JP2003332594A - Lead frame and light receiving module comprising it - Google Patents
Lead frame and light receiving module comprising itInfo
- Publication number
- JP2003332594A JP2003332594A JP2003141766A JP2003141766A JP2003332594A JP 2003332594 A JP2003332594 A JP 2003332594A JP 2003141766 A JP2003141766 A JP 2003141766A JP 2003141766 A JP2003141766 A JP 2003141766A JP 2003332594 A JP2003332594 A JP 2003332594A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- light
- receiving element
- lead frame
- fixing portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光リモコンなどに好
適な受光モジュ−ルとそれに用いるリードフレームに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light receiving module suitable for an optical remote controller and a lead frame used for the same.
【０００２】[0002]
【従来の技術】近年、オ−ディオ装置、空調機器、テレ
ビジョン受信器など多くの室内機器においては、赤外光
が雑音に強くまた比較的多くの情報量を短時間に伝達で
きるので、発光ダイオ−ドと受光素子を利用した光リモ
コンが使用されている。その光リモコンに用いる受光モ
ジュ−ルは例えば特許文献１に示されるように、受光素
子と回路素子をプリント基板上に載置し、シ−ルドケ−
スに収納してこれを構成している。2. Description of the Related Art In recent years, in many indoor equipment such as audio equipment, air conditioners, and television receivers, infrared light is resistant to noise and a relatively large amount of information can be transmitted in a short time. An optical remote controller using a diode and a light receiving element is used. The light receiving module used for the optical remote controller is, for example, as disclosed in Patent Document 1, a light receiving element and a circuit element are placed on a printed circuit board and shielded.
It is housed in a table and constitutes this.
【０００３】[0003]
【特許文献１】実開平１−１０２８３４号公報[Patent Document 1] Japanese Utility Model Laid-Open No. 1-208834
【０００４】[0004]
【発明が解決しようとする課題】しかして上述の受光モ
ジュ−ルでは、受光素子と回路素子との配線が複雑なた
め両者間で雑音を拾い易い。またプリント基板を用いる
ため占有体積が大きいという欠点が有る。そこで一つの
半導体基板上に受光素子と回路素子を集積する事が試み
られるが、実用に至っていない。何故ならば受光素子の
出力が低く、応答速度が遅く、あるいは回路素子に光が
当る事により誤動作を生じ易いからである。故に本発明
は上述の欠点を鑑みてなされたものであり、すなわち雑
音を拾いにくい受光モジュ−ルを提供するものである。
また、小型の受光モジュ−ルを提供するものである。ま
た、応答速度の早い受光モジュ−ルを提供するものであ
る。また、誤動作を生じにくい受光モジュ−ルを提供す
るものである。In the above light receiving module, however, noise is easily picked up between the light receiving element and the circuit element because the wiring between the light receiving element and the circuit element is complicated. Further, since the printed circuit board is used, there is a drawback that the occupied volume is large. Therefore, it has been attempted to integrate the light receiving element and the circuit element on one semiconductor substrate, but it has not been practically used. This is because the output of the light receiving element is low, the response speed is slow, or the circuit element is exposed to light, and a malfunction is likely to occur. Therefore, the present invention has been made in view of the above-mentioned drawbacks, that is, to provide a light receiving module in which noise is hardly picked up.
It also provides a compact light receiving module. Further, the present invention provides a light receiving module having a high response speed. Further, the present invention provides a light receiving module which is less likely to malfunction.
【０００５】[0005]
【課題を解決するための手段】本発明のリードフレーム
は、リード部と幅広の素子固定部と該素子固定部の延長
上に設けられた舌片部とを一体に有するリードフレーム
であって、前記舌片部は光導入孔が設けられているとと
もに、前記素子固定部と平行になるように折り曲げ加工
されるものである事を特徴とする。A lead frame according to the present invention is a lead frame integrally including a lead portion, a wide element fixing portion, and a tongue piece portion provided on an extension of the element fixing portion, The tongue piece is provided with a light introduction hole, and is bent so as to be parallel to the element fixing portion.
【０００６】このリードフレームによれば、舌片部に光
導入孔が設けられているとともに、素子固定部と平行に
なるように舌片部が折り曲げ加工されるので、リードフ
レームを素子の上下を覆うシールド板として機能させ、
耐雑音特性が良好な受光モジュールとする事ができる。According to this lead frame, the tongue portion is provided with the light introducing hole, and the tongue portion is bent so as to be parallel to the element fixing portion. Make it function as a shield plate to cover,
It is possible to obtain a light receiving module having good noise resistance characteristics.
