JP2012138442A - ポリッシング装置およびポリッシング方法 - Google Patents
ポリッシング装置およびポリッシング方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 255
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 272
- 230000003287 optical effect Effects 0.000 claims abstract description 243
- 230000002093 peripheral effect Effects 0.000 claims abstract description 78
- 238000001228 spectrum Methods 0.000 claims abstract description 40
- 238000012545 processing Methods 0.000 claims abstract description 26
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 141
- 238000005259 measurement Methods 0.000 description 31
- 239000007788 liquid Substances 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000012788 optical film Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
【解決手段】ポリッシング装置は、基板Wの表面を研磨パッド22に対して押圧するトップリング24と、光源16a,16bからの光を基板Wの表面に照射し、基板Wからの反射光を受光する第一の光学ヘッド13Aおよび第二の光学ヘッド13Bと、反射光の各波長での強度を測定する分光器14a,14bと、反射光の強度と波長との関係を示すスペクトルを生成する処理部15とを備える。第一の光学ヘッド13Aは、トップリング24に保持された基板Wの中心に対向するように配置され、第二の光学ヘッド13Bは、トップリング24に保持された基板Wの周縁部に対向するように配置されている。
【選択図】図6
Description
本発明の好ましい態様は、前記第二の光学ヘッドは、前記研磨テーブルの半径方向に関して、前記第一の光学ヘッドよりも内側に配置されていることを特徴とする。
本発明の好ましい態様は、前記第一の光学ヘッドと前記第二の光学ヘッドは、前記研磨テーブルの周方向において異なる位置に配置されていることを特徴とする。
本発明の好ましい態様は、前記第二の光学ヘッドは、前記研磨テーブルの外側に配置されていることを特徴とする。
本発明の好ましい態様は、前記トップリングは、前記基板の中心部および周縁部を前記研磨パッドに対して独立に押し付ける機構を有しており、前記ポリッシング装置は、前記基板の前記中心部における膜厚と、前記基板の前記周縁部における膜厚に基づいて、前記基板の前記中心部および前記周縁部に対する前記トップリングの荷重を決定する制御部をさらに備えたことを特徴とする。
本発明の好ましい態様は、前記第一の光学ヘッドおよび前記第二の光学ヘッドは、略一定の時間間隔で交互に前記基板の表面に光を照射し、かつ前記基板からの反射光を受光することを特徴とする。
本発明の好ましい態様は、前記基板の周縁部は、該基板の最も外側にある環状の部位であり、その幅は10mm〜20mmであること特徴とする。
12,12a,12b 受光部
13A,13B,13C 光学ヘッド
14,14a,14b 分光器
15 処理部
16,16a,16b 光源
20 研磨テーブル
22 研磨パッド
24 トップリング
25 研磨液供給機構
28 トップリングシャフト
30A,30B 孔
31A,31B 通孔
32 ロータリージョイント
33 液体供給路
34 液体排出路
35 液体供給源
40A,40B 光スイッチ
45A,45B 透明窓
Claims (12)
- 膜を有する基板を研磨パッドに摺接させて該基板を研磨するポリッシング装置であって、
前記研磨パッドを保持するための回転可能な研磨テーブルと、
前記基板を保持し、該基板の表面を前記研磨パッドに対して押圧するトップリングと、
光を発する少なくとも1つの光源と、
前記光源からの光を前記基板の表面に照射し、前記基板からの反射光を受光する第一の光学ヘッドと、
前記光源からの光を前記基板の表面に照射し、前記基板からの反射光を受光する第二の光学ヘッドと、
前記第一の光学ヘッドおよび前記第二の光学ヘッドにより受光された反射光の各波長での強度を測定する少なくとも1つの分光器と、
前記分光器により測定された反射光の各波長での強度から、反射光の強度と波長との関係を示すスペクトルを生成し、該スペクトルから前記基板の膜厚を決定する処理部とを備え、
前記第一の光学ヘッドは、前記トップリングに保持された前記基板の中心に対向するように配置され、
前記第二の光学ヘッドは、前記トップリングに保持された前記基板の周縁部に対向するように配置されていることを特徴とするポリッシング装置。 - 前記第二の光学ヘッドは、前記研磨テーブルの半径方向に関して、前記第一の光学ヘッドよりも外側に配置されていることを特徴とする請求項1に記載のポリッシング装置。
- 前記第二の光学ヘッドは、前記研磨テーブルの半径方向に関して、前記第一の光学ヘッドよりも内側に配置されていることを特徴とする請求項1に記載のポリッシング装置。
- 前記第一の光学ヘッドと前記第二の光学ヘッドは、前記研磨テーブルの周方向において異なる位置に配置されていることを特徴とする請求項1に記載のポリッシング装置。
- 前記第一の光学ヘッドと前記研磨テーブルの中心とを結ぶ線と、前記第二の光学ヘッドと前記研磨テーブルの中心とを結ぶ線とがなす角度は実質的に180度であることを特徴とする請求項1に記載のポリッシング装置。
- 前記第二の光学ヘッドは、前記研磨テーブルの外側に配置されていることを特徴とする請求項1に記載のポリッシング装置。
- 前記トップリングは、前記基板の中心部および周縁部を前記研磨パッドに対して独立に押し付ける機構を有しており、
