JP2008042031A - 圧電素子、アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 - Google Patents
圧電素子、アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 Download PDFInfo
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- 239000007788 liquid Substances 0.000 title claims abstract description 28
- 238000002347 injection Methods 0.000 title abstract 4
- 239000007924 injection Substances 0.000 title abstract 4
- 239000013078 crystal Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005315 distribution function Methods 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
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- 238000000034 method Methods 0.000 description 7
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- 239000002245 particle Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910020215 Pb(Mg1/3Nb2/3)O3PbTiO3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000010191 image analysis Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14419—Manifold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14491—Electrical connection
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
【解決手段】基板上に設けられる下電極膜と、下電極膜上に設けられる圧電体層70と、圧電体層70上に設けられる上電極膜80とからなり、圧電体層70が柱状の複数の結晶70aで構成されていると共に、上電極膜80が圧電体層70を構成する各結晶70aの表面形状に沿って形成されているようにする。
【選択図】図3
Description
かかる第1の態様では、上電極膜の圧電体層との密着性が向上するため、圧電素子の繰り返し駆動に伴う上電極膜の剥離、亀裂の発生等を防止することができる。
かかる第2の態様では、上電極膜の結晶が比較的小さいことで、上電極膜と圧電体層の密着性がさらに向上する。
かかる第3の態様では、上電極膜の結晶が比較的小さいことで、上電極膜と圧電体層の密着性がさらに向上する。
かかる第4の態様では、上電極膜の良好な導電性を確保しつつ、上電極膜の圧電体層との密着性を向上することができる。
かかる第5の態様では、上電極膜の良好な導電性を確保しつつ上電極膜の圧電体層との密着性をより確実に向上することができる。
かかる第6の態様では、圧電素子の良好な変位特性を維持しつつ、耐久性を向上したアクチュエータ装置を実現することができる。
かかる第7の態様では、液滴の吐出特性を良好に保持しつつ、耐久性を向上した液体噴射ヘッドを実現することができる。
かかる第8の態様では、信頼性及び耐久性に優れた液体噴射装置を実現することができる。
図1は、本発明の一実施形態に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図及びそのA−A′断面図であり、図3は、圧電素子の結晶状態の概略を示す断面図である。
Claims (8)
- 基板上に設けられる下電極膜と、該下電極膜上に設けられる圧電体層と、該圧電体層上に設けられる上電極膜とからなり、前記圧電体層が柱状の結晶で構成されていると共に前記上電極膜が前記圧電体層の各結晶の表面形状に沿って形成されていることを特徴とする圧電素子。
- 前記圧電体層の平均結晶粒径をmとし、正規分布関数の標準偏差をσとしたとき、前記上電極膜の平均結晶粒径が(m−2σ)の1/4以下であることを特徴とする請求項1に記載の圧電素子。
- 前記上電極膜の平均結晶粒径が(m−2σ)の1/10以下であることを特徴とする請求項2に記載の圧電素子。
- 前記上電極膜の厚みが、10〜200nmであることを特徴とする請求項1〜3の何れかに記載の圧電素子。
- 前記上電極膜が、イリジウム、白金、ルテニウム、パラジウム、ロジウム、レニウム、オスミウム及び金からなる群から選択される少なくとも何れか一種を含む材料からなることを特徴とする請求項1〜4の何れかに記載の圧電素子。
- 請求項1〜5の何れかに記載の圧電素子を撓み変形可能に具備することを特徴とするアクチュエータ装置。
- 請求項6に記載のアクチュエータ装置と、該アクチュエータ装置が一方面側に設けられると共に液滴を吐出するノズル開口に連通する圧力発生室が設けられた流路形成基板とを具備することを特徴とする液体噴射ヘッド。
- 請求項7に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006216132A JP5168443B2 (ja) | 2006-08-08 | 2006-08-08 | 圧電素子、アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 |
US11/835,218 US7731339B2 (en) | 2006-08-08 | 2007-08-07 | Piezoelectric element, actuator device, liquid ejecting head and liquid ejecting apparatus |
US12/767,566 US8366248B2 (en) | 2006-08-08 | 2010-04-26 | Piezoelectric element, actuator device, liquid ejecting head, and liquid ejecting apparatus |
