JP2006511965A - 高密度不揮発性メモリを製作するための改良された方法 - Google Patents
高密度不揮発性メモリを製作するための改良された方法 Download PDFInfo
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Abstract
【解決手段】本方法は、望ましくはタングステンから成る導体を形成し、次いで充填と平坦化処理を行い;導体の上方に、好ましくは2つのダイオード部分とアンチヒューズを備えた半導体要素を形成し、次いで充填と平坦化処理を行い;多階層のメモリとして導体と半導体要素を継続的に形成する段階を含んでいる。処理工程の配設と材料の選択によって、各メモリセルのアスペクト比を小さくし、これによって空隙充填の信頼性を改善し、エッチングによるアンダーカットを防止している。
Description
製作
接合アンチヒューズ
トップ・アンチヒューズ
ボトム・アンチヒューズ
パターン成形、エッチング、充填、及び平坦化処理
密度
接点形成
接合及びボトム・アンチヒューズのジア
トップ・アンチヒューズのジア
Claims (27)
- モノリシック三次元メモリアレイの形成方法において:
基板上に複数の第1の導体を形成し;
該複数の第1の導体を形成した後に、それぞれ、第1の導電型を有する第1の高濃度ドープの半導体層と、該第1の層に直接載っている低濃度ドープの第2の半導体層と、該第2の層に直接載っている第3の高濃度に半導体ドープされた層から成り、該第3の高濃度ドープの層は該第1の導電型と反対の第2の導電型を有するようにした複数の第1の半導体要素を該第1の導体の上に形成し;
該第1の半導体要素を形成した後、該第1の半導体要素の上に複数の第2の導体を形成し、
各第1の導体と各第2の導体の間にメモリセルが存在し、各メモリセルはアンチヒューズを含むようにする
ことを特徴とする方法。 - 該第1の高濃度ドープされた層、該第2の低濃度ドープされた層及び該第3の高濃度ドープされた層を半導体材料の単一の堆積によって形成することを特徴とする請求項1に記載の方法。
- 該半導体材料がシリコンであることを特徴とする請求項1に記載の方法。
- 該半導体材料がポリシリコンであることを特徴とする請求項1に記載の方法。
- 該アンチヒューズ層は該第1の高濃度ドープ層と該第2の低濃度ドープ層との間には形成せず、又、該アンチヒューズ層は該第2の低濃度ドープ層と該第3の高濃度ドープ層との間にも形成しないことを特徴とする請求項1に記載の方法。
- 該基板を単結晶のシリコンから構成することを特徴とする請求項1に記載の方法。
- 該第1の導体は半導体材料を含まないないことを特徴とする請求項1に記載の方法。
- 該第1の導体をタングステンから構成することを特徴とする請求項7に記載の方法。
- 該第1の導体を形成する工程が:
第1導体層の堆積と;
該第1の導体を形成するための該第1導体層に対するパターン成形及びエッチングと;
該第1の導体の上部及び導体間への誘電体材料の堆積と;
該第1の導体の上面を露出するための平坦化と
から成っていることを特徴とする請求項1に記載の方法。 - 該平坦化をCPMで行うことを特徴とする請求項1に記載の方法。
- 更に、該第2の導体の上に複数の半導体要素を形成することを含んでいる請求項1に記載の方法。
- 該第1の導体の幅を約300オングストロームから約2500オングストロームの間にすることを特徴とする請求項1に記載の方法。
- 該第1の導体の幅を約300オングストロームから約1500オングストロームの間にすることを特徴とする請求項1に記載の方法。
- 該第1の半導体要素を形成する工程が:
該第1の高濃度ドープ層を堆積し;
該第2の低濃度ドープ層を堆積し;
該第3の高濃度ドープ層を堆積し;
単一のパターン成形をして該第1の高濃度ドープ層、該第2の低濃度ドープ層及び該第3の高濃度ドープ層のパターン成形及びエッチングをする
ことから成っていることを特徴とする請求項1に記載の方法。 - 該第1の半導体要素を単一のパターン成形を通して形成することを特徴とする請求項1に記載の方法。
- 該第1の高濃度ドープ層を窒化チタンから成るバリヤ層の上に堆積することを特徴とする請求項1に記載の方法。
- モノリシック三次元半導体メモリアレイにおいて:
基板上において実質的に相互に平行に第1方向に延びる複数の第1導体と;
該第1導体上方位置において実質的に相互に平行に該第1方向とは異なる第2方向に延びる複数の第2導体と;
第1の複数の半導体要素であって、それぞれ、該第1導体の1つと該第2導体の1つとの間に設けられ、第1の導電型である高濃度ドープの底部半導体層と、第2の導電型である低濃度ドープの中間部半導体層と、第1の導電型である高濃度ドープの頂部半導体層から成り、実質的に柱状とされた第1の複数の半導体要素と;
を備え、
それぞれ、該第1導体の1つの一部分、該第1の半導体要素の1つ、及び該第2導体の1つの一部分、アンチヒューズを含む複数の第1メモリセルを有する
ことを特徴とするモノリシック三次元メモリアレイ。 - 該第1導体又は該第2導体がタングステンから成ることを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 該半導体要素がポリシリコンから成ることを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 各半導体要素の幅が約300オングストロームから約2500オングストロームの間にあることを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- アンチヒューズは各第1半導体要素の該底部高濃度ドープ層と該中間部低濃度ドープ層の間、又は該中間部低濃度ドープ層と該頂部高濃度ドープ層の間には配置されていないことを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 各第1半導体要素の該底部高濃度ドープ層、該中間部低濃度ドープ層、及び該頂部高濃度ドープ層は単一のシリコン堆積工程で堆積されることを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 該第1導体は半導体材料を含まないことを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 該基板が単結晶シリコンから成っていることを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 更に、該第2導体の上にある複数の第2の半導体要素を有することを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 更に、該第1の複数のメモリセルの上に形成された第2の複数のメモリセルを有することを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
- 該第1の半導体要素は該第1導体又は該第2導体に対して自己整合していないことを特徴とする請求項17に記載のモノリシック三次元メモリアレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32647002A | 2002-12-19 | 2002-12-19 | |
US10/326,470 | 2002-12-19 | ||
PCT/US2003/039612 WO2004061851A2 (en) | 2002-12-19 | 2003-12-12 | An improved method for making high-density nonvolatile memory |
Publications (2)
Publication Number | Publication Date |
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JP2006511965A true JP2006511965A (ja) | 2006-04-06 |
JP2006511965A5 JP2006511965A5 (ja) | 2007-03-01 |
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JP2011517364A (ja) * | 2007-06-25 | 2011-06-02 | サンディスク スリーディー,エルエルシー | 炭素または窒素をドープされたダイオードを備える不揮発性メモリ素子およびその製造方法 |
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WO2004061851A3 (en) | 2005-06-23 |
US20050012220A1 (en) | 2005-01-20 |
US20110287615A1 (en) | 2011-11-24 |
WO2004061851A2 (en) | 2004-07-22 |
US6984561B2 (en) | 2006-01-10 |
US20050014322A1 (en) | 2005-01-20 |
US8951861B2 (en) | 2015-02-10 |
US20050012120A1 (en) | 2005-01-20 |
AU2003296988A8 (en) | 2004-07-29 |
US20050012119A1 (en) | 2005-01-20 |
US20050014334A1 (en) | 2005-01-20 |
US20050012154A1 (en) | 2005-01-20 |
US20090261343A1 (en) | 2009-10-22 |
US7026212B2 (en) | 2006-04-11 |
US8004033B2 (en) | 2011-08-23 |
US8383478B2 (en) | 2013-02-26 |
US6952030B2 (en) | 2005-10-04 |
US6960495B2 (en) | 2005-11-01 |
US7557405B2 (en) | 2009-07-07 |
US6995422B2 (en) | 2006-02-07 |
US20130164921A1 (en) | 2013-06-27 |
AU2003296988A1 (en) | 2004-07-29 |
US7009275B2 (en) | 2006-03-07 |
US20060189077A1 (en) | 2006-08-24 |
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