JP2005079425A - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
- Publication number
- JP2005079425A JP2005079425A JP2003309718A JP2003309718A JP2005079425A JP 2005079425 A JP2005079425 A JP 2005079425A JP 2003309718 A JP2003309718 A JP 2003309718A JP 2003309718 A JP2003309718 A JP 2003309718A JP 2005079425 A JP2005079425 A JP 2005079425A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor integrated
- integrated circuit
- circuit
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000010931 gold Substances 0.000 claims abstract description 39
- 229910052737 gold Inorganic materials 0.000 claims abstract description 39
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 230000001419 dependent effect Effects 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 6
- 238000013021 overheating Methods 0.000 abstract description 20
- 238000010586 diagram Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】 パワートランジスタ2とトランジスタ3,4とをシリコンの熱伝導率よりも高い金の膜7で覆って構成したので、パワートランジスタ2から発生した熱がトランジスタ3,4に効率良く熱伝導され、パワートランジスタ2を過熱から保護することができる。トランジスタ3,4も、金の膜7で覆われているので、各トランジスタ3,4には均等に熱が伝導され、温度変化があっても本来の動作精度を維持でき、半導体集積回路の温度特性を含む動作の精度が向上する。
【選択図】 図1
Description
2 パワートランジスタ(熱源系回路素子)
3〜6 トランジスタ(温度依存系回路素子)
7〜10,31 金の膜
Claims (5)
- 動作時に比較的に高い熱を発生し所定の動作を行う1個以上の熱源系回路素子と、動作時に温度に依存して特性値が一定の関係を有し所定の動作を行う2個以上の温度依存系回路素子とが半導体基板上の所定箇所にそれぞれ配置されて構成された半導体集積回路において、前記1個以上の熱源系回路素子と前記2個以上の温度依存系回路素子とを半導体基板の熱伝導率よりも高い物質の膜で覆って構成したことを特徴とする半導体集積回路。
- 動作時に比較的に高い熱を発生し所定の動作を行う1個以上の熱源系回路素子と、動作時に温度に依存して特性値が一定の関係を有し所定の動作を行う2個以上の温度依存系回路素子とが半導体基板上の所定箇所にそれぞれ配置されて構成された半導体集積回路において、前記2個以上の温度依存系回路素子を半導体基板の熱伝導率よりも高い物質の膜で覆って構成したことを特徴とする半導体集積回路。
- 前記熱源系回路素子はパワートランジスタであり、前記温度依存系回路素子はトランジスタであることを特徴とする請求項1または請求項2に記載の半導体集積回路。
- 前記半導体基板がシリコンウェハであり、前記半導体基板の熱伝導率よりも高い物質の膜とは、シリコンよりも熱伝導率が高い金の膜であることを特徴とする請求項1または請求項2に記載の半導体集積回路。
- 前記金の膜は回路素子の配線を兼ねて構成したことを特徴とする請求項4に記載の半導体集積回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003309718A JP2005079425A (ja) | 2003-09-02 | 2003-09-02 | 半導体集積回路 |
KR1020040068574A KR20050024186A (ko) | 2003-09-02 | 2004-08-30 | 반도체 집적 회로 |
US10/929,760 US7148573B2 (en) | 2003-09-02 | 2004-08-31 | Semiconductor integrated circuit |
TW093126140A TW200518271A (en) | 2003-09-02 | 2004-08-31 | Semiconductor integrated circuit |
CNB200410075169XA CN100369250C (zh) | 2003-09-02 | 2004-09-02 | 半导体集成电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003309718A JP2005079425A (ja) | 2003-09-02 | 2003-09-02 | 半導体集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005079425A true JP2005079425A (ja) | 2005-03-24 |
Family
ID=34214200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003309718A Pending JP2005079425A (ja) | 2003-09-02 | 2003-09-02 | 半導体集積回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7148573B2 (ja) |
JP (1) | JP2005079425A (ja) |
KR (1) | KR20050024186A (ja) |
CN (1) | CN100369250C (ja) |
TW (1) | TW200518271A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015166714A (ja) * | 2014-03-04 | 2015-09-24 | ローム株式会社 | 半導体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104267332B (zh) * | 2014-10-13 | 2017-06-06 | 华东光电集成器件研究所 | 一种集成电路壳温均衡老炼装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0455153U (ja) * | 1990-09-13 | 1992-05-12 | ||
JPH07321286A (ja) * | 1994-05-27 | 1995-12-08 | Rohm Co Ltd | 熱源素子と温度依存素子を有する回路 |
JPH11250551A (ja) * | 1998-03-03 | 1999-09-17 | Rohm Co Ltd | フロッピーディスクドライブ装置 |
JP2000174214A (ja) * | 1998-12-08 | 2000-06-23 | Yasusuke Yamamoto | 半導体集積回路 |
JP2000277686A (ja) * | 1999-03-29 | 2000-10-06 | Mitsumi Electric Co Ltd | 半導体集積回路 |
JP2002217378A (ja) * | 2001-01-19 | 2002-08-02 | Toshiba Corp | 高周波電力増幅器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56137661A (en) * | 1980-03-31 | 1981-10-27 | Toshiba Corp | Semiconductor device |
JPS61124162A (ja) * | 1984-11-20 | 1986-06-11 | Nec Corp | 半導体装置 |
JPH0979916A (ja) * | 1995-09-13 | 1997-03-28 | Nissan Motor Co Ltd | 温度検知回路 |
TW430959B (en) * | 1998-04-22 | 2001-04-21 | World Wiser Electronics Inc | Thermal enhanced structure of printed circuit board |
JP3476419B2 (ja) * | 2000-06-28 | 2003-12-10 | Necエレクトロニクス株式会社 | 半導体回路 |
JP2003100885A (ja) * | 2001-09-26 | 2003-04-04 | Toshiba Microelectronics Corp | 半導体集積回路 |
-
2003
- 2003-09-02 JP JP2003309718A patent/JP2005079425A/ja active Pending
-
2004
- 2004-08-30 KR KR1020040068574A patent/KR20050024186A/ko not_active Application Discontinuation
- 2004-08-31 TW TW093126140A patent/TW200518271A/zh unknown
- 2004-08-31 US US10/929,760 patent/US7148573B2/en active Active
- 2004-09-02 CN CNB200410075169XA patent/CN100369250C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0455153U (ja) * | 1990-09-13 | 1992-05-12 | ||
JPH07321286A (ja) * | 1994-05-27 | 1995-12-08 | Rohm Co Ltd | 熱源素子と温度依存素子を有する回路 |
JPH11250551A (ja) * | 1998-03-03 | 1999-09-17 | Rohm Co Ltd | フロッピーディスクドライブ装置 |
JP2000174214A (ja) * | 1998-12-08 | 2000-06-23 | Yasusuke Yamamoto | 半導体集積回路 |
JP2000277686A (ja) * | 1999-03-29 | 2000-10-06 | Mitsumi Electric Co Ltd | 半導体集積回路 |
JP2002217378A (ja) * | 2001-01-19 | 2002-08-02 | Toshiba Corp | 高周波電力増幅器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015166714A (ja) * | 2014-03-04 | 2015-09-24 | ローム株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200518271A (en) | 2005-06-01 |
CN1591828A (zh) | 2005-03-09 |
KR20050024186A (ko) | 2005-03-10 |
CN100369250C (zh) | 2008-02-13 |
US20050046013A1 (en) | 2005-03-03 |
US7148573B2 (en) | 2006-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101975409B1 (ko) | 시스템 온 칩 및 그것의 온도 제어 방법 | |
JP2003197913A (ja) | 半導体集積回路 | |
KR102032334B1 (ko) | 반도체 장치 | |
JP2008533734A (ja) | 温度感知機能を有するmosfet | |
JP2011166518A (ja) | 電流制限回路 | |
WO2017119126A1 (ja) | 半導体装置 | |
JP2006237331A (ja) | 過温度検出回路及び過温度保護回路 | |
JP2522208B2 (ja) | 半導体装置 | |
JP2002366237A (ja) | ボルテージ・レギュレータ | |
JPH0955439A (ja) | 半導体装置およびその製造方法 | |
JP5124292B2 (ja) | 電力スイッチ回路 | |
JP7117904B2 (ja) | 電力用半導体装置 | |
KR100364876B1 (ko) | 보호회로 | |
JP2005079425A (ja) | 半導体集積回路 | |
JP2006093311A (ja) | 半導体装置及びその半導体装置を使用したボルテージレギュレータ | |
JP5003105B2 (ja) | 電流制限回路 | |
JP2004228317A (ja) | 半導体記憶装置 | |
JP4717246B2 (ja) | 半導体装置 | |
JP3092062B2 (ja) | 半導体装置 | |
JP2015226033A (ja) | 半導体装置 | |
JP2004063606A (ja) | 過電流保護装置 | |
JPH05218311A (ja) | 一体型オン・ステート電圧検出構造を有する高出力半導体デバイス | |
JPH1187628A (ja) | 半導体集積回路 | |
JP2005122753A (ja) | 温度検知回路および加熱保護回路、ならびにこれらの回路を組み込んだ各種電子機器 | |
JP2006100690A (ja) | パワートランジスタ温度保護装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050901 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050920 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051025 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060725 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060922 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070327 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070524 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080624 |