US13/683,591 US8591011B2 (en) | 2006-08-08 | 2012-11-21 | Piezoelectric element, actuator device, liquid ejecting head, and liquid ejecting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006216132A JP5168443B2 (ja) | 2006-08-08 | 2006-08-08 | 圧電素子、アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 |
Publications (2)
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JP2008042031A true JP2008042031A (ja) | 2008-02-21 |
JP5168443B2 JP5168443B2 (ja) | 2013-03-21 |
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JP2006216132A Active JP5168443B2 (ja) | 2006-08-08 | 2006-08-08 | 圧電素子、アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010021375A (ja) * | 2008-07-10 | 2010-01-28 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
JP2011140153A (ja) * | 2010-01-06 | 2011-07-21 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
JP2019155752A (ja) * | 2018-03-14 | 2019-09-19 | 株式会社リコー | ヘッド用振動板部材、液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5168443B2 (ja) * | 2006-08-08 | 2013-03-21 | セイコーエプソン株式会社 | 圧電素子、アクチュエータ装置、液体噴射ヘッド及び液体噴射装置 |
US8348393B2 (en) * | 2008-03-17 | 2013-01-08 | Hewlett-Packard Development Company, L.P. | Print head diaphragm support |
US10883702B2 (en) | 2010-08-31 | 2021-01-05 | Ideal Industries Lighting Llc | Troffer-style fixture |
JP6066612B2 (ja) * | 2012-08-06 | 2017-01-25 | キヤノン株式会社 | 液体吐出ヘッド及びその製造方法 |
JP2014198461A (ja) * | 2013-03-15 | 2014-10-23 | 株式会社リコー | アクチュエータ素子、液滴吐出ヘッド、液滴吐出装置及び画像形成装置 |
JP2019067861A (ja) * | 2017-09-29 | 2019-04-25 | セイコーエプソン株式会社 | 圧電アクチュエーター、圧電駆動装置、ロボット、電子部品搬送装置およびプリンター |
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JP2000052559A (ja) * | 1998-08-12 | 2000-02-22 | Seiko Epson Corp | 圧電アクチュエータ、インクジェット式記録ヘッド、プリンタ、圧電アクチュエータの製造方法およびインクジェット式記録ヘッドの製造方法 |
JP2000079689A (ja) * | 1998-07-01 | 2000-03-21 | Seiko Epson Corp | 機能性薄膜、圧電体素子、インクジェット式記録ヘッド、プリンタ、圧電体素子の製造方法およびインクジェット式記録ヘッドの製造方法、 |
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JP2002043643A (ja) * | 2000-07-24 | 2002-02-08 | Matsushita Electric Ind Co Ltd | 薄膜圧電素子 |
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US8020974B2 (en) * | 2007-01-31 | 2011-09-20 | Panasonic Corporation | Piezoelectric thin film device and piezoelectric thin film device manufacturing method, and inkjet head and inkjet recording apparatus |
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JP2010021375A (ja) * | 2008-07-10 | 2010-01-28 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
CN102225664A (zh) * | 2008-07-10 | 2011-10-26 | 精工爱普生株式会社 | 液体喷射头及液体喷射装置和压电元件 |
JP2011140153A (ja) * | 2010-01-06 | 2011-07-21 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
JP2019155752A (ja) * | 2018-03-14 | 2019-09-19 | 株式会社リコー | ヘッド用振動板部材、液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
JP7087489B2 (ja) | 2018-03-14 | 2022-06-21 | 株式会社リコー | ヘッド用振動板部材、液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
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US20080043069A1 (en) | 2008-02-21 |
US8591011B2 (en) | 2013-11-26 |
US20130083133A1 (en) | 2013-04-04 |
US8366248B2 (en) | 2013-02-05 |
US7731339B2 (en) | 2010-06-08 |
JP5168443B2 (ja) | 2013-03-21 |
US20100201757A1 (en) | 2010-08-12 |
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