかと接続されている表示装置。 - 前記ダイオードはトランジスタから形成される、請求項1に記載の表示装置。
- 前記トランジスタは半導体層で形成される請求項2に記載の表示装置。
- 前記抵抗体はダイオードで形成される、請求項1に記載の表示装置。
- 前記ダイオードは、アノードが前記駆動トランジスタのゲート電極と接続され、カソードが前記電源線に接続される、請求項4に記載の表示装置。
- 前記半導体層は酸化物半導体からなる、請求項3に記載の表示装置。
- 前記絶縁性の基板は、可塑性を有することを特徴とする、請求項1乃至請求項6に記載の表示装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011065272A JP5639514B2 (ja) | 2011-03-24 | 2011-03-24 | 表示装置 |
US13/238,339 US8872738B2 (en) | 2011-03-24 | 2011-09-21 | Display device |
CN201110285393.1A CN102693999B (zh) | 2011-03-24 | 2011-09-23 | 显示装置 |
KR1020110096126A KR101354745B1 (ko) | 2011-03-24 | 2011-09-23 | 표시 장치 |
TW100134624A TW201240075A (en) | 2011-03-24 | 2011-09-26 | Display device |
KR1020130070936A KR101445492B1 (ko) | 2011-03-24 | 2013-06-20 | 표시 장치의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011065272A JP5639514B2 (ja) | 2011-03-24 | 2011-03-24 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012203064A true JP2012203064A (ja) | 2012-10-22 |
JP5639514B2 JP5639514B2 (ja) | 2014-12-10 |
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JP2011065272A Expired - Fee Related JP5639514B2 (ja) | 2011-03-24 | 2011-03-24 | 表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8872738B2 (ja) |
JP (1) | JP5639514B2 (ja) |
KR (2) | KR101354745B1 (ja) |
CN (1) | CN102693999B (ja) |
TW (1) | TW201240075A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130234919A1 (en) * | 2012-03-06 | 2013-09-12 | Apple Inc. | Devices and methods for discharging pixels having oxide thin-film transistors |
KR101967407B1 (ko) * | 2012-10-08 | 2019-04-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN103840089B (zh) | 2012-11-20 | 2016-12-21 | 群康科技(深圳)有限公司 | 有机发光二极管装置及其显示面板 |
KR101398448B1 (ko) | 2012-11-29 | 2014-05-30 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20180088550A (ko) * | 2017-01-26 | 2018-08-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112652270B (zh) * | 2020-12-28 | 2021-11-23 | 武汉天马微电子有限公司 | 像素电路、显示面板及显示装置 |
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JP4123411B2 (ja) | 2002-03-26 | 2008-07-23 | 株式会社半導体エネルギー研究所 | 発光装置 |
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JP5783796B2 (ja) * | 2010-05-26 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
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2011
- 2011-03-24 JP JP2011065272A patent/JP5639514B2/ja not_active Expired - Fee Related
- 2011-09-21 US US13/238,339 patent/US8872738B2/en not_active Expired - Fee Related
- 2011-09-23 CN CN201110285393.1A patent/CN102693999B/zh not_active Expired - Fee Related
- 2011-09-23 KR KR1020110096126A patent/KR101354745B1/ko not_active IP Right Cessation
- 2011-09-26 TW TW100134624A patent/TW201240075A/zh unknown
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JP2001284623A (ja) * | 1999-09-27 | 2001-10-12 | Matsushita Electric Works Ltd | 光応答型半導体スイッチ |
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Also Published As
Publication number | Publication date |
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KR101354745B1 (ko) | 2014-01-22 |
US20120242562A1 (en) | 2012-09-27 |
JP5639514B2 (ja) | 2014-12-10 |
TW201240075A (en) | 2012-10-01 |
KR101445492B1 (ko) | 2014-09-26 |
KR20120108900A (ko) | 2012-10-05 |
US8872738B2 (en) | 2014-10-28 |
CN102693999A (zh) | 2012-09-26 |
CN102693999B (zh) | 2015-11-18 |
KR20130086582A (ko) | 2013-08-02 |
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