FR3118291B1 - Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial - Google Patents
Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial Download PDFInfo
- Publication number
- FR3118291B1 FR3118291B1 FR2013514A FR2013514A FR3118291B1 FR 3118291 B1 FR3118291 B1 FR 3118291B1 FR 2013514 A FR2013514 A FR 2013514A FR 2013514 A FR2013514 A FR 2013514A FR 3118291 B1 FR3118291 B1 FR 3118291B1
- Authority
- FR
- France
- Prior art keywords
- optoelectronic device
- axial
- type
- emitting diode
- dimensional light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 230000005670 electromagnetic radiation Effects 0.000 abstract 2
- 238000000295 emission spectrum Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004038 photonic crystal Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Lasers (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Abstract
Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial La présente description concerne un dispositif optoélectronique (10) comprenant une matrice (15) de diodes électroluminescentes axiales (LED), les diodes électroluminescentes comprenant chacune une zone active (20) configurée pour émettre un rayonnement électromagnétique dont le spectre d'émission comprend un maximum à une première longueur d'onde, la matrice formant un cristal photonique configuré pour former un pic de résonance amplifiant l'intensité dudit rayonnement électromagnétique à au moins une deuxième longueur d'onde différente de la première longueur d'onde. Figure pour l'abrégé : Fig. 1
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2013514A FR3118291B1 (fr) | 2020-12-17 | 2020-12-17 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
KR1020237021259A KR20230119657A (ko) | 2020-12-17 | 2021-12-02 | 축형 3차원 다이오드를 이용한 광전자 소자 |
JP2023537133A JP2023554093A (ja) | 2020-12-17 | 2021-12-02 | アキシャル型3次元ダイオードを有する光電子デバイス |
EP21823876.4A EP4264682A1 (fr) | 2020-12-17 | 2021-12-02 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
PCT/EP2021/083863 WO2022128485A1 (fr) | 2020-12-17 | 2021-12-02 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
US18/267,074 US20240063191A1 (en) | 2020-12-17 | 2021-12-02 | Optoelectronic device with axial-type three-dimensional light-emitting diodes |
CN202180085768.1A CN116783718A (zh) | 2020-12-17 | 2021-12-02 | 具有轴向型三维二极管的光电子器件 |
TW110146677A TW202243278A (zh) | 2020-12-17 | 2021-12-14 | 具有軸向型三維二極體的光電裝置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2013514 | 2020-12-17 | ||
FR2013514A FR3118291B1 (fr) | 2020-12-17 | 2020-12-17 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3118291A1 FR3118291A1 (fr) | 2022-06-24 |
FR3118291B1 true FR3118291B1 (fr) | 2023-04-14 |
Family
ID=75746750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2013514A Active FR3118291B1 (fr) | 2020-12-17 | 2020-12-17 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
Country Status (8)
Country | Link |
---|---|
US (1) | US20240063191A1 (fr) |
EP (1) | EP4264682A1 (fr) |
JP (1) | JP2023554093A (fr) |
KR (1) | KR20230119657A (fr) |
CN (1) | CN116783718A (fr) |
FR (1) | FR3118291B1 (fr) |
TW (1) | TW202243278A (fr) |
WO (1) | WO2022128485A1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2995729B1 (fr) | 2012-09-18 | 2016-01-01 | Aledia | Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication |
FR2997558B1 (fr) | 2012-10-26 | 2015-12-18 | Aledia | Dispositif opto-electrique et son procede de fabrication |
JP2017157724A (ja) * | 2016-03-02 | 2017-09-07 | デクセリアルズ株式会社 | 表示装置及びその製造方法、並びに発光装置及びその製造方法 |
FR3083002B1 (fr) * | 2018-06-20 | 2020-07-31 | Aledia | Dispositif optoelectronique comprenant une matrice de diodes |
-
2020
- 2020-12-17 FR FR2013514A patent/FR3118291B1/fr active Active
-
2021
- 2021-12-02 US US18/267,074 patent/US20240063191A1/en active Pending
- 2021-12-02 WO PCT/EP2021/083863 patent/WO2022128485A1/fr active Application Filing
- 2021-12-02 EP EP21823876.4A patent/EP4264682A1/fr active Pending
- 2021-12-02 CN CN202180085768.1A patent/CN116783718A/zh active Pending
- 2021-12-02 JP JP2023537133A patent/JP2023554093A/ja active Pending
- 2021-12-02 KR KR1020237021259A patent/KR20230119657A/ko unknown
- 2021-12-14 TW TW110146677A patent/TW202243278A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20230119657A (ko) | 2023-08-16 |
WO2022128485A1 (fr) | 2022-06-23 |
EP4264682A1 (fr) | 2023-10-25 |
US20240063191A1 (en) | 2024-02-22 |
CN116783718A (zh) | 2023-09-19 |
FR3118291A1 (fr) | 2022-06-24 |
TW202243278A (zh) | 2022-11-01 |
JP2023554093A (ja) | 2023-12-26 |
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