【０００７】本発明の受光モジュールは、受光素子とそ
の出力信号を増幅して出力する回路素子を備えるので、
両者を単独に製作する際、最適の比抵抗を選択する事に
より受光素子の出力を高めて応答速度を早くできる。さ
らに、受光素子と回路素子の両方を金属製のリードフレ
ームの素子固定部に固着するとともに光導入孔を有する
舌片部によって覆うので、このリードフレームを素子の
上下を覆うシールド板として機能させ、耐雑音特性が良
好な受光モジュールとする事ができる。また、素子を覆
う舌片部は、リードフレームの素子固定部の延長上部分
を折り曲げ加工して設けられるので、別途シールド板を
装着する場合に比べて組み立て作業性が良好になる。特
に、舌片部には受光素子の光導入孔が設けられているの
で、一般的なシールド構造では得られない受光モジュー
ルに最適な構造を提供する事ができる。Since the light receiving module of the present invention comprises the light receiving element and the circuit element for amplifying and outputting the output signal thereof,
When both are manufactured separately, the output of the light receiving element can be increased and the response speed can be increased by selecting the optimum specific resistance. Furthermore, since both the light receiving element and the circuit element are fixed to the element fixing portion of the metallic lead frame and covered by the tongue portion having the light introduction hole, this lead frame is made to function as a shield plate that covers the upper and lower sides of the element, It is possible to obtain a light receiving module having good noise resistance characteristics. Further, since the tongue portion that covers the element is provided by bending the extension upper portion of the element fixing portion of the lead frame, assembly workability is improved as compared with the case where a separate shield plate is attached. In particular, since the light introducing hole of the light receiving element is provided in the tongue portion, it is possible to provide an optimal structure for the light receiving module which cannot be obtained by a general shield structure.
【０００８】[0008]
【発明の実施の形態】以下に本発明の第１実施形態を図
１、図２、図３に従って説明する。図１は本実施形態に
係る受光モジュ−ルの平面断面図、図２は図１のＡＡ断
面図である。これらの図に於て、フレ−ム１は金属性の
板からなり、複数のリードフレームからなる。リードフ
レームの１つは、幅の広い素子固定部１１とリ−ド部１
２を有している。リ−ド部１２に略平行に他のリ−ドフ
レ−ム１３、１４が２本配置されている。BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described below with reference to FIGS. 1, 2 and 3. FIG. 1 is a plan sectional view of a light receiving module according to this embodiment, and FIG. 2 is a sectional view taken along the line AA of FIG. In these figures, the frame 1 is made of a metal plate and is made of a plurality of lead frames. One of the lead frames is a wide element fixing portion 11 and a lead portion 1.
Have two. Two other lead frames 13 and 14 are arranged substantially parallel to the lead portion 12.
【０００９】受光素子２は例えばシリコンＰＩＮホトダ
イオ−ドからなり、フレ−ム１の素子固定部１１に導電
性接着剤を介して固着されている。受光素子２は電極２
１、半導体基板（Ｐ層）２２、Ｉ層２３、空乏層２４、
拡散層（Ｎ層）２５、他の電極２６から構成されてい
る。Ｉ層２３はシリコンに濃度１０14ｃｍ-3程度のＰ型
不純物を添加されたものである。半導体基板２２は、こ
のＩ層２３の下部に選択拡散され、濃度１０19〜１０20
ｃｍ-3のＰ型不純物が添加されている。拡散層（ｎ層）
２５はＩ層２３の上部に部分的に選択拡散され、濃度１
０19〜１０20ｃｍ -3のＮ型不純物が添加されている。空
乏層２４はＮ層２５の表面からＩ層２３の内部に部分的
に延びて形成されたもので、キャリア濃度が非常に少な
い領域である。The light receiving element 2 is, for example, a silicon PIN photodiode.
Made of iodine and conductive to the element fixing part 11 of the frame 1.
It is fixed via a transparent adhesive. Light receiving element 2 is electrode 2
1, semiconductor substrate (P layer) 22, I layer 23, depletion layer 24,
Consists of a diffusion layer (N layer) 25 and another electrode 26
It The I layer 23 has a concentration of 10 in silicon.14cm-3P type
It has impurities added. The semiconductor substrate 22 is
Under the I layer 23 of 1019-1020
cm-3P-type impurities are added. Diffusion layer (n layer)
25 is partially diffused on the upper part of the I layer 23 and has a concentration of 1
019-1020cm -3N-type impurities are added. Sky
The depletion layer 24 partially extends from the surface of the N layer 25 to the inside of the I layer 23.
The carrier concentration is extremely low.
Area.
