JP2012038933A - 洗浄装置、洗浄方法及び組成物 - Google Patents
洗浄装置、洗浄方法及び組成物 Download PDFInfo
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- JP2012038933A JP2012038933A JP2010177988A JP2010177988A JP2012038933A JP 2012038933 A JP2012038933 A JP 2012038933A JP 2010177988 A JP2010177988 A JP 2010177988A JP 2010177988 A JP2010177988 A JP 2010177988A JP 2012038933 A JP2012038933 A JP 2012038933A
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- cleaning
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- wafer
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- dicing tape
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
【解決手段】本発明の洗浄装置は、支持膜が接着されている基板を洗浄する洗浄装置であって、上記支持膜の上記基板が接着されている側の面における、上記基板が接着されていない露出面に保護膜を形成する保護膜形成手段と、上記保護膜が形成された支持膜に接着されている上記基板を洗浄液で洗浄する洗浄手段とを備える。
【選択図】図1
Description
本実施形態において、洗浄処理の対象となる被処理体は、支持膜であるダイシングテープに接着されたウエハ(基板)である。ウエハは回路(素子)が形成された基板であり、半導体など従来公知の材質の基板を用いることができる。
図1は、本発明の一実施形態に係る洗浄装置80の構成を示す上面図である。
本実施形態に係る組成物は、保護膜を形成するための組成物である。本実施形態の組成物は、洗浄液に不溶な材料からなる構成であれば特に限定されないが、水溶性の材料からなることがより好ましい。そのような保護膜の材料としては、例えば、アクリル系樹脂、ビニル系樹脂、セルロース系樹脂、及びアミド系樹脂の中から選ばれる少なくとも1種の水溶性樹脂を用いることができる。
洗浄液としては、非水溶媒を含む限り特に限定されるものではなく、例えば、後述するp−メンタン等のテルペン系溶剤を用いたの公知の洗浄液を用いることができる。
接着剤としては、接着性を有する樹脂を含んでいれば特に限定されないが、他にフィラーを含んでいてもよい。
接着剤を溶解するための溶剤としては、特に限定されないが、例えば、ヘキサン、ヘプタン、オクタン、ノナン、メチルオクタン、デカン、ウンデカン、ドデカン、トリデカン等の直鎖状の炭化水素、炭素数3から15の分岐状の炭化水素;ゲラニオール、ネロール、リナロール、シトラール、シトロネロール、p−メンタン、o−メンタン、m−メンタン、ジフェニルメンタン、メントール、イソメントール、ネオメントール、リモネン、α−テルピネン、β−テルピネン、γ−テルピネン、α−テルピネオール、β−テルピネオール、γ−テルピネオール、テルピネン−1−オール、テルピネン−4−オール、1,4−テルピン、1,8−テルピン、カルボン、ヨノン、ツヨン、カンファー、ボルナン、ボルネオール、ノルボルナン、ピナン、α−ピネン、β−ピネン、ツジャン、α−ツジョン、β−ツジョン、カラン、ショウノウ、ロンギホレン、1,4−シネオール、1,8−シネオール等のモノテルペン類、アビエタン、アビエチン酸等のジテルペン類、等の環状の炭化水素(テルペン類)が挙げられる。
次に、本発明の一実施形態に係る洗浄方法について、図2を参照して説明する。図2は、本発明の一実施形態に係る洗浄方法の処理の流れを示す図である。
実施例1では、図3に示すように、ウエハ20に固定され、何ら処理を施していないダイシングテープ21(図3の(a))、保護膜を形成せずに洗浄液をかけた後のダイシングテープ21(図3の(b))、保護膜22で保護した上で洗浄液をかけた後のダイシングテープ21(図3の(c))、及び形成した保護膜22を水によって除去した後のダイシングテープ21(図3の(d))を用意し、それぞれの接着強度を測定した。図3は、実施例1において用意したダイシングテープの接着強度を測定する様子を示す図である。
実施例2では、ダイシングテープに洗浄液を接触させたときの、保護膜の有無によるダイシングテープの膨潤度合いを比較した。図6は、実施例2において、ダイシングテープに洗浄液を接触させたときの、保護膜の有無によるダイシングテープの膨潤度合いを比較する図である。
実施例3では、接着剤をコーティングしたウエハにフィラー(ポリオルガノシルセスシロキサン(RSi3/2)n の三次元架橋品であるシリコーンレジンパウダー(「KMP−701」(製品名);粒径3.5μm、粒度分布1〜6μm、信越化学社製))を塗布し、洗浄液に対する流れ再現性を確認した。図7は、接着剤の上に残存しているフィラーの流れ再現性を確認する様子を示す図である。
比較例1では、ダイシングテープに保護膜を形成せずにウエハに残存している付着物を洗浄した。具体的には、ダイシングテープに支持されたウエハ(6インチ Bare(BGなし))の表面に接着剤(TZNR(登録商標)−A3003(東京応化工業株式会社製)、20μm)及びフィラー(ポリオルガノシルセスシロキサン(RSi3/2)n の三次元架橋品であるシリコーンレジンパウダー(「KMP−701」(製品名);粒径3.5μm、粒度分布1〜6μm、信越化学社製))をコーティングした。このように作製した被処理体にノズルからp−メンタンを吐出し、2000rpmで5分間スピン洗浄した。
実施例4では、ダイシングテープを保護膜によって保護した以外は比較例1と同様の方法によりウエハを洗浄した。保護膜は、ポリビニルアルコールを含む水溶液(14質量%)をスピン塗布(1000rpm、2分間)してコーティングして形成した。
2 ダイシングテープ
3 ダイシングフレーム
4 保護膜形成手段
5 第1の洗浄手段(洗浄手段)
6 第2の洗浄手段(除去手段)
8 被処理体収納部
40 搬送手段
50 塗布ユニット
54 剥離ユニット(剥離手段)
60 除去ユニット
80 洗浄装置
Claims (11)
- 支持膜が接着されている基板を洗浄する洗浄装置であって、
上記支持膜の上記基板が接着されている側の面における、上記基板が接着されていない露出面に保護膜を形成する保護膜形成手段と、
上記保護膜が形成された支持膜に接着されている上記基板を洗浄液で洗浄する洗浄手段とを備えることを特徴とする洗浄装置。 - 上記支持膜が接着されている側の面とは反対側の面に接着剤を介して支持板が接着された上記基板から、上記支持板を剥離する剥離手段をさらに備え、
上記洗浄手段は、上記剥離手段によって上記支持板が剥離された上記基板上に残存している付着物を除去するようになっていることを特徴とする請求項1に記載の洗浄装置。 - 上記洗浄手段は、上記洗浄液を上記基板上に吐出するようになっていることを特徴とする請求項1又は2に記載の洗浄装置。
- 上記保護膜は、上記洗浄液に不溶な材料からなることを特徴とする請求項1から3のいずれか1項に記載の洗浄装置。
- 上記保護膜を除去する除去手段をさらに備えることを特徴とする請求項1から4のいずれか1項に記載の洗浄装置。
- 上記洗浄液は非水溶媒を含み、
上記保護膜は上記洗浄液に不溶で且つ水溶性の材料からなり、
上記保護膜を除去する除去手段をさらに備え、
上記除去手段は、水を保護膜に吐出するようになっていることを特徴とする請求項1から3のいずれか1項に記載の洗浄装置。 - 支持膜が接着されている基板を洗浄する洗浄方法であって、
上記支持膜の上記基板が接着されている側の面における、上記基板が接着されていない露出面に保護膜を形成する保護膜形成工程と、
上記保護膜形成工程後に、上記基板を洗浄液で洗浄する洗浄工程とを含むことを特徴とする洗浄方法。 - 上記支持膜が接着されている側の面とは反対側の面に接着剤を介して支持板が接着された上記基板から、上記洗浄工程前に、上記支持膜を剥離する剥離工程をさらに含み、
上記洗浄工程では、上記剥離工程後に上記基板上に残存している付着物を除去することを特徴とする請求項7に記載の洗浄方法。 - 請求項1から6のいずれか1項に記載の洗浄装置で用いられる、保護膜を形成するための組成物であって、
基板を洗浄するための洗浄液に不溶な材料を含む組成物。 - 上記材料が水溶性である請求項9に記載の組成物。
- 上記材料がポリビニルアルコールである請求項10に記載の組成物。
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