JP2012064971A - 被処理体の加熱冷却方法 - Google Patents
被処理体の加熱冷却方法 Download PDFInfo
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Abstract
【解決手段】基板ステージ2に設けた正負一対の吸着電極14a乃至14d間に所定の電圧を印加して基板Wを静電吸着し、基板ステージ2に組み込んだ加熱手段または冷却手段により基板を所定の温度に加熱または冷却する。基板の温度が所定の温度に達するまでの間に、この吸着電極の印加電圧を三角パルス状に変化させ、この印加電圧が低くなるときに吸着電極と被処理体とを実質的に縁切りする。
【選択図】図3
Description
の加熱冷却方法が特許文献2で知られている。
1a 処理室
2 基板ステージ
2a 基板載置面
12 加熱手段
13 冷媒循環路(冷却手段)
14a乃至14d 吸着電極
15 チャック電源装置
A1 吸着領域
A2 周辺領域
W 基板
Claims (2)
- 吸着電極に所定の電圧を印加して被処理体を静電吸着する工程と、この静電吸着した被処理体を加熱冷却体により所定の温度に加熱または冷却する工程とを含み、
被処理体の温度が所定の温度に達するまでの間、この吸着電極の印加電圧を三角パルス状に変化させ、この印加電圧が低くなるときに吸着電極と被処理体とを実質的に縁切りすることを特徴とする被処理体の加熱冷却方法。 - 前記吸着電極への印加電圧を段階的に増加することを特徴とする請求項1記載の被処理体の加熱冷却方法。
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JP2011264934A JP5348673B2 (ja) | 2011-12-02 | 2011-12-02 | 被処理体の加熱冷却方法 |
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JP2011264934A JP5348673B2 (ja) | 2011-12-02 | 2011-12-02 | 被処理体の加熱冷却方法 |
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JP2007120710A Division JP2008277609A (ja) | 2007-05-01 | 2007-05-01 | 被処理体の加熱冷却方法 |
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JP2012064971A true JP2012064971A (ja) | 2012-03-29 |
JP5348673B2 JP5348673B2 (ja) | 2013-11-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9190308B2 (en) | 2013-07-05 | 2015-11-17 | Nissin Ion Equipment Co., Ltd. | Electrostatic chuck system and semiconductor fabrication device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250579A (ja) * | 1995-03-14 | 1996-09-27 | Mitsubishi Electric Corp | 半導体製造装置の静電チャック用電源および半導体製造装置 |
JP2000260855A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | ウェハ処理装置 |
JP2005277074A (ja) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | ウェハ支持部材とその製造方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250579A (ja) * | 1995-03-14 | 1996-09-27 | Mitsubishi Electric Corp | 半導体製造装置の静電チャック用電源および半導体製造装置 |
JP2000260855A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | ウェハ処理装置 |
JP2005277074A (ja) * | 2004-03-24 | 2005-10-06 | Kyocera Corp | ウェハ支持部材とその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9190308B2 (en) | 2013-07-05 | 2015-11-17 | Nissin Ion Equipment Co., Ltd. | Electrostatic chuck system and semiconductor fabrication device |
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