GB2464219A

GB2464219A - Buried Heterostructure EAM

Info

Publication number: GB2464219A
Application number: GB0920854A
Authority: GB
Inventors: Dave Moodie
Original assignee: Centre for Integrated Photonics Ltd
Current assignee: Centre for Integrated Photonics Ltd
Priority date: 2007-09-10
Filing date: 2007-09-10
Publication date: 2010-04-14
Anticipated expiration: 2027-09-10
Also published as: GB0920854D0; GB2464219B

Abstract

A buried heterostructure electroabsorption modulator (EAM) comprises an absorption layer provided between at least one layer of p-doped semiconductor and at least one layer of n-doped semiconductor, wherein the absorption layer is formed in a mesa with a width of between 0.6 and 3 microns and the thickness of the absorption layer is between 9 and 65 nm.

Description

OPTOELECTRONIC COMPONENTS

Field of the Invention

The present invention relates to semiconductor optoelectronic components and in particular to electroabsorption modulators (EAM).

Background to the Invention

Electroabsorption modulators (EAIVIs) typically have optical absorption regions comprising multiple quantum wells (MQW5) or bulk semiconductor. In either case the typical absorption region thickness is generally in the range of 0.12 -0.28 tm with the MQW devices typically having 8-15 wells. They are generally waveguide devices in which the absorption region also serves as an optical waveguiding layer. These typical thicknesses result in a relatively tightly confined mode which is efficient in that a high overlap of electrical and optical fields is achieved in the absorption region, A disadvantage however is that the mode size in the modulator is generally significantly smaller than that of single mode fibre.

Commonly used approaches to overcome this disadvantage use either a lens-ended fibre or a free space lens to increase the coupling efficiency. This makes the packaging process relatively expensive as the alignment tolerances are relatively small.

Another approach is to use a waveguide taper to increase the mode size of the EAM at the facet. There have been several designs proposed for producing large spot' active semiconductor optoelectronic devices (e.g. lasers, semiconductors, photodiodes, modulators); all incorporate optical mode transformers (see I. Lealman et al, "1.5 tm InGaAsP/InP large mode size laser for high coupling efficiency to cleaved single mode fibre", Semiconductor Laser Conference, 1994., 14th IEEE International, 19-23 Sept.

1994 Page(s):189 -190; and I. Moerman et al, "A review on fabrication technologies for the monolithic integration of tapers with 111-V semiconductor devices", IEEE Journal of Selected Topics in Quantum Electronics, Volume 3, Issue 6, Dec. 1997 Page(s):1308 - 1320). These designs often necessitate multiple stages of photolithography and etching of the semiconductor, which reduces yields due to the necessary alignment tolerances, and often involve re-growth steps. The tapers also impact performance by adding around 1-3 dB of optical loss per taper.

An EAM suitable for 10 Gbit/s modulation with only four quantum wells, each 13 nm thick in a buried heterostructure geometry has been reported (K. Wakita et al, "Very low insertion loss (<5dB) and high speed InGaAs / InAlAs MQW modulators buried in semi-insulating InP" Optical Fibre Communications (OFC'97) Technical Digest, pp.l3'7-l38, 1997). A relatively dilute optical mode profile and <5 dB insertion loss was reported in a 40 Gbit/s buried heterostructure EAM with 10 wells (D. G. Moodie et al, "Applications of electroabsorption modulators in high bit-rate extended reach transmission systems", OFC 2003, Invited Paper TuP1, pp. 267-268, 2003).

A 2.2 tm wide ridge waveguide EAM test structure with three wells, each 8 nm thick has also been reported (I. K. Czajkowski et al, "Strain-compensated MQW electroabsorption modulator for increased optical power handling," El. Lett., vol. 30, no. 11, pp. 900-90 1, 1994), although in this case the reason for only having three wells was because of the problems associated with growing a large number of strained wells'. Ridge EAMs of width 2-4 pm and only five quantum wells, each 5.5 nm thick with 8 nm thick barriers have been reported (S. Oshiba et al, "Low drive voltage MQW electroabsorption modulator for optical short pulse generation," IEEE JQE, vol. 34, no. 2, pp. 277-281, 1998). Again the ridge width is thought to be too narrow to expand the mode to get good matching to the output of a cleaved SMF-28� fibre. An early MQW EAM paper (T. H. Wood et al, "100 Ps waveguide multiple quantum well (MQW) optical modulator with 10:1 onloff ratio," El. Lett., vol. 21, no. 16, PP. 693-694, 1985) used two quantum wells each 9.4 nm thick in a 40 m wide mesa, this mesa is so wide its performance was approximately that of a one-dimensional slab waveguide in cross-section and again this design is not expected to be suitable for low loss coupling to cleaved fibre.

The present invention, at least in its preferred embodiments, seeks to improve on known constructions.

Summary of the Invention

Accordingly, this invention provides an electroabsorption modulator comprising an absorption layer between at least one layer of p-doped semiconductor and at least one layer of n-doped semiconductor. The layers form a ridge waveguide structure. The thickness of the absorption layer is between 9 and 60 nm and the width of the ridge is between 4.5 and 12 microns.

Thus, the invention provides an electroabsorption modulator with a relatively wide ridge structure and a relatively thin absorption layer. Typically, ridges structures with such dimensions have not been used because of their relatively high capacitance. However, in accordance with the present invention, it has been found that the relatively thin absorption layer provides for a weakly guided optical mode that spreads out into the surrounding semiconductor material. The result is a relatively difflise optical mode that is particularly well-suited for coupling into a single mode fibre. This advantage and the simplicity of construction of electroabsorption modulator are sufficient to overcome any disadvantages due to higher capacitance.

The absorption layer may be formed of bulk semiconductor. In the preferred embodiment, the absorption layer comprises multiple quantum wells. In particular, the absorption layer may comprise three or fewer quantum wells, for example two or three quantum wells. The sum of the thicknesses of the multiple quantum wells may be greater than 9 nm and/or less than 40 nm. In particular embodiments, the sum of the thicknesses of the multiple quantum wells may be greater than 12 nm or even greater than 18 nm.

Increasing the thickness of the quantum wells and thus the absorption layer reduces the capacitance of the absorption layer. However, if the absorption layer is too thick, the optical mode becomes flatter, which is less desirable for effective coupling into a single mode fibre. Thus, the sum of the thicknesses of the multiple quantum wells may be less than 30 nm or even less than 25 nm.

In particular embodiments, the absorption layer may have a thickness greater than 20 nm.

Similarly, in particular embodiments, the absorption layer may have a thickness less than nm, less than 40 nm or even less than 23 nm. Typically, the absorption layer is a layer of relatively low doping. For example, the level of p and n-type dopants may be less than 1 x i07 cm3 in the absorption layer. In the layers of p-doped semiconductor and n-doped semiconductor, the level of p and n-type dopants is typically greater than 1 x 1017 cm3.

The absorption layer can be considered, therefore to be a layer of low doping levels between two more highly doped layers.

A depletion region containing the absorption layer may include additional layers, in addition to the layer making up the multiple quantum wells absorption layer, for example.

It is possible for the depletion region to include a spacer layer of semiconductor material, such as InP between the active semiconductor and the surrounding doped layers. The thickness of the spacer layers can be selected to reduce the capacitance of the depletion layer to the required level.

In particular embodiments, the width of the ridge may be greater than 5.5 microns and/or less than 8 microns. A narrower ridge reduces the capacitance of the absorption layer, but also reduces the width of the optical mode.

Viewed from a further aspect, the invention provides a buried heterostructure electroabsorption modulator comprising an absorption layer between at least one layer of p-doped semiconductor and at least one layer of n-doped semiconductor, wherein the absorption layer is formed in a mesa with a width of between 0.6 and 3 microns and the thickness of the absorption layer is between 9 and 65 nm.

According to this aspect of the invention, it has been found that a relatively diffuse optical mode can be achieved using a buried heterostructure geometry.

In the electroabsorption modulator according to this aspect of the invention, the absorption layer may comprise multiple quantum wells, in particular two or three quantum wells. Alternatively, the absorption layer may comprise bulk semiconductor.

The sum of the thicknesses of the multiple quantum wells may be greater than 20 nm and/or less than 40 nm. In particular embodiments, the width of the mesa is greater than 1 micron and/or less than 2 microns.

According an invention described herein there is provided an electroabsorption modulator where the total thickness of the bulk absorption layer or multiple quantum well absorption region is between 9 and 23 nm.

An electroabsorption modulator according to the invention can be designed to have a coupling loss to cleaved SMF-28� optical fibre of < 3 dB, preferably <2 dB, without the need for a tapered waveguide.

The electroabsorption modulator may be a reflective electroabsorption modulator or a dual function electroabsorption modulator photodiode structure.

Brief Description of the Drawings

An embodiment of the invention will now be described by way of example only and with reference to the accompanying drawings, in which: Figure 1 is a schematic cross section through an electroabsorption modulator structure according to an embodiment of the invention in a plane perpendicular to the direction of optical propagation; Figure 2 shows 10% intensity contours of the simulated optical mode at 1550 nm wavelength and TE polarisation for the structure of Figure 1; and Figure 3 shows a scanning electron microscope profile of a fabricated dilute mode ridge electroabsorption modulator with 6.4 um ridge width according to an embodiment of the invention.

Detailed Description of an Embodiment

The invention provides an electroabsorption modulator with an optical mode dilute enough that coupling to lens fibres can be achieved with reasonably low losses (<3 dB) without the need for a taper. The novel device design has the potential to significantly reduce the cost of packaged single electroabsorption modulators and EAM arrays by significantly increasing their optical mode size to relax alignment tolerances to the input / output fibres. Optoelectronic components designed to have an expanded optical mode profile matched to a cleaved optical fibre can be realised in designs of minimal complexity/cost in which no optical mode transformers or tapers are required.

A preferred embodiment of an electroabsoiption modulator according to the invention is shown schematically in Figure 1. In Figure 1, the electroabsorption modulator comprises, in sequence, a metallic contact layer 1, a dielectric layer 2 and a p+ InGaAs contact layer 3. Two layers of p-type InP 4, 6 are separated by a p-type InGaAsP layer 5 whose refractive index is higher than that of the surrounding InP and whose purpose is to help expand the optical mode in the vertical direction.

The depletion region 7 is a region of the device with low intentional doping that is intentionally depleted when a reverse bias is applied across the PiN junction. Levels of p and n type dopants are preferably less than 1 x iO'7 cm3 in this region. In this embodiment the depletion region 7 includes several layers of semiconductor: a multiple quantum well (MQW) with two wells preferably composed of InGaAs with three barrier regions preferably composed of InAlAs; a thin InGaAsP layer immediately above and below the MQW, which is otherwise known as the absorption layer; and InP layers on the outside of the InGaAsP layers. The total thickness of depletion region 7 selected to reduce the capacitance of the device to the required value.

Below the depletion region 7, two n-type InP layers 8 and 10 are separated by a thin n-type InGaAsP layer 9 whose primary purpose is to act as an etch stop layer. Below the etch stop layer, undoped or semi-insulating InP layers 11, 13 are separated by an undoped or semi-insulating InGaAsP layer 12 whose refractive index is higher than that of the surrounding InP and whose purpose is to help expand the optical mode in the vertical direction.

In this embodiment, the ridge width is 7tm and the ridge height is 3. 7tm. The absorber layer material in depletion region 7 contains only two quantum wells and three barriers and has a total thickness of approximately 37 nm. Alternatively, bulk or quantum dot absorber regions of comparable thickness could be used. Un-etched regions may also be used at various points on the device besides the ridge waveguide for mechanical reasons.

The simulated optical mode of this structure is shown in Figure. 2. Confinement factors within the depletion region 7 are very low (<2%) and so optical power handling is extremely good. Simulated FWHM in intensity vertical/horizontal mode profiles are 9.3 degrees / 9.1 degrees for both TE and TM giving predicted coupling losses to cleaved fibre of 1.6-1.8 dB. The depletion region thickness is assumed to be 0. 11tm which is unusually thin and this means that absorption happens of a narrow voltage range giving maximum dT/dV values of-0.4 V-i in a 340 pm long reflective EAM (using values of absorption versus voltage achieved in other MQW EAMs) which is a significant improvement over existing devices and would translate into lower system losses in analogue antenna remoting applications, for example. Based on simulated impedances of this structure a 2 GHz 3 dBe bandwidth is expected when matched to 50 Ohms.

Higher bandwidths could be achieved using a shorter device or a device with a wider depletion region. Simulations based on extrapolating the measured performance of a three quantum well EAM with a 6.4 tm ridge width (shown in Figure 3) predict that 10 dB of modulation and approximately 10 GHz bandwidth may be achievable in a 150 pm long reflective EAM with two quantum wells. This is significant as this design could find wide application as an arrayed 10 Gbit/s modulator. It may be possible to further extend the bandwidth via travelling wave electrode approaches.

A low cost expanded mode photodiode can have very similar structure to that described above.

In summary, an electroabsorption modulator comprises a depletion region 7 between at least one layer of p-doped semiconductor 6 and at least one layer of n-doped semiconductor 8. The layers form a ridge waveguide structure. The thickness of the absorption layer is between 9 and 60 nm and the width of the ridge is between 4.5 and 12 microns.

The design allows EAMs to be passively aligned with passive optical waveguides as part of a hybrid integration scheme for subsystem miniaturisation (G. Maxwell et al, "Very low coupling loss, hybrid-integrated all-optical regenerator with passive assembly" European Conference On Optical Communications, Post Deadline Paper, 2002).

Application areas include digital modulation for telecommunications and data-communications and fibre-fed antenna remoting.

Claims

Claims 1. A buried heterostructure electroabsorption modulator comprising an absorption layer between at least one layer of p-doped semiconductor and at least one layer of n-doped semiconductor, wherein the absorption layer is formed in a mesa with a width of between 0.6 and 3 microns and the thickness of the absorption layer is between 9 and 65 nm.
2. An electroabsorption modulator as claimed in claim 8, wherein the absorption layer comprises multiple quantum wells.
3. An electroabsorption modulator as claimed in claim 9, wherein the absorption layer comprises three or fewer quantum wells.
4. An electroabsorption modulator as claimed in claim 9 or 10, wherein the sum of the thicknesses of the multiple quantum wells is between 20 and 40 nm.
5. An electroabsorption modulator as claimed in any of claims 8 to 11, wherein the absorption layer has a thickness between 20 and 40 nm.
6. An electroabsorption modulator as claimed in any of claims 8 to 12, wherein the width of the mesa is between 1 and 2 microns.Amendments to the claims have been filed as follows Claims 1. A buried heterostructure electroabsorption modulator comprising an absorption layer between at least one layer of p-doped semiconductor and at least one layer of n-doped semiconductor, wherein the absorption layer is formed in a mesa with a width of between 0.6 and 3 microns and the thickness of the absorption layer is between 9 and 65 nm.2. An electroabsorption modulator as claimed in claim 1, wherein the absorption layer comprises multiple quantum wells.3. An electroabsorption modulator as claimed in claim 2, wherein the absorption layer comprises three or fewer quantum wells. a)Q 15 4. An electroabsorption modulator as claimed in claim 2 or 3, wherein the sum of the thicknesses of the multiple quantum wells is between 20 and 40 nm.0) 5. An electroabsorption modulator as claimed in any of the preceding claims, Q wherein the absorption layer has a thickness between 20 and 40 nm.6. An electroabsorption modulator as claimed in any of the preceding claims, wherein the width of the mesa is between 1 and 2 microns.