JP2006066642A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 239000010937 tungsten Substances 0.000 claims abstract description 132
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 132
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 131
- 239000010410 layer Substances 0.000 claims abstract description 129
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000010926 purge Methods 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 239000011737 fluorine Substances 0.000 claims abstract description 35
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 35
- 239000011229 interlayer Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 117
- 239000007789 gas Substances 0.000 claims description 116
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 239000011261 inert gas Substances 0.000 claims description 12
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 150000003376 silicon Chemical class 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052704 radon Inorganic materials 0.000 claims description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】本発明の半導体装置の製造方法は、半導体基板(1)上に層間絶縁膜(2)を形成するステップと、前記層間絶縁膜(2)の内部に延びるコンタクトホールを形成するステップと、前記コンタクトホールの底面部及び側壁部にバリアメタル層(4)を形成するステップと、前記バリアメタル層(4)が形成された前記コンタクトホールに、フッ素を含む材料からタングステン層(5)を形成するステップと、ポストパージにより前記タングステン層(5)から前記フッ素を除去するステップとを具備している。
【選択図】図9
Description
2 層間絶縁膜
3 コンタクトホール
4 バリアメタル層
4’ バリアメタル層
5 タングステン層
5’ 第1タングステン層
5’’ タングステン層
6 シリコン
6’ フッ素化シリコン膜
7 配線層
Claims (10)
- 半導体基板上に層間絶縁膜を形成するステップと、
前記層間絶縁膜の内部に延びるコンタクトホールを形成するステップと、
前記コンタクトホールの底面部及び側壁部にバリアメタル層を形成するステップと、
前記バリアメタル層が形成された前記コンタクトホールに、フッ素を含む材料からタングステン層を形成するステップと、
ポストパージにより前記タングステン層から前記フッ素を除去するステップと
を具備する半導体装置の製造方法。 - 前記フッ素を除去するステップは、
ケイ化水素ガスを導入してポストパージを行い、前記タングステン層から前記フッ素を除去するステップ
を含む請求項1に記載の半導体装置の製造方法。 - 前記タングステン層を形成するステップは、
不活性ガスを導入してガスパージを行うステップと、
水素ガスと前記ケイ化水素ガスを導入してガスパージを行うステップと、
前記フッ素を含む材料として弗化タングステンガスを導入して、前記バリアメタル層が形成された前記コンタクトホールに、第1タングステン層を形成するステップと、
前記水素ガスと前記不活性ガスを導入してガスパージを行うステップと、
前記弗化タングステンガスを導入して、前記第1タングステン層上に第2タングステン層を堆積して前記タングステン層を形成するステップと
を含む請求項2に記載の半導体装置の製造方法。 - 前記フッ素を除去するステップは、
前記水素ガスと前記不活性ガスを導入して、ガスパージを行うステップと、
前記水素ガスと前記ケイ化水素ガスを導入して、前記ポストパージを行うステップと、前記タングステン層上に堆積されたシリコンと前記タングステン層に含まれる前記フッ素とが反応してフッ素化シリコン膜が前記タングステン層上に形成され、
前記ポストパージを行った後に、前記水素ガスと前記不活性ガスを導入して、ガスパージを行うステップと、
前記タングステン層上に形成された前記フッ素化シリコン膜を除去するステップと
を含む請求項3に記載の半導体装置の製造方法。 - 前記ポストパージにおいて、前記半導体基板の温度は250℃から500℃の範囲である
請求項2〜4のいずれかに記載の半導体装置の製造方法。 - 前記ポストパージにおいて、前記ケイ化水素ガスのガス圧は0.1torrから3torrの範囲である
請求項2〜5のいずれかに記載の半導体装置の製造方法。 - 前記ポストパージの時間は3秒から20秒の範囲である
請求項2〜6のいずれかに記載の半導体装置の製造方法。 - 前記ケイ化水素ガスは、モノシラン(SiH4)ガス、又は、ジシラン(Si2H6)ガスである
請求項2〜7のいずれかに記載の半導体装置の製造方法。 - 前記弗化タングステンガスは、六弗化タングステン(WF6)ガスである
請求項3〜8のいずれかに記載の半導体装置の製造方法。 - 前記不活性ガスは、ヘリウム、ネオン、アルゴン、クリプトン、キセノン、ラドンのいずれかのガスである
請求項3〜9のいずれかに記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004247443A JP4798688B2 (ja) | 2004-08-26 | 2004-08-26 | 半導体装置の製造方法 |
US11/211,531 US7371680B2 (en) | 2004-08-26 | 2005-08-26 | Method of manufacturing semiconductor device |
CNB2005100922965A CN100424851C (zh) | 2004-08-26 | 2005-08-26 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
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JP2004247443A JP4798688B2 (ja) | 2004-08-26 | 2004-08-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006066642A true JP2006066642A (ja) | 2006-03-09 |
JP4798688B2 JP4798688B2 (ja) | 2011-10-19 |
Family
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JP2004247443A Expired - Fee Related JP4798688B2 (ja) | 2004-08-26 | 2004-08-26 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7371680B2 (ja) |
JP (1) | JP4798688B2 (ja) |
CN (1) | CN100424851C (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012033900A (ja) * | 2010-07-02 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
US8304340B2 (en) | 2009-07-23 | 2012-11-06 | Elpida Memory, Inc. | Method for manufacturing stacked contact plugs |
KR20180120853A (ko) * | 2017-04-27 | 2018-11-07 | 주식회사 레이크머티리얼즈 | 저 불소 함량을 갖는 텅스텐 박막의 제조 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7863180B2 (en) * | 2008-05-06 | 2011-01-04 | International Business Machines Corporation | Through substrate via including variable sidewall profile |
US7741226B2 (en) * | 2008-05-06 | 2010-06-22 | International Business Machines Corporation | Optimal tungsten through wafer via and process of fabricating same |
US20120003833A1 (en) * | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for forming tungsten-containing layers |
CN104576607A (zh) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 通孔填充结构以及通孔填充方法 |
KR20170120443A (ko) * | 2016-04-21 | 2017-10-31 | 삼성전자주식회사 | 텅스텐 박막의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
CN108091609A (zh) * | 2017-11-23 | 2018-05-29 | 上海华力微电子有限公司 | 钨填充凹槽结构的方法 |
CN109065495B (zh) * | 2018-07-13 | 2020-10-09 | 上海华力微电子有限公司 | 钨填充凹槽结构中形成不含氟钨金属层的方法 |
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- 2005-08-26 US US11/211,531 patent/US7371680B2/en not_active Expired - Fee Related
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US8304340B2 (en) | 2009-07-23 | 2012-11-06 | Elpida Memory, Inc. | Method for manufacturing stacked contact plugs |
JP2012033900A (ja) * | 2010-07-02 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
US9153537B2 (en) | 2010-07-02 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20180120853A (ko) * | 2017-04-27 | 2018-11-07 | 주식회사 레이크머티리얼즈 | 저 불소 함량을 갖는 텅스텐 박막의 제조 방법 |
KR102367848B1 (ko) * | 2017-04-27 | 2022-02-25 | 주식회사 레이크머티리얼즈 | 저 불소 함량을 갖는 텅스텐 박막의 제조 방법 |
Also Published As
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JP4798688B2 (ja) | 2011-10-19 |
CN1741264A (zh) | 2006-03-01 |
US7371680B2 (en) | 2008-05-13 |
US20060046457A1 (en) | 2006-03-02 |
CN100424851C (zh) | 2008-10-08 |
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