GB2256297A - Semi-conductor memory device - Google Patents
Semi-conductor memory device Download PDFInfo
- Publication number
- GB2256297A GB2256297A GB9121767A GB9121767A GB2256297A GB 2256297 A GB2256297 A GB 2256297A GB 9121767 A GB9121767 A GB 9121767A GB 9121767 A GB9121767 A GB 9121767A GB 2256297 A GB2256297 A GB 2256297A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- bit lines
- semiconductor device
- memory cells
- precharging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910008735A KR920022301A (ko) | 1991-05-28 | 1991-05-28 | 반도체 기억장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9121767D0 GB9121767D0 (en) | 1991-11-27 |
GB2256297A true GB2256297A (en) | 1992-12-02 |
Family
ID=19315060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9121767A Withdrawn GB2256297A (en) | 1991-05-28 | 1991-10-14 | Semi-conductor memory device |
Country Status (7)
Country | Link |
---|---|
KR (1) | KR920022301A (zh) |
CN (1) | CN1067325A (zh) |
DE (1) | DE4135686A1 (zh) |
FR (1) | FR2677162A1 (zh) |
GB (1) | GB2256297A (zh) |
IT (1) | IT1251623B (zh) |
NL (1) | NL9101772A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0869507A2 (en) * | 1997-03-31 | 1998-10-07 | Seiko Epson Corporation | Low power memory including selective precharge circuit |
WO2002095761A2 (en) * | 2001-03-30 | 2002-11-28 | Intel Corporation (A Delawere Corporation) | Apparatus and method for memory storage cell leakage cancellation scheme |
WO2004049348A1 (de) * | 2002-11-26 | 2004-06-10 | Infineon Technologies Ag | Sram-speicherzelle und verfahren zum kompensieren eines in die sram-speicherzelle fliessenden leckstroms |
US6967875B2 (en) * | 2003-04-21 | 2005-11-22 | United Microelectronics Corp. | Static random access memory system with compensating-circuit for bitline leakage |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3544933B2 (ja) * | 2000-10-05 | 2004-07-21 | Necエレクトロニクス株式会社 | 半導体集積回路 |
KR100732390B1 (ko) * | 2001-12-29 | 2007-06-27 | 매그나칩 반도체 유한회사 | 전류 미러형 누설 전류 보상 회로 |
JP4251815B2 (ja) * | 2002-04-04 | 2009-04-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP3904499B2 (ja) * | 2002-09-25 | 2007-04-11 | 松下電器産業株式会社 | 半導体記憶装置 |
JP2004152092A (ja) * | 2002-10-31 | 2004-05-27 | Matsushita Electric Ind Co Ltd | 電圧源回路 |
CN106558329A (zh) * | 2015-09-30 | 2017-04-05 | 展讯通信(上海)有限公司 | 一种单端存储器的差分读取电路及方法 |
CN106875963B (zh) * | 2017-02-21 | 2019-05-14 | 中国科学院上海微***与信息技术研究所 | 一种三维存储器读出电路及读出方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081347A2 (en) * | 1981-12-07 | 1983-06-15 | Hughes Aircraft Company | Nonvolatile random access memory cell |
US4740926A (en) * | 1985-04-05 | 1988-04-26 | Fujitsu Limited | Semiconductor memory device |
US4774692A (en) * | 1986-11-20 | 1988-09-27 | Ricoh Company, Ltd. | Sense circuit of a semiconductor memory device |
US4856106A (en) * | 1987-08-19 | 1989-08-08 | Mitsubishi Denki Kabushiki Kaisha | Synchronous static random access memory having precharge system and operating method thereof |
EP0409394A2 (en) * | 1989-07-17 | 1991-01-23 | Advanced Micro Devices, Inc. | Biasing circuit |
US4996447A (en) * | 1987-12-18 | 1991-02-26 | Oki Electric Industry Co., Ltd. | Field-effect transistor load circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0073726B1 (en) * | 1981-09-01 | 1987-11-25 | Fujitsu Limited | Semi-conductor memory circuit |
US4494221A (en) * | 1982-03-03 | 1985-01-15 | Inmos Corporation | Bit line precharging and equilibrating circuit |
JPS63166090A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | スタティック型メモリ |
-
1991
- 1991-05-28 KR KR1019910008735A patent/KR920022301A/ko not_active Application Discontinuation
- 1991-10-14 GB GB9121767A patent/GB2256297A/en not_active Withdrawn
- 1991-10-23 IT ITMI912808A patent/IT1251623B/it active IP Right Grant
- 1991-10-23 NL NL9101772A patent/NL9101772A/nl not_active Application Discontinuation
- 1991-10-25 DE DE4135686A patent/DE4135686A1/de not_active Withdrawn
- 1991-10-25 FR FR9113207A patent/FR2677162A1/fr active Pending
-
1992
- 1992-01-10 CN CN92100194A patent/CN1067325A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081347A2 (en) * | 1981-12-07 | 1983-06-15 | Hughes Aircraft Company | Nonvolatile random access memory cell |
US4740926A (en) * | 1985-04-05 | 1988-04-26 | Fujitsu Limited | Semiconductor memory device |
US4774692A (en) * | 1986-11-20 | 1988-09-27 | Ricoh Company, Ltd. | Sense circuit of a semiconductor memory device |
US4856106A (en) * | 1987-08-19 | 1989-08-08 | Mitsubishi Denki Kabushiki Kaisha | Synchronous static random access memory having precharge system and operating method thereof |
US4996447A (en) * | 1987-12-18 | 1991-02-26 | Oki Electric Industry Co., Ltd. | Field-effect transistor load circuit |
EP0409394A2 (en) * | 1989-07-17 | 1991-01-23 | Advanced Micro Devices, Inc. | Biasing circuit |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0869507A2 (en) * | 1997-03-31 | 1998-10-07 | Seiko Epson Corporation | Low power memory including selective precharge circuit |
EP0869507A3 (en) * | 1997-03-31 | 1999-12-08 | Seiko Epson Corporation | Low power memory including selective precharge circuit |
WO2002095761A2 (en) * | 2001-03-30 | 2002-11-28 | Intel Corporation (A Delawere Corporation) | Apparatus and method for memory storage cell leakage cancellation scheme |
WO2002095761A3 (en) * | 2001-03-30 | 2003-10-30 | Intel Corp A Delawere Corp | Apparatus and method for memory storage cell leakage cancellation scheme |
US6801465B2 (en) | 2001-03-30 | 2004-10-05 | Intel Corporation | Apparatus and method for a memory storage cell leakage cancellation scheme |
WO2004049348A1 (de) * | 2002-11-26 | 2004-06-10 | Infineon Technologies Ag | Sram-speicherzelle und verfahren zum kompensieren eines in die sram-speicherzelle fliessenden leckstroms |
US7504695B2 (en) | 2002-11-26 | 2009-03-17 | Infineon Technologies Ag | SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell |
US6967875B2 (en) * | 2003-04-21 | 2005-11-22 | United Microelectronics Corp. | Static random access memory system with compensating-circuit for bitline leakage |
Also Published As
Publication number | Publication date |
---|---|
FR2677162A1 (fr) | 1992-12-04 |
DE4135686A1 (de) | 1992-12-03 |
KR920022301A (ko) | 1992-12-19 |
ITMI912808A0 (it) | 1991-10-23 |
CN1067325A (zh) | 1992-12-23 |
GB9121767D0 (en) | 1991-11-27 |
ITMI912808A1 (it) | 1993-04-23 |
NL9101772A (nl) | 1992-12-16 |
IT1251623B (it) | 1995-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |