JP2011061142A - レジスト塗布現像装置およびレジスト塗布現像方法 - Google Patents
レジスト塗布現像装置およびレジスト塗布現像方法 Download PDFInfo
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
【解決手段】レジスト塗布現像装置1は、基板W上にレジストを塗布してレジスト膜を形成するレジスト膜形成部と、露光されたレジスト膜を現像するレジスト現像部18と、レジスト膜に対して溶解性を有する溶剤の蒸気またはガスを含む気体を生成する溶剤気体生成部と、気体生成部により生成された気体を調整する溶剤気体調整部と、レジスト現像部18で現像されてパターン化されたレジスト膜を有する基板が収容される減圧維持可能な処理室62であって、収容される基板Wに向けて、溶剤気体調整部により調整された気体を供給する供給部を含む当該処理室62と、処理室を減圧に排気する排気部とを備える。
【選択図】図1
Description
図1に示すように、レジスト塗布現像装置1は、カセットステーション2、処理ステーション3、およびインターフェイス部4を有している。
また、方形導管部65C2には図5に示すように熱電対TCが設けられ、これにより、方形導管部65C2(ミスト除去ノズル65C)の温度を制御することが可能となる。
先ず、ウエハ搬送体7(図1)によって、カセットCから未処理のウエハWが1枚取り出され、第3の処理装置群G3のエクステンション装置32(図3)に搬送される。次にウエハWは、主搬送装置13によって第3の処理装置群G3のアドヒージョン装置31に搬入され、ウエハWに対するレジスト液の密着性を向上させるため、ウエハWに例えばHMDSが塗布される。次に、ウエハWはクーリング装置30に搬送され、所定の温度に冷却された後、レジスト塗布装置17に搬送される。レジスト塗布装置17では、ウエハW上にレジスト液が回転塗布され、レジスト膜が形成される。
レジスト膜処理の終了後、ウエハWをサセプタ62S上に載置したまま、サセプタ62内の加熱部62Hにより、サセプタ62Sおよびその上のウエハWが加熱される。このときの温度は、例えば約70℃から約130℃までの範囲にあって良い。
Claims (11)
- 基板上にレジストを塗布してレジスト膜を形成するレジスト膜形成部と、
露光された前記レジスト膜を現像するレジスト現像部と、
前記レジスト膜に対して溶解性を有する溶剤の蒸気またはガスを含む気体を生成する溶剤気体生成部と、
前記気体生成部により生成された前記気体を調整する溶剤気体調整部と、
前記レジスト現像部で現像されてパターン化された前記レジスト膜を有する基板が収容される減圧維持可能な処理室であって、収容される前記基板に向けて、前記溶剤気体調整部により調整された前記気体を供給する供給部を含む当該処理室と、
前記処理室を減圧に排気する排気部と
を備えるレジスト塗布現像装置。 - 前記溶剤気体生成部の温度が、前記溶剤気体調整部および前記処理室の温度よりも高く設定される、請求項1に記載のレジスト塗布現像装置。
- 前記溶剤気体調整部が、
前記気体生成部により生成された前記気体を流入させる流入管と、
前記流入管の内部断面形状を変換する変換部と、
前記変換部に接続し、前記気体中に含まれるミストを除去するため、前記変換部から流入した前記気体を内面に複数回衝突させるよう構成される導管部と、
を備える、請求項1また2に記載のレジスト塗布現像装置。 - 現像されてパターン化された前記レジスト膜に対して紫外域光を照射する紫外域光光源を更に備える、請求項1から3のいずれか一項に記載のレジスト塗布現像装置。
- 前記処理室が、前記基板を加熱する加熱部を含む、請求項1から4のいずれか一項に記載のレジスト塗布現像装置。
- 前記溶剤が、アセトン、プロピレングリコールモノメチルエーテルアセテート(PGMEA)、およびNメチル2ピロリジノン(NMP)のいずれか又はこれらの二以上の組み合わせである、請求項1から5のいずれか一項に記載のレジスト塗布現像装置。
- 基板上にレジストを塗布してレジスト膜を形成するステップと、
所定のフォトマスクを利用して前記レジスト膜を露光するステップと、
露光された前記レジスト膜を現像してパターン化するステップと、
前記パターン化された前記レジスト膜を有する基板を減圧維持可能な処理室に収容するステップと、
前記レジスト膜に対して溶解性を有する溶剤の蒸気またはガスを含む気体を生成するステップと、
前記気体生成部により生成された前記気体を調整するステップと、
調整された前記気体を前記処理室に収容された前記基板に対して供給するステップと
を含むレジスト塗布現像方法。 - 前記気体を調整するステップが、前記気体を生成するステップにおいて生成された前記気体の温度が下げるステップを含む、請求項7に記載のレジスト塗布現像方法。
- 現像されてパターン化された前記レジスト膜に対して紫外域光を照射するステップを更に含む、請求項7または8に記載のレジスト塗布現像方法。
- 前記気体が供給された前記基板を加熱するステップを更に含む、請求項7から9のいずれか一項に記載のレジスト塗布現像方法。
- 前記溶剤が、アセトン、プロピレングリコールモノメチルエーテルアセテート(PGMEA)、およびNメチル2ピロリジノン(NMP)のいずれか又はこれらの二以上の組み合わせである、請求項7から10のいずれか一項に記載のレジスト塗布現像方法。
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JP2009211818A JP4967004B2 (ja) | 2009-09-14 | 2009-09-14 | レジスト塗布現像装置およびレジスト塗布現像方法 |
US12/878,395 US8411246B2 (en) | 2009-09-14 | 2010-09-09 | Resist coating and developing apparatus and method |
KR1020100089189A KR101195673B1 (ko) | 2009-09-14 | 2010-09-13 | 레지스트 도포 현상 장치 및 레지스트 도포 현상 방법 |
EP10176550A EP2296042A2 (en) | 2009-09-14 | 2010-09-14 | Resist coating and developing apparatus and method |
TW099131067A TWI404121B (zh) | 2009-09-14 | 2010-09-14 | 光阻塗佈顯影裝置及光阻塗佈顯影方法 |
CN201010282254.9A CN102023498B (zh) | 2009-09-14 | 2010-09-14 | 抗蚀剂涂布显影装置和抗蚀剂涂布显影方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013140836A (ja) * | 2011-12-28 | 2013-07-18 | Tokyo Electron Ltd | 基板処理装置、基板処理方法及び記憶媒体 |
JP2013140833A (ja) * | 2011-12-28 | 2013-07-18 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
JP2013179354A (ja) * | 2013-06-05 | 2013-09-09 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2013235901A (ja) * | 2012-05-07 | 2013-11-21 | Tokyo Electron Ltd | 基板処理方法及び記憶媒体 |
US9375748B2 (en) | 2012-07-18 | 2016-06-28 | Screen Semiconductor Solutions Co., Ltd. | Substrate processing apparatus and substrate processing method |
JP2021009981A (ja) * | 2019-07-03 | 2021-01-28 | 株式会社ディスコ | 加工装置 |
Families Citing this family (4)
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Also Published As
Publication number | Publication date |
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TWI404121B (zh) | 2013-08-01 |
EP2296042A2 (en) | 2011-03-16 |
CN102023498A (zh) | 2011-04-20 |
CN102023498B (zh) | 2013-05-08 |
US20110065052A1 (en) | 2011-03-17 |
KR20110029091A (ko) | 2011-03-22 |
US8411246B2 (en) | 2013-04-02 |
KR101195673B1 (ko) | 2012-10-30 |
TW201128685A (en) | 2011-08-16 |
JP4967004B2 (ja) | 2012-07-04 |
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