【００１０】回路素子３は素子固定部１１上に導電性接
着剤を介して固着されている。回路素子３は断面図で示
す様に、電極３０１、半導体基板（Ｐ層）３０２、Ｎ+
（埋込層）３０３、Ｎ層３０４、Ｎ+層３０５と３０
６、Ｐ層３０７、ＳｉＯ2層３０８、導電層３０９、導
電層３１０、他の電極３１１、３１２、３１３、３１４
から構成されている。この様に受光素子２と回路素子３
はそれぞれフレ−ム１と接続される電極２１と３０１上
に同一導電型（Ｐ型）の半導体基板２２と３０２を有し
ている。The circuit element 3 is fixed on the element fixing portion 11 via a conductive adhesive. As shown in the sectional view, the circuit element 3 includes an electrode 301, a semiconductor substrate (P layer) 302, N +
(Buried layer) 303, N layer 304, N + layers 305 and 30
6, P layer 307, SiO2 layer 308, conductive layer 309, conductive layer 310, other electrodes 311, 312, 313, 314
It consists of In this way, the light receiving element 2 and the circuit element 3
Have semiconductor substrates 22 and 302 of the same conductivity type (P type) on electrodes 21 and 301 connected to frame 1, respectively.
【００１１】金属細線４１、４２、４３、４４は金等か
らなる配線手段で、それぞれ受光素子２の他の電極２６
と回路素子３の他の電極３１１との間、素子固定部１１
と他の電極３１３との間、他のリ−ドフレ−ム１３と他
の電極３１２との間、他のリ−ドフレ−ム１４と他の電
極３１４との間に接続されている。そして好ましくは、
この回路素子３の周辺をカ−ボン入りシリコ−ン等の遮
光性樹脂５が覆う様に設けられている。The thin metal wires 41, 42, 43, 44 are wiring means made of gold or the like, and are used as the other electrodes 26 of the light receiving element 2, respectively.
And the other electrode 311 of the circuit element 3, the element fixing portion 11
To another electrode 313, to another lead frame 13 to another electrode 312, and to another lead frame 14 to another electrode 314. And preferably,
The periphery of the circuit element 3 is provided so as to be covered with a light shielding resin 5 such as a silicone containing carbon.
【００１２】フレ−ム１の素子固定部１１と受光素子２
と回路素子３又は遮光性樹脂５は、エポキシ樹脂等から
なりかつ受光素子２の必要な波長の光（概ね赤外光）に
対して透光性を有しかつ他の波長の光（特に可視光）に
対して遮光性を有する黒色の樹脂６で一体に覆われてい
る。Element fixing portion 11 of frame 1 and light receiving element 2
The circuit element 3 and the light-shielding resin 5 are made of an epoxy resin or the like and have a light-transmitting property with respect to light of a required wavelength (generally infrared light) of the light-receiving element 2 and light of another wavelength (especially visible light). It is integrally covered with a black resin 6 having a light shielding property against light).
【００１３】次にこの受光モジュ−ルの動作を図３のブ
ロック図に従い説明する。この図に於て回路素子３は、
例えばＡＢＬＣ３１５と増幅器３１６とリミッタ３１７
とフィルタ３１８と検波回路３１９と波形整形回路３２
０とトランジスタ３２１と抵抗３２２の各回路からな
る。受光素子２のアノ−ド側（電極２１）はフレ−ム１
を介してアノ−ド共通タイプとして接地電位に接続さ
れ、カソ−ド側（他の電極２６）は回路素子３の入力に
接続されている。ＡＢＬＣ３１５はオ−トバイアスロジ
ックレベルコントロ−ルであり、受光素子２に一定の逆
バイアス電位を与える。他のリ−ドフレ−ム１４に印加
される電位Ｖｃｃは回路素子３内の各回路に電圧を与え
る。リ−ド部１２は電源電位、すなわち接地電位に接続
されている。この様にして電気信号を変調された赤外光
を受けとった受光素子２からの信号は回路素子３を経
て、他のリ−ドフレ−ム１３に出力信号Ｖｓｓを与え
る。Next, the operation of this light receiving module will be described with reference to the block diagram of FIG. In this figure, the circuit element 3 is
For example, ABLC 315, amplifier 316, limiter 317
, Filter 318, detection circuit 319 and waveform shaping circuit 32
0, a transistor 321, and a resistor 322. The anode side (electrode 21) of the light receiving element 2 is the frame 1
Is connected to the ground potential as an anode common type through the cathode side (the other electrode 26) is connected to the input of the circuit element 3. The ABLC 315 is an auto-bias logic level control and applies a constant reverse bias potential to the light receiving element 2. The potential Vcc applied to the other lead frame 14 applies a voltage to each circuit in the circuit element 3. The lead portion 12 is connected to the power supply potential, that is, the ground potential. The signal from the light receiving element 2 which receives the infrared light whose electric signal is modulated in this way passes through the circuit element 3 and gives the output signal Vss to the other lead frame 13.
