FR3114190B1 - Pixel à efficacité quantique améliorée - Google Patents

Pixel à efficacité quantique améliorée Download PDF

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Publication number
FR3114190B1
FR3114190B1 FR2010469A FR2010469A FR3114190B1 FR 3114190 B1 FR3114190 B1 FR 3114190B1 FR 2010469 A FR2010469 A FR 2010469A FR 2010469 A FR2010469 A FR 2010469A FR 3114190 B1 FR3114190 B1 FR 3114190B1
Authority
FR
France
Prior art keywords
quantum efficiency
substrate
face
pixel
enhanced pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2010469A
Other languages
English (en)
Other versions
FR3114190A1 (fr
Inventor
Raul Andres Bianchi
Marios Barlas
Alexandre Lopez
Bastien Mamdy
Bruce Rae
Isobel Nicholson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Research and Development Ltd
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Research and Development Ltd filed Critical STMicroelectronics Crolles 2 SAS
Priority to US17/471,049 priority Critical patent/US12051705B2/en
Publication of FR3114190A1 publication Critical patent/FR3114190A1/fr
Application granted granted Critical
Publication of FR3114190B1 publication Critical patent/FR3114190B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Pixel à efficacité quantique améliorée La présente description concerne un pixel (1) comprenant : une photodiode (PD) comprenant une partie (100) d’un substrat (102) en un matériau semi-conducteur, s’étendant verticalement à partir d’une première face (104) du substrat (102) jusqu’à une deuxième face (106) du substrat (102) configurée pour recevoir de la lumière ; une couche (108) en un premier matériau recouvrant chacune des surfaces latérales de ladite partie (100) ; une couche (110) en un deuxième matériau recouvrant ladite partie (100) du côté de la première face (104), les premier et deuxième matériaux ayant des indices de réfraction inférieurs à celui du matériau semiconducteur ; et une structure de diffraction (125) disposée sur une face de la photodiode (PD) du côté de la deuxième face (106). Figure pour l'abrégé : Fig. 1
FR2010469A 2020-09-11 2020-10-13 Pixel à efficacité quantique améliorée Active FR3114190B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/471,049 US12051705B2 (en) 2020-09-11 2021-09-09 Pixel with an improved quantum efficiency

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GR20200100550 2020-09-11
GR20200100550 2020-09-11

Publications (2)

Publication Number Publication Date
FR3114190A1 FR3114190A1 (fr) 2022-03-18
FR3114190B1 true FR3114190B1 (fr) 2022-10-14

Family

ID=73793453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2010469A Active FR3114190B1 (fr) 2020-09-11 2020-10-13 Pixel à efficacité quantique améliorée

Country Status (1)

Country Link
FR (1) FR3114190B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018079296A1 (ja) * 2016-10-27 2019-09-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
DE102018107914B4 (de) * 2017-08-30 2023-03-16 Taiwan Semiconductor Manufacturing Co. Ltd. Erhöhter optischer Pfad für Licht mit langer Wellenlänge durch eine Gitterstruktur
US11296137B2 (en) * 2018-10-30 2022-04-05 Sense Photonics, Inc. High quantum efficiency Geiger-mode avalanche diodes including high sensitivity photon mixing structures and arrays thereof
CN110729314A (zh) * 2018-07-17 2020-01-24 联华电子股份有限公司 光学感测装置
KR20200027123A (ko) * 2018-09-03 2020-03-12 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
FR3114190A1 (fr) 2022-03-18

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