FR3114190B1 - Pixel à efficacité quantique améliorée - Google Patents
Pixel à efficacité quantique améliorée Download PDFInfo
- Publication number
- FR3114190B1 FR3114190B1 FR2010469A FR2010469A FR3114190B1 FR 3114190 B1 FR3114190 B1 FR 3114190B1 FR 2010469 A FR2010469 A FR 2010469A FR 2010469 A FR2010469 A FR 2010469A FR 3114190 B1 FR3114190 B1 FR 3114190B1
- Authority
- FR
- France
- Prior art keywords
- quantum efficiency
- substrate
- face
- pixel
- enhanced pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Pixel à efficacité quantique améliorée La présente description concerne un pixel (1) comprenant : une photodiode (PD) comprenant une partie (100) d’un substrat (102) en un matériau semi-conducteur, s’étendant verticalement à partir d’une première face (104) du substrat (102) jusqu’à une deuxième face (106) du substrat (102) configurée pour recevoir de la lumière ; une couche (108) en un premier matériau recouvrant chacune des surfaces latérales de ladite partie (100) ; une couche (110) en un deuxième matériau recouvrant ladite partie (100) du côté de la première face (104), les premier et deuxième matériaux ayant des indices de réfraction inférieurs à celui du matériau semiconducteur ; et une structure de diffraction (125) disposée sur une face de la photodiode (PD) du côté de la deuxième face (106). Figure pour l'abrégé : Fig. 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/471,049 US12051705B2 (en) | 2020-09-11 | 2021-09-09 | Pixel with an improved quantum efficiency |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GR20200100550 | 2020-09-11 | ||
GR20200100550 | 2020-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3114190A1 FR3114190A1 (fr) | 2022-03-18 |
FR3114190B1 true FR3114190B1 (fr) | 2022-10-14 |
Family
ID=73793453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2010469A Active FR3114190B1 (fr) | 2020-09-11 | 2020-10-13 | Pixel à efficacité quantique améliorée |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR3114190B1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2018079296A1 (ja) * | 2016-10-27 | 2019-09-12 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
DE102018107914B4 (de) * | 2017-08-30 | 2023-03-16 | Taiwan Semiconductor Manufacturing Co. Ltd. | Erhöhter optischer Pfad für Licht mit langer Wellenlänge durch eine Gitterstruktur |
US11296137B2 (en) * | 2018-10-30 | 2022-04-05 | Sense Photonics, Inc. | High quantum efficiency Geiger-mode avalanche diodes including high sensitivity photon mixing structures and arrays thereof |
CN110729314A (zh) * | 2018-07-17 | 2020-01-24 | 联华电子股份有限公司 | 光学感测装置 |
KR20200027123A (ko) * | 2018-09-03 | 2020-03-12 | 삼성전자주식회사 | 이미지 센서 |
-
2020
- 2020-10-13 FR FR2010469A patent/FR3114190B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR3114190A1 (fr) | 2022-03-18 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20220318 |
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PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |