IN153170B - - Google Patents
Info
- Publication number
- IN153170B IN153170B IN246/CAL/81A IN246CA1981A IN153170B IN 153170 B IN153170 B IN 153170B IN 246CA1981 A IN246CA1981 A IN 246CA1981A IN 153170 B IN153170 B IN 153170B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17178780A | 1980-07-24 | 1980-07-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN153170B true IN153170B (fr) | 1984-06-09 |
Family
ID=22625139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN246/CAL/81A IN153170B (fr) | 1980-07-24 | 1981-03-07 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5753978A (fr) |
BR (1) | BR8101653A (fr) |
CA (1) | CA1165467A (fr) |
DE (1) | DE3111598A1 (fr) |
FR (1) | FR2487575A1 (fr) |
GB (1) | GB2081009A (fr) |
IN (1) | IN153170B (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH670332A5 (fr) * | 1986-09-17 | 1989-05-31 | Bbc Brown Boveri & Cie | |
DE59003052D1 (de) * | 1989-05-18 | 1993-11-18 | Asea Brown Boveri | Halbleiterbauelement. |
GB0318146D0 (en) | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
-
1981
- 1981-03-07 IN IN246/CAL/81A patent/IN153170B/en unknown
- 1981-03-09 CA CA000372536A patent/CA1165467A/fr not_active Expired
- 1981-03-20 BR BR8101653A patent/BR8101653A/pt unknown
- 1981-03-24 DE DE19813111598 patent/DE3111598A1/de not_active Withdrawn
- 1981-03-24 GB GB8109087A patent/GB2081009A/en not_active Withdrawn
- 1981-06-23 FR FR8112337A patent/FR2487575A1/fr active Granted
- 1981-07-21 JP JP11306981A patent/JPS5753978A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2081009A (en) | 1982-02-10 |
JPS5753978A (ja) | 1982-03-31 |
FR2487575A1 (fr) | 1982-01-29 |
DE3111598A1 (de) | 1982-03-11 |
BR8101653A (pt) | 1982-08-17 |
CA1165467A (fr) | 1984-04-10 |
FR2487575B1 (fr) | 1984-06-15 |