IT1392270B1 - Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia - Google Patents
Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampiaInfo
- Publication number
- IT1392270B1 IT1392270B1 ITVA2008A000061A ITVA20080061A IT1392270B1 IT 1392270 B1 IT1392270 B1 IT 1392270B1 IT VA2008A000061 A ITVA2008A000061 A IT VA2008A000061A IT VA20080061 A ITVA20080061 A IT VA20080061A IT 1392270 B1 IT1392270 B1 IT 1392270B1
- Authority
- IT
- Italy
- Prior art keywords
- filamentose
- manufacture
- carbon
- devices
- relatively wide
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002086 nanomaterial Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
- Inorganic Fibers (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA2008A000061A IT1392270B1 (it) | 2008-12-12 | 2008-12-12 | Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia |
US12/627,426 US8048785B2 (en) | 2008-12-12 | 2009-11-30 | Method of fabricating nanosized filamentary carbon devices over a relatively large-area |
US13/269,923 US8212234B2 (en) | 2008-12-12 | 2011-10-10 | Method of fabricating nanosized filamentary carbon devices over a relatively large-area |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITVA2008A000061A IT1392270B1 (it) | 2008-12-12 | 2008-12-12 | Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia |
Publications (2)
Publication Number | Publication Date |
---|---|
ITVA20080061A1 ITVA20080061A1 (it) | 2010-06-13 |
IT1392270B1 true IT1392270B1 (it) | 2012-02-22 |
Family
ID=40933826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITVA2008A000061A IT1392270B1 (it) | 2008-12-12 | 2008-12-12 | Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia |
Country Status (2)
Country | Link |
---|---|
US (2) | US8048785B2 (it) |
IT (1) | IT1392270B1 (it) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106989828A (zh) * | 2016-01-20 | 2017-07-28 | 优利斯公司 | 制造具有微囊的电磁辐射探测器的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7385262B2 (en) * | 2001-11-27 | 2008-06-10 | The Board Of Trustees Of The Leland Stanford Junior University | Band-structure modulation of nano-structures in an electric field |
JP4627188B2 (ja) * | 2003-05-22 | 2011-02-09 | 富士通株式会社 | 電界効果トランジスタ及びその製造方法 |
US7345296B2 (en) * | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
US7279433B2 (en) * | 2004-09-20 | 2007-10-09 | Freescale Semiconductor, Inc. | Deposition and patterning of boron nitride nanotube ILD |
KR100749751B1 (ko) * | 2006-08-02 | 2007-08-17 | 삼성전자주식회사 | 트랜지스터 및 그 제조 방법 |
-
2008
- 2008-12-12 IT ITVA2008A000061A patent/IT1392270B1/it active
-
2009
- 2009-11-30 US US12/627,426 patent/US8048785B2/en not_active Expired - Fee Related
-
2011
- 2011-10-10 US US13/269,923 patent/US8212234B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106989828A (zh) * | 2016-01-20 | 2017-07-28 | 优利斯公司 | 制造具有微囊的电磁辐射探测器的方法 |
Also Published As
Publication number | Publication date |
---|---|
US8212234B2 (en) | 2012-07-03 |
US8048785B2 (en) | 2011-11-01 |
ITVA20080061A1 (it) | 2010-06-13 |
US20120025166A1 (en) | 2012-02-02 |
US20100264399A1 (en) | 2010-10-21 |
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