JP2007080990A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2007080990A JP2007080990A JP2005264754A JP2005264754A JP2007080990A JP 2007080990 A JP2007080990 A JP 2007080990A JP 2005264754 A JP2005264754 A JP 2005264754A JP 2005264754 A JP2005264754 A JP 2005264754A JP 2007080990 A JP2007080990 A JP 2007080990A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- wire
- emitting device
- light
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45673—Rhodium (Rh) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01031—Gallium [Ga]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10336—Aluminium gallium arsenide [AlGaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10349—Aluminium gallium indium phosphide [AlGaInP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】 半導体発光装置のワイヤーボンディングに使用されているAu線やCu線の表面に反射率を高める物質をコーティングしたAu線やCu線を用いる。このコーティング物資として好ましくはAg、Al,Rhの少なくとも一種あるいはこれらの一種を含む金属を用いる。
【選択図】 図2
Description
即ち、本発明は以下の発明からなる。
(1)発光素子にワイヤーボンディングを有する発光装置において、ワイヤーボンディングのワイヤーに発光素子の発光波長に対して反射率を高める物質でコーティングされた金または銅を主成分とする金属細線を用いたことを特徴とする発光装置。
(2)コーティング物質が、Ag、Al、Rhの少なくとも一種あるいはこれらの少なくとも一種を含む金属であることを特徴とする上記(1)に記載の発光装置。
(3)金属細線の太さが10μm〜1000μmであることを特徴とする上記(1)または(2)に記載の発光装置。
(5)コーティング層の厚さが1nm〜金属細線直径の10%であることを特徴とする上記(1)〜(4)のいずれかに記載の発光装置。
(6)発光素子が載置されるリード面の一部または大部分がAg、Al、Rhの少なくとも一種あるいはこれらを含む金属でコーティングされている事を特徴とする上記(1)〜(5)のいずれかに記載の発光装置。
(7)上記(1)〜(6)に記載の発光装置に発光素子の発光の一部あるいは全部を長波長光に変換する蛍光体を含むことを特徴とする発光装置。
図における6が光の反射率の高い物質でコーティングしたAu線やCu線である。このコーティング物質は、光の反射率がAuやCuより高いものであればよいが、反射率特性上、Ag、Al、Rhの少なくとも一種あるいはこれらの少なくとも一種を含む金属が好ましい。これらの金属を含む場合は50質量%以上含むのがよい。
Au線およびCu線の太さは10μm〜1000μmの範囲が好ましい。砲弾型LEDで用いられているチップは0.3mm角程度であり、金属細線を接続するパッドは100μm角程度であるため、数十μm太さの金属細線が用いられ、一方、パワーモジュール用途の数mmサイズのチップには数百μm太さの金属細線が使われるからである。またコーティング層の厚さは1nm〜金属細線直径の10%の範囲が好ましい。1nm未満では反射率を向上させるには薄すぎ、金属細線直径の10%超ではワイヤーボンディング時の密着性を損なうからである。コーティング方法は真空蒸着法、化学蒸着法(CVD法)、スパッタ法、溶融法、プラズマスプレー法、超音波法、金属粉入り樹脂塗布法、還元法、イオンプレーティング法、などを用いることが出来る。
本発明は、発光ダイオード(LED)、面発光レーザ(VCSEL)、を初めとしたワイヤーボンディングを行うあらゆる発光装置に適用可能である。
本発明は、Au線やCu線の吸収が顕著な紫外〜緑の短波長域で発光するAlGaInN系を初めとする窒化物化合物半導体系、ZnO系を初めとする酸化物化合物半導体系、CdZnSSe系を初めとするセレン化物系、硫化物系化合物半導体系の発光素子に適用する事が望ましい。緑〜赤に発光するAlGaInP系を初めとする燐化物系、AlGaAs系を初めとするヒ素化物系の発光素子に対しても適応に何ら問題はないどころか、青色、緑色発光素子と隣接して配置される、いわゆる3in1パッケージ(3色のチップが1つのパッケージに入っているLEDパッケージ)における赤色発光素子に対して好ましく本発明を適用できる。
本発明は、導電性基板上に積層され、エピ(エピタキシャル)面側と基板裏面に電極を配置し、エピ面側からは1本または複数本のボンディングワイヤーにて、基板側からは導電性接着剤等を介してパッケージの外部リード5に接続するタイプの発光素子に対しても有効である。
また、本発明は、発光素子をサブマウントに載置し、サブマウントから1本または2本以上のワイヤーにてパッケージの外部リードに接続した場合にも有効である。
また、チップサイズは0.2mm角以下〜1mm角を超えるものまで、形状も正方形、長方形、円、楕円などあらゆる大きさ・形の発光素子に効果を発揮する。
本発明は、蛍光体と組み合わせても良い。青色の発光素子に対し、黄色発光の蛍光体を塗布した白色発光素子や、紫外光の発光素子に対し、赤、緑、青の蛍光体を塗布した白色発光素子について適用しても効果が高い。前記塗布の代わりに封止樹脂の中に蛍光体を分散配置することも出来る。この例を図3に示す。図で7が蛍光体を含有させた封止樹脂である。
本発明による反射率を高めるためAgでコーティングしたAu線を表面実装型LEDに適用した例を図2に示す。
LEDチップはサファイア基板上に積層されたAlGaInN系化合物半導体結晶からなり、エピ膜表面側にn電極とp電極が形成されているタイプである。サイズは0.35mm角、高さ0.1mmである。p型透明電極としてITOが形成されており、その一部に不透明なワイヤーボンディング用のパッドが形成されている。n電極はエッチングにより表出させたn型コンタクト層上に形成されており、ここにもワイヤーボンディング用のパッドが形成されている。これらp電極、n電極のパッドの最表面はAuである。
LEDチップは中心軸付近に張り出した片方のインナーリード上に熱硬化樹脂を用いて設置される。オーブンにて熱硬化樹脂を硬化させた後、ワイヤーボンダーにてLEDチップと表面実装型LEDパッケージのインナーリードの間を1対のボンディングワイヤーにて接続した。この際、ボンディングワイヤーは純度4NのAu線の表面を純度4NのAgでコーティングしたワイヤーを使用した。Au線のサイズは直径25μmであり、Agコーティングの厚さは約0.5μmであった。Au線へのAgコーティングは電気メッキにより実施した。
次に、熱硬化性の透明シリコン樹脂にてカップ内を樹脂封止した。オーブンにて樹脂硬化し、表面実装型LEDのサンプルを完成させた。
20mA印加時のAgコーティング無しとAgコーティング有りの光出力の比較を行った。サンプル数は各20点である。Agコーティング無しが平均値15.3mWに対し、Agコーティング有りが16.0mWであった。Agコーティング有りの方が4.6%程、出力が高い。発光波長の平均値はそれぞれ460.1nm、459.9nmであり、波長による差ではない。
2 発光素子
3 封止樹脂
4 成型体
5 リード
6 AgをコーティングしたAu線
7 蛍光体含有封止樹脂
Claims (7)
- 発光素子にワイヤーボンディングを有する発光装置において、ワイヤーボンディングのワイヤーに発光素子の発光波長に対して反射率を高める物質でコーティングされた金または銅を主成分とする金属細線を用いたことを特徴とする発光装置。
- コーティング物質が、Ag、Al、Rhの少なくとも一種あるいはこれらの少なくとも一種を含む金属であることを特徴とする請求項1に記載の発光装置。
- 金属細線の太さが10μm〜1000μmであることを特徴とする請求項1または2に記載の発光装置。
- コーティングが電解メッキ法、無電解メッキ法、真空蒸着法、化学蒸着法(CVD法)、スパッタ法、溶融法、プラズマスプレー法、超音波法、金属粉入り樹脂塗布法、還元法、イオンプレーティング法、のいずれかで形成されたものであることを特徴とする請求項1〜3のいずれかに記載の発光装置。
- コーティング層の厚さが1nm〜金属細線直径の10%であることを特徴とする請求項1〜4のいずれかに記載の発光装置。
- 発光素子が載置されるリード面の一部または大部分がAg、Al、Rhの少なくとも一種あるいはこれらを含む金属でコーティングされている事を特徴とする請求項1〜5のいずれかに記載の発光装置。
- 請求項1〜6に記載の発光装置に発光素子の発光の一部あるいは全部を長波長光に変換する蛍光体を含むことを特徴とする発光装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005264754A JP4918238B2 (ja) | 2005-09-13 | 2005-09-13 | 発光装置 |
EP06798073A EP1925037A4 (en) | 2005-09-13 | 2006-09-12 | LIGHT EMITTING DEVICE |
PCT/JP2006/318462 WO2007032520A1 (en) | 2005-09-13 | 2006-09-12 | Light-emitting device |
KR1020087007978A KR100978028B1 (ko) | 2005-09-13 | 2006-09-12 | 발광장치 |
CN2006800334063A CN101263612B (zh) | 2005-09-13 | 2006-09-12 | 发光器件 |
US12/066,591 US7812358B2 (en) | 2005-09-13 | 2006-09-12 | Light-emitting device |
TW095133877A TW200729547A (en) | 2005-09-13 | 2006-09-13 | Light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005264754A JP4918238B2 (ja) | 2005-09-13 | 2005-09-13 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007080990A true JP2007080990A (ja) | 2007-03-29 |
JP4918238B2 JP4918238B2 (ja) | 2012-04-18 |
Family
ID=37940996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005264754A Expired - Fee Related JP4918238B2 (ja) | 2005-09-13 | 2005-09-13 | 発光装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4918238B2 (ja) |
KR (1) | KR100978028B1 (ja) |
CN (1) | CN101263612B (ja) |
TW (1) | TW200729547A (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009055006A (ja) * | 2007-07-27 | 2009-03-12 | Nichia Corp | 発光装置及びその製造方法 |