前記ポリッシング装置は、前記基板の前記中心部における膜厚と、前記基板の前記周縁部における膜厚に基づいて、前記基板の前記中心部および前記周縁部に対する前記トップリングの荷重を決定する制御部をさらに備えたことを特徴とする請求項1に記載のポリッシング装置。 - 膜を有する基板を研磨パッドに摺接させて該基板を研磨するポリッシング装置であって、
前記研磨パッドを保持するための回転可能な研磨テーブルと、
前記基板を保持し、該基板を前記研磨パッドに対して押圧するトップリングと、
前記基板の膜厚を測定する第一の膜厚センサおよび第二の膜厚センサとを備え、
前記第一の膜厚センサは、前記トップリングに保持された前記基板の中心に対向するように配置され、
前記第二の膜厚センサは、前記トップリングに保持された前記基板の周縁部に対向するように配置されていることを特徴とするポリッシング装置。 - 膜を有する基板を研磨パッドに摺接させて該基板を研磨するポリッシング方法であって、
前記研磨パッドを保持する研磨テーブルを回転させ、
前記回転する研磨パッドに対して前記基板の表面を押圧し、
前記基板の中心に対向するように配置された第一の光学ヘッドにより、前記基板の表面に光を照射し、かつ前記基板からの反射光を受光し、
前記基板の周縁部に対向するように配置された第二の光学ヘッドにより、前記基板の表面に光を照射し、かつ前記基板からの反射光を受光し、
前記第一の光学ヘッドおよび前記第二の光学ヘッドにより受光された反射光の各波長での強度を測定し、
測定された強度から、反射光の強度と波長との関係を示すスペクトルを生成し、
前記スペクトルから前記基板の膜厚を決定することを特徴とするポリッシング方法。 - 前記第一の光学ヘッドおよび前記第二の光学ヘッドは、異なる時間に前記基板の表面に光を照射し、かつ前記基板からの反射光を受光することを特徴とする請求項9に記載のポリッシング方法。
- 前記第一の光学ヘッドおよび前記第二の光学ヘッドは、略一定の時間間隔で交互に前記基板の表面に光を照射し、かつ前記基板からの反射光を受光することを特徴とする請求項9に記載のポリッシング方法。
- 前記基板の周縁部は、該基板の最も外側にある環状の部位であり、その幅は10mm〜20mmであること特徴とする請求項9に記載のポリッシング方法。
Priority Applications (16)
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JP2010289209A JP5980476B2 (ja) | 2010-12-27 | 2010-12-27 | ポリッシング装置およびポリッシング方法 |
US13/330,881 US9401293B2 (en) | 2010-12-27 | 2011-12-20 | Polishing apparatus and polishing method |
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TW107118720A TWI702668B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
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JP2016146959A JP6208299B2 (ja) | 2010-12-27 | 2016-07-27 | ポリッシング装置 |
KR1020170061009A KR101868503B1 (ko) | 2010-12-27 | 2017-05-17 | 폴리싱 장치 및 폴리싱 방법 |
US15/949,960 US10343255B2 (en) | 2010-12-27 | 2018-04-10 | Polishing apparatus |
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Also Published As
Publication number | Publication date |
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KR20120074227A (ko) | 2012-07-05 |
US20150332943A1 (en) | 2015-11-19 |
TW202042322A (zh) | 2020-11-16 |
TW202042323A (zh) | 2020-11-16 |
US20120164917A1 (en) | 2012-06-28 |
TWI724945B (zh) | 2021-04-11 |
KR20180048490A (ko) | 2018-05-10 |
TWI729884B (zh) | 2021-06-01 |
JP5980476B2 (ja) | 2016-08-31 |
TW201834105A (zh) | 2018-09-16 |
KR101739074B1 (ko) | 2017-05-23 |
KR20190038772A (ko) | 2019-04-09 |
TWI538076B (zh) | 2016-06-11 |
US20160325399A1 (en) | 2016-11-10 |
TW201631681A (zh) | 2016-09-01 |
KR102017770B1 (ko) | 2019-09-03 |
US20180229346A1 (en) | 2018-08-16 |
KR101868503B1 (ko) | 2018-06-19 |
JP2016184770A (ja) | 2016-10-20 |
TW201236098A (en) | 2012-09-01 |
KR101966274B1 (ko) | 2019-04-05 |
KR20190038771A (ko) | 2019-04-09 |
JP6208299B2 (ja) | 2017-10-04 |
TWI629735B (zh) | 2018-07-11 |
US10343255B2 (en) | 2019-07-09 |
KR102025784B1 (ko) | 2019-09-26 |
TWI702668B (zh) | 2020-08-21 |
US9969048B2 (en) | 2018-05-15 |
KR20170058893A (ko) | 2017-05-29 |
US9401293B2 (en) | 2016-07-26 |
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