JP2001176795A5 - - Google Patents

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Publication number
JP2001176795A5
JP2001176795A5 JP2000368421A JP2000368421A JP2001176795A5 JP 2001176795 A5 JP2001176795 A5 JP 2001176795A5 JP 2000368421 A JP2000368421 A JP 2000368421A JP 2000368421 A JP2000368421 A JP 2000368421A JP 2001176795 A5 JP2001176795 A5 JP 2001176795A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2000368421A
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JP4805448B2 (ja
JP2001176795A (ja
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Priority claimed from US09/452,878 external-priority patent/US6503693B1/en
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Publication of JP2001176795A publication Critical patent/JP2001176795A/ja
Publication of JP2001176795A5 publication Critical patent/JP2001176795A5/ja
Application granted granted Critical
Publication of JP4805448B2 publication Critical patent/JP4805448B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000368421A 1999-12-02 2000-12-04 フォトレジストのｕｖ支援による化学的修飾 Expired - Fee Related JP4805448B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/452,878 US6503693B1 (en) 1999-12-02 1999-12-02 UV assisted chemical modification of photoresist
US09/452878 1999-12-02

Publications (3)

Publication Number Publication Date
JP2001176795A JP2001176795A (ja) 2001-06-29
JP2001176795A5 true JP2001176795A5 (ja) 2008-01-24
JP4805448B2 JP4805448B2 (ja) 2011-11-02

Family

ID=23798317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000368421A Expired - Fee Related JP4805448B2 (ja) 1999-12-02 2000-12-04 フォトレジストのｕｖ支援による化学的修飾

Country Status (5)

Country Link
US (1) US6503693B1 (ja)
EP (1) EP1117008A3 (ja)
JP (1) JP4805448B2 (ja)
KR (1) KR100563242B1 (ja)
TW (1) TWI261735B (ja)

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US6730458B1 (en) * 2003-03-03 2004-05-04 Samsung Electronics Co., Ltd. Method for forming fine patterns through effective glass transition temperature reduction
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US7258965B2 (en) * 2003-12-30 2007-08-21 Intel Corporation Pre-exposure of patterned photoresist films to achieve critical dimension reduction during temperature reflow
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
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US7343666B2 (en) 2004-06-30 2008-03-18 Hitachi Global Storage Technologies Netherlands B.V. Methods of making magnetic write heads with use of linewidth shrinkage techniques
US20060096081A1 (en) * 2004-06-30 2006-05-11 Hitachi Global Storage Technologies Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors
US7395595B2 (en) * 2005-04-19 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing P3 layer of a perpendicular magnetic write head
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US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
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JP5448536B2 (ja) 2009-04-08 2014-03-19 東京エレクトロン株式会社 レジスト塗布現像装置およびレジスト塗布現像方法、並びにレジスト膜処理装置およびレジスト膜処理方法
JP5193121B2 (ja) * 2009-04-17 2013-05-08 東京エレクトロン株式会社 レジスト塗布現像方法
JP5704093B2 (ja) * 2011-03-01 2015-04-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
KR20130120586A (ko) * 2012-04-26 2013-11-05 삼성전자주식회사 패턴 형성 방법
US9875916B2 (en) * 2012-07-09 2018-01-23 Tokyo Electron Limited Method of stripping photoresist on a single substrate system
US9966280B2 (en) 2012-10-05 2018-05-08 Tokyo Electron Limited Process gas generation for cleaning of substrates
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
TWI526257B (zh) * 2012-11-27 2016-03-21 東京威力科創股份有限公司 使用噴嘴清洗基板上之一層的控制
JP6145065B2 (ja) * 2014-03-19 2017-06-07 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
KR101989707B1 (ko) * 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
US9520270B2 (en) * 2014-07-25 2016-12-13 Tokyo Eelctron Limited Direct current superposition curing for resist reflow temperature enhancement
JP6239466B2 (ja) * 2014-08-15 2017-11-29 東京エレクトロン株式会社 半導体装置の製造方法
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム

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