GB2256297A - Semi-conductor memory device - Google Patents

Semi-conductor memory device Download PDF

Info

Publication number
GB2256297A
GB2256297A GB9121767A GB9121767A GB2256297A GB 2256297 A GB2256297 A GB 2256297A GB 9121767 A GB9121767 A GB 9121767A GB 9121767 A GB9121767 A GB 9121767A GB 2256297 A GB2256297 A GB 2256297A
Authority
GB
United Kingdom
Prior art keywords
transistors
bit lines
semiconductor device
memory cells
precharging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9121767A
Other languages
English (en)
Other versions
GB9121767D0 (en
Inventor
Changrae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9121767D0 publication Critical patent/GB9121767D0/en
Publication of GB2256297A publication Critical patent/GB2256297A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
GB9121767A 1991-05-28 1991-10-14 Semi-conductor memory device Withdrawn GB2256297A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008735A KR920022301A (ko) 1991-05-28 1991-05-28 반도체 기억장치

Publications (2)

Publication Number Publication Date
GB9121767D0 GB9121767D0 (en) 1991-11-27
GB2256297A true GB2256297A (en) 1992-12-02

Family

ID=19315060

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9121767A Withdrawn GB2256297A (en) 1991-05-28 1991-10-14 Semi-conductor memory device

Country Status (7)

Country Link
KR (1) KR920022301A (zh)
CN (1) CN1067325A (zh)
DE (1) DE4135686A1 (zh)
FR (1) FR2677162A1 (zh)
GB (1) GB2256297A (zh)
IT (1) IT1251623B (zh)
NL (1) NL9101772A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869507A2 (en) * 1997-03-31 1998-10-07 Seiko Epson Corporation Low power memory including selective precharge circuit
WO2002095761A2 (en) * 2001-03-30 2002-11-28 Intel Corporation (A Delawere Corporation) Apparatus and method for memory storage cell leakage cancellation scheme
WO2004049348A1 (de) * 2002-11-26 2004-06-10 Infineon Technologies Ag Sram-speicherzelle und verfahren zum kompensieren eines in die sram-speicherzelle fliessenden leckstroms
US6967875B2 (en) * 2003-04-21 2005-11-22 United Microelectronics Corp. Static random access memory system with compensating-circuit for bitline leakage

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3544933B2 (ja) * 2000-10-05 2004-07-21 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
KR100732390B1 (ko) * 2001-12-29 2007-06-27 매그나칩 반도체 유한회사 전류 미러형 누설 전류 보상 회로
JP4251815B2 (ja) * 2002-04-04 2009-04-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3904499B2 (ja) * 2002-09-25 2007-04-11 松下電器産業株式会社 半導体記憶装置
JP2004152092A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Ind Co Ltd 電圧源回路
CN106558329A (zh) * 2015-09-30 2017-04-05 展讯通信（上海）有限公司 一种单端存储器的差分读取电路及方法
CN106875963B (zh) * 2017-02-21 2019-05-14 中国科学院上海微***与信息技术研究所 一种三维存储器读出电路及读出方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081347A2 (en) * 1981-12-07 1983-06-15 Hughes Aircraft Company Nonvolatile random access memory cell
US4740926A (en) * 1985-04-05 1988-04-26 Fujitsu Limited Semiconductor memory device
US4774692A (en) * 1986-11-20 1988-09-27 Ricoh Company, Ltd. Sense circuit of a semiconductor memory device
US4856106A (en) * 1987-08-19 1989-08-08 Mitsubishi Denki Kabushiki Kaisha Synchronous static random access memory having precharge system and operating method thereof
EP0409394A2 (en) * 1989-07-17 1991-01-23 Advanced Micro Devices, Inc. Biasing circuit
US4996447A (en) * 1987-12-18 1991-02-26 Oki Electric Industry Co., Ltd. Field-effect transistor load circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073726B1 (en) * 1981-09-01 1987-11-25 Fujitsu Limited Semi-conductor memory circuit
US4494221A (en) * 1982-03-03 1985-01-15 Inmos Corporation Bit line precharging and equilibrating circuit
JPS63166090A (ja) * 1986-12-26 1988-07-09 Toshiba Corp スタティック型メモリ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081347A2 (en) * 1981-12-07 1983-06-15 Hughes Aircraft Company Nonvolatile random access memory cell
US4740926A (en) * 1985-04-05 1988-04-26 Fujitsu Limited Semiconductor memory device
US4774692A (en) * 1986-11-20 1988-09-27 Ricoh Company, Ltd. Sense circuit of a semiconductor memory device
US4856106A (en) * 1987-08-19 1989-08-08 Mitsubishi Denki Kabushiki Kaisha Synchronous static random access memory having precharge system and operating method thereof
US4996447A (en) * 1987-12-18 1991-02-26 Oki Electric Industry Co., Ltd. Field-effect transistor load circuit
EP0409394A2 (en) * 1989-07-17 1991-01-23 Advanced Micro Devices, Inc. Biasing circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869507A2 (en) * 1997-03-31 1998-10-07 Seiko Epson Corporation Low power memory including selective precharge circuit
EP0869507A3 (en) * 1997-03-31 1999-12-08 Seiko Epson Corporation Low power memory including selective precharge circuit
WO2002095761A2 (en) * 2001-03-30 2002-11-28 Intel Corporation (A Delawere Corporation) Apparatus and method for memory storage cell leakage cancellation scheme
WO2002095761A3 (en) * 2001-03-30 2003-10-30 Intel Corp A Delawere Corp Apparatus and method for memory storage cell leakage cancellation scheme
US6801465B2 (en) 2001-03-30 2004-10-05 Intel Corporation Apparatus and method for a memory storage cell leakage cancellation scheme
WO2004049348A1 (de) * 2002-11-26 2004-06-10 Infineon Technologies Ag Sram-speicherzelle und verfahren zum kompensieren eines in die sram-speicherzelle fliessenden leckstroms
US7504695B2 (en) 2002-11-26 2009-03-17 Infineon Technologies Ag SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell
US6967875B2 (en) * 2003-04-21 2005-11-22 United Microelectronics Corp. Static random access memory system with compensating-circuit for bitline leakage

Also Published As

Publication number Publication date
FR2677162A1 (fr) 1992-12-04
DE4135686A1 (de) 1992-12-03
KR920022301A (ko) 1992-12-19
ITMI912808A0 (it) 1991-10-23
CN1067325A (zh) 1992-12-23
GB9121767D0 (en) 1991-11-27
ITMI912808A1 (it) 1993-04-23
NL9101772A (nl) 1992-12-16
IT1251623B (it) 1995-05-17

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)