【００１４】ここで、図1、図2に示すように、受光素子
２と回路素子３はそれぞれの裏側の電極がリードフレー
ムの素子固定部１１に導電性接着剤を介して共通に接続
され、前記リードフレームのリード部１２が電源電位
（接地電位）に接続されているので、リードフレームが
シールド板として機能し、受光素子２や回路素子３に侵
入する雑音を低減する事ができる。また、リードフレー
ム１３の前方に回路素子３を配置し、回路素子3の前方
に受光素子２を配置し、受光素子２、配線４１、回路素
子３、配線４３、リードフレーム１３を直線的に配列し
ているので、微弱信号が出力される配線４１を、大きな
信号が出力される配線４３、リードフレーム１３と離間
して配置する事ができる。その結果、配線４１に配線４
３やリードフレーム１３などの出力が与える影響を最小
限に抑制する事ができ、受光モジュールの動作の安定化
を図る事ができる。Here, as shown in FIGS. 1 and 2, the electrodes on the back side of the light receiving element 2 and the circuit element 3 are commonly connected to the element fixing portion 11 of the lead frame via a conductive adhesive. Since the lead portion 12 of the lead frame is connected to the power source potential (ground potential), the lead frame functions as a shield plate, and noise that enters the light receiving element 2 and the circuit element 3 can be reduced. Further, the circuit element 3 is arranged in front of the lead frame 13, the light receiving element 2 is arranged in front of the circuit element 3, and the light receiving element 2, the wiring 41, the circuit element 3, the wiring 43, and the lead frame 13 are linearly arranged. Therefore, the wiring 41 that outputs a weak signal can be arranged separately from the wiring 43 that outputs a large signal and the lead frame 13. As a result, the wiring 4 is connected to the wiring 41.
It is possible to suppress the influence of the outputs of the optical pickup 3 and the lead frame 13 to the minimum, and it is possible to stabilize the operation of the light receiving module.
【００１５】次に、カソ−ド共通タイプとして、本発明
の第２実施形態を図４に従って説明する。図４は本実施
形態に係る受光モジュ−ルのブロック図である。図４で
示した番号の内、図１ないし図３と同じ番号は同じ部品
である事を示す。受光素子２ａは第１実施形態で示した
受光素子２のＰ層とＮ層を逆転させたものである。すな
わちＩ層２３ａはシリコンにＮ型不純物を添加され、半
導体基板２２ａはＮ型不純物が添加され、拡散層（Ｐ
層）２５ａはＰ型不純物が添加されたものである。Next, a second embodiment of the present invention will be described with reference to FIG. 4 as a cathode common type. FIG. 4 is a block diagram of the light receiving module according to this embodiment. Of the numbers shown in FIG. 4, the same numbers as in FIGS. 1 to 3 indicate the same parts. The light receiving element 2a is the light receiving element 2 shown in the first embodiment in which the P layer and the N layer are reversed. That is, the I layer 23a is doped with N-type impurities in silicon, and the semiconductor substrate 22a is doped with N-type impurities.
The layer) 25a is a layer to which a P-type impurity is added.
【００１６】回路素子３ａは概ね第１実施形態で示した
回路素子３のＰ層とＮ層を逆転させたものであり、半導
体基板３０２ａはＮ型である。但しトランジスタ３２１
は第１実施形態と同じＮＰＮ型を用いる。受光素子２ａ
のカソ−ド側（電極２１）はフレ−ム１を介してカソ−
ド共通タイプとしてプラス電位に接続され、アノ−ド側
（他の電極２６）は回路素子３ａの入力に接続されてい
る。リ−ド部１２に印加される電源電位Ｖｃｃは回路素
子３ａ内の各回路にその電位を与える。他のリ−ドフレ
−ム１４は接地電位に接続されている。この様にして変
調された赤外光は受光素子２ａを経て、回路素子３ａに
より、他のリ−ドフレ−ム１３に出力信号Ｖｓｓを与え
る。このカソ−ド共通タイプの実施形態もアノード共通
タイプの実施形態と同様の作用効果を奏する事ができ
る。The circuit element 3a is substantially the same as the circuit element 3 shown in the first embodiment except that the P layer and the N layer are reversed, and the semiconductor substrate 302a is N-type. However, the transistor 321
Uses the same NPN type as in the first embodiment. Light receiving element 2a
The cathode side (electrode 21) of the cathode is connected via the frame 1 to the cathode.
The common side is connected to the positive potential, and the anode side (other electrode 26) is connected to the input of the circuit element 3a. The power supply potential Vcc applied to the lead portion 12 gives the potential to each circuit in the circuit element 3a. The other lead frame 14 is connected to the ground potential. The infrared light modulated in this way passes through the light receiving element 2a, and the circuit element 3a gives an output signal Vss to the other lead frame 13. This cathode common type embodiment can also achieve the same effect as the anode common type embodiment.
【００１７】さらに本実施形態の受光モジュ−ルに用い
た受光素子２ａの光吸収効率特性を図５に従い説明す
る。この図に於て横軸は空乏層２４ａの厚さ（μｍ）で
あり、縦軸は光吸収効率（％）、すなわち発生フォトン
数を入射フォトン数で割ったものの百分率である。この
中で特性Ｂ、Ｃ、Ｄ、Ｅ、Ｆは受光素子２ａが受ける光
の波長であり、それぞれ７００、７８０、９００、９４
０、１０００ｎｍである。赤外光（９３０〜９５０ｎ
ｍ）を効率よく（９０％以上）受けるには空乏層の厚さ
が１１０μｍ以上必要な事が判かる。Further, the light absorption efficiency characteristics of the light receiving element 2a used in the light receiving module of this embodiment will be described with reference to FIG. In this figure, the horizontal axis represents the thickness (μm) of the depletion layer 24a, and the vertical axis represents the light absorption efficiency (%), that is, the percentage of the number of generated photons divided by the number of incident photons. Among these, the characteristics B, C, D, E, and F are the wavelengths of light received by the light receiving element 2a, and are 700, 780, 900, and 94, respectively.
0 and 1000 nm. Infrared light (930-950n
It can be seen that the thickness of the depletion layer is required to be 110 μm or more in order to receive m) efficiently (90% or more).
【００１８】従来の様に半導体基板上に受光素子を一体
化して製造すると、その受光素子内のＩ層はエピタキシ
ャル法で製造されるため、Ｉ層の不純物濃度は十分小さ
くならない。（１０16ｃｍ-3程度）故にＩ層の比抵抗が
小さいので空乏層の厚さを厚くする事ができない。これ
に対して本実施形態では、受光素子２ａは回路素子３ａ
と独立して製造されるので、受光素子２ａのＩ層２３ａ
の不純物濃度を１０14ｃｍ-3程度と小さく設定する事が
できる。故にＩ層２３ａの比抵抗が（５００〜３０００
Ωｃｍと）大きくなるので、空乏層の厚さは例えば１１
０μｍ以上と厚く製造する事ができる。従って赤外光を
効率よく（９０％以上）受光する事ができ、受光素子２
ａの感度が高くなり、応答速度が早くなる。When the light-receiving element is integrally manufactured on the semiconductor substrate as in the conventional case, the I layer in the light-receiving element is manufactured by the epitaxial method, so that the impurity concentration of the I layer does not become sufficiently low. Since the specific resistance of the I layer is small (about 10 16 cm -3 ), the depletion layer cannot be thickened. On the other hand, in the present embodiment, the light receiving element 2a is the circuit element 3a.
And the I layer 23a of the light receiving element 2a.
The impurity concentration of can be set as small as 10 14 cm -3 . Therefore, the specific resistance of the I layer 23a is (500 to 3000).
Ωcm), the thickness of the depletion layer is, for example, 11
It can be manufactured as thick as 0 μm or more. Therefore, infrared light can be received efficiently (90% or more), and the light receiving element 2
The sensitivity of a becomes high, and the response speed becomes fast.
【００１９】次にシ−ルドケ−スを用いた本発明の第３
実施形態を図６に従って説明する。以下の説明に於て第
１実施形態又は第２実施形態と同じ番号のものは同じ物
である事を示す。図６は、本実施形態に係る受光モジュ
−ルの斜視図であり、図１のフレ−ムの素子固定部１１
の延長上にコ字状の舌片部を設けこれを折り曲げたもの
である。すなわちフレ−ム７１の先端に設けた舌片部７
２に透孔７３を設け、その透孔７３が受光素子２又は２
ａの位置に対応するように、そして素子固定部と舌片部
７２の主表面が略平行になるように折り曲げ加工して舌
片部７２で樹脂６０の表面を覆う。透孔７３は受光素子
２又は２ａの光導入孔となり、受光素子２又は２ａと回
路素子３又は３ａはフレ−ム７１が少なくとも３面、図
の例では５面であるが、舌片部を箱型に加工しておけば
６面を覆う事ができる。またフレ−ムの薄い場合や、折
り曲げをしてもフレ−ムが少し元に戻り樹脂６０とフレ
−ムの間隔が大きくなるような場合には、樹脂６０の側
面に小さな突起を設け、舌片部７２の側面折曲部に孔も
しくは爪を設け、これらを係止させればフレ−ムは所定
の箱状に形成できる。このように、受光素子２と回路素
子３を共通に配置したフレームの一部を折り曲げてシー
ルド用の舌片部７２を形成したので、この舌片部７２も
受光素子２及び回路素子３の下面を覆うフレームと同電
位に保つ事ができ、受光素子２及び回路素子３の周囲を
広範囲にシールドする事ができる。Next, a third case of the present invention using a shield case
An embodiment will be described with reference to FIG. In the following description, the same numbers as those in the first or second embodiment indicate the same things. FIG. 6 is a perspective view of the light receiving module according to the present embodiment, and the element fixing portion 11 of the frame of FIG.
The U-shaped tongue piece is provided on the extension of and is bent. That is, the tongue piece 7 provided at the tip of the frame 71
2 is provided with a through hole 73, and the through hole 73 is used as the light receiving element 2 or 2
The surface of the resin 60 is covered with the tongue piece 72 by bending the element fixing portion and the main surface of the tongue piece 72 so as to correspond to the position a. The through hole 73 serves as a light introducing hole of the light receiving element 2 or 2a, and the light receiving element 2 or 2a and the circuit element 3 or 3a have at least three sides of the frame 71, five sides in the illustrated example, but the tongue portion is If processed into a box shape, 6 sides can be covered. If the frame is thin, or if the frame returns to its original shape even after being bent and the distance between the resin 60 and the frame becomes large, a small protrusion is provided on the side surface of the resin 60, and The frame can be formed in a predetermined box shape by providing a hole or a claw in the side surface bent portion of the piece 72 and locking them. In this way, a part of the frame in which the light receiving element 2 and the circuit element 3 are arranged in common is bent to form the tongue piece portion 72 for shielding. It is possible to keep the same potential as that of the frame that covers, and it is possible to shield the periphery of the light receiving element 2 and the circuit element 3 in a wide range.
【００２０】なおシ−ルドを設ける他の方法としては、
フレ−ムの上に素子が載置されこのフレ−ムが所定電位
に接続される事を利用して、このフレ−ムの一部を樹脂
から突出させ、樹脂全体を導電性熱収縮チュ−ブで覆
い、そのチュ−ブが突出したフレ−ムと電気的に接触す
るように構成する事でも構成できる。なお以上の説明に
於て、受光素子２、２ａとしてＰＩＮホトダイオ−ドを
例示したが、その他にホトトランジスタやホトダイオ−
ドなどにも適用可能である。As another method of providing the shield,
By utilizing the fact that an element is placed on the frame and this frame is connected to a predetermined potential, a part of this frame is projected from the resin, and the entire resin is subjected to a conductive heat shrinkage tube. Alternatively, the tube may be covered with a tube and the tube may be electrically contacted with the protruding frame. In the above description, PIN photodiodes are illustrated as the light receiving elements 2 and 2a, but other phototransistors or photodiodes may be used.
It can also be applied to such devices.
【００２１】上述の実施形態によれば、同一導電型の半
導体基板を有する受光素子と回路素子をそれぞれ電極を
介して同一フレ−ムに載置する。故に受光素子と回路素
子の電位が一定電位に固定される事で、いわゆるフロ−
ティングによる出力変動がない。そして、両素子を直接
接続するので微弱信号を扱う部分が十分近接し、関係す
る面積も小さくなる。故に耐雑音特性が良好となる。更
に受光素子を回路素子と独立して設けるので、受光素子
のＩ層の不純物濃度を小さくする事により、Ｉ層の比抵
抗が大きくなる。故に空乏層の厚みが大きくなり、光吸
収効率が高くなるので受光素子の感度が高くなり、応答
速度も早くなる。また、プリント基板を用いないでフレ
−ムに直接素子を載置するのでモジュ−ルが小型とな
る。According to the above-described embodiment, the light receiving element and the circuit element having the semiconductor substrate of the same conductivity type are mounted on the same frame through the electrodes. Therefore, the electric potential of the light receiving element and the circuit element is fixed to a constant electric potential, which leads to the so-called flow.
There is no output fluctuation due to Since both elements are directly connected, the portions handling weak signals are sufficiently close to each other, and the related area is also small. Therefore, the noise resistance characteristic becomes good. Further, since the light receiving element is provided independently of the circuit element, the specific resistance of the I layer is increased by reducing the impurity concentration of the I layer of the light receiving element. Therefore, the thickness of the depletion layer increases and the light absorption efficiency increases, so that the sensitivity of the light receiving element increases and the response speed also increases. Further, since the element is mounted directly on the frame without using a printed board, the module becomes small.
【００２２】さらに、受光素子及び回路素子を配置した
フレームと同電位の舌片部によって樹脂を覆う事でシ−
ルド効果を簡単にかつ確実に得る事ができる。その場
合、透孔によって受光素子には光が導かれるが同じ平面
内にある回路素子はフレ−ムにより光が遮られるので、
回路素子が光エネルギ−によって誤動作する事はない。
また本発明は回路素子の周辺を遮光性樹脂で覆う事によ
り、光が遮ぎられるので、回路素子が光エネルギ−によ
って誤動作しない。そして受光素子を透光性樹脂で覆う
ので、受光素子には適正な光が導かれる。以上のように
上記実施形態によれば、耐雑音特性が良好な受光モジュ
ールを提供する事ができる。また、受光素子の感度が高
く、応答速度も早い受光モジュールを提供する事ができ
る。また、小型で誤動作が少ない受光モジュールを提供
する事ができる。Further, by covering the resin with a tongue portion having the same potential as the frame in which the light receiving element and the circuit element are arranged, the seal is formed.
The rudder effect can be easily and surely obtained. In that case, the light is guided to the light receiving element by the through hole, but the light is blocked by the frame for the circuit elements in the same plane.
The circuit element does not malfunction due to light energy.
Further, in the present invention, the light is blocked by covering the periphery of the circuit element with the light-shielding resin, so that the circuit element does not malfunction due to light energy. Since the light receiving element is covered with the transparent resin, proper light is guided to the light receiving element. As described above, according to the above-described embodiment, it is possible to provide a light-receiving module having excellent noise resistance characteristics. Further, it is possible to provide a light receiving module in which the light receiving element has high sensitivity and a fast response speed. In addition, it is possible to provide a small-sized light receiving module with few malfunctions.
【００２３】[0023]
【発明の効果】本発明は、受光素子とその出力信号を増
幅して出力する回路素子を備えるので、両者を単独に製
作する際、最適の比抵抗を選択する事により受光素子の
出力を高めて応答速度を早くできる。さらに、受光素子
と回路素子の両方を金属製のリードフレームの素子固定
部に固着するとともに光導入孔を有する舌片部によって
覆うので、このリードフレームを素子の上下を覆うシー
ルド板として機能させ、耐雑音特性が良好な受光モジュ
ールとする事ができる。Since the present invention comprises a light receiving element and a circuit element for amplifying and outputting the output signal thereof, when the both are manufactured independently, the output of the light receiving element is increased by selecting the optimum specific resistance. Response speed can be increased. Furthermore, since both the light receiving element and the circuit element are fixed to the element fixing portion of the metallic lead frame and covered by the tongue portion having the light introduction hole, this lead frame is made to function as a shield plate that covers the upper and lower sides of the element, It is possible to obtain a light receiving module having good noise resistance characteristics.
【００２４】また、素子を覆う舌片部は、リードフレー
ムの素子固定部の延長上部分を折り曲げ加工して設けら
れるので、別途シールド板を装着する場合に比べて組み
立て作業性が良好になる。Further, since the tongue portion for covering the element is provided by bending the extension upper portion of the element fixing portion of the lead frame, the assembling workability is improved as compared with the case where a shield plate is separately attached.
【００２５】特に、舌片部には受光素子の光導入孔が設
けられているので、一般的なシールド構造では得られな
い受光モジュールに最適なシールド構造を提供する事が
できる。In particular, since the tongue portion is provided with the light introduction hole of the light receiving element, it is possible to provide the optimum shield structure for the light receiving module which cannot be obtained by the general shield structure.
【００２６】また、リードフレームが、受光素子あるい
は回路素子に接地電位を与える構成とすると、受光素子
あるいは回路素子に接地電位を与える構造とシールド用
に接地電位を与える構成を兼用して構成の簡素化を図る
事ができる。さらにまた、受光モジュールの耐雑音特性
をより良好にする事ができる。If the lead frame is configured to apply the ground potential to the light-receiving element or the circuit element, the structure for applying the ground potential to the light-receiving element or the circuit element and the structure for applying the ground potential for the shield are combined to simplify the configuration. Can be promoted. Furthermore, the noise resistance of the light receiving module can be improved.
【図１】本発明の第１実施形態に係る受光モジュ−ルの
平面断面図である。FIG. 1 is a plan sectional view of a light receiving module according to a first embodiment of the present invention.
【図２】図１のＡＡ断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図３】本発明の第１実施形態に係る受光モジュ−ルの
ブロック図である。FIG. 3 is a block diagram of a light receiving module according to the first embodiment of the present invention.
【図４】本発明の第２実施形態に係る受光モジュ−ルの
ブロック図である。FIG. 4 is a block diagram of a light receiving module according to a second embodiment of the present invention.
【図５】本発明の第２実施形態に係る受光モジュ−ルの
光吸収効率特性図である。FIG. 5 is a light absorption efficiency characteristic diagram of the light receiving module according to the second embodiment of the present invention.
【図６】本発明の第３実施形態に係る受光モジュ−ルの
斜視図である。FIG. 6 is a perspective view of a light receiving module according to a third embodiment of the present invention.