WO2010029872A1 (ja) * | 2008-09-09 | 2010-03-18 | 昭和電工株式会社 | 発光装置、発光モジュール、表示装置 |
JP2010067863A (ja) * | 2008-09-11 | 2010-03-25 | Showa Denko Kk | 発光装置、発光モジュール |
JP2010067720A (ja) * | 2008-09-09 | 2010-03-25 | Showa Denko Kk | 発光装置、発光モジュール |
WO2012036246A1 (ja) | 2010-09-15 | 2012-03-22 | 学校法人東京女子医科大学 | 中耳粘膜様細胞シート、その製造方法及びその利用方法 |
WO2012118097A1 (ja) | 2011-02-28 | 2012-09-07 | 株式会社セルシード | ヒアルロン酸産生能を有する細胞シート及びその製造方法 |
JP2013051431A (ja) * | 2012-10-25 | 2013-03-14 | Nichia Chem Ind Ltd | 発光装置 |
JP2013187508A (ja) * | 2012-03-09 | 2013-09-19 | Tatsuta Electric Wire & Cable Co Ltd | Agボンディングワイヤおよびその製造方法 |
KR101380387B1 (ko) | 2007-09-12 | 2014-04-02 | 서울반도체 주식회사 | Led 패키지 |
JP2015026646A (ja) * | 2013-07-24 | 2015-02-05 | 日亜化学工業株式会社 | 発光装置 |
US9024343B2 (en) | 2007-12-28 | 2015-05-05 | Nichia Corporation | Light emitting device |
JP2016086047A (ja) * | 2014-10-24 | 2016-05-19 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017212314A (ja) * | 2016-05-25 | 2017-11-30 | 日亜化学工業株式会社 | 発光装置 |
JP2018186284A (ja) * | 2011-08-22 | 2018-11-22 | エルジー イノテック カンパニー リミテッド | 紫外線発光素子パッケージ |
DE102018124126A1 (de) | 2017-09-28 | 2019-03-28 | Nichia Corporation | Licht-emittierende Vorrichtung |
JP2019068053A (ja) * | 2017-09-28 | 2019-04-25 | 日亜化学工業株式会社 | 発光装置 |
US10533158B2 (en) | 2005-02-28 | 2020-01-14 | Tokai University Educational System | Cultured cell sheet, production method thereof, and application method thereof |
US20210376563A1 (en) * | 2020-05-26 | 2021-12-02 | Excelitas Canada, Inc. | Semiconductor Side Emitting Laser Leadframe Package and Method of Producing Same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI409368B (zh) * | 2010-07-30 | 2013-09-21 | Epistar Corp | 一種發光元件之製造方法 |
CN103390700B (zh) * | 2012-05-10 | 2016-08-03 | 展晶科技(深圳)有限公司 | 发光二极体封装制程及其封装结构 |
KR101296265B1 (ko) * | 2012-06-12 | 2013-08-14 | 순천대학교 산학협력단 | 반도체 발광 소자, 반도체 발광 소자 패키지 및 그 제조 방법 |
TW201742276A (zh) * | 2016-05-31 | 2017-12-01 | 隆達電子股份有限公司 | 接合用導線與半導體封裝結構 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04354387A (ja) * | 1991-05-31 | 1992-12-08 | Iwasaki Electric Co Ltd | 発光ダイオード |
JP2002094122A (ja) * | 2000-07-13 | 2002-03-29 | Matsushita Electric Works Ltd | 光源装置及びその製造方法 |
JP2005039264A (ja) * | 2003-06-30 | 2005-02-10 | Nichia Chem Ind Ltd | 半導体発光素子及びそれを用いた発光装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766235A (ja) * | 1993-08-27 | 1995-03-10 | Tanaka Denshi Kogyo Kk | 半導体素子用複合ボンディングワイヤおよび半導体装置 |
JP2004266124A (ja) * | 2003-03-03 | 2004-09-24 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
-
2005
