FR3035285B1 - Circuit d'amplification de puissance de signaux radiofrequence - Google Patents

Circuit d'amplification de puissance de signaux radiofrequence

Info

Publication number
FR3035285B1
FR3035285B1 FR1553236A FR1553236A FR3035285B1 FR 3035285 B1 FR3035285 B1 FR 3035285B1 FR 1553236 A FR1553236 A FR 1553236A FR 1553236 A FR1553236 A FR 1553236A FR 3035285 B1 FR3035285 B1 FR 3035285B1
Authority
FR
France
Prior art keywords
node
circuit
radio frequency
frequency signal
signal power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1553236A
Other languages
English (en)
Other versions
FR3035285A1 (fr
Inventor
Michel Ayraud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics Grenoble 2 SAS
Priority to FR1553236A priority Critical patent/FR3035285B1/fr
Priority to CN201510850195.3A priority patent/CN106059506B/zh
Priority to CN201520967107.3U priority patent/CN205545160U/zh
Priority to US14/956,826 priority patent/US9496827B2/en
Publication of FR3035285A1 publication Critical patent/FR3035285A1/fr
Application granted granted Critical
Publication of FR3035285B1 publication Critical patent/FR3035285B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21103—An impedance adaptation circuit being added at the input of a power amplifier stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

L'invention concerne un amplificateur (300) de signaux radiofréquence, comportant : une branche comportant une inductance (L) en série avec un condensateur (CSW) entre des premier (VBAT) et deuxième (GND) noeuds d'alimentation, le point milieu entre l'inductance et le condensateur formant un noeud de sortie (OUT) ; une branche comportant un transistor MOS (302) en série avec un commutateur (SW) entre le noeud de sortie et le deuxième noeud d'alimentation, le commutateur (SW) ayant un noeud de commande relié à un premier noeud (IN1) d'application d'un signal d'entrée (s1), et le transistor MOS (302) ayant sa grille reliée à un deuxième noeud (IN2) d'application d'un signal d'entrée (s2) ; et un circuit (701) de fourniture d'un signal binaire (S (A)) représentatif du signe de la différence (A) entre la tension drain-source (VDS) du transistor (302) et la tension grille-source (VGS) moins la tension de seuil (Vt) du transistor (302).
FR1553236A 2015-04-14 2015-04-14 Circuit d'amplification de puissance de signaux radiofrequence Expired - Fee Related FR3035285B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1553236A FR3035285B1 (fr) 2015-04-14 2015-04-14 Circuit d'amplification de puissance de signaux radiofrequence
CN201510850195.3A CN106059506B (zh) 2015-04-14 2015-11-27 射频信号功率放大电路
CN201520967107.3U CN205545160U (zh) 2015-04-14 2015-11-27 射频信号功率放大器和射频信号传输装置
US14/956,826 US9496827B2 (en) 2015-04-14 2015-12-02 Radio frequency signal power amplification circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1553236A FR3035285B1 (fr) 2015-04-14 2015-04-14 Circuit d'amplification de puissance de signaux radiofrequence

Publications (2)

Publication Number Publication Date
FR3035285A1 FR3035285A1 (fr) 2016-10-21
FR3035285B1 true FR3035285B1 (fr) 2017-05-12

Family

ID=54065977

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1553236A Expired - Fee Related FR3035285B1 (fr) 2015-04-14 2015-04-14 Circuit d'amplification de puissance de signaux radiofrequence

Country Status (3)

Country Link
US (1) US9496827B2 (fr)
CN (2) CN106059506B (fr)
FR (1) FR3035285B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3065290A1 (fr) * 2017-04-14 2018-10-19 STMicroelectronics (Alps) SAS Amplificateur de detection de courant a faible decalage
CN107658605A (zh) * 2017-10-18 2018-02-02 江苏永沃铜业有限公司 一种免焊接高性能射频连接器
CN110048681B (zh) * 2019-04-28 2024-05-10 东南大学 一种电流注入式e类功率放大器
CN111293996A (zh) * 2020-03-05 2020-06-16 芯朴科技(上海)有限公司 平衡放大器和射频信号的功率放大方法
KR20230025084A (ko) * 2021-08-13 2023-02-21 삼성전자주식회사 전압 분배 커패시터 회로 및 이를 포함하는 전원 변조기
CN115014506B (zh) * 2022-08-08 2022-11-04 山西中辐核仪器有限责任公司 一种振动检测电路及便携式仪器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2301247A (en) 1995-05-22 1996-11-27 Univ Bristol A cartesian loop transmitter amplifier
DE10056472A1 (de) 2000-11-15 2002-05-29 Infineon Technologies Ag Polar-Loop-Sendeschaltung
US6472934B1 (en) * 2000-12-29 2002-10-29 Ericsson Inc. Triple class E Doherty amplifier topology for high efficiency signal transmitters
JP2005501459A (ja) * 2001-08-23 2005-01-13 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 高周波電力増幅回路
US6737973B2 (en) * 2001-10-15 2004-05-18 3M Innovative Properties Company Amplifier modulation
US20060132111A1 (en) * 2004-08-02 2006-06-22 Jacobs James K Power supply with multiple modes of operation
US7276976B2 (en) * 2004-12-02 2007-10-02 Electronics And Telecommunications Research Institute Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique
US8385854B2 (en) * 2009-05-21 2013-02-26 Qualcomm Incorporated Adaptive parametric power amplifier protection circuit
US8374557B2 (en) * 2009-07-06 2013-02-12 Rfaxis, Inc. Radio frequency front end circuit with antenna diversity for multipath mitigation
US8772975B2 (en) * 2009-12-07 2014-07-08 Qualcomm Incorporated Apparatus and method for implementing a differential drive amplifier and a coil arrangement
FR3010263B1 (fr) * 2013-09-04 2017-12-08 Commissariat Energie Atomique Procede d'adaptation automatique d'impedance et chaine d'emission correspondante
US9419560B2 (en) * 2014-05-23 2016-08-16 Qualcomm Incorporated Low power multi-stacked power amplifier

Also Published As

Publication number Publication date
US20160308493A1 (en) 2016-10-20
FR3035285A1 (fr) 2016-10-21
US9496827B2 (en) 2016-11-15
CN106059506B (zh) 2019-05-31
CN205545160U (zh) 2016-08-31
CN106059506A (zh) 2016-10-26

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