１ フレ−ム ２、２ａ 受光素子 ３、３ａ 回路素子 ５ 遮光性樹脂 ６ 樹脂 1 frame 2, 2a Light receiving element 3,3a Circuit element 5 Light-shielding resin 6 resin
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西村 晋 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 (72)発明者 前田 晋 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 (72)発明者 田中 堅太郎 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 (72)発明者 山根 幹仁 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 Ｆターム(参考） 5F067 AA00 BD00 DB01 5F088 AA03 AB02 BA02 BA03 BA15 BB01 CB09 GA04 JA02 JA06 JA10 KA02 LA01 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Shin Nishimura 3-201 Minamiyoshikata, Tottori City, Tottori Prefecture Tottori Sanyo Electric Co., Ltd. (72) Inventor Shin Maeda 3-201 Minamiyoshikata, Tottori City, Tottori Prefecture Tottori Sanyo Electric Co., Ltd. (72) Inventor Kentaro Tanaka 3-201 Minamiyoshikata, Tottori City, Tottori Prefecture Tottori Sanyo Electric Co., Ltd. (72) Inventor Mikihito Yamane 3-201 Minamiyoshikata, Tottori City, Tottori Prefecture Tottori Sanyo Electric Co., Ltd. F term (reference) 5F067 AA00 BD00 DB01 5F088 AA03 AB02 BA02 BA03 BA15 BB01 CB09 GA04 JA02 JA06 JA10 KA02 LA01
Claims (3)
定部の延長上に設けられた舌片部とを一体に有するリー
ドフレームであって、前記舌片部は光導入孔が設けられ
ているとともに、前記素子固定部と平行になるように折
り曲げ加工されるものである事を特徴とするリードフレ
ーム。1. A lead frame integrally having a lead portion, a wide element fixing portion, and a tongue piece portion provided on an extension of the element fixing portion, wherein the tongue piece portion is provided with a light introducing hole. In addition, the lead frame is bent so as to be parallel to the element fixing portion.
定部の延長上に設けられた舌片部とを一体に有する第1
のリードフレームと、前記リード部と平行な第２のリー
ドフレームとを備え、前記舌片部は光導入孔が設けられ
ているとともに、前記素子固定部と平行になるように折
り曲げ加工されるものである事を特徴とするリードフレ
ーム。2. A first unit integrally including a lead portion, a wide element fixing portion, and a tongue piece portion provided on an extension of the element fixing portion.
A lead frame and a second lead frame parallel to the lead portion, wherein the tongue portion is provided with a light introducing hole and is bent so as to be parallel to the element fixing portion. Lead frame characterized by being
定部の延長上に設けられた舌片部とを一体に有する金属
製のリードフレームと、受光素子と、前記受光素子の出
力信号を増幅して出力する回路素子とを備え、前記受光
素子と前記受光素子は前記素子固定部に接着剤によって
固定され、前記舌片部は光導入孔が設けられているとと
もに前記素子固定部と平行になるように折り曲げられて
いる事を特徴とする受光モジュール。3. A metal lead frame integrally including a lead portion, a wide element fixing portion, and a tongue piece portion provided on an extension of the element fixing portion, a light receiving element, and an output signal of the light receiving element. A circuit element that amplifies and outputs the light receiving element and the light receiving element are fixed to the element fixing portion by an adhesive, and the tongue portion is provided with a light introducing hole and the element fixing portion. A light receiving module characterized by being bent in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003141766A JP2003332594A (en) | 1991-03-07 | 2003-05-20 | Lead frame and light receiving module comprising it |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4178991 | 1991-03-07 | ||
| JP3-41789 | 1991-03-07 | ||
| JP2003141766A JP2003332594A (en) | 1991-03-07 | 2003-05-20 | Lead frame and light receiving module comprising it |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002141229A Division JP3696178B2 (en) | 1991-03-07 | 2002-05-16 | Light receiving module for optical remote control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003332594A true JP2003332594A (en) | 2003-11-21 |
Family
ID=29713513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003141766A Pending JP2003332594A (en) | 1991-03-07 | 2003-05-20 | Lead frame and light receiving module comprising it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003332594A (en) |
-
2003
- 2003-05-20 JP JP2003141766A patent/JP2003332594A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4318115A (en) | Dual junction photoelectric semiconductor device | |
| JP3177287B2 (en) | Light receiving module | |
| JP2998646B2 (en) | Light receiving operation element | |
| JP3516342B2 (en) | Light receiving module for optical remote control | |
| JP3696094B2 (en) | Light receiving module | |
| JP2003332594A (en) | Lead frame and light receiving module comprising it | |
| JP3696177B2 (en) | Light receiving module for optical remote control | |
| JP2003023164A (en) | Light receiving module | |
| US6989522B2 (en) | Light-receiving module and light-receiving device having malfunction preventing structure | |
| JP2003318420A (en) | Light receiving module | |
| JP3583815B2 (en) | Light receiving element | |
| JPH03280567A (en) | Infrared sensor | |
| JP3021952B2 (en) | Light receiving element | |
| JP4036850B2 (en) | Receiver module | |
| JP3497977B2 (en) | Light receiving element and optical coupling device using the same | |
| JPH02137275A (en) | Photo coupler | |
| JPH10270742A (en) | Photodiode | |
| JP3024188B2 (en) | Light receiving device | |
| JPS60177685A (en) | Semiconductor device | |
| JPH07273723A (en) | Light reception module | |
| JPS6244706B2 (en) | ||
| JP3609544B6 (en) | Receiver | |
| JP2576383Y2 (en) | Optical semiconductor device | |
| JP3594418B6 (en) | Light receiving element | |
| JPS6222273B2 (en) |