- 2005-09-13 JP JP2005264754A patent/JP4918238B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-12 KR KR1020087007978A patent/KR100978028B1/ko not_active IP Right Cessation
- 2006-09-12 CN CN2006800334063A patent/CN101263612B/zh not_active Expired - Fee Related
- 2006-09-13 TW TW095133877A patent/TW200729547A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04354387A (ja) * | 1991-05-31 | 1992-12-08 | Iwasaki Electric Co Ltd | 発光ダイオード |
JP2002094122A (ja) * | 2000-07-13 | 2002-03-29 | Matsushita Electric Works Ltd | 光源装置及びその製造方法 |
JP2005039264A (ja) * | 2003-06-30 | 2005-02-10 | Nichia Chem Ind Ltd | 半導体発光素子及びそれを用いた発光装置 |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10533158B2 (en) | 2005-02-28 | 2020-01-14 | Tokai University Educational System | Cultured cell sheet, production method thereof, and application method thereof |
JP2009055006A (ja) * | 2007-07-27 | 2009-03-12 | Nichia Corp | 発光装置及びその製造方法 |
KR101380387B1 (ko) | 2007-09-12 | 2014-04-02 | 서울반도체 주식회사 | Led 패키지 |
US9024343B2 (en) | 2007-12-28 | 2015-05-05 | Nichia Corporation | Light emitting device |
US10559721B2 (en) | 2007-12-28 | 2020-02-11 | Nichia Corporation | Light emitting device |
US9806234B2 (en) | 2007-12-28 | 2017-10-31 | Nichia Corporation | Light emitting device |
WO2010029872A1 (ja) * | 2008-09-09 | 2010-03-18 | 昭和電工株式会社 | 発光装置、発光モジュール、表示装置 |
JP2010067720A (ja) * | 2008-09-09 | 2010-03-25 | Showa Denko Kk | 発光装置、発光モジュール |
US8378369B2 (en) | 2008-09-09 | 2013-02-19 | Showa Denko K.K. | Light emitting unit, light emitting module, and display device |
JP2010067863A (ja) * | 2008-09-11 | 2010-03-25 | Showa Denko Kk | 発光装置、発光モジュール |
WO2012036246A1 (ja) | 2010-09-15 | 2012-03-22 | 学校法人東京女子医科大学 | 中耳粘膜様細胞シート、その製造方法及びその利用方法 |
WO2012118097A1 (ja) | 2011-02-28 | 2012-09-07 | 株式会社セルシード | ヒアルロン酸産生能を有する細胞シート及びその製造方法 |
EP2682458A4 (en) * | 2011-02-28 | 2014-12-03 | Cellseed Inc | CELL CULTURE SHEET CAPABLE OF PRODUCING HYALURONIC ACID, AND PROCESS FOR PREPARING THE SAME |
EP2682458A1 (en) * | 2011-02-28 | 2014-01-08 | CellSeed Inc. | Cell sheet having hyaluronic acid production ability and method for preparing the same |
USRE48858E1 (en) | 2011-08-22 | 2021-12-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and light unit |
JP2018186284A (ja) * | 2011-08-22 | 2018-11-22 | エルジー イノテック カンパニー リミテッド | 紫外線発光素子パッケージ |
JP2013187508A (ja) * | 2012-03-09 | 2013-09-19 | Tatsuta Electric Wire & Cable Co Ltd | Agボンディングワイヤおよびその製造方法 |
JP2013051431A (ja) * | 2012-10-25 | 2013-03-14 | Nichia Chem Ind Ltd | 発光装置 |
JP2015026646A (ja) * | 2013-07-24 | 2015-02-05 | 日亜化学工業株式会社 | 発光装置 |
US9608167B2 (en) | 2013-07-24 | 2017-03-28 | Nichia Corporation | Light emitting device |
JP2016086047A (ja) * | 2014-10-24 | 2016-05-19 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017212314A (ja) * | 2016-05-25 | 2017-11-30 | 日亜化学工業株式会社 | 発光装置 |
CN109599476A (zh) * | 2017-09-28 | 2019-04-09 | 日亚化学工业株式会社 | 发光装置 |
JP2019068053A (ja) * | 2017-09-28 | 2019-04-25 | 日亜化学工業株式会社 | 発光装置 |
KR20190037165A (ko) | 2017-09-28 | 2019-04-05 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
DE102018124126A1 (de) | 2017-09-28 | 2019-03-28 | Nichia Corporation | Licht-emittierende Vorrichtung |
US10622531B2 (en) | 2017-09-28 | 2020-04-14 | Nichia Corporation | Light-emitting device |
KR102653166B1 (ko) * | 2017-09-28 | 2024-04-02 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
US20210376563A1 (en) * | 2020-05-26 | 2021-12-02 | Excelitas Canada, Inc. | Semiconductor Side Emitting Laser Leadframe Package and Method of Producing Same |
Also Published As
Publication number | Publication date |
---|---|
CN101263612A (zh) | 2008-09-10 |
JP4918238B2 (ja) | 2012-04-18 |
KR20080042921A (ko) | 2008-05-15 |
TW200729547A (en) | 2007-08-01 |
KR100978028B1 (ko) | 2010-08-25 |
CN101263612B (zh) | 2010-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4918238B2 (ja) | 発光装置 | |
JP4773755B2 (ja) | チップ型半導体発光素子 | |
TWI351774B (en) | Semiconductor light emitting device | |
US7935978B2 (en) | Light emitting device and method for manufacturing the same | |
US7812358B2 (en) | Light-emitting device | |
JP7315665B2 (ja) | 発光ダイオードパッケージ | |
JP2007242856A (ja) | チップ型半導体発光素子 | |
JP2004363537A (ja) | 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置 | |
JP6583764B2 (ja) | 発光装置、及び照明装置 | |
JP5413137B2 (ja) | 発光装置および発光装置の製造方法 | |
JP2007116138A (ja) | 発光装置 | |
TW200807740A (en) | A light emitting device | |
JP2006310613A (ja) | 半導体発光装置 | |
JP2009170825A (ja) | 発光装置及びその製造方法 | |
JP6064606B2 (ja) | 発光装置 | |
JP2009224538A (ja) | 半導体発光装置 | |
KR100849828B1 (ko) | 발광 다이오드 패키지 | |
JP2007235104A (ja) | 発光装置の製造方法および発光装置 | |
JP5206204B2 (ja) | 発光装置 | |
KR20140004351A (ko) | 발광 다이오드 패키지 | |
CN112768585A (zh) | 一种色光led器件及其制备方法 | |
CN114747025A (zh) | Led发光装置及其制造方法 | |
JP2011119377A (ja) | 発光装置 | |
US9698321B2 (en) | Light-emitting apparatus, illumination apparatus, and method of manufacturing light-emitting apparatus | |
JP2014082300A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080820 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110830 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111003 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20111003 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120124 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120130 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150203 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |