JP2001210915A5 - - Google Patents
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- Publication number
- JP2001210915A5 JP2001210915A5 JP2000014289A JP2000014289A JP2001210915A5 JP 2001210915 A5 JP2001210915 A5 JP 2001210915A5 JP 2000014289 A JP2000014289 A JP 2000014289A JP 2000014289 A JP2000014289 A JP 2000014289A JP 2001210915 A5 JP2001210915 A5 JP 2001210915A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000014289A JP2001210915A (ja) | 2000-01-24 | 2000-01-24 | 半導体発光装置 |
TW090101294A TW497308B (en) | 2000-01-24 | 2001-01-19 | Semiconductor light emitting device |
US09/765,580 US6492660B2 (en) | 2000-01-24 | 2001-01-22 | Semiconductor light emitting device |
KR1020010003610A KR100763424B1 (ko) | 2000-01-24 | 2001-01-22 | 반도체 발광 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000014289A JP2001210915A (ja) | 2000-01-24 | 2000-01-24 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001210915A JP2001210915A (ja) | 2001-08-03 |
JP2001210915A5 true JP2001210915A5 (ja) | 2006-11-02 |
Family
ID=18541767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000014289A Pending JP2001210915A (ja) | 2000-01-24 | 2000-01-24 | 半導体発光装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6492660B2 (ja) |
JP (1) | JP2001210915A (ja) |
KR (1) | KR100763424B1 (ja) |
TW (1) | TW497308B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100902109B1 (ko) * | 2001-04-12 | 2009-06-09 | 니치아 카가쿠 고교 가부시키가이샤 | 질화 갈륨계 화합물 반도체 소자 |
US6806197B2 (en) * | 2001-08-07 | 2004-10-19 | Micron Technology, Inc. | Method of forming integrated circuitry, and method of forming a contact opening |
TWI262606B (en) * | 2001-08-30 | 2006-09-21 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor-element and its production method |
KR100396675B1 (ko) * | 2001-11-07 | 2003-09-02 | 엘지전자 주식회사 | 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법 |
JP2003332688A (ja) | 2002-03-08 | 2003-11-21 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体レーザ |
JP4090768B2 (ja) | 2002-03-20 | 2008-05-28 | 株式会社日立製作所 | 半導体レーザ素子 |
JP4077348B2 (ja) * | 2003-03-17 | 2008-04-16 | 松下電器産業株式会社 | 半導体レーザ装置およびそれを用いた光ピックアップ装置 |
JP2007012729A (ja) * | 2005-06-29 | 2007-01-18 | Toshiba Corp | 窒化ガリウム系半導体レーザ装置 |
JP2007109843A (ja) * | 2005-10-13 | 2007-04-26 | Rohm Co Ltd | 半導体レーザ製造方法及び半導体レーザ |
KR100770440B1 (ko) * | 2006-08-29 | 2007-10-26 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP2008066476A (ja) * | 2006-09-06 | 2008-03-21 | Toshiba Corp | 半導体レーザ装置 |
TWI384657B (zh) * | 2009-07-15 | 2013-02-01 | Ind Tech Res Inst | 氮化物半導體發光二極體元件 |
JP5660940B2 (ja) * | 2010-04-27 | 2015-01-28 | 住友電工デバイス・イノベーション株式会社 | 光半導体装置の製造方法 |
US9048363B2 (en) * | 2013-05-20 | 2015-06-02 | International Business Machines Corporation | Elemental semiconductor material contact for high indium content InGaN light emitting diodes |
US8933434B2 (en) * | 2013-05-20 | 2015-01-13 | International Business Machines Company | Elemental semiconductor material contact for GaN-based light emitting diodes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
CN1297016C (zh) * | 1997-01-09 | 2007-01-24 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
JPH11251685A (ja) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | 半導体レーザ |
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2000
- 2000-01-24 JP JP2000014289A patent/JP2001210915A/ja active Pending
-
2001
- 2001-01-19 TW TW090101294A patent/TW497308B/zh not_active IP Right Cessation
- 2001-01-22 KR KR1020010003610A patent/KR100763424B1/ko active IP Right Grant
- 2001-01-22 US US09/765,580 patent/US6492660B2/en not_active Expired